  Topological insulators (TIs) are an emerging class of materials that host
highly robust in-gap surface/interface states while maintaining an insulating
bulk. While most notable scientific advancements in this field have been
focused on TIs and related topological crystalline insulators in 2D and 3D,
more recent theoretical work has predicted the existence of 1D
symmetry-protected topological phases in graphene nanoribbons (GNRs). The
topological phase of these laterally-confined, semiconducting strips of
graphene is determined by their width, edge shape, and the terminating unit
cell, and is characterized by a Z2 invariant (similar to 1D solitonic systems).
Interfaces between topologically distinct GNRs characterized by different Z2
are predicted to support half-filled in-gap localized electronic states which
can, in principle, be utilized as a tool for material engineering. Here we
present the rational design and experimental realization of a
topologically-engineered GNR superlattice that hosts a 1D array of such states,
thus generating otherwise inaccessible electronic structure. This strategy also
enables new end states to be engineered directly into the termini of the 1D GNR
superlattice. Atomically-precise topological GNR superlattices were synthesized
from molecular precursors on a Au(111) surface under ultra-high vacuum (UHV)
conditions and characterized by low temperature scanning tunneling microscopy
(STM) and spectroscopy (STS). Our experimental results and first-principles
calculations reveal that the frontier band structure of these GNR superlattices
is defined purely by the coupling between adjacent topological interface
states. This novel manifestation of 1D topological phases presents an entirely
new route to band engineering in 1D materials based on precise control of their
electronic topology, and is a promising platform for future studies of 1D
quantum spin physics.
