  The electrical and optical properties of semiconductor materials are
profoundly influenced by the atomic configurations and concentrations of
intrinsic defects. This influence is particularly significant in the case of
$\beta$-$\rm {Ga_2O_3}$, a vital ultrawide bandgap semiconductor characterized
by highly complex intrinsic defect configurations. Despite its importance,
there is a notable absence of an accurate method to recognize these defects in
large-scale atomistic computational modeling. In this work, we present an
effective algorithm designed explicitly for identifying various intrinsic point
defects in the $\beta$-$\rm {Ga_2O_3}$ lattice. By integrating particle swarm
optimization and hierarchical clustering methods, our algorithm attains a
recognition accuracy exceeding 95% for discrete point defect configurations.
Furthermore, we have developed an efficient technique for randomly generating
diverse intrinsic defects in large-scale $\beta$-$\rm {Ga_2O_3}$ systems. This
approach facilitates the construction of an extensive atomic database,
crucially instrumental in validating the recognition algorithm through a
substantial number of statistical analyses. Finally, the recognition algorithm
is applied to a molecular dynamics simulation, accurately describing the
evolution of the point defects during high-temperature annealing. Our work
provides a useful tool for investigating the complex dynamical evolution of
intrinsic point defects in $\beta$-$\rm {Ga_2O_3}$, and moreover, holds promise
for understanding similar material systems, such as $\rm {Al_2O_3}$, $\rm
{In_2O_3}$, and $\rm {Sb_2O_3}$.
