  Materials combining both a high refractive index and a wide band gap are of
great interest for optoelectronic and sensor applications. However, these two
properties are typically described by an inverse correlation with high
refractive index appearing in small gap materials and vice-versa. Here, we
conduct a first-principles high-throughput study on more than 4000
semiconductors (with a special focus on oxides). Our data confirm the general
inverse trend between refractive index and band gap but interesting outliers
are also identified. The data are then analyzed through a simple model
involving two main descriptors: the average optical gap and the effective
frequency. The former can be determined directly from the electronic structure
of the compounds, but the latter cannot. This calls for further analysis in
order to obtain a predictive model. Nonetheless, it turns out that the negative
effect of a large band gap on the refractive index can counterbalanced in two
ways: (i) by limiting the difference between the direct band gap and the
average optical gap which can be realized by a narrow distribution in energy of
the optical transitions and (ii) by increasing the effective frequency which
can be achieved through either a high number of transitions from the top of the
valence band to the bottom of the conduction or a high average probability for
these transitions.
  Focusing on oxides, we use our data to investigate how the chemistry
influences this inverse relationship and rationalize why certain classes of
materials would perform better. Our findings can be used to search for new
compounds in many optical applications both in the linear and non-linear regime
(waveguides, optical modulators, laser, frequency converter, etc.).
