  Cesium lead bromide (CsPbBr3) is a widely used emitter for perovskite
light-emitting diodes (PeLEDs), benefiting from its large carrier mobility,
high color purity and good thermal stability. However, the three-dimensional
CsPbBr3 films encounter challenges due to their massive intrinsic defects and
weak exciton binding effect, which limited their electroluminescence
efficiency. To address this issue, the prevailing approach is to confine
carriers by reducing dimensionality or size. Nonetheless, this method results
in an increase in surface trap states due to the larger surface-to-volume ratio
and presents difficulties in carrier injection and transport after reducing
lattice splitting to smaller sizes. Here, we successfully achieved proper
control over film crystallization by introducing sodium ions, which facilitate
the epitaxial growth of zero-dimensional Cs4PbBr6 on the surface of CsPbBr3,
forming large grain matrixes where CsPbBr3 is encapsulated by Cs4PbBr6.
Notably, the ions-induced epitaxial growth enables the CsPbBr3 emitter with
significantly reduced trap states, and generates coarsened nanocomposites of
CsPbBr3&Cs4PbBr6 with grain size that surpass the average thickness of the thin
perovskite film, resulting in a wavy surface conducive to light out-coupling.
Additionally, another additive of formamidinium chloride was incorporated to
assist the growth of nanocomposites with larger size and lower defects as well
as better carrier injection and transportation. As a result, our demonstrated
PeLEDs based on the coarsened nanocomposites exhibit low nonradiative
recombination, enhanced light extraction and well-balanced carrier
transportation, leading to high-performance devices. The champion device
achieved an external quantum efficiency of 31.0% at the emission peak of 521 nm
with a narrow full width at half-maximum (FWHM) of 18 nm.
