  Quasi-free standing graphene (QFG) obtained by the intercalation of a
hydrogen layer between a SiC surface and the graphene is recognized as an
excellent candidate for the development of graphene based technology. In
addition, the recent proposal of a direct equivalence between the $p$-type
doping typically found for these systems and the spontaneous polarization (SP)
associated to the particular SiC polytype, opens the possibility of tuning the
number of carriers in the Dirac cones without the need of external gate
voltages. However, first principles calculations which could confirm at the
atomic scale the effect of the SP are lacking mainly due to the difficulty of
combining a bulk property such as the SP with the surface confined graphene
doping. Here we develop an approach based on standard density functional theory
(DFT) slab calculations in order to quantify the effect of the SP on the QFG
doping level. First, we present an accurate scheme to estimate the SPs by
exploiting the dependence of the slab's dipole moment with its thickness. Next,
and in order to circumvent the DFT shortcomings associated to polar slab
geometries, a double gold layer is attached at the C-terminated bottom of the
slab which introduces a metal induced gap state that pins the chemical
potential inside the gap thus allowing a meaningful comparison of the QFG
dopings among different polytypes. Furthermore, the slab dipole can be removed
after adjusting the Au-Au interlayer distances. Our results confirm that the SP
does indeed induce a substantial p-doping of the Dirac cones which can be as
large as a few hundreds of meV depending on the hexagonality of the polytype.
The evolution of the doping with the slab thickness reveals that several tens
of SiC bilayers are required to effectively remove the depolarization field and
recover the macroscopic regime whereby the graphene doping should equal the SP.
