  Using positive muons as local probes implanted at low energy enables
gathering information about the material of interest with nanometer depth
resolution (low energy muon spin rotation spectroscopy (LE-$\mu$SR). In this
work, we leverage the capabilities of LE-$\mu$SR to perform an investigation of
the SiO$_\text{2}$-SiC interface. Thermally oxidized samples are investigated
before and after annealing in nitric oxide (NO) and argon (Ar) ambience.
Thermal oxidation is found to result in structural changes both in the SiC
crystal close to the interface and at the interface itself. Annealing in NO
environment is known to passivate the defects leading to a reduction of the
density of interface traps (D$_{it}$); LE-$\mu$SR further reveals that the NO
annealing results in a thin layer of high carrier concentration in SiC,
extending to more than 50 nm depending on the annealing conditions. We also see
indications of Si vacancy (V$_{Si}$) formation in SiC after thermal oxidation.
Following NO annealing, nitrogen occupies the V$_{Si}$ sites, leading to the
reduction in D$_{it}$ and at the same time, creating a charge-carrier-rich
region near the interface. By comparing the LE-$\mu$SR data from a sample with
known doping density, we perform a high-resolution quantification of the free
carrier concentration near the interface after NO annealing and discuss the
origin of observed near-surface variations. Finally, the depletion of carriers
in a MOS capacitor in the region below the interface is shown using LE-$\mu$SR.
The NO annealed sample shows the narrowest depletion region, likely due to the
reduced D$_{it}$ and charge-carrier-rich region near the interface. Our
findings demonstrate the many benefits of utilizing LE-$\mu$SR to study
critical regions of semiconductor devices that have been inaccessible with
other techniques while retaining nanoscale depth resolution and a
non-destructive approach.
