  Thin film oxides are a source of endless fascination for the materials
scientist. These materials are highly flexible, can be integrated into almost
limitless combinations, and exhibit many useful functionalities for device
applications. While precision synthesis techniques, such as molecular beam
epitaxy (MBE) and pulsed laser deposition (PLD), provide a high degree of
control over these systems, there remains a disconnect between ideal and
realized materials. Because thin films adopt structures and chemistries
distinct from their bulk counterparts, it is often difficult to predict what
properties will emerge. The complex energy landscape of the synthesis process
is also strongly influenced by non-equilibrium growth conditions imposed by the
substrate, as well as the kinetics of thin film crystallization and
fluctuations in process variables, all of which can lead to significant
deviations from targeted outcomes. High-resolution structural and chemical
characterization techniques, as described in this volume, are needed to verify
growth models, bound theoretical calculations, and guide materials design.
While many characterization options exist, most are spatially-averaged or
indirect, providing only partial insight into the complex behavior of these
systems. Over the past several decades, scanning transmission electron
microscopy (STEM) has become a cornerstone of oxide heterostructure
characterization owing to its ability to simultaneously resolve structure,
chemistry, and defects at the highest spatial resolution. STEM methods are an
essential complement to averaged scattering techniques, offering a direct
picture of resulting materials that can inform and refine the growth process to
achieve targeted properties. There is arguably no other technique that can
provide such a broad array of information at the atomic-scale, all within a
single experimental session.
