  We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth
parameters with their properties when they are grown on nominally
(001)-oriented Si substrates, as desired for the lattice-matched integration of
optoelectronic devices with the standard Si technology. The growth mode as well
as the chemical, morphological and structural properties of samples prepared
using different growth temperatures and N precursor fluxes were analyzed by
RHEED, XRD, RBS, NRA, EDX spectroscopy, AFM and TEM. Our results show that, up
to x = 0.04, it is possible to synthesize smooth and chemically homogeneous
GaP1-xNx layers with a high-structural quality in a 2D fashion, namely,
layer-by-layer. For a given N mole fraction, the layer-by-layer growth mode is
favored by lowering the growth temperature while decreasing the N precursor
flux. As the flux of the N precursor is increased at a given temperature to
enhance N incorporation, the quality of the layers degrades upon exceeding a
temperature-dependent threshold; above this threshold, the growing layer
experiences a growth mode transition from 2D to 3D after reaching a critical
thickness of a few nm. Following that transition, the morphology and the
chemical composition become modulated along the [110] direction with a period
of several tens of nm. The surface morphology is then characterized by the
formation of {113}-faceted wires, while the N concentration is enhanced at the
troughs formed in between adjacent (113) and (-1-13) facets. We conclude on the
feasibility of fabricating homogeneous thick GaP1-xNx layers lattice matched to
Si (x = 0.021) or even with N content up to x=0.04. The possibility of
exceeding a N mole fraction of 0.04 without inducing coupled
morphological-compositional modulations has also been demonstrated when the
layer thickness is kept below the critical value for the 2D-3D growth mode
transition.
