  The genomics approach to materials, heralded by increasingly accurate density
functional theory (DFT) calculations conducted on thousands of crystalline
compounds, has led to accelerated material discovery and property predictions.
However, so far amorphous materials have been largely excluded from this as
these systems are notoriously difficult to simulate. Here we study amorphous
Ta$_2$O$_5$ thin films mixed with Al$_2$O$_3$, SiO$_2$, Sc$_2$O$_3$, TiO$_2$,
ZnO, ZrO$_2$, Nb$_2$O$_5$ and HfO$_2$ to identify their crystalline structure
upon post-deposition annealing in air both experimentally and with simulations.
Using the Materials Project open database, phase diagrams based on DFT
calculations are constructed for the mixed oxide systems and the annealing
process is evaluated via grand potential diagrams with varying oxygen chemical
potential. Despite employing calculations based on crystalline bulk materials,
the predictions agree well with the experimentally observed crystallized phases
of the amorphous films. Only in two cases the database leads to incorrect
predictions: in TiO$_2$-doped Ta$_2$O$_5$ because it does not contain a ternary
compound found experimentally, and in Sc$_2$O$_3$-doped Ta$_2$O$_5$ because DFT
overestimates the formation enthalpy difference between Sc$_2$O$_3$ and
Ta$_2$O$_5$ and thus does not reproduce observed oxygen competition effects. In
the absence of ternary phases, the dopant acts as an amorphizer agent
increasing the thermal stability of Ta$_2$O$_5$. These results show that DFT
calculations can be applied for the prediction of crystallized structures of
annealed amorphous materials. This could pave the way for accelerated
\textit{in silico} material discovery and property predictions using the
powerful genomic approach for amorphous oxide coatings employed in a wide range
of applications such as optical coatings, energy storage and electronic
devices.
