  We develop a tight-binding model based on linear combination of atomic
orbitals (LCAO) methods to describe the electronic structure of arrays of
acceptors, where the underlying basis states are derived from an
effective-mass-theory solution for a single acceptor in either the spherical
approximation or the cubic model. Our model allows for arbitrarily strong
spin-orbit coupling in the valence band of the semiconductor. We have studied
pairs and dimerised linear chains of acceptors in silicon in the
`independent-hole' approximation, and investigated the conditions for the
existence of topological edge states in the chains. For the finite chain we
find a complex interplay between electrostatic effects and the dimerisation,
with the long-range Coulomb attraction of the hole to the acceptors splitting
off states localised at the end acceptors from the rest of the chain. A further
pair of states then splits off from each band, to form a pair localised on the
next-to-end acceptors, for one sense of the bond alternation and merges into
the bulk bands for the other sense of the alternation. We confirm the
topologically non-trivial nature of these next-to-end localised states by
calculating the Zak phase. We argue that for the more physically accessible
case of one hole per acceptor these long-range electrostatic effects will be
screened out; we show this by treating a simple phenomenologically screened
model in which electrostatic contributions from beyond the nearest neighbours
of acceptor each pair are removed. Topological states are now found on the end
acceptors of the chains. In some cases the termination of the chain required to
produce topological states is not the one expected on the basis of simple
geometry (short versus long bonds); we argue this is because of a non-monotonic
relationship between the bond length and the effective Hamiltonian matrix
elements between the acceptors.
