  For more than a decade it was widely accepted that two-dimensional electrons
are insulating at zero temperature and at zero magnetic-field. Experimentally
it was demonstrated that, when placed in a strong perpendicular magnetic field,
the insulating phase turns into a quantum-Hall state. While this transition was
in accordance with existing theoretical models (KLZ), the density driven
metal-insulator transition at zero magnetic-field, recently observed in
high-quality two-dimensional systems, was unforeseen and, despite considerable
amount of effort, its origins are still unknown. In order to improve our
understanding of the zero magnetic-field transition, we conducted a study of
the insulator to quantum-Hall transition in low-density, two-dimensional, hole
system in GaAs that exhibits the zero magnetic-field metal-insulator
transition. We found that, in the low field insulating phase, upon increasing
the carrier density towards the metal-insulator transition, the critical
magnetic-field of the insulator to quantum-Hall transition decreases and
converges to the zero magnetic-field metal-insulator transition. This implies a
common origin for both the finite magnetic-field and the zero magnetic-field
transitions.
