  Electronic transport in monolayer MoS2 is significantly constrained by
several extrinsic factors despite showing good prospects as a transistor
channel material. Our paper aims to unveil the underlying mechanisms of the
electrical and magneto-transport in monolayer MoS2. In order to quantitatively
interpret the magneto-transport behavior of monolayer MoS2 on different
substrate materials, identify the underlying bottlenecks, and provide
guidelines for subsequent improvements, we present a deep analysis of the
magneto-transport properties in the diffusive limit. Our calculations are
performed on suspended monolayer MoS2 and MoS2 on different substrate materials
taking into account remote impurity and the intrinsic and extrinsic phonon
scattering mechanisms. We calculate the crucial transport parameters such as
the Hall mobility, the conductivity tensor elements, the Hall factor, and the
magnetoresistance over a wide range of temperatures, carrier concentrations,
and magnetic fields. The Hall factor being a key quantity for calculating the
carrier concentration and drift mobility, we show that for suspended monolayer
MoS2 at room temperature, the Hall factor value is around 1.43 for magnetic
fields ranging from 0.001 to 1 Tesla, which deviates significantly from the
usual value of unity. In contrast, the Hall factor for various substrates
approaches the ideal value of unity and remains stable in response to the
magnetic field and temperature. We also show that the MoS2 over an Al2O3
substrate is a good choice for the Hall effect detector. Moreover, the
magnetoresistance increases with an increase in magnetic field strength for
smaller magnetic fields before reaching saturation at higher magnetic fields.
The presented theoretical model quantitatively captures the scaling of mobility
and various magnetoresistance coefficients with temperature, carrier densities
and magnetic fields.
