  Storage-class memory (SCM) combines the benefits of a solid-state memory,
such as high-performance and robustness, with the archival capabilities and low
cost of conventional hard-disk magnetic storage. Among candidate solid-state
nonvolatile memory technologies that could potentially be used to construct
SCM, flash memory is a well-established technology and have been widely used in
commercially available SCM incarnations. Flash-based SCM enables much better
tradeoffs between performance, space and power than disk-based systems.
However, write endurance is a significant challenge for a flash-based SCM (each
act of writing a bit may slightly damage a cell, so one flash cell can be
written 10^4--10^5 times, depending on the flash technology, before it becomes
unusable). This is a well-documented problem and has received a lot of
attention by manufactures that are using some combination of write reduction
and wear-leveling techniques for achieving longer lifetime. In an effort to
improve flash lifetime, first, by quantifying data longevity in an SCM, we show
that a majority of the data stored in a solid-state SCM do not require long
retention times provided by flash memory (i.e., up to 10 years in modern
devices); second, by exploiting retention time relaxation, we propose a novel
mechanism, called Dense-SLC (D-SLC), which enables us perform multiple writes
into a cell during each erase cycle for lifetime extension; and finally, we
discuss the required changes in the flash management software (FTL) in order to
use this characteristic for extending the lifetime of the solid-state part of
an SCM. Using an extensive simulation-based analysis of a flash-based SCM, we
demonstrate that D-SLC is able to significantly improve device lifetime
(between 5.1X and 8.6X) with no performance overhead and also very small
changes at the FTL software.
