  Structural engineering of van der Waals heterostructures via stacking and
twisting has recently been used to create moir\'e superlattices, enabling the
realization of new optical and electronic properties in solid-state systems. In
particular, moir\'e lattices in twisted bilayers of transition metal
dichalcogenides (TMDs) have been shown to lead to exciton trapping, host Mott
insulating and superconducting states, and act as unique Hubbard systems whose
correlated electronic states can be detected and manipulated optically.
Structurally, these twisted heterostructures also feature atomic reconstruction
and domain formation. Unfortunately, due to the nanoscale sizes (~10 nm) of
typical moir\'e domains, the effects of atomic reconstruction on the electronic
and excitonic properties of these heterostructures could not be investigated
systematically and have often been ignored. Here, we use near-0$^o$ twist angle
MoSe$_2$/MoSe$_2$ bilayers with large rhombohedral AB/BA domains to directly
probe excitonic properties of individual domains with far-field optics. We show
that this system features broken mirror/inversion symmetry, with the AB and BA
domains supporting interlayer excitons with out-of-plane (z) electric dipole
moments in opposite directions. The dipole orientation of ground-state
$\Gamma$-K interlayer excitons (X$_{I,1}$) can be flipped with electric fields,
while higher-energy K-K interlayer excitons (X$_{I,2}$) undergo
field-asymmetric hybridization with intralayer K-K excitons (X$_0$). Our study
reveals the profound impacts of crystal symmetry on TMD excitons and points to
new avenues for realizing topologically nontrivial systems, exotic
metasurfaces, collective excitonic phases, and quantum emitter arrays via
domain-pattern engineering.
