  This paper presents results of numerical simulations of electron tunneling
through water that extend our previous calculations on such systems in several
ways. First, a tip-substrate configuration is used; second, calculations are
carried in the presence of an external potential bias; third, the image
potential that reflects the interaction of the electron with the mobile metal
electrons is taken into account in the static image approximation. Finally,
all-to-all transmission probability calculations are performed in order to get
an order-of-magnitude estimate of the current-voltage characteristics of this
junction model. The computed currents are within the range of the few available
experimental observations on scanning tunneling microscope (STM) currents in
water, indicating that our calculation may have taken into account all the
important physical attributes of such systems. In addition we examine the
effect of the water medium on the spatial distribution of the tunneling flux.
We find that while different water configurations scatter the tunneling
electron in different ways, on the average the water affected loss of
resolution is rather small in the deep tunneling regime but can be substantial
in energy regimes where the tunneling is strongly affected by water-supported
resonance structures.
