  The perpendicular magnetic anisotropy (PMA) at magnetic transition
metal/oxide interfaces is a key element in building out-of-plane magnetized
magnetic tunnel junctions for spin-transfer-torque magnetic random access
memory (STT-MRAM). Size downscaling renders magnetic properties more sensitive
to thermal effects. Thus, understanding the temperature dependence of the
magnetic anisotropy is crucial. In this work, we theoretically address the
correlation between temperature dependence of PMA and magnetization in typical
Fe/MgO-based structures. In particular, the possible mechanisms behind the
experiments reporting deviations from the Callen and Callen scaling power law
are analyzed. At ideal interfaces, first-principles calculations reveal (i)
small high-order anisotropy constants compared to first order and (ii) enhanced
exchange constants. Considering these two intrinsic effects in the atomistic
simulations, the temperature-dependence of the total and layer-resolved
anisotropy are found to follow the Callen and Callen scaling power law, thus
ruling out an intrinsic microscopic mechanism underlying deviations from this
law. Besides, two possible extrinsic macroscopic mechanisms are unveiled namely
the influence of the dead layer, often present in the storage layer of STT-MRAM
cells, and the spatial inhomogeneities of the interfacial magnetic anisotropy.
About the first mechanism, we show that the presence of a dead layer tends to
reduce the scaling exponents. In the second mechanism, increasing the
percentage of inhomogeneity in the interfacial PMA is revealed to decrease the
scaling exponent. These results allow us to explain the difference in scaling
exponents relating anisotropy and magnetization thermal variations reported in
earlier experiments. This is crucial for the understanding of the thermal
stability of the storage layer magnetization in STT-MRAM applications.
