  We apply an Ising-type model to estimate the band gaps of the polytypes of
group IV elements (C, Si, and Ge) and binary compounds of groups: IV-IV (SiC,
GeC, and GeSi), and III-V (nitride, phosphide, and arsenide of B, Al, and Ga).
The models use reference band gaps of the simplest polytypes comprising 2--6
bilayers calculated with the hybrid density functional approximation, HSE06. We
report four models capable of estimating band gaps of nine polytypes containing
7 and 8 bilayers with an average error of $\lesssim0.05$ eV. We apply the best
model with an error of $<0.04$ eV to predict the band gaps of 497 polytypes
with up to 15 bilayers in the unit cell, providing a comprehensive view of the
variation in the electronic structure with the degree of hexagonality of the
crystal structure. Within our enumeration, we identify four rhombohedral
polytypes of SiC -- 9$R$, 12$R$, 15$R$(1), and 15$R$(2) -- and perform detailed
stability and band structure analysis. Of these, 15$R$(1) that has not been
experimentally characterized has the widest band gap ($>3.4$ eV); phonon
analysis and cohesive energy reveal 15$R$(1)-SiC to be metastable.
Additionally, we model the energies of valence and conduction bands of the
rhombohedral SiC phases at the high-symmetry points of the Brillouin zone and
predict band structure characteristics around the Fermi level. The models
presented in this study may aid in identifying polytypic phases suitable for
various applications, such as the design of wide-gap materials, that are
relevant to high-voltage applications. In particular, the method holds promise
for forecasting electronic properties of long-period and ultra-long-period
polytypes for which accurate first-principles modeling is computationally
challenging.
