  Unprecedented control over the manufacture of electronic devices on nanometer
scale has allowed to perform highly controllable and fine-tuned experiments in
the quantum regime where exotic effects can nowadays be measured. In quantum
dot devices, enhanced conductance below a characteristic energy scale is the
signature of Kondo singlet formation. Precise predictions of quantum transport
properties in similar nanoelectronics devices are desired to design optimal
functionality and control. Standard transport methods suffer from limitations
in nanostructure specifics, set-up design, temperature and voltage regime of
applicability. To overcome these issues, such that we obtain modelling
flexibility and accurate conductance predictions, in this thesis we
analytically derive alternative and improved quantum transport formulations
having as their starting point scattering theory in the Landauer-B\"uttiker
formula, linear response theory in the Kubo formula, nonequilibrium Keldysh
theory in the Meir-Wingreen formula and Fermi liquid theory in the Oguri
formula. We perform a systematic benchmark of our exact expressions, comparing
with the standard approaches using numerical renormalization group techniques.
The new formulations not only reproduce literature results, but also show
higher accuracy and computational efficiency, as well as a wider applicability
under regimes and conditions out of reach by existing methods. We also derive
generalized effective models for multi-orbital two-lead interacting
nanostructures in both Coulomb blockade and mixed-valence regime, which yield
reusable conductance predictions directly in terms of the effective model
parameters. We conclude by applying our novel formulations to complex
nanoelectronics systems, including a single-molecule benzene transistor, a
charge-Kondo quantum dot made from graphene and semiconductor triple quantum
dot.
