  In this work, we revisit the issue of the nature of electronic transport in
nickel oxide (NiO) and show that the widely used model of free small polaron
hopping, initially raised to characterize transport in high-purity samples, is
not appropriate for modeling intrinsically doped NiO. Instead, we present
extensive evidence, collected by means of temperature- and frequency-dependent
measurements of the electrical conductivity $\sigma$, that the model of
polaronic inter-acceptor hopping can be used to consistently explain the
electronic conduction process. In this framework, holes are localized to
acceptors (Ni vacancies), forming a strongly bound, polaron-like state. They
can only move through the film by hopping to a neighboring, at least partially
unoccupied, acceptor. This renders the spatial overlap between neighboring
polaronic wave functions a highly critical parameter. The signature of this
process is the occurrence of two temperature regions of the DC conductivity,
separated by about half the Debye temperature $\theta_D/2 \approx 200 K$. For
$T > \theta_D/2$, holes are transferred by phonon-assisted hopping over the
potential barrier between two sites, whereas phonon-assisted tunneling through
the barrier dominates below that temperature. We also show that the degree of
structural and electronic disorder plays a vital role in determining the
characteristics of the transport process: high disorder leads to strong
energetic broadening of the acceptor states such that hopping to more distant
sites may be favored over transfer to nearest neighbors (variable range
hopping). The assumption of high binding energies of the charge carriers at VNi
is in accordance with the recent paradigm shift regarding the understanding of
the electronic structure of NiO: holes doped into NiO couple to Ni 3d spins,
thereby occupying deep polaron-like states within the band gap (Zhang-Rice
bound doublets).
