  We propose and numerically analyze the hybrid
Si-Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} strip waveguide
switches for Mid-IR wavelength of 2.1 $\mu$m. The switches investigated are one
input-one output (on-off) type and one input-two outputs (directional coupler)
type. The reversible transition between the switch states is achieved by
inducing the phase transition from crystalline to amorphous and vice-versa by
application of voltage pulses. The approach of embedding the nanoscale active
material Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} within the
Si waveguide is taken to enhance the interaction of light with the active
region of the switches. The dimensions of the active regions of the switches
are optimized to achieve low insertion loss, low switching energy, and high
extinction ratio. In case of one input-one output switch, an extinction ratio
of 33.79 dB along with an extremely low insertion loss of 0.52 dB is achieved
using optimum Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} length
of only 0.92 $\mu$m. For one input-two outputs switch, an extinction ratio of
10.33 dB and 5.23 dB is obtained in cross and bar state respectively using an
active length of 52 $\mu$m. These values of extinction ratio, which are
otherwise 18.59 dB and 8.33 dB respectively, are due to the necessity of doping
the Si beneath the Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} to
facilitate the electrical conduction needed for Joule heating. A suitable gap
of 100 nm is kept between the active and passive arm of the directional coupler
switch. The electro-thermal co-simulations confirm that phase change occurs in
whole of the Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} region
in both types of switches.
