  We propose 2D Piezoelectric FET (PeFET) based compute-enabled non-volatile
memory for ternary deep neural networks (DNNs). PeFETs consist of a material
with ferroelectric and piezoelectric properties coupled with Transition Metal
Dichalcogenide channel. We utilize (a) ferroelectricity to store binary bits
(0/1) in the form of polarization (-P/+P) and (b) polarization dependent
piezoelectricity to read the stored state by means of strain-induced bandgap
change in Transition Metal Dichalcogenide channel. The unique read mechanism of
PeFETs enables us to expand the traditional association of +P (-P) with low
(high) resistance states to their dual high (low) resistance depending on read
voltage. Specifically, we demonstrate that +P (-P) stored in PeFETs can be
dynamically configured in (a) a low (high) resistance state for positive read
voltages and (b) their dual high (low) resistance states for negative read
voltages, without afflicting a read disturb. Such a feature, which we name as
Polarization Preserved Piezoelectric Effect Reversal with Dual Voltage Polarity
(PiER), is unique to PeFETs and has not been shown in hitherto explored
memories. We leverage PiER to propose a Strain-enabled Ternary Precision
Computation-in-Memory (STeP-CiM) cell with capabilities of computing the scalar
product of the stored weight and input, both of which are represented with
signed ternary precision. Further, using multi word-line assertion of STeP-CiM
cells, we achieve massively parallel computation of dot products of signed
ternary inputs and weights. Our array level analysis shows 91% lower delay and
improvements of 15% and 91% in energy for in-memory multiply-and-accumulate
operations compared to near-memory design approaches based on SRAM and PeFET
respectively. STeP-CiM exhibits upto 8.91x improvement in performance and 6.07x
average improvement in energy over SRAM/PeFET based near-memory design.
