  RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating
and precharging a DRAM row, and thus alternating the voltage of a row's
wordline between low and high voltage levels, can cause bit flips in physically
nearby rows. Recent DRAM chips are more vulnerable to RowHammer: with
technology node scaling, the minimum number of activate-precharge cycles to
induce a RowHammer bit flip reduces and the RowHammer bit error rate increases.
Therefore, it is critical to develop effective and scalable approaches to
protect modern DRAM systems against RowHammer. To enable such solutions, it is
essential to develop a deeper understanding of the RowHammer vulnerability of
modern DRAM chips. However, even though the voltage toggling on a wordline is a
key determinant of RowHammer vulnerability, no prior work experimentally
demonstrates the effect of wordline voltage (VPP) on the RowHammer
vulnerability. Our work closes this gap in understanding.
  This is the first work to experimentally demonstrate on 272 real DRAM chips
that lowering VPP reduces a DRAM chip's RowHammer vulnerability. We show that
lowering VPP 1) increases the number of activate-precharge cycles needed to
induce a RowHammer bit flip by up to 85.8% with an average of 7.4% across all
tested chips and 2) decreases the RowHammer bit error rate by up to 66.9% with
an average of 15.2% across all tested chips. At the same time, reducing VPP
marginally worsens a DRAM cell's access latency, charge restoration, and data
retention time within the guardbands of system-level nominal timing parameters
for 208 out of 272 tested chips. We conclude that reducing VPP is a promising
strategy for reducing a DRAM chip's RowHammer vulnerability without requiring
modifications to DRAM chips.
