  Illumination has been long known to affect semiconductor defect properties
during either growth or operating process. Current theories of studying the
illumination effects on defects usually have the assumption of unaffected
formation energies of neutral defects as well as defect transition energy
levels, and use the quasi-Fermi levels to describe behaviors of excess carriers
with conclusions at variance. In this work, we first propose a method to
simulate steady illumination conditions, based on which we demonstrate that
formation energies of neutral defects and defect transition energy levels are
insensitive to illumination. Then, we show that optical and thermal excitation
of electrons can be seen equivalent with each other to reach a steady electron
distribution in a homogeneous semiconductor. Consequently, the electron
distribution can be characterized using just one effective temperature T' and
one universal Fermi level E_F' for a homogeneous semiconductor under continuous
and steady illuminations, which can be seen as a combination of
quasi-equilibrium electron system with T' and a lattice system with T. Using
the new concepts, we uncover the universal mechanisms of illumination effects
on charged defects by treating the band edge states explicitly in the same
footing as the defect states. We find that the formation energies of band edge
'defect' states shift with increased T' of electrons, thus affecting the E_F',
changing defect ionic probabilities, and affecting concentrations of charged
defects. We apply our theory to study the illumination effects on the doping
behaviors in GaN:Mg and CdTe:Sb, obtaining results in accordance with
experimental observations. More interesting experimental defect-related
phenomena under steady illuminations are expected to be understood from our
theory.
