  In many applications, the ability of current references to cope with process,
voltage, and temperature (PVT) variations is critical to maintaining
system-level performance. However, temperature-independent current references
operating in the nA range are rarely area-efficient due to the use of large
resistors which occupy a significant silicon area at this current level. In
this article, we introduce a nA-range constant-with-temperature (CWT) current
reference relying on a self-cascode MOSFET (SCM), biased by a
proportional-to-absolute-temperature (PTAT) voltage with a CWT offset. On the
one hand, the proposed reference has been simulated post-layout in 65-nm bulk.
This design consumes 5.4 nW at 0.7 V and achieves a 1.1-nA current with a line
sensitivity (LS) of 0.69 %/V and a temperature coefficient (TC) of 213
ppm/$^\circ$C. On the other hand, the proposed reference has been simulated and
fabricated in 22-nm fully depleted silicon-on-insulator (FDSOI). This second
design requires additional features to mitigate the impact of parasitic diode
leakage at high temperature. In measurement, it consumes 5.8 nW at 0.9 V and
achieves a 0.9-nA current with a 0.39-%/V LS and a 565-ppm/$^\circ$C TC. As a
result of using an SCM, the proposed references occupy a silicon area of 0.0021
mm$^2$ in 65 nm (respectively, 0.0132 mm$^2$ in 22 nm) at least 25$\times$
(respectively, 4$\times$) smaller than state-of-the-art CWT references
operating in the same current range.
