  The control of the charge state of nitrogen-vacancy (NV) centers in diamond
is of primary importance for the stabilization of their quantum-optical
properties, in applications ranging from quantum sensing to quantum computing.
To this purpose, in this work current-injecting micro-electrodes were
fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 {\mu}m
in depth) graphitic micro-electrodes with spacing of 9 {\mu}m were created in
single-crystal diamond substrates by means of a 6 MeV C scanning micro-beam.
The high breakdown field of diamond was exploited to electrically control the
variation in the relative population of the negative (NV-) and neutral (NV0)
charge states of sub-superficial NV centers located in the inter- electrode gap
regions, without incurring into current discharges. Photoluminescence spectra
acquired from the biased electrodes exhibited an electrically induced increase
up to 40% in the NV- population at the expense of the NV0 charge state. The
variation in the relative charge state populations showed a linear dependence
from the injected current at applied biases smaller than 250 V, and was
interpreted as the result of electron trapping at NV sites, consistently with
the Space Charge Limited Current interpretation of the abrupt current increase
observed at 300 V bias voltage. In correspondence of such trap-filling-induced
transition to a high-current regime, a strong electroluminescent emission from
the NV0 centers was observed. In the high-current-injection regime, a decrease
in the NV- population was observed, in contrast with the results obtained at
lower bias voltages. These results disclose new possibilities in the electrical
control of the charge state of NV centers located in the diamond bulk, which
are characterized by longer spin coherence times.
