  We report on first-principles calculations of spin-transfer torque (STT) in
epitaxial magnetic tunnel junctions (MTJs) based on ferrimagnetic tetragonal
Mn$_3$Ga electrodes, both as analyzer in an Fe/MgO stack, and also in an
analogous stack with a second Mn$_3$Ga electrode (instead of Fe) as polarizer.
Solving the ballistic transport problem (NEGF + DFT) for the nonequilibrium
spin density in a scattering region extended to over 7.6 nm into the Mn$_3$Ga
electrode, we find long-range spatial oscillations of the STT decaying on a
length scale of a few tens of angstroms, both in the linear response regime and
for finite bias. The oscillatory behavior of the STT in Mn$_3$Ga is robust
against variations in the stack geometry and the applied bias voltage, which
may affect the phase and the amplitude of the spatial oscillation, but the wave
number is only responsive to variations in the longitudinal lattice constant of
Mn$_3$Ga (for fixed in-plane geometry) without being commensurate with the
lattice. Our interpretation of the long-range STT oscillations is based on the
bulk electronic structure of Mn$_3$Ga, taking also into account the
spin-filtering properties of the MgO barrier. Comparison to a fully
Mn$_3$Ga-based stack shows similar STT oscillations, but a significant
enhancement of both the TMR effect at the Fermi level and the STT at the
interface, due to resonant tunneling for the mirror-symmetric junction with
thinner barrier (three monoatomic layers). From the calculated energy
dependence of the spin-polarized transmissions at 0 V, we anticipate asymmetric
or symmetric TMR as a function of the applied bias voltage for the Fe-based and
the all-Mn$_3$Ga stacks, respectively, which also both exhibit a sign change
below 1 V. In the latter (symmetric) case we expect a TMR peak at zero, which
is larger for the thinner barriers because of a spin-polarized resonant
tunneling contribution.
