  We have calculated the real part $\chi'$ of the nonlinear dielectric
susceptibility of amorphous insulators in the kHz range, by using the two-level
system model and a nonperturbative numerical quantum approach. At low
temperature $T$, it is first shown that the standard two-level model should
lead to a \textit{decrease} of $\chi'$ when the measuring field $E$ is raised,
since raising $E$ increases the population of the upper level and induces Rabi
oscillations canceling the ones induced from the ground level. This predicted
$E$-induced decrease of $\chi'$ is at \textit{odds} with experiments. However,
a \textit{good agreement} with low-frequency experimental nonlinear data is
achieved if, in our fully quantum simulations, interactions between defects are
taken into account by a new relaxation rate whose efficiency increases as
$\sqrt{E}$, as was proposed recently by Burin \textit{et al.} (Phys. Rev. Lett.
{\bf 86}, 5616 (2001)). In this approach, the behavior of $\chi'$ at low $T$ is
mainly explained by the efficiency of this new relaxation channel. This new
relaxation rate could be further tested since it is shown that it should lead:
\textit{i)} to a completely new nonlinear behavior for samples whose thickness
is $\simeq 10$ nm; \textit{ii)} to a decrease of nonequilibrium effects when
$E$ is increased.
