  The Lande g-factors for CdSe quantum dots and rods are investigated within
the framework of the semiempirical tight-binding method. We describe methods
for treating both the n-doped and neutral nanostructures, and then apply these
to a selection of nanocrystals of variable size and shape, focusing on
approximately spherical dots and rods of differing aspect ratio. For the
negatively charged n-doped systems, we observe that the g-factors for
near-spherical CdSe dots are approximately independent of size, but show strong
shape dependence as one axis of the quantum dot is extended to form rod-like
structures. In particular, there is a discontinuity in the magnitude of
g-factor and a transition from anisotropic to isotropic g-factor tensor at
aspect ratio ~1.3. For the neutral systems, we analyze the electron g-factor of
both the conduction and valence band electrons. We find that the behavior of
the electron g-factor in the neutral nanocrystals is generally similar to that
in the n-doped case, showing the same strong shape dependence and discontinuity
in magnitude and anisotropy. In smaller systems the g-factor value is dependent
on the details of the surface model. Comparison with recent measurements of
g-factors for CdSe nanocrystals suggests that the shape dependent transition
may be responsible for the observations of anomalous numbers of g-factors at
certain nanocrystal sizes.
