  Controlling light penetration depth in Avalanche Photodiodes (APDs) and
Single Photon Avalanche Diodes (SPADs) play a major role in achieving high
multiplication gain by delivering light near the multiplication region where
the electric field is the strongest. Such control in the penetration depth for
a particular wavelength of light has been previously demonstrated using
integrated photon-trapping nanostructures. In this paper, we show that an
optimized periodic nanostructure design can control the penetration depth for a
wide range of visible and near-infrared wavelengths simultaneously. A
conventional silicon APD structure suffers from high photocarrier loss due to
recombination for shorter wavelengths as they are absorbed near the surface
region, while silicon has low absorption efficiency for longer wavelengths.
This optimized nanostructure design allows shorter wavelengths of light to
penetrate deeper into the device, circumventing recombination sites while
trapping the longer wavelengths in the thin silicon device by bending the
vertically propagating light into horizontal modes. This manipulation of
penetration depth improves the absorption in the device, increasing light
sensitivity while nanostructures reduce the reflectance from the top surface.
While delivery of light near the multiplication region reduces the
photogenerated carrier loss and shortens transit time, leading to high
multiplication gain in APDs and SPADs over a wide spectral range. These high
gain APDs and SPADs will find their potential applications in Time-Of-Flight
Positron Emission Tomography (TOF-PET), Fluorescence Lifetime Imaging
Microscopy (FLIM), and pulse oximetry where high detection efficiency and high
gain-bandwidth is required over a multitude of wavelengths.
