  In the last decades, Bulk-Acoustic-Wave (BAW) filters have been essential
components of 1G-to-4G radios. These devices rely on the high electromechanical
coupling coefficient (kt2~7%), attained by Aluminum Nitride (AlN)
Film-Bulk-Acoustic-Resonators (FBARs), to achieve a wideband and low-loss
frequency response. As the resonance frequency of FBARs is set by their
thickness, the integration of multiple FBARs, to form filters, can only be
attained through the adoption of frequency tuning fabrication steps, such as
mass loading or trimming. However, as the ability to reliably control these
steps significantly decays for thinner FBARs, manufacturing FBARs-based
filters, addressing the needs of emerging IoT and 5G high-frequency
applications, is becoming more and more challenging. Consequently, there is a
quest for new acoustic resonant components, simultaneously exhibiting high kt2
and a lithographic frequency tunability. In this work, a novel class of AlN
resonators is presented. These radio-frequency devices, labelled as
Two-Dimensional-Resonant-Rods (2DRRs), exploit, for the first time, the
unconventional acoustic behavior exhibited by a forest of locally resonant
rods, built in the body of a profiled AlN layer that is sandwiched between a
bottom un-patterned metal plate and a top metallic grating. 2DRRs exhibit
unexplored modal features that make them able to achieve high kt2, a
significant lithographic frequency tunability and a relaxed lithographic
resolution, while relying on an optimal AlN crystalline orientation. The
operation of 2DRRs is discussed, in this work, by means of analytical and
finite-element (FE) investigations. The measured performance of the first
fabricated 2DRR, showing a kt2 in excess of 7.4%, are also reported.
