  We introduce a simple, solvable model of double-barrier resonant tunneling
structure which includes the effects of electron-electron and electron-phonon
scattering. The model is based on a generalized effective-mass equation where a
nonlinear coupling is introduced to account for those inelastic scattering
phenomena. The nonlinear term depends on one parameter which is the only
constant in the model to be determined phenomenologically from experimental
data. As an example of the application of the model, we discuss
GaAs-Ga$_{1-x}$Al$_x$As double-barrier structures. When the nonlinear term is
considered, a sideband is observed at an energy of the order of the LO phonon
energy in GaAs in addition to and below the main transmission peak. Fitting of
the computed spectrum to known experimental results allows to find the value of
the nonlinear coupling. As a consequence, we can estimate the electron-phonon
coupling from the shift of the main transmission peak in comparison to the
linear resonant tunneling. We obtain good agreement with values coming from
more sophisticated treatments, which supports our claim that the nonlinear term
consistently includes electron-phonon effects. Finally, we use our simple model
to study magnitudes of interest for applications, namely $I-V$ characteristics,
which are shown to present two negative differential resistance peaks arising
from the main transmission peak and the sideband.
