  Compared to planar (i.e., two-dimensional) NAND flash memory, 3D NAND flash
memory uses a new flash cell design, and vertically stacks dozens of silicon
layers in a single chip. This allows 3D NAND flash memory to increase storage
density using a much less aggressive manufacturing process technology than
planar NAND flash memory. The circuit-level and structural changes in 3D NAND
flash memory significantly alter how different error sources affect the
reliability of the memory.
  In this paper, through experimental characterization of real,
state-of-the-art 3D NAND flash memory chips, we find that 3D NAND flash memory
exhibits three new error sources that were not previously observed in planar
NAND flash memory: (1) layer-to-layer process variation, where the average
error rate of each 3D-stacked layer in a chip is significantly different; (2)
early retention loss, a new phenomenon where the number of errors due to charge
leakage increases quickly within several hours after programming; and (3)
retention interference, a new phenomenon where the rate at which charge leaks
from a flash cell is dependent on the data value stored in the neighboring
cell.
  Based on our experimental results, we develop new analytical models of
layer-to-layer process variation and retention loss in 3D NAND flash memory.
Motivated by our new findings and models, we develop four new techniques to
mitigate process variation and early retention loss in 3D NAND flash memory.
These four techniques are complementary, and can be combined together to
significantly improve flash memory reliability. Compared to a state-of-the-art
baseline, our techniques, when combined, improve flash memory lifetime by
1.85x. Alternatively, if a NAND flash vendor wants to keep the lifetime of the
3D NAND flash memory device constant, our techniques reduce the storage
overhead required to hold error correction information by 78.9%.
