  Spin-Transfer Torque Magnetic RAM (STT-MRAM) is known as the most promising
replacement for SRAM technology in large Last-Level Caches (LLCs). Despite its
high-density, non-volatility, near-zero leakage power, and immunity to
radiation as the major advantages, STT-MRAM-based cache suffers from high error
rates mainly due to retention failure, read disturbance, and write failure.
Existing studies are limited to estimating the rate of only one or two of these
error types for STT-MRAM cache. However, the overall vulnerability of STT-MRAM
caches, which its estimation is a must to design cost-efficient reliable
caches, has not been offered in any of previous studies. In this paper, we
propose a system-level framework for reliability exploration and
characterization of errors behavior in STT-MRAM caches. To this end, we
formulate the cache vulnerability considering the inter-correlation of the
error types including all three errors as well as the dependency of error rates
to workloads behavior and Process Variations (PVs). Our analysis reveals that
STT-MRAM cache vulnerability is highly workload-dependent and varies by orders
of magnitude in different cache access patterns. Our analytical study also
shows that this vulnerability divergence significantly increases by process
variations in STT-MRAM cells. To evaluate the framework, we implement the error
types in the gem5 full-system simulator, and the experimental results show that
the total error rate in a shared LLC varies by 32.0x for different workloads. A
further 6.5x vulnerability variation is observed when considering PVs in the
STT-MRAM cells. In addition, the contribution of each error type in total LLC
vulnerability highly varies in different cache access patterns and moreover,
error rates are differently affected by PVs.
