  Magnetic tunnel junctions (MTJs) have attracted strong research interest
within the last decades due to their potential use as nonvolatile memory such
as MRAM as well as for magnetic logic applications. Half-metallic magnets
(HMMs) have been suggested as ideal electrode materials for MTJs to achieve an
extremely large tunnel-magnetoresistance (TMR) effect. Despite their high TMR
ratios, MTJs based on HMMs do not exhibit current rectification, i.e., a diode
effect, which was achieved in a magnetic tunnel junction concept based on HMMs
and type-II spin-gapless semiconductors (SGSs). The proposed concept has
recently been experimentally demonstrated using Heusler compounds. In the
present work, we investigate from first-principles MTJs based on type-II SGS
and HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Our $ab$ $initio$ quantum transport calculations based on a nonequilibrium
Green's function method have demonstrated that the MTJs under consideration
exhibit current rectification with relatively high on:off ratios. We show that,
in contrast to conventional semiconductor diodes, the rectification bias
voltage window (or breakdown voltage) of the MTJs is limited by the spin gap of
the HMM and SGS Heusler compounds. A unique feature of the present MTJs is that
the diode effect can be configured dynamically, i.e., depending on the relative
orientation of the magnetization of the electrodes, the MTJ allows the
electrical current to pass either in one or the other direction, which leads to
an inverse TMR effect. The combination of nonvolatility, reconfigurable diode
functionality, tunable rectification voltage window, and high Curie temperature
of the electrode materials makes the proposed MTJs very promising for
room-temperature spintronic applications and opens ways to magnetic memory and
logic concepts as well as logic-in-memory computing.
