  Negative feedback is a powerful approach capable of improving several aspects
of a system. In linear electronics, it has been critical for allowing
invariance to device properties. Negative feedback is also known to enhance
linearity in amplification, which is one of the most important foundations of
linear electronics. At the same time, thousands of transistors types have been
made available, suggesting that these devices, in addition to their known
variability of parameters, have distinguishing properties. The current work
reports a systematic approach to quantifying the potential of negative
feedback, with respect to bipolar transistors, as a means to providing device
invariance and linearity. Several methods, including concepts from multivariate
statistics and complex systems, are applied at the theoretical as well as
experimental levels, and a number of interesting results are obtained and
discussed. For instance, it has been verified that the transistors types indeed
have well-defined characteristics which clearly segregate them into groups. The
addition of feedback at moderate and intense levels promoted uniformization of
the properties of these transistors when used in a class A common emitter
configuration. However, such effect occurred with different efficiency
regarding the considered device features, and even intense feedback was unable
to completely eliminate device dependence. This indicates that it would be
interesting to consider the device properties in linear design even when
negative feedback is applied. We also verified that the linearization induced
in the considered experiments is relatively modest, with effects that depend on
type of transfer function of the original devices.
