  Van der Waals layered materials, such as transition metal dichalcogenides
(TMDs), are an exciting class of materials with weak interlayer bonding which
enables one to create van der Waals heterostructures (vdWH). Recent work has
shown that control of the twist angle between layers can have a dramatic effect
on vdWH properties. For TMD vdWH, twist angle has been treated solely through
the use of rigid-lattice moir\'e patterns. No atomic reconstruction, i.e. any
rearrangement of atoms within the individual layers, has been reported
experimentally to date. Here we demonstrate that vdWH of MoSe2/WSe2 and
MoS2/WS2 at twist angles less than 1{\deg} undergo significant atomic level
reconstruction leading to discrete commensurate domains divided by narrow
domain walls, rather than a smoothly varying rigid-lattice moir\'e pattern as
has been assumed in prior work. Using conductive atomic force microscopy
(CAFM), we show that the stacking orientation of the two TMD crystals has a
profound impact on the atomic reconstruction, consistent with recent
theoretical work on graphene/graphene and MoS2/MoS2 structures and experimental
work on graphene bilayers and hBN/graphene vdWH. Transmission electron
microscopy (TEM) provides additional evidence of atomic reconstruction in
MoSe2/WSe2 structures and demonstrates the transition between a rigid-lattice
moir\'e pattern for large angles and atomic reconstruction for small angles. We
use density functional theory to calculate the band structures of the
commensurate reconstructed domains and find that the modulation of the relative
electronic band edges is consistent with the CAFM results and photoluminescence
spectra from reconstructed vdWH. The presence of atomic reconstruction in TMD
heterostructures and the observed impact on nanometer-scale electronic
properties provides fundamental insight into the behavior of this important
class of heterostructures.
