  Drift-diffusion model is an indispensable modeling tool to understand the
carrier dynamics (transport, recombination, and collection) and simulate
practical-efficiency of solar cells (SCs) through taking into account various
carrier recombination losses existing in multilayered device structures.
Exploring the way to predict and approach the SC efficiency limit by using the
drift-diffusion model will enable us to gain more physical insights and design
guidelines for emerging photovoltaics, particularly perovskite solar cells. Our
work finds out that two procedures are the prerequisites for predicting and
approaching the SC efficiency limit. Firstly, the intrinsic radiative
recombination needs to be corrected after adopting optical designs which will
significantly affect the open-circuit voltage at its Shockley-Queisser limit.
Through considering a detailed balance between emission and absorption of
semiconductor materials at the thermal equilibrium, and the Boltzmann
statistics at the non-equilibrium, we offer a different approach to derive the
accurate expression of intrinsic radiative recombination with the optical
corrections for semiconductor materials. The new expression captures light
trapping of the absorbed photons and angular restriction of the emitted photons
simultaneously, which are ignored in the traditional Roosbroeck-Shockley
expression. Secondly, the contact characteristics of the electrodes need to be
carefully engineered to eliminate the charge accumulation and surface
recombination at the electrodes. The selective contact or blocking layer
incorporated nonselective contact that inhibits the surface recombination at
the electrode is another important prerequisite. With the two procedures, the
accurate prediction of efficiency limit and precise evaluation of efficiency
degradation for perovskite solar cells are attainable by the drift-diffusion
model.
