  Thermoelectric effects in magnetic tunnel junctions are currently an
attractive research topic. Here, we demonstrate that the tunnel magneto-Seebeck
effect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic
1 state and off to 0 by simply changing the magnetic state of the CoFeB
electrodes. We enable this new functionality of magnetic tunnel junctions by
combining a thermal gradient and an electric field. This new technique unveils
the bias-enhanced tunnel magneto-Seebeck effect, which can serve as the basis
for logic devices or memories in a green information technology with a pure
thermal write and read process. Furthermore, the thermally generated voltages
that are referred to as the Seebeck effect are well known to sensitively depend
on the electronic structure and therefore have been valued in solid-state
physics for nearly one hundred years. Here, we lift Seebeck's historic
discovery from 1821 to a new level of current spintronics. Our results show
that the signal crosses zero and can be adjusted by tuning a bias voltage that
is applied between the electrodes of the junction; hence, the name of the
effect is bias-enhanced tunnel magneto-Seebeck effect (bTMS). Via the spin- and
energy-dependent transmission of electrons in the junction, the bTMS effect can
be configured using the bias voltage with much higher control than the tunnel
magnetoresistance (TMR) and even completely suppressed for only one magnetic
configuration, which is either parallel (P) or anti-parallel (AP). This option
allows a readout contrast for the magnetic information of -3000% at room
temperature while maintaining a large signal for one magnetic orientation. This
contrast is much larger than the value that can be obtained using the TMR
effect. Moreover, our measurements are a step towards the experimental
realization of high TMS ratios, which are predicted for specific Co-Fe
compositions.
