  Amorphous titanium dioxide TiO2 (a-TiO2) has been widely studied,
particularly as a protective coating layer on semiconductors to prevent
corrosion and promote electron-hole conduction in photoelectrochemical
reactions. The stability and longevity of a-TiO2 is strongly affected by the
thickness and structural heterogeneity, implying that understanding the
structure properties of a-TiO2 is crucial for improving the performance. This
study characterized the structural and electronic properties of a-TiO2 thin
films (~17nm) grown on Si by Atomic Layer Deposition (ALD). Fluctuation spectra
V(k) and angular correlation functions were determined with 4-dimensional
scanning transmission electron microscopy (4D-STEM), which revealed the
distinctive medium-range ordering in the a-TiO2 film. A realistic atomic model
of a-TiO2 was established guided by the medium-range ordering and the
previously reported short-range ordering of a-TiO2 film, as well as the
interatomic potential. The structure was optimized by the StructOpt code using
a genetic algorithm that simultaneously minimizes energy and maximizes match to
experimental short- and medium-range ordering. The StructOpt a-TiO2 model
presents an improved agreements with the medium-range ordering and the k-space
location of the dominant 2-fold angular correlations compared with a
traditional melt-quenched model. The electronic structure of the StructOpt
a-TiO2 model was studied by ab initio calculation and compared to the
crystalline phases and experimental results. This work uncovered the
medium-range ordering in a-TiO2 thin film and provided a realistic a-TiO2
structure model for further investigation of structure-property relationships
and materials design. In addition, the improved multi-objective optimization
package StructOpt was provided for structure determination of complex materials
guided by experiments and simulations.
