  The availability of thin-film lithium niobate on insulator (LNOI) and
advances in processing have led to the emergence of fully integrated LiNbO3
electro-optic devices, including low-voltage, high-speed modulators,
electro-optic frequency combs, and microwave-optical transducers. Yet to date,
LiNbO3 photonic integrated circuits (PICs) have mostly been fabricated using
non-standard etching techniques that lack the reproducibility routinely
achieved in silicon photonics. Widespread future application of thin-film
LiNbO3 requires a reliable and scalable solution using standard processing and
precise lithographic control. Here we demonstrate a heterogeneously integrated
LiNbO3 photonic platform that overcomes the abovementioned challenges by
employing wafer-scale bonding of thin-film LiNbO3 to planarized low-loss
silicon nitride (Si3N4) photonic integrated circuits, a mature foundry-grade
integrated photonic platform. The resulting devices combine the substantial
Pockels effect of LiNbO3 with the scalability, high-yield, and complexity of
the underlying Si3N4 PICs. Importantly, the platform maintains the low
propagation loss (<0.1 dB/cm) and efficient fiber-to-chip coupling (<2.5 dB per
facet) of the Si3N4 waveguides. We find that ten transitions between a mode
confined in the Si3N4 PIC and the hybrid LiNbO$_3$ mode produce less than 0.8
dB additional loss, corresponding to a loss per transition not exceeding 0.1
dB. These nearly lossless adiabatic transitions thus link the low-loss passive
Si3N4 photonic structures with electro-optic components. We demonstrate high-Q
microresonators, optical splitters, electrically tunable photonic dimers,
electro-optic frequency combs, and carrier-envelope phase detection of a
femtosecond laser on the same platform, thus providing a reliable and
foundry-ready solution to low-loss and complex LiNbO3 integrated photonic
circuits.
