  Two-dimensional (2D) heterojunctions display a remarkable potential for
application in high performance, low power electro-optical systems. p-n
junctions based on vertically stacked heterostructures have shown very
promising performance as tunneling transistors, light emitting devices and
photodetectors, and as photovoltaic cells . Although complex vertical
heterostructures were fabricated via van der Waals stacking of different 2D
materials, atomically sharp multi-junctions in lateral heterostructures is a
quite challenging task, but a viable route towards the development of
commercial applications. Previously reported approaches to obtain
single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se),
involve either a single-step or a two-step growth process. However, these
methods lack the flexibility to control the lateral width of the TMD domain as
well as its composition. Here, we report a simple and yet scalable synthesis
approach for the fabrication of lateral multi-junction heterostructures based
on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or
SSe)]. Atomically sharp lateral junctions are sequentially synthesized from
solid precursors by changing only the reactive gas environment in the presence
of water vapor. This allows to selectively control the water-induced oxidation,
volatilization and hence the relative amount of a specific metal oxide vapor,
leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially
dependent photoluminescence and atomic-resolution images confirm the high
crystallinity of the monolayers and the seamless lateral connectivity between
the different TMD domains. These findings could be extended to other families
of 2D materials, and creates the foundation towards the development of complex
and atomically thin in-plane super-lattices, devices and integrated circuits.
