  The silicon nitride integration platform has been successful at realizing
extremely low waveguide losses across the visible to infrared and components
including high performance lasers, filters, resonators, stabilization cavities,
and optical frequency combs. Yet, progress towards implementing low loss, low
power modulators in the silicon nitride platform, while maintaining the planar,
wafer-scale process compatibility has been limited. Here we report a
significant advance in integration of a piezo-electric (PZT) actuated
micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform,
that maintains low optical loss (0.03 dB/cm in a 625 um resonator) at 1550 nm,
with an order of magnitude increase in bandwidth (DC to 20 MHz 3-dB) and order
of magnitude lower power consumption of 20 nW improvement over prior PZT
modulators. The modulator provides a >14 dB ER and 7.1 million Q over the
entire 4 GHz tuning range, a tuning efficiency of 200 MHz/V, and delivers the
linearity required for control applications with 65.1 dBHz2/3 and 73.8 dBHz2/3
IMD3 SFDR at 1 MHz and 10 MHz respectively. We demonstrate two control
applications, laser stabilization in a PDH lock loop, reducing laser frequency
noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator
design can be extended to the visible in the ultra-low loss silicon nitride
platform with minor waveguide design changes. This integration of PZT
modulation in the ultra-low loss silicon nitride waveguide platform enables
modulator control functions in a wide range of visible to IR applications such
as atomic and molecular transition locking for cooling, controllable optical
frequency combs, low-power external cavity tunable lasers, atomic clocks, and
tunable ultra-low linewidth lasers and ultra-low phase noise microwave
synthesizers.
