  Memristive nanodevices offer new frontiers for computing systems that unite
arithmetic and memory operations on-chip. Here, we explore the integration of
electrochemical metallization cell (ECM) nanodevices with tunable filamentary
switching in nanoscale learning systems. Such devices offer a natural
transition between short-term plasticity (STP) and long-term plasticity (LTP).
In this work, we show that this property can be exploited to efficiently solve
noisy classification tasks. A single crossbar learning scheme is first
introduced and evaluated. Perfect classification is possible only for simple
input patterns, within critical timing parameters, and when device variability
is weak. To overcome these limitations, a dual-crossbar learning system partly
inspired by the extreme learning machine (ELM) approach is then introduced.
This approach outperforms a conventional ELM-inspired system when the first
layer is imprinted before training and testing, and especially so when
variability in device timing evolution is considered: variability is therefore
transformed from an issue to a feature. In attempting to classify the MNIST
database under the same conditions, conventional ELM obtains 84%
classification, the imprinted, uniform device system obtains 88%
classification, and the imprinted, variable device system reaches 92%
classification. We discuss benefits and drawbacks of both systems in terms of
energy, complexity, area imprint, and speed. All these results highlight that
tuning and exploiting intrinsic device timing parameters may be of central
interest to future bio-inspired approximate computing systems.
