  It is shown, using density matrix calculation, that high precision
two-dimensional (2D) atom localization in V-type system can be achieved by
applying an additional microwave coupling field between the excited states. In
the present scheme, two lasers, probe and pump, form a V-type system by
coupling the ground state to the excited states while an additional 2D standing
microwave field is used to couple the excited states. The solutions of the
density matrix equations reveal that the off-diagonal density matrix element
$\rho_{31}$, which signify the coherence between the states connected by the
probe laser, is position dependent. As the imaginary part of $\rho_{31}$ is
proportional to the imaginary part of the susceptibility, the probe absorption
also becomes position dependent and in this situation one can readily obtain
information about the atom position from the probe absorption spectra. Perfect
2D atom localization can be achieved by carefully selecting different system
parameters such as detuning, relative phase, dephasing and field strength. It
is found that the atom localization is highly dependent on the probe and
coupling field detuning values. In view of this, a systematic study is
performed on the system parameters and different zones have been identified
which give rise to different absorption shapes, e.g. "dip", "wall", "peak" as
well as negative absorption or amplification. Probe absorption spectrum is also
found to be dependent on relative phase between the applied fields. The
dependence of the dephasing parameter on the probe absorption is investigated
and found to be detrimental to atom localization. The effect of the microwave
coupling strength on "wall" type absorption shape is also studied and the
results are discussed. Finally, a possible practical realization of the present
scheme is discussed in Conclusion section.
