  Single photon detectors have dark count rates that depend strongly on the
bias level for detector operation. In the case of weak light sources such as
novel lasers or single-photon emitters, the rate of counts due to the light
source can be comparable to that of the detector dark counts. In such cases, a
characterization of the statistical properties of the dark counts is necessary.
The dark counts are often assumed to follow a Poisson process that is
statistically independent of the incident photon counts. This assumption must
be validated for specific types of photodetectors. In this work, we focus on
single-photon avalanche photodiodes (SPADs) made for 1550nm. For the InGaAs
detectors used, we find the measured distributions often differ significantly
from Poisson due to the presence of dead time and afterpulsing with the
difference increasing with the bias level. When the dead time is increased to
remove the effects of afterpulsing, it is necessary to correct the measured
distributions for the effects of the dead time. To this end, we apply an
iterative algorithm to remove dead time effects from the probability
distribution for dark counts as well as for the case where light from an
external weak laser source (known to be Poisson) is detected together with the
dark counts. We believe this to be the first instance of the comprehensive
application of this algorithm to real data and find that the corrected
probability distributions are Poisson distributions in both cases. We
additionally use the Grassberger-Procaccia algorithm to estimate the entropy
production rates of the dark count processes, which provides a single metric
that characterizes the temporal correlations between dark counts as well as the
shape of the distribution. We have thus developed a systematic procedure for
taking data with 1550nm SPADs and obtaining accurate photocount statistics to
examine novel light sources.
