  This work describes the microstructure and transport properties of GeBiTe
films with emphasis on their out-of-equilibrium behavior.
Persistent-photoconductivity (PPC), previously studied in the phase-change
compound GeSbTe is also quite prominent in this system. Much weaker PPC
response is observed in the pure GeTe compound and when alloying GeTe with
either In or Mn. Films made from these compounds share the same
crystallographic structure, the same p-type conductivity, a similar
compositional disorder extending over mesoscopic scales, and similar mosaic
morphology. The enhanced PPC response exhibited by the Sb and Bi alloys may
therefore be related to their common chemistry. PPC is observable in GeBiTe
films at the entire range of sheet resistances studied in this work. The excess
conductance produced by a brief exposure to infrared illumination decays with
time as a stretched-exponential (Kohlrausch law). Intrinsic electron-glass
effects on the other hand, are observable in thin films of GeBiTe only for
samples that are strongly-localized just like it was noted with the seven
electron-glasses previously studied. These include a memory-dip which is the
defining attribute of the phenomenon. The memory-dip in GeBiTe is the widest
among the germanium-telluride alloys studied to date consistent with the high
carrier-concentration of this compound. The thermalization process exhibited in
either, the PPC-state or in the electron-glass regime is sluggish but the
temporal law of the relaxation from the out-of-equilibrium state is distinctly
different. Coexistence of the two phenomena give rise to some non-trivial
effects, in particular, the visibility of the memory-dip is enhanced in the
PPC-state. The relation between this effect and the dependence of the
memory-effect magnitude on the ratio between the interparticle-interaction and
quench-disorder is discussed.
