  Recently it has been suggested that junctions between materials with
different parity violating properties would be characterized by diffusion
layers, analogous to those in the p-n junction. This remark is amplified by a
fuller investigation of two related parity violating effective Lagrangians,
which possess a kind of duality. It is shown that gauge invariance and energy
conservation are sufficient to determine the behaviour at the interface. This
leads to modifications of normal parity-violating electrodynamics. The coupling
of an interface to an external system is a natural solution to the deficiencies
of Maxwell-Chern-Simons theory. A heuristic model of a transistor-like device
is discussed which relates to recent experiments in device technology.
Radiative corrections to Chern-Simons theory induce a local magnetic moment
interaction whose lagrangian is everywhere gauge invariant. The effects of this
interaction are compared to Maxwell-Chern-Simons theory. The dispersion of
classical waves for these models is computed and the laws of reflection and
refraction are found to hold despite the lack of $P$ and $T$ invariance. The
magnetic moment dispersion is gapless in contrast to the Chern-Simons
dispersion except in the case of a scalar field which is covariantly constant.
Both models exhibit optical activity (Faraday effect).
