  We present an ab initio full-potential linearized augmented plane-wave
(FLAPW) study of the structural and electronic properties of the two bulk
unstable compounds FeSi (CsCl structure) and FeSi$_2$ (CaF$_2$ structure) which
have recently been grown by molecular beam epitaxy on Si(111). We obtain
equilibrium bulk lattice constants of 2.72 \AA\ and 5.32 \AA\ for FeSi and
FeSi$_2$, respectively. The density of states (DOS) of FeSi agrees well with
experiment, and shows metallic behavior. In agreement with a previous
calculation the DOS of FeSi$_2$ shows a large density of $d$-states at the
Fermi level, explaining the instability of the bulk phase. The electron charge
distributions reveal a small charge transfer from Si to Fe atomic spheres in
both compounds. While in FeSi the Fe-Si bond is indeed partially ionic, we show
that in FeSi$_2$ the electron distribution corresponds to a covalent charge
accumulation in the Fe-Si bond region. The reversed order of $d$-bands in FeSi
with respect to FeSi$_2$ is understood in terms of crystal field splitting and
Fe-Fe nearest neighbor $dd$-interactions in the CsCl structure, and a strong Si
$p$/Fe $d$ bonding in the fluorite structure, respectively.
