  We have studied electrical switching with S-shaped I-V characteristics in
two-terminal MOM devices based on vanadium dioxide thin films. The switching
effect is associated with the metal-insulator phase transition. Relaxation
oscillations are observed in circuits with VO2-based switches. Dependences of
the oscillator critical frequency Fmax, threshold power and voltage, as well as
the time of current rise, on the switching structure size are obtained by
numerical simulation. The empirical dependence of the threshold voltage on the
switching region dimensions and film thickness is found. It is shown that, for
the VO2 channel sizes of 10*10 nm, Fmax can reach the value of 300 MHz at a
film thickness of ~20 nm. Next, it is shown that oscillatory neural networks
can be implemented on the basis of coupled VO2 oscillators. For the weak
capacitive coupling, we revealed the dependence of the phase difference upon
synchronization on the coupling capacitance value. When the switches are scaled
down, the limiting time of synchronization is reduced to Ts ~13 {\mu}s, and the
number of oscillation periods for the entering to the synchronization mode
remains constant, Ns ~ 17. In the case of weak thermal coupling in the
synchronization mode, we observe in-phase behavior of oscillators, and there is
a certain range of parameters of the supply current, in which the
synchronization effect becomes possible. With a decrease in dimensions, a
decrease in the thermal coupling action radius is observed, which can vary in
the range from 0.5 to 50 {\mu}m for structures with characteristic dimensions
of 0.1 to 5 {\mu}m, respectively. Thermal coupling may have a promising effect
for realization of a 3D integrated oscillatory neural network.
