  2D semiconducting transition metal dichalcogenides have been used to make
high-performance electronic, spintronic, and optoelectronic devices. Recently,
room-temperature ferromagnetism and semiconducting property were found in 2D
VSe$_2$ nanoflakes (mechanically exfoliated onto silicon substrates capped with
a oxide layer) and are attributed to the stable 2H-phase of VSe$_2$ in the 2D
limit. Here, our first-principles investigation show that a metastable
semiconducting H' phase can be formed from the H VSe2 monolayer and some other
similar when these 2D H-phase materials are under uniaxial stress or uniaxial
strain. For the uniaxial stress (uniaxial strain) scheme, the H' phase will
become lower in total energy than the H phase at the transition point. The
calculated phonon spectra indicate the dynamical stability of the H' structures
of VSe$_2$, VS$_2$, and CrS$_2$, and the path of phase switching between the H
and H' VSe$_2$ phases is calculated. For VSe$_2$, the H' phase has stronger
ferromagnetism and its Currier temperature can be substantially enhanced by
applying uniaxial stress or strain. Spin-resolved electronic structures, energy
band edges, and effective carrier masses for both of the H and H' phases can be
substantially changed by the applied uniaxial stress or strain, leading to huge
effective masses near the band edge of the strained H' phase. Analysis
indicated that the largest bond length difference between the H' and H phases
can reach -19\% for the Se3-Se3' bond, and there is noticeable covalence for
the Se3-Se3' bond, which switches the valence of the nearby V atoms, leading to
the enhanced ferromagnetism. Therefore, structural and bond reconstruction can
be realized by applying uniaxial stress in 2D ferromagnetic H VSe$_2$ and some
other similar. These can be useful to seeking more insights and phenomena in
such 2D materials for potential applications.
