  We perform ab initio calculations of the coupling between electrons and
small-momentum polar-optical phonons in monolayer transition metal
dichalcogenides of the 2H type: MoS2, MoSe2, MoTe2, WS2, and WSe2. The
so-called Fr\"ohlich interaction is fundamentally affected by the
dimensionality of the system. In a plane-wave framework with periodic boundary
conditions, this coupling is affected by the spurious interaction between the
2D material and its periodic images. To overcome this, we perform density
functional perturbation theory calculations with a truncated Coulomb
interaction in the out-of-plane direction. We show that the 2D Fr\"ohlich
interaction is much stronger than assumed in previous ab initio studies. We
provide analytical models depending on the effective charges and dielectric
properties of the materials to interpret our ab initio calculations. Screening
is shown to play a fundamental role in the phonon-momentum dependency of the
polar-optical coupling, with a crossover between two regimes depending on the
dielectric properties of the material relative to its environment. The
Fr\"ohlich interaction is screened by the dielectric environment in the limit
of small phonon momenta and sharply decreases due to stronger screening by the
monolayer at finite momenta. The small-momentum regime of the ab initio
Fr\"ohlich interaction is reproduced by a simple analytical model, for which we
provide the necessary parameters. At larger momenta, however, direct ab initio
calculations of electron-phonon interactions are necessary to capture
band-specific effects. We compute and compare the carrier relaxation times
associated to the scattering by both LO and A1 phonon modes. While both modes
are capable of relaxing carriers on timescales under the picosecond at room
temperature, their absolute and relative importance vary strongly depending on
the material, the band, and the substrate.
