  Inorganic Halide perovskites (HP's) of the CsPbX3 (X=I, Br, Cl) type have
reached prominence in photovoltaic solar cell efficiencies. Peculiarly, they
have shown, however, an asymmetry in their ability to be doped by holes rather
than by electrons. Indeed, both structural defect-induced doping as well as
extrinsic impurity-induced doping strangely result in a unipolar doping
(dominantly p-type) with low free carriers concentration. This raises the
question whether such doping limitations presents just a temporary setback due
to insufficient optimization of the doping process, or perhaps this represents
an intrinsic, physically-mandated bottleneck. In this paper we study three
fundamental Design Principles (DP's) for ideal doping, applying them via
density functional doping theory to these HP's, thus identifying the violated
DP that explains the doping limitations and asymmetry in these HP's. Here, the
target DP are: (i) requires that the thermodynamic transition level induced by
the dopants must ideally be energetically shallow both for donors (n-type) or
acceptors (p-type); DP-(ii) requires that the 'Fermi level pinning energies'
for electrons and holes (being the limiting values of the Fermi level before a
structural defect that compensate the doping forms spontaneously) should
ideally be located inside the conduction band for n-type doping and inside the
valence band for p-type doping. DP-(iii) requires that the doping-induced
equilibrium Fermi energy shifts towards the conduction band for n-type doping
(shift towards the valence band, for p-type doping) to be sufficiently large.
We find that, even though in HP's based on Br and Cl there are numerous shallow
level dopants that satisfy DP-(i), in contrast DP-(ii) is satisfied only for
holes and DP-(iii) fail for both holes and electrons, being the ultimate
bottleneck for the n-type doping in Iodine HP's.
