  Wide-bandgap (WBG) semiconductors have promising applications in power
electronics due to their high voltages, radio frequencies, and tolerant
temperatures. Among all the WBG semiconductors, SiC has attracted attention
because of its high mobility, high thermal stability, and high thermal
conductivity. However, the interfaces between SiC and the corresponding
substrate largely affect the performance of SiC-based electronics. It is
therefore necessary to understand and design the interfacial thermal transport
across the SiC/substrate interfaces, which is critical for the thermal
management design of these SiC-based power electronics. This work
systematically investigates heat transfer across the 3C-SiC/Si, 4H-SiC/Si, and
6H-SiC/Si interfaces using non-equilibrium molecular dynamics simulations and
diffuse mismatch model. We find that the room temperature ITC for 3C-SiC/Si,
4H-SiC/Si, and 6H-SiC/Si interfaces is 932 MW/m2K, 759 MW/m2K, and 697 MW/m2K,
respectively. We also show the contribution of the ITC resulting from elastic
scatterings at room temperature is 80% for 3C-SiC/Si interfaces, 85% for
4H-SiC/Si interfaces, and 82% for 6H-SiC/Si interfaces, respectively. We
further find the ITC contributed by the elastic scattering decreases with the
temperature but remains at a high ratio of 67%~78% even at an ultrahigh
temperature of 1000 K. The reason for such a high elastic ITC is the large
overlap between the vibrational density of states of Si and SiC at low
frequencies (< ~ 18 THz), which is also demonstrated by the diffuse mismatch
mode. It is interesting to find that the inelastic ITC resulting from the
phonons with frequencies higher than the cutoff frequency of Si (i.e., ~18 THz)
can be negligible. That may be because of the wide frequency gap between Si and
SiC, which makes the inelastic scattering among these phonons challenging to
meet the energy and momentum conservation rules.
