  The electronic wavefunctions of an atom or molecule are affected by its
interactions with its environment. These interactions dictate electronic and
optical processes at interfaces, and is especially relevant in the case of thin
film optoelectronic devices such as organic solar cells. In these devices,
charge transport and interfaces between multiple layers occur along the
thickness or vertical direction, and thus such electronic interactions are
crucial in determining the device properties. Here, we introduce a new in-situ
spectroscopic ellipsometry data analysis method called DART with the ability to
directly probe electronic coupling due to intermolecular interactions along the
thickness direction using vacuum-deposited organic semiconductor thin films as
a model system. The analysis, which does not require any model fitting, reveals
direct observations of electronic coupling between frontier orbitals under
optical excitations leading to delocalization of the corresponding electronic
wavefunctions with thickness or, equivalently, number of molecules away from
the interface in C60 and MeO-TPD deposited on an insulating substrate (SiO2).
Applying the same methodology for C60 deposited on phthalocyanine thin films,
the analyses shows strong, anomalous features - in comparison to C60 deposited
on SiO2 - of the electronic wavefunctions corresponding to specific excitation
energies in C60 and phthalocyanines. Translation of such interactions in terms
of dielectric constants reveals plasmonic type resonance absorptions resulting
from oscillations of the excited state wavefunctions between the two materials
across the interface. Finally, reproducibility, angstrom-level sensitivity and
simplicity of the method are highlighted showcasing its applicability for
studying electronic coupling between any vapor-deposited material systems where
real-time measurements during deposition are possible.
