  Recent years have seen a rapid increase in research activity in the field of
DRAM-based Processing-In-Memory (PIM) accelerators, where the analog computing
capability of DRAM is employed by minimally changing the inherent structure of
DRAM peripherals to accelerate various data-centric applications. Several
DRAM-based PIM accelerators for Convolutional Neural Networks (CNNs) have also
been reported. Among these, the accelerators leveraging in-DRAM stochastic
arithmetic have shown manifold improvements in processing latency and
throughput, due to the ability of stochastic arithmetic to convert
multiplications into simple bit-wise logical AND operations. However,the use of
in-DRAM stochastic arithmetic for CNN acceleration requires frequent stochastic
to binary number conversions. For that, prior works employ full adder-based or
serial counter based in-DRAM circuits. These circuits consume large area and
incur long latency. Their in-DRAM implementations also require heavy
modifications in DRAM peripherals, which significantly diminishes the benefits
of using stochastic arithmetic in these accelerators. To address these
shortcomings, this paper presents a new substrate for in-DRAM
stochastic-to-binary number conversion called AGNI. AGNI makes minor
modifications in DRAM peripherals using pass transistors, capacitors, encoders,
and charge pumps, and re-purposes the sense amplifiers as voltage comparators,
to enable in-situ binary conversion of input statistic operands of different
sizes with iso latency.
