  A theoretical model for the energy levels in polarization superlattices is
presented. The model includes the effect of strain on the local
polarization-induced electric fields and the subsequent effect on the energy
levels. Two continuum strain models are contrasted. One is the standard strain
model derived from Hooke's law that is typically used to calculate energy
levels in polarization superlattices and quantum wells. The other is a
fully-coupled strain model derived from the thermodynamic equation of state for
piezoelectric materials. The latter is more complete and applicable to strongly
piezoelectric materials where corrections to the standard model are
significant. The underlying theory has been applied to AlGaN/GaN superlattices
and quantum wells. It is found that the fully-coupled strain model yields very
different electric fields from the standard model. The calculated intersubband
transition energies are shifted by approximately 5 -- 19 meV, depending on the
structure. Thus from a device standpoint, the effect of applying the
fully-coupled model produces a very measurable shift in the peak wavelength.
This result has implications for the design of AlGaN/GaN optical switches.
