  Atomically-thin layers of two-dimensional materials can be assembled in
vertical stacks held together by relatively weak van der Waals forces, allowing
for coupling between monolayer crystals with incommensurate lattices and
arbitrary mutual rotation. A profound consequence of using these degrees of
freedom is the emergence of an overarching periodicity in the local atomic
registry of the constituent crystal structures, known as a moir\'e
superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures
led to the observation of electronic minibands, whereas its effect enhanced by
interlayer resonant conditions in twisted graphene bilayers culminated in the
observation of the superconductor-insulator transition at magic twist angles.
Here, we demonstrate that, in semiconducting heterostructures built of
incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise,
resulting in the resonant enhancement of the moir\'e superlattice effects.
MoSe2 and WS2 are specifically chosen for the near degeneracy of their
conduction band edges to promote the hybridisation of intra- and interlayer
excitons, which manifests itself through a pronounced exciton energy shift as a
periodic function of the interlayer rotation angle. This occurs as hybridised
excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent
superposition of electron states in the adjacent monolayers. For
heterostructures with almost aligned pairs of monolayer crystals, resonant
mixing of the electron states leads to pronounced effects of the
heterostructure's geometrical moir\'e pattern on the hX dispersion and optical
spectrum. Our findings underpin novel strategies for band-structure engineering
in semiconductor devices based on van der Waals heterostructures.
