  Understanding charge transfer (CT) between two chemical entities and
subsequent change in their charge densities is essential not only for molecular
species but also for various low-dimensional materials. Because of their
extremely high fraction of surface atoms, two-dimensional (2-D) materials are
most susceptible to charge exchange and exhibit drastically different
physicochemical properties depending on their charge density. In this regard,
spontaneous and uncontrollable ionization of graphene in the ambient air has
caused much confusion and technical difficulty in achieving experimental
reproducibility since its first report in 2004. Moreover, the same ambient hole
doping was soon observed in 2-D semiconductors, which implied that a common
mechanism should be operative and apply to other low-dimensional materials
universally. In this Account, we review our breakthroughs in unraveling the
chemical origin and mechanistic requirements of the hidden CT reactions using
2-D crystals. We developed in-situ optical methods to quantify charge density
using Raman and photoluminescence (PL) spectroscopy and imaging. Using gas and
temperature-controlled in-situ measurements, we revealed that the electrical
holes are injected by the oxygen reduction reaction (ORR): $O_{2}$ + $4H^{+}$ +
$4e^{-}$ $\rightleftharpoons$ $2H_{2}O$, which was independently verified by pH
dependence in HCl solutions. In addition to oxygen and water vapor, the overall
CT reaction requires hydrophilic dielectric substrates, which assist hydration
of the sample-substrate interface. The interface-localized reaction allowed us
to visualized and control interfacial molecular diffusion and CT by varing the
2-D gap spacing and introducing defects. The complete mechanism of the
fundamental charge exchange summarized in this Account will be essential in
exploring material and device properties of other low dimensional materials.
