  We have studied the ambient air oxidation of chemical vapor deposition (CVD)
grown monolayers of the semiconducting transition metal dichalcogenide (S-TMD)
WS$_{2}$ using optical microscopy, laser scanning confocal microscopy (LSCM),
photoluminescence (PL) spectroscopy, and atomic force microscopy (AFM).
Monolayer WS$_{2}$ exposed to ambient conditions in the presence of light
(typical laboratory ambient light for weeks, or typical PL spectroscopy map),
exhibits damage due to oxidation which can be detected with the LSCM and AFM;
though may not be evident in conventional optical microscopy due to poorer
contrast and resolution. Additionally, this oxidation was not random, and
correlated with 'high-symmetry' and red-shifted areas in the PL spectroscopy
map - areas thought to contain a higher concentration of sulfur vacancies. In
contrast, samples kept in ambient and darkness showed no signs of oxidation for
up to 10 months. Low-irradiance/fluence experiments showed that samples
subjected to excitation energies at or above the trion excitation energy (532
nm/2.33 eV and 660 nm/1.88 eV) oxidized in as little as 7 days, even for
irradiances and fluences eight and four orders of magnitude lower
(respectively) than previously reported. No significant oxidation was observed
for 760 nm/1.63 eV light exposure, which lies below the trion excitation energy
in WS$_{2}$. The strong wavelength dependence and apparent lack of irradiance
dependence suggests that ambient oxidation of WS$_{2}$ is initiated by
photon-mediated electronic band transitions, that is, photo-oxidation. These
findings have important implications for prior, present and future studies
concerning S-TMDs measured, stored or manipulated in ambient conditions.
