  Manipulating materials with atomic-scale precision is essential for the
development of next-generation material design toolbox. Tremendous efforts have
been made to advance the compositional, structural, and spatial accuracy of
material deposition and patterning. The family of 2D materials provides an
ideal platform to realize atomic-level material architectures. The wide and
rich physics of these materials have led to fabrication of heterostructures,
superlattices, and twisted structures with breakthrough discoveries and
applications. Here, we report a novel atomic-scale material design tool that
selectively breaks and forms chemical bonds of 2D materials at room
temperature, called atomic-layer substitution (ALS), through which we can
substitute the top layer chalcogen atoms within the 3-atom-thick
transition-metal dichalcogenides using arbitrary patterns. Flipping the layer
via transfer allows us to perform the same procedure on the other side,
yielding programmable in-plane multi-heterostructures with different
out-of-plane crystal symmetry and electric polarization. First-principle
calculations elucidate how the ALS process is overall exothermic in energy and
only has a small reaction barrier, facilitating the reaction to occur at room
temperature. Optical characterizations confirm the fidelity of this design
approach, while TEM shows the direct evidence of Janus structure and suggests
the atomic transition at the interface of designed heterostructure. Finally,
transport and Kelvin probe measurements on MoXY (X,Y=S,Se; X and Y
corresponding to the bottom and top layers) lateral multi-heterostructures
reveal the surface potential and dipole orientation of each region, and the
barrier height between them. Our approach for designing artificial 2D landscape
down to a single layer of atoms can lead to unique electronic, photonic and
mechanical properties previously not found in nature.
