  The oxygen evolution reaction (OER) at the surface of semiconductor
photoanodes involves photo-generated holes that oxidize water. A certain
fraction of the holes that reach the surface recombine with electrons from the
conduction band, giving rise to the surface recombination loss. The charge
transfer efficiency, xt, defined as the ratio between the flux of holes that
contribute to the water oxidation reaction and the total flux of holes that
reach the surface, is an important parameter that helps to distinguish between
bulk and surface recombination losses. However, accurate determination of xt by
conventional voltammetry measurements is complicated because only the total
current is measured and it is difficult to discern between different
contributions to the current. Chopped light measurement and hole scavenger
measurement techniques are widely employed to determine xt, but they often lead
to errors. Intensity modulated photocurrent spectroscopy (IMPS) is better
suited for accurate determination of xt because it provides direct information
on both the total photocurrent and the surface recombination current. Careful
analysis of IMPS measurements at different light intensities is required to
account for nonlinear effects. We compare the xt values obtained by these
methods using heteroepitaxial hematite photoanodes. A wide spread of xt values
is obtained by different analysis methods and different light sources and light
intensities. Statistical analysis of the results show good correlation between
different methods for measurements carried out with the same light source,
light intensity and potential. However, there is a considerable spread in the
results obtained by different methods. For accurate determination of xt, we
recommend IMPS measurements with a bias light intensity such that the
irradiance is as close as possible to the standard solar spectrum.
