  In this research work, roll-to-roll chemical vapor deposited graphene device
electronic transport properties are benchmarked to elucidate and comprehend
mobility degradation in the real-world commercial application of graphene
devices. Multifarious device design morphology in the graphene and
two-dimensional material with diverse background materials compositions and
processing recipes incorporate various scattering sources in the devices. To
understand the nature of mobility degradation in roll-to-roll chemical vapor
deposited graphene production devices, we employed multi-scale, multi-physics
bottom-up, non-equilibrium Green's function-based quantum transport formalism.
In this framework, we numerically incorporate various scattering mechanisms to
deduce the measurand mobility at the last stage of computation to observe
various scattering potential impacts on the production device performance. We
have analyzed the variation in transmission, electronic charge density,
electrostatic Poisson potential, energy-resolved flux density, and
current-voltage characteristics and inferred the Drude mobility with different
scattering potentials in various graphene devices. These scattering mechanisms
treat scattering potentials as the first-order phonon Dyson self-energy term in
the third loop of the two-looped self-consistent Poisson-Non-equilibrium
Green's function iteration. Furthermore, multiple scattering scenarios
implemented through a generalized contact self-energy scattering calculation
ascribe the effect of contact scattering to the graphene device in
quasi-ballistic transport limit. In this scheme, the effect of all the physical
scattering mechanisms is lumped into one energy uncertainty or scattering rate
parameter to include in the device's contact self-energy interaction term bound
by the upper limit of Heisenberg uncertainty for the interacting quantum
charged particles.
