  A discrete model is introduced to account for the time-periodic oscillations
of the photocurrent in a superlattice observed by Kwok et al, in an undoped 40
period AlAs/GaAs superlattice. Basic ingredients are an effective negative
differential resistance due to the sequential resonant tunneling of the
photoexcited carriers through the potential barriers, and a rate equation for
the holes that incorporates photogeneration and recombination. The
photoexciting laser acts as a damping factor ending the oscillations when its
power is large enough. The model explains: (i) the known oscillatory static I-V
characteristic curve through the formation of a domain wall connecting high and
low electric field domains, and (ii) the photocurrent and photoluminescence
time-dependent oscillations after the domain wall is formed. In our model, they
arise from the combined motion of the wall and the shift of the values of the
electric field at the domains. Up to a certain value of the photoexcitation,
the non-uniform field profile with two domains turns out to be metastable:
after the photocurrent oscillations have ceased, the field profile slowly
relaxes toward the uniform stationary solution (which is reached on a much
longer time scale). Multiple stability of stationary states and hysteresis are
also found. An interpretation of the oscillations in the photoluminescence
spectrum is also given.
