  Electrons (or holes) confined in 2D semiconductor layers have served as model
systems for studying disorder and interaction effects for almost 50 years. In
particular, strong disorder drives the metallic 2D carriers into a strongly
localized Anderson insulator (AI) at low densities whereas pristine 2D
electrons in the presence of no (or little) disorder should solidify into a
Wigner crystal at low carrier densities. Since the disorder in 2D
semiconductors is mostly Coulomb disorder arising from random charged
impurities, the applicable physics is complex as the carriers interact with
each other as well as with the random charged impurities through the same
long-range Coulomb coupling. By critically theoretically analyzing the
experimental transport data in depth using a realistic transport theory to
calculate the low-temperature 2D resistivity as a function of carrier density
in 11 different experimental samples covering 9 different materials, we
establish, utilizing the Ioffe-Regel-Mott criterion for strong localization, a
direct connection between the critical localization density for the 2D
metal-insulator transition (MIT) and the sample mobility deep into the metallic
state, which for clean samples could lead to a localization density low enough
to make the transition appear to be a Wigner crystallization. We believe that
the insulating phase is always an effective Coulomb disorder-induced localized
AI, which may have short-range WC-like correlations at low carrier densities.
Our theoretically calculated disorder-driven critical MIT density agrees with
experimental findings in all 2D samples, even for the ultra-clean samples. In
particular, the extrapolated critical density for the 2D MIT seems to vanish
when the high-density mobility goes to infinity, indicating that transport
probes a disorder-localized insulating ground state independent of how low the
carrier density might be.
