  We report an experimental study by electron paramagnetic resonance (EPR) of
gamma ray irradiation induced point defects in oxygen deficient amorphous SiO2
materials. We have found that three intrinsic (E'gamma, E'delta and triplet)
and one extrinsic ([AlO4]0) paramagnetic centers are induced. All the
paramagnetic defects but E'gamma center are found to reach a concentration
limit value for doses above 10^3 kGy, suggesting a generation process from
precursors. Isochronal thermal treatments of a sample irradiated at 10^3 kGy
have shown that for T>500 K the concentrations of E'gamma and E'delta centers
increase concomitantly to the decrease of [AlO4]0. This occurrence speaks for
an hole transfer process from [AlO4]0 centers to diamagnetic precursors of E'
centers proving the positive charge state of the thermally induced E'gamma and
E'delta centers and giving insight on the origin of E'gamma from an oxygen
vacancy. A comparative study of the E'delta center and of the 10 mT doublet EPR
signals on three distinct materials subjected to isochronal and isothermal
treatments, has shown a quite general linear correlation between these two EPR
signals. This result confirms the attribution of the 10 mT doublet to the
hyperfine structure of the E'delta center, originating from the interaction of
the unpaired electron with a nucleus of 29Si (I=1/2). Analogies between the
microwave saturation properties of E'gamma and E'delta centers and between
those of their hyperfine structures are found and suggest that the unpaired
electron wave function involves similar Si sp3 hybrid orbitals; specifically,
for the E'delta the unpaired electron is supposed to be delocalized over four
such orbitals of four equivalent Si atoms.
