  Atomic nanowires on semiconductor surfaces induced by the adsorption of
metallic atoms have attracted a lot of attention as possible hosts of the
elusive, Tomonaga-Luttinger liquid. The Au/Ge(100) system in particular is the
subject of controversy as to whether the Au-induced nanowires do indeed host
exotic, 1D metallic states. We report on a thorough study of the electronic
properties of high quality nanowires formed at the Au/Ge(100) surface. High
resolution ARPES data show the low-lying Au-induced electronic states to
possess a dispersion relation that depends on two orthogonal directions in
k-space. Comparison of the E(k$_x$,k$_y$) surface measured using ARPES to
tight-binding calculations yields hopping parameters in the two different
directions that differ by a factor of two. We find that the larger of the two
hopping parameters corresponds, in fact, to the direction perpendicular to the
nanowires (t$_{\perp}$). This, the topology of the $E$=$E_F$ contour in
k$_{\||}$, and the fact that $t_{\||}$/$t_{\perp}\sim 0.5$ proves that the
Au-induced electron pockets possess a 2D, closed Fermi surface, this firmly
places the Au/Ge(100) nanowire system outside being a potential hosts of a
Tomonaga-Luttinger liquid. We combine these ARPES data with STS measurements of
the spatially-resolved electronic structure and find that the spatially
straight conduction channels observed up to energies of order one electron volt
below the Fermi level do not originate from the Au-induced states seen in the
ARPES data. The former are more likely to be associated with bulk Ge states
that are localized to the subsurface region. Despite our proof of the 2D nature
of the Au-induced nanowire and sub-surface Ge-related states, an anomalous
suppression of the density of states at the Fermi level is observed in both the
STS and ARPES data, this phenomenon is discussed in the light of the effects of
disorder.
