  Thermoelectrics (TE) materials manifest themselves in direct conversion of
temperature differences to electric power and vice versa. Despite remarkable
advances have been achieved in the past decades for various TE systems, the
energy conversion efficiencies of TE devices, which is characterized by a
dimensionless figure-of-merit (ZT ), remain a generally poor factor that
severely limits their competitiveness and range of employment. The bottleneck
for substantially boosting ZT coefficient lies in the strong interdependence of
the physical parameters involved in electronic and phononic transport. Here, we
propose a new strategy of incorporating nanotwinned structures to decouple the
electronic and phononic transport. Combining the new concept of nanotwin with
the previously widely used nanocrystalline approach, the power factor of the Si
nanotwin-nanocrystalline heterostructures is enhanced by 120% compared to bulk
crystalline Si, while the lattice thermal conductivity is reduced to a level
well below the amorphous limit, yielding a theoretical limit of 0.43 for ZT
coefficient at room temperature. This value is almost two orders of magnitude
larger than that for bulk Si and twice of the polycrystalline Si. Even for the
experimentally existing nanotwin-nanocrystalline heterostructures (e.g. grain
size of 5 nm), the ZT coefficient can be as high as 0.2 at room temperature,
which is the highest ZT value among all the Si based bulk nanostructures so
far. Such substantial improvement stems from two aspects: (1) the improvement
of the power factor is caused by the increase of Seebeck coefficient
(degeneracy of the band valley) and the enhancement of electrical conductivity
(the reduction of the effective band mass); (2) the significant reduction of
the lattice thermal conductivity is mainly caused by the extremely strong
phonon-grain boundary and phonon-twin boundary scattering.
