  Electrical transport properties near an electronic Ising-nematic quantum
critical point in two dimensions are of both theoretical and experimental
interest. In this work, we derive a kinetic equation valid in a broad regime
near the quantum critical point using the memory matrix approach. The formalism
is applied to study the effect of the critical fluctuations on the dc
resistivity through different scattering mechanisms, including umklapp,
impurity scattering, and electron-hole scattering in a compensated metal. We
show that electrical transport in the quantum critical regime exhibits a rich
behavior that depends sensitively on the scattering mechanism and the band
structure. In the case of a single large Fermi surface, the resistivity due to
umklapp scattering crosses over from $\rho\sim T^2$ at low temperature to
sublinear at high temperature. The crossover temperature scales as $q_0^3$,
where $q_0$ is the minimal wavevector for umklapp scattering. Impurity
scattering leads to $\rho-\rho_0\sim T^\alpha$ ($\rho_0$ being the residual
resistivity), where $\alpha$ is either larger than 2 if there is only a single
Fermi sheet present, or 4/3 in the case of multiple Fermi sheets. Finally, in a
perfectly compensated metal with an equal density of electrons and holes, the
low temperature behavior depends strongly on the structure of "cold spots" on
the Fermi surface, where the coupling between the quasiparticles and order
parameter fluctuations vanishes by symmetry. In particular, for a system where
cold spots are present on some (but not all) Fermi sheets, $\rho\sim T^{5/3}$.
At higher temperatures there is a broad crossover regime where $\rho$ either
saturates or $\rho\sim T$, depending on microscopic details. We discuss these
results in the context of recent quantum Monte Carlo simulations of a metallic
Ising nematic critical point, and experiments in certain iron-based
superconductors.
