  Low-disorder and high-mobility 2D electron (or hole) systems undergo an
apparent metal-insulator-transition (MIT) at low temperatures as the carrier
density (n) is varied. In some situations, the 2D MIT can be caused at a fixed
low carrier density by changing an externally applied in-plane magnetic field
parallel to the 2D layer. d\rho/dT changes its sign at some nonuniversal
sample-dependent critical carrier density n_c separating an effective 2D metal
(d\rho/dT >0) for n>n_c from an effective 2D insulator (d\rho/dT<0) for n<n_c.
We study the 2D MIT phenomenon as a possible strong localization induced
crossover process controlled by the Ioffe-Regel criterion, k_F l=1. Calculating
the quantum mean free path (l) in the effective metallic phase from a realistic
transport theory including disorder scattering effects, we solve the integral
equation defined by the Ioffe-Regel criterion to obtain the nonuniversal
critical density n_c as a function of the applicable physical experimental
parameters including disorder strength, in-plane magnetic field, spin and
valley degeneracy, background dielectric constant and carrier effective mass,
and temperature. The key physics underlying the nonuniversal parameter
dependence of the n_c is the temperature and density dependence of the Coulomb
disorder. Our calculated results for the crossover n_c appear to be in
qualitative and semi-quantitative agreement with the available experimental
data in different 2D semiconductor systems lending credence to the possibility
that the apparent 2D MIT signals the onset of the strong localization crossover
in disordered 2D systems. We provide some results for graphene where a
low-temperature 2D MIT becomes possible in the presence of intervalley
scattering. We also provide an extensive comparison with the theoretical
results obtained on the basis of 2D MIT being considered as a percolation
transition.
