  Indium tin oxide (Sn-doped In$_2$O$_{3-\delta}$ or ITO) is an interesting and
technologically important transparent conducting oxide. This class of material
has been extensively studied for decades, with research efforts focusing on the
application aspects. The fundamental issues of the electronic conduction
properties of ITO from 300 K down to low temperatures have rarely been
addressed. Studies of the electrical-transport properties over a wide range of
temperature are essential to unraveling the underlying electronic dynamics and
microscopic electronic parameters. We show that one can learn rich physics in
ITO material, including the semi-classical Boltzmann transport, the
quantum-interference electron transport, and the electron-electron interaction
effects in the presence of disorder and granularity. To reveal the
opportunities that the ITO material provides for fundamental research, we
demonstrate a variety of charge transport properties in different forms of ITO
structures, including homogeneous polycrystalline films, homogeneous
single-crystalline nanowires, and inhomogeneous ultrathin films. We not only
address new physics phenomena that arise in ITO but also illustrate the
versatility of the stable ITO material forms for potential applications. We
emphasize that, microscopically, the rich electronic conduction properties of
ITO originate from the inherited free-electron-like energy bandstructure and
low-carrier concentration (as compared with that in typical metals)
characteristics of this class of material. Furthermore, a low carrier
concentration leads to slow electron-phonon relaxation, which causes ($i$) a
small residual resistance ratio, ($ii$) a linear electron diffusion
thermoelectric power in a wide temperature range 1-300 K, and ($iii$) a weak
electron dephasing rate. We focus our discussion on the metallic-like ITO
material.
