  Thermal transport properties bear a pivotal role in influencing the
performance of phase change memory (PCM) devices, in which the PCM operation
involves fast and reversible phase change between amorphous and crystalline
phases. In this paper, we present a systematic experimental and theoretical
study on the thermal conductivity of GeTe at high temperatures involving fast
change from amorphous to crystalline phase upon heating. Modulated photothermal
radiometry (MPTR) is used to experimentally determine thermal conductivity of
GeTe at high temperatures in both amorphous and crystalline phases. Thermal
boundary resistances are accurately taken into account for experimental
consideration. To develop a concrete understanding of the underlying physical
mechanism, rigorous and in-depth theoretical exercises are carried out. For
this, first-principles density functional methods and linearized Boltzmann
transport equations (LBTE) are employed using both direct and relaxation time
based approach (RTA) and compared with that of the phenomenological Slack
model. The amorphous phase experimental data has been described using the
minimal thermal conductivity model with sufficient precision. The theoretical
estimation involving direct solution and RTA method are found to retrieve well
the trend of the experimental thermal conductivity for crystalline GeTe at high
temperatures despite being slightly overestimated and underestimated,
respectively, compared to the experimental data. A rough estimate of vacancy
contribution has been found to modify the direct solution in such a way that it
agrees excellently with the experiment. Umklapp scattering has been determined
as the significant phonon-phonon scattering process. Umklapp scattering
parameter has been identified for GeTe for the whole temperature range which
can uniquely determine and compare Umklapp scattering processes for different
materials
