  We present an atomistic-continuum model to simulate ultrashort laser-induced
melting processes in semiconductor solids on the example of silicon. The
kinetics of transient non-equilibrium phase transition mechanisms is addressed
with a Molecular Dynamics method at atomic level, whereas the laser light
absorption, strong generated electron-phonon non-equilibrium, fast diffusion
and heat conduction due to photo-excited free carriers are accounted for in the
continuum. We give a detailed description of the model, which is then applied
to study the mechanism of short laser pulse melting of free standing Si films.
The effect of laser-induced pressure and temperature of the lattice on the
melting kinetics is investigated. Two competing melting mechanisms,
heterogeneous and homogeneous, were identified. Apart of classical
heterogeneous melting mechanism, the nucleation of the liquid phase
homogeneously inside the material significantly contributes to the melting
process. The simulations showed, that due to the open diamond structure of the
crystal, the laser-generated internal compressive stresses reduce the crystal
stability against the homogeneous melting. Consequently, the latter can take a
massive character within several picoseconds upon the laser heating. Due to
negative volume of melting of modeled Si material, -7.5%, the material
contracts upon the phase transition, relaxes the compressive stresses and the
subsequent melting proceeds heterogeneously until the excess of thermal energy
is consumed. The threshold fluence value, at which homogeneous nucleation of
liquid starts contributing to the classical heterogeneous propagation of the
solid-liquid interface, is found from the series of simulations at different
laser input fluences. On the example of Si, the laser melting kinetics of
semiconductors was found to be noticeably different from that of metals with
fcc crystal structure.
