  We report a nanofabrication, control and measurement scheme for charge-based
silicon quantum computing which utilises a new technique of controlled single
ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm
apart, one of which is singly ionized. The lowest two energy states of the
remaining electron form the logical states. Surface electrodes control the
qubit using voltage pulses and dual single electron transistors operating near
the quantum limit provide fast readout with spurious signal rejection. A low
energy (keV) ion beam is used to implant the phosphorus atoms in high-purity
Si. Single atom control during the implantation is achieved by monitoring
on-chip detector electrodes, integrated within the device structure, while
positional accuracy is provided by a nanomachined resist mask. We describe a
construction process for implanted single atom and atom cluster devices with
all components registered to better than 20 nm, together with electrical
characterisation of the readout circuitry. We also discuss universal one- and
two-qubit gate operations for this architecture, providing a possible path
towards quantum computing in silicon.
