  Si$_{y}$Ge$_{1-x-y}$(C,Sn,Pb)$_{x}$ alloys have attracted significant
attention as a route to achieve a direct-gap group-IV semiconductor. Using
density functional theory (DFT) - employing local density approximation and
hybrid Heyd-Scuzeria-Ernzerhof exchange-correlation functionals - we compute
the lattice parameters, relaxed and inner elastic constants, and internal
strain (Kleinman) parameters for elemental (diamond) group-IV materials and
zinc blende IV-IV compounds. Our DFT calculations support a little-known
experimental re-evaluation of the $\alpha$-Sn elastic constants, and contradict
a recent prediction of dynamic instability in selected IV-IV compounds.
DFT-calculated structural and elastic properties are used in conjunction with a
recently derived analytical parametrisation of a harmonic valence force field
(VFF) [Phys. Rev. B 100, 094112 (2019)] to obtain a complete set of VFF
potentials for Si$_{y}$Ge$_{1-x-y}$(C,Sn,Pb)$_{x}$ and Si$_{x}$Ge$_{1-x}$
alloys. The analytical parametrisation exactly reproduces the relaxed elastic
constants and Kleinman parameter without recourse to numerical fitting,
allowing for accurate and computationally inexpensive lattice relaxation. The
accuracy of the VFF potentials is demonstrated via comparison to the results of
DFT supercell relaxation for (i) ordered Si (Ge) alloy supercells containing a
substitutional C, Ge (Si), Sn or Pb impurity, where comparison is also made to
a model analytical VFF, and (ii) disordered Si$_{x}$Ge$_{1-x}$ alloy
supercells. The VFF potentials we present enable accurate and computationally
inexpensive relaxation of large-scale supercells representing bulk-like
group-IV alloys or group-IV heterostructures, providing input to first
principles or empirical electronic structure calculations, and enabling
structural analysis and calculation of strain fields in heterostructures for
device applications.
