Practical experimental results on diodes and thyristors showed that the amplitude of the injected current required is proportional to the peak reverse recovery current and proved that these devices experience a momentary increase in recombination of current carriers during the injection of the additional current. This help to prevent the device from conducting large negative current, which in turn reduce its reverse recovery charge and reverse recovery time. Results obtained from experiments with insulated gate bipolar transistors showed a significant reduction in the time where current falls to zero when opposing current was injected into the device during its turn-off transient. Further simulation results from numerical modeling showed that the injected opposing current temporary increase recombination in the device and therefore reduce the extracted excess carriers that stored within the device.
