  Resistive memory-based reconfigurable systems constructed by CMOS-RRAM
integration hold great promise for low energy and high throughput neuromorphic
computing. However, most RRAM technologies relying on filamentary switching
suffer from variations and noise leading to computational accuracy loss,
increased energy consumption, and overhead by expensive program and verify
schemes. Low ON-state resistance of filamentary RRAM devices further increases
the energy consumption due to high-current read and write operations, and
limits the array size and parallel multiply & accumulate operations.
High-forming voltages needed for filamentary RRAM are not compatible with
advanced CMOS technology nodes. To address all these challenges, we developed a
forming-free and bulk switching RRAM technology based on a trilayer metal-oxide
stack. We systematically engineered a trilayer metal-oxide RRAM stack and
investigated the switching characteristics of RRAM devices with varying
thicknesses and oxygen vacancy distributions across the trilayer to achieve
reliable bulk switching without any filament formation. We demonstrated bulk
switching operation at megaohm regime with high current nonlinearity and
programmed up to 100 levels without compliance current. We developed a
neuromorphic compute-in-memory platform based on trilayer bulk RRAM crossbars
by combining energy-efficient switched-capacitor voltage sensing circuits with
differential encoding of weights to experimentally demonstrate high-accuracy
matrix-vector multiplication. We showcased the computational capability of bulk
RRAM crossbars by implementing a spiking neural network model for an autonomous
navigation/racing task. Our work addresses challenges posed by existing RRAM
technologies and paves the way for neuromorphic computing at the edge under
strict size, weight, and power constraints.
