  We study electron transport through a multichannel fractional quantum Hall
edge in the presence of both interchannel interaction and random tunneling
between channels, with emphasis on the role of contacts. The prime example in
our discussion is the edge at filling factor 2/3 with two counterpropagating
channels. Having established a general framework to describe contacts to a
multichannel edge as thermal reservoirs, we particularly focus on the
line-junction model for the contacts and investigate incoherent charge
transport for an arbitrary strength of interchannel interaction beneath the
contacts and, possibly different, outside them. We show that the conductance
does not explicitly depend on the interaction strength either in or outside the
contact regions (implicitly, it only depends through renormalization of the
tunneling rates). Rather, a long line-junction contact is characterized by a
single parameter which defines the modes that are at thermal equilibrium with
the contact and is determined by the interplay of various types of scattering
beneath the contact. This parameter -- playing the role of an effective
interaction strength within an idealized model of thermal reservoirs -- is
generically nonzero and affects the conductance. We formulate a framework of
fractionalization-renormalized tunneling to describe the effect of disorder on
transport in the presence of interchannel interaction. Within this framework,
we give a detailed discussion of charge equilibration for arbitrarily strong
interaction in the bulk of the edge and arbitrary effective interaction
characterizing the line-junction contacts.
