  The limiting factor preventing kesterite (CZTSSe) thin film solar cell
performance further improvement is the large open-circuit voltage deficit
(Voc,def) issue, which is 0.345V for the current world record device with an
efficiency of 12.6%. In this work, SnCl4 and SnCl2_2H2O are respectively used
as tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO)
solution processed CZTSSe solar cells. Different complexations of tin compounds
with thiourea and DMSO lead to different reaction pathways from solution to
absorber material and thus dramatic difference in photovoltaic performance. The
coordination of Sn2+ with Tu leads to the formation of SnS and ZnS and Cu2S in
the precursor film, which converted to selenides first and then fused to
CZTSSe, resulting in poor film quality and device performance. The highest
efficiency obtained from this film is 8.84% with a Voc,def of 0.391V. The
coordination of Sn4+ with DMSO facilitates direct formation ofkesterite CZTS
phase in the precursor film which directed converted to CZTSSe during
selenization, resulting in compositional uniform absorber and high device
performance. A device with active area efficiency 12.2% and a Voc,def of 0.344
V was achieved from Sn4+ solution processed absorber. Furthermore, CZTSSe/CdS
heterojunction heat treatment (JHT) significantly improved Sn4+ device
performance but had slightly negative effect on Sn2+ device. A champion CZTSSe
solar cell with a total area efficiency of 12.4% (active are efficiency 13.6%)
and low Voc,def of 0.297 V was achieved from Sn4+ solution. Our results
demonstrate the preformed uniform kesterite phase enabled by Sn4+ precursor is
the key in achieving highly efficient kesterite absorber material. The lowest
Voc-def and high efficiency achieved here shines new light on the future of
kesterite solar cell.
