  While early magnetic memory designs relied on magnetization switching by
locally generated magnetic fields, key insights in condensed matter physics
later suggested the possibility to do it electrically. In the 1990s,
Slonczewzki and Berger formulated the concept of current-induced spin torques
in magnetic multilayers through which a spin-polarized current may switch the
magnetization of a ferromagnet. This discovery drove the development of
spin-transfer-torque magnetic random-access memories (STT-MRAMs). More recent
research unveiled spin-orbit-torques (SOTs) and will lead to a new generation
of devices including SOT-MRAMs. Parallel to these advances, multiferroics and
their magnetoelectric coupling experienced a renaissance, leading to novel
device concepts for information and communication technology such as the MESO
transistor. The story of the electrical control of magnetization is that of a
dance between fundamental research (in spintronics, condensed matter physics,
and materials science) and technology (MRAMs, MESO, microwave emitters,
spin-diodes, skyrmion-based devices, components for neuromorphics, etc). This
pas de deux led to major breakthroughs over the last decades (pure spin
currents, magnetic skyrmions, spin-charge interconversion, etc). As a result,
this field has propelled MRAMs into consumer electronics products but also
fueled discoveries in adjacent research areas such as ferroelectrics or
magnonics. Here, we cover recent advances in the control of magnetism by
electric fields and by current-induced torques. We first review fundamental
concepts in these two directions, then discuss their combination, and finally
present various families of devices harnessing the electrical control of
magnetic properties for various application fields. We conclude by giving
perspectives in terms of both emerging fundamental physics concepts and new
directions in materials science.
