  Multilayered artificial neural networks (ANN) have found widespread utility
in classification and recognition applications. The scale and complexity of
such networks together with the inadequacies of general purpose computing
platforms have led to a significant interest in the development of efficient
hardware implementations. In this work, we focus on designing energy efficient
on-chip storage for the synaptic weights. In order to minimize the power
consumption of typical digital CMOS implementations of such large-scale
networks, the digital neurons could be operated reliably at scaled voltages by
reducing the clock frequency. On the contrary, the on-chip synaptic storage
designed using a conventional 6T SRAM is susceptible to bitcell failures at
reduced voltages. However, the intrinsic error resiliency of NNs to small
synaptic weight perturbations enables us to scale the operating voltage of the
6TSRAM. Our analysis on a widely used digit recognition dataset indicates that
the voltage can be scaled by 200mV from the nominal operating voltage (950mV)
for practically no loss (less than 0.5%) in accuracy (22nm predictive
technology). Scaling beyond that causes substantial performance degradation
owing to increased probability of failures in the MSBs of the synaptic weights.
We, therefore propose a significance driven hybrid 8T-6T SRAM, wherein the
sensitive MSBs are stored in 8T bitcells that are robust at scaled voltages due
to decoupled read and write paths. In an effort to further minimize the area
penalty, we present a synaptic-sensitivity driven hybrid memory architecture
consisting of multiple 8T-6T SRAM banks. Our circuit to system-level simulation
framework shows that the proposed synaptic-sensitivity driven architecture
provides a 30.91% reduction in the memory access power with a 10.41% area
overhead, for less than 1% loss in the classification accuracy.
