  Single-crystal europium iron garnet (EuIG) thin films epitaxially
strain-grown on gadolinium gallium garnet (GGG)(100) substrates using off-axis
sputtering have strain-induced perpendicular magnetic anisotropy (PMA). By
varying the sputtering conditions, we have tuned the europium/iron (Eu/Fe)
composition ratios in the films to tailor the film strains. The films exhibited
an extremely smooth, particle-free surface with roughness as low as 0.1 nm as
observed using atomic force microscopy. High-resolution x-ray diffraction
analysis and reciprocal space maps showed in-plane epitaxial film growth, very
smooth film/substrate interface, excellent film crystallinity with a small full
width at half maximum of 0.012$^{\circ}$ in the rocking curve scans, and an
in-plane compressive strain without relaxation. In addition, spherical
aberration-corrected scanning transmission electron microscopy showed an
atomically abrupt interface between the EuIG film and GGG. The measured
squarish out-of-plane magnetization-field hysteresis loops by vibrating sample
magnetometry in conjunction with the measurements from angle-dependent x-ray
magnetic dichroism demonstrated the PMA in the films. We have tailored the
magnetic properties of the EuIG thin films, including saturation magnetization
ranging from 71.91 to 124.51 emu/c.c. (increase with the (Eu/Fe) ratios),
coercive field from 27 to 157.64 Oe, and the strength of PMA field ($H_\bot$)
increasing from 4.21 to 18.87 kOe with the in-plane compressive strain from
-0.774 to -1.044%. We have also investigated spin transport in Pt/EuIG bi-layer
structure and evaluated the real part of spin mixing conductance to be
$3.48\times10^{14} {\Omega}^{-1}m^{-2}$. We demonstrated the current-induced
magnetization switching with a low critical switching current density of
$3.5\times10^6 A/cm^2$, showing excellent potential for low-dissipation
spintronic devices.
