  This study focuses on developing precise machine learning (ML) regression
models for predicting energy bandgap values based on chemical compositions and
crystal structures. The primary aim is to match the accuracy of predictions
derived from GGA-PBE calculations and validate them through density functional
theory (DFT)-based band structure calculations. We assessed eight standalone ML
regression models, including AdaBoost, Bagging, CatBoost, LGBM, RF, DT, GB, and
XGB. These models were analyzed for their ability to predict GGA-PBE bandgap
values across diverse material structures and compositions, using a dataset
containing bandgap values for 106,113 compounds. Additionally, we constructed
four ensemble models using the stacking method and seven using the bagging
method. These ensemble models incorporated RidgeCV and LassoCV to explore if
ensemble techniques could enhance prediction accuracy. The dataset was divided
into subsets of varying sizes: 10,000, 25,000, 50,000, and 100,000 entries. We
determined feature importance through permutation techniques and established a
correlation coefficient matrix using the Pearson correlation method. The Random
Forest (RF) model emerged as the top performer among standalone models,
achieving an R2 value of 0.943 and an RMSE value of 0.504 eV. Bagging
regression demonstrated improved performance across different dataset sizes
with streamlined feature selection. Ensemble models, particularly bagging,
consistently outperformed standalone models, achieving the best R2 value of
0.948 and an RMSE value of 0.479 eV in the test dataset. Using the
best-performing model, we predicted bandgap values for new half-Heusler
compounds with 18 valence electron counts. These predictions were successfully
validated using accurate DFT calculations. DFT calculations indicated that the
newly predicted compounds are narrow bandgap semiconductors with dynamic
stability.
