  Main memories play an important role in overall energy consumption of
embedded systems. Using conventional memory technologies in future designs in
nanoscale era causes a drastic increase in leakage power consumption and
temperature-related problems. Emerging non-volatile memory (NVM) technologies
offer many desirable characteristics such as near-zero leakage power, high
density and non-volatility. They can significantly mitigate the issue of memory
leakage power in future embedded chip-multiprocessor (eCMP) systems. However,
they suffer from challenges such as limited write endurance and high write
energy consumption which restrict them for adoption in modern memory systems.
In this article, we present a convex optimization model to design a 3D stacked
hybrid memory architecture in order to minimize the future embedded systems
energy consumption in the dark silicon era. This proposed approach satisfies
endurance constraint in order to design a reliable memory system. Our convex
model optimizes numbers and placement of eDRAM and STT-RAM memory banks on the
memory layer to exploit the advantages of both technologies in future eCMPs.
Energy consumption, the main challenge in the dark silicon era, is represented
as a major target in this work and it is minimized by the detailed optimization
model in order to design a dark silicon aware 3D Chip-Multiprocessor.
Experimental results show that in comparison with the Baseline memory design,
the proposed architecture improves the energy consumption and performance of
the 3D CMP on average about 61.33 and 9 percent respectively.
