  Nonlinear behavior in the hopping transport of interacting charges enables
reconfigurable logic in disordered dopant network devices, where voltages
applied at control electrodes tune the relation between voltages applied at
input electrodes and the current measured at an output electrode. From kinetic
Monte Carlo simulations we analyze the critical nonlinear aspects of
variable-range hopping transport for realizing Boolean logic gates in these
devices on three levels. First, we quantify the occurrence of individual gates
for random choices of control voltages. We find that linearly inseparable gates
such as the XOR gate are less likely to occur than linearly separable gates
such as the AND gate, despite the fact that the number of different regions in
the multidimensional control voltage space for which AND or XOR gates occur is
comparable. Second, we use principal component analysis to characterize the
distribution of the output current vectors for the (00,10,01,11) logic input
combinations in terms of eigenvectors and eigenvalues of the output covariance
matrix. This allows a simple and direct comparison of the behavior of different
simulated devices and a comparison to experimental devices. Third, we quantify
the nonlinearity in the distribution of the output current vectors necessary
for realizing Boolean functionality by introducing three nonlinearity
indicators. The analysis provides a physical interpretation of the effects of
changing the hopping distance and temperature and is used in a comparison with
data generated by a deep neural network trained on a physical device.
