  Silicon carbide has recently emerged as a promising photonics material due to
its unique properties, including possessing strong second- and third-order
nonlinear coefficients and hosting various color centers that can be utilized
for a wealth of quantum applications. Here, we report the design and
demonstration of octave-spanning microcombs in a
4H-silicon-carbide-on-insulator platform for the first time. Such broadband
operation is enabled by optimized nanofabrication achieving >1 million
intrinsic quality factors in a 36-$\mu$m-radius microring resonator, and
careful dispersion engineering by investigating the dispersion properties of
different mode families. For example, for the fundamental transverse-electric
mode whose dispersion can be tailored by simply varying the microring waveguide
width, we realized a microcomb spectrum covering the wavelength range from 1100
nm to 2400 nm with an on-chip power near 120 mW. While the observed comb state
is verified to be chaotic and not soliton, attaining such a large bandwidth is
a crucial step towards realizing $f$-2$f$ self-referencing. In addition, we
have also observed coherent soliton-crystal state for the fundamental
transverse-magnetic mode, which exhibits stronger dispersion than the
fundamental transverse-electric mode and hence a narrower bandwidth.
