  Part of developing new strategies for fabrications of nanowire structures
involves in many cases the aid of metal nanoparticles (NPs). It is highly
beneficial if one can define both diameter and position of the initial NPs and
make well-defined nanowire arrays. This sets additional requirement on the NPs
with respect to being able to withstand a pre-growth annealing process (i.e.
de- oxidation of the III-V semiconductor surface) in an epitaxy system.
Recently, it has been demonstrated that Ag may be an alternative to using Au
NPs as seeds for particle-seeded nanowire fabrication. This work brings light
onto the effect of annealing of Au, Ag and Au-Ag alloy NP arrays in two
commonly used epitaxial systems, the Molecular Beam Epitaxy (MBE) and the
Metalorganic Vapor Phase Epitaxy (MOVPE). The NP arrays are fabricated with the
aid of Electron Beam Lithography on GaAs 100 and 111B wafers and the evolution
of the NPs with respect to shape, size and position on the surfaces are studied
after annealing using Scanning Electron Microscopy (SEM). We find that while
the Au NP arrays are found to be stable when annealed up to 600 $^{\circ}$C in
a MOVPE system, a diameter and pitch dependent splitting of the particles are
seen for annealing in a MBE system. The Ag NP arrays are less stable, with
smaller diameters ($\leq$ 50 nm) dissolving during annealing in both epitaxial
systems. In general, the mobility of the NPs is observed to differ between the
two the GaAs 100 and 111B surfaces. While the initial pattern is found be
intact on the GaAs 111B surface for a particular annealing process and particle
type, the increased mobility of the NP on the 100 may influence the initial
pre-defined positions at higher annealing temperatures. The effect of annealing
on Au-Ag alloy NP arrays suggests that these NP can withstand necessary
annealing conditions for a complete de-oxidation of GaAs surfaces.
