  The combination of grating-based frequency-selective optical feedback
mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector
(DBR) structures, with quantum dot (QD) gain materials is a main approach
towards ultra-high-performance semiconductor lasers for many key novel
applications, either as stand-alone sources or as on-chip sources in photonic
integrated circuits. However, the fabrication of conventional buried Bragg
grating structures on GaAs, GaAs/Si, GaSb and other material platforms have
been met with major material regrowth difficulties. We report a novel and
universal approach of introducing laterally coupled dielectric Bragg gratings
to semiconductor lasers that allows highly controllable, reliable and strong
coupling between the grating and the optical mode. We implement such a grating
structure in a low-loss amorphous silicon material alongside GaAs lasers with
InAs/GaAs QD gain layers. The resulting DFB laser arrays emit at pre-designed
0.8 THz LWDM frequency intervals in the 1300 nm band with record performance
parameters, including side mode suppression ratios as high as 52.7 dB,
continuous-wave output power of 27.7 mW (room-temperature) and 10 mW (at
70{\deg}C), and ultra-low relative intensity noise (RIN) of < -165 dB/Hz
(2.5-25 GHz). The devices are also capable of operating isolator-free under
very high external reflection levels of up to -12.3 dB whilst maintaining the
high spectral and ultra-low RIN qualities. These results validate the novel
laterally coupled dielectric grating as a technologically superior and
potentially cost-effective approach for fabricating DFB and DBR lasers free of
their semiconductor material constraints, thus universally applicable across
different material platforms and wavelength bands.
