  Solid-state elastic-wave phonons are a promising platform for a wide range of
quantum information applications. An outstanding challenge and enabling
capability in harnessing phonons for quantum information processing is
achieving strong nonlinear interactions between them. To this end, we propose a
general architecture using piezoelectric-semiconductor heterostructures
consisting of a piezoelectric acoustic material hosting phonon modes in direct
proximity to a two-dimensional electron gas (2DEG). Each phonon in the
piezoelectric material carries an electric field, which extends into the 2DEG.
The fields induce polarization of 2DEG electrons, which in turn interact with
other piezoelectric phononic electric fields. The net result is coupling
between the various phonon modes. We derive, from first principles, the
nonlinear phononic susceptibility of the system. We show that many nonlinear
processes are strongly favored at high electron mobility, motivating the use of
the 2DEG to mediate the nonlinearities. We derive in detail the first, second,
and third-order susceptibilities and calculate them for the case of a lithium
niobate surface acoustic wave interacting with a GaAs-AlGaAs heterostructure
2DEG. We show that, for this system, the strong third-order nonlinearity could
enable single-phonon Kerr shift in an acoustic cavity that exceeds realistic
cavity linewidths, potentially leading to a new class of acoustic qubit. We
further show that the strong second-order nonlinearity could be used to produce
a high-gain, traveling-wave parametric amplifier to amplify--and ultimately
detect--the outputs of the acoustic cavity qubits. Assuming favorable losses in
such a system, these capabilities, combined with the ability to efficiently
transduce phonons from microwave electromagnetic fields in transmission lines,
thus hold promise for creating all-acoustic quantum information processors.
