ution employed to solve the implicit diode equation utilizes
%       the Lambert W function to obtain an explicit function of V=f(i) and
%       I=f(V) as shown in [2].
%
%% Example
% Example parameters for a typical 210 W c-Si module

IL = 5.658; %photocurrent (A)
I0 = 4.629E-11; %dark current (A)
Rsh = 269.68; %shunt resistance (ohms)
Rs = .386; %series resistance (ohms)
n = 1.0134; % ideality factor (diode factor)
Ns = 72; %number of cells in series
k = 1.3806488E-23; %Boltzman's constant in