  Color centers in hexagonal boron nitride (hBN) have attracted considerable
attention due to their remarkable optical properties enabling robust room
temperature photonics and quantum optics applications in the visible spectral
range. On the other hand, identification of the microscopic origin of color
centers in hBN has turned out to be a great challenge that hinders in-depth
theoretical characterization, on-demand fabrication, and development of
integrated photonic devices. This is also true for the blue emitter, which is
an irradiation damage in hBN emitting at 436 nm wavelengths with desirable
properties. Here, we propose the negatively charged nitrogen split interstitial
defect in hBN as a plausible microscopic model for the blue emitter. To this
end, we carry out a comprehensive first principles theoretical study of the
nitrogen interstitial. We carefully analyze the accuracy of first principles
methods and show that the commonly used HSE hybrid exchange-correlation
functional fails to describe the electronic structure of this defect. Using the
generalized Koopman's theorem, we fine tune the functional and obtain a
zero-phonon photoluminescence (ZPL) energy in the blue spectral range. We show
that the defect exhibits high emission rate in the ZPL line and features a
characteristic phonon side band that resembles the blue emitter's spectrum.
Furthermore, we study the electric field dependence of the ZPL and numerically
show that the defect exhibits a quadratic Stark shift for perpendicular to
plane electric fields, making the emitter insensitive to electric field
fluctuations in first order. Our work emphasize the need for assessing the
accuracy of common first principles methods in hBN and exemplifies a workaround
methodology. Furthermore, our work is a step towards understanding the
structure of the blue emitter and utilizing it in photonics applications.
