  We present a comprehensive theoretical description for an irradiation of an
ultrashort light pulse normally on thin materials based on first-principles
time-dependent density functional theory. As the most elaborate scheme, we
develop a microscopic description solving Maxwell equations for light
electromagnetic fields and the time-dependent Kohn-Sham equation for electron
dynamics simultaneously in the time domain using a common spatial grid. We call
it the microscopic Maxwell-TDDFT scheme. We test this scheme for silicon thin
films of various thickness, from a few atomic layers to a few tens of nm. We
show that the microscopic Maxwell-TDDFT scheme provides a satisfactory
description incorporating the electronic structure of thin films in the
first-principles level, multiple reflections of the electromagnetic fields at
the surfaces, and nonlinear light-matter interaction when the incident light
pulse is strong. However, the calculation becomes expensive as the thickness
increases. We then consider two limiting cases of extremely thin and
sufficiently thick films and develop approximate schemes. For the extremely
thin case including two-dimensional atomic-layered materials, a two-dimensional
macroscopic electromagnetism is developed: a two-dimensional susceptibility is
introduced for a weak field, while time evolution equation is derived for an
intense field. For sufficiently thick films, the microscopic Maxwell-TDDFT
scheme is expected to coincide with a description utilizing ordinary
macroscopic electromagnetism. We numerically confirm it comparing the
calculated results: For a weak field, a comparison is made with a description
using the bulk dielectric susceptibility. For a strong field, a comparison is
made with a multiscale Maxwell-TDDFT scheme which the authors' group developed
previously.
