  Magnetic doping with transition metal ions is the most widely used approach
to break timereversal symmetry in a topological insulator, a prerequisite for
unlocking the TIs exotic potential. Recently, we reported the doping of Bi2Te3
thin films with rare earth ions, which, owing to their large magnetic moments,
promise commensurately large magnetic gap openings in the topological surface
states. However, only when doping with Dy has a sizable gap been observed in
angle-resolved photoemission spectroscopy, which persists up to
room-temperature. Although disorder alone could be ruled out as a cause of the
topological phase transition, a fundamental understanding of the magnetic and
electronic properties of Dy:Bi2Te3 remained elusive. Here, we present an X-ray
magnetic circular dichroism, polarized neutron reflectometry, muon spin
rotation, and resonant photoemission study of the microscopic magnetic and
electronic properties. We find that the films are not simply paramagnetic but
that instead the observed behavior can be well explained by the assumption of
slowly fluctuating, inhomogeneous magnetic patches with increasing volume
fraction as the temperature decreases. At liquid helium temperatures, a large
effective magnetization can be easily introduced by the application of moderate
magnetic fields, implying that this material is very suitable for proximity
coupling to an underlying ferromagnetic insulator or in a heterostructure with
transition metal-doped layers. However, the introduction of some charge
carriers by the dopants cannot be excluded at least in these highly doped
samples. Nevertheless, we find that the magnetic order is not mediated via the
conduction channel in these rare earth doped samples and therefore magnetic
order and carrier concentration are expected to be independently controllable.
This is not generally the case for transition metal doped topological
insulators.
