  All-dielectric resonant micro- and nano-structures made of the high-index
dielectrics recently emerge as a promising SERS platform which can complement
or potentially replace the metal-based counterparts in routine sensing
measurements. These unique structures combine the highly-tunable optical
response and high field enhancement with the non-invasiveness, i.e., chemically
non-perturbing the analyte, simple chemical modification and recyclability.
Meanwhile, the commercially competitive fabrication technologies for mass
production of such structures are still missing. Here, we attest a chemically
inert black silicon (b-Si) substrate consisting of randomly-arranged spiky Mie
resonators for a true non-invasive SERS identification of the molecular
fingerprints at low concentrations. Based on comparative in-situ SERS tracking
of the para-aminothiophenol -to-4,4` dimercaptoazobenzene catalytic conversion
on the bare and metal-coated b-Si, we justify applicability of the metal-free
b-Si for the ultra-sensitive non-invasive SERS detection at concentration level
as low as 10^-6 M. We perform finite-difference time-domain calculations to
reveal the electromagnetic enhancement provided by an isolated spiky Si
resonator in the visible spectral range. Additional comparative SERS studies of
the PATP-to-DMAB conversion performed with a chemically active bare black
copper oxide as well as SERS detection of the slow daylight-driven PATP-to-DAMP
catalytic conversion in the aqueous methanol solution loaded with colloidal
silver nanoparticles confirm the non-invasive SERS performance of the
all-dielectric crystalline b-Si substrate. Proposed SERS substrate can be
fabricated using simple scalable technology of plasma etching amenable on large
substrate areas making such inexpensive all-dielectric substrates promising for
routine SERS applications, where the non-invasiveness is of mandatory
importance.
