  We analyze theoretically the effects of electron-electron and electron-phonon
interactions in the dynamics of a system of a few electrons that can be trapped
to a localized state and detrapped to an extended band state of a small quantum
dot (QD) using a simple model. In our model the QD is described by one or two
single-particle energy levels while the trap is described by one
single-particle level connected to the QD by a hopping Hamiltonian.
Electron-electron Coulomb repulsion and electron-phonon interactions are
included in the localized trap state. In spite of its simplicity the time
dependent model has no analytical solution but a numerically exact one can be
found at a relatively low computational cost. Using values of the parameters
appropriate for defects in semiconductor QDs, we find that the electronic
motion is quasi-periodic in time, with oscillations around mean values that are
set in timescales of typically a few tenths of picoseconds to picoseconds. We
increase the number of electrons initially in the QD from one to four and find
that one electron is transferred to the trap state for three electrons in the
QD. At the more efficient values of the electron-phonon coupling, these
characteristics are quite independent of the value of the electron-electron
Coulomb repulsion in the trap, up to the value above which its infinite limit
is reached. We conclude that strong electron-phonon interaction is an efficient
mechanism that can provide the complete filling of a deep trap state on a sub
to picoseconds timescale, faster than radiative exciton decay and Auger
recombination processes. This leads to the complete suppression of the
luminescence to the deep trap state and to the accumulation of electrons in the
QD.
