  The thermal conductivity (k) of polycrystalline silicon carbide thin films is
relevant for thermal management in emerging silicon carbide applications like
MEMS and optoelectronic devices. In such films k can be substantially reduced
by microstructure features including grain boundaries, thin film surfaces, and
porosity, while these microstructural effects can also be manipulated through
thermal annealing. Here, we investigate these effects by using microfabricated
suspended devices to measure the thermal conductivities of nine LPCVD silicon
carbide films of varying thickness (from 120 - 300 nm) and annealing conditions
(as-grown and annealed at 950 degrees Celsius and 1100 degrees Celsius for 2
hours, and in one case 17 hours). Fourier-transform infrared spectroscopy
(FTIR) and X-ray diffraction (XRD) spectra and density measurements are also
used to characterize the effects of the annealing on the microstructure of
selected samples. Compared to as-deposited films, annealing at 1100 degrees
Celsius typically increases the estimated grain size from 5.5 nm to 6.6 nm
while decreasing the porosity from around 6.5% to practically fully dense. This
corresponds to a 34% increase in the measured thin film thermal conductivity
near room temperature, from 5.8 W/m-K to 7.8 W/m-K. These thermal conductivity
measurements show good agreement of better than 3% with fits using a simple
theoretical model based on kinetic theory combined with a Maxwell-Garnett
porosity correction. Grain boundary scattering plays the dominant role in
reducing the thermal conductivity of these films compared to bulk
single-crystal values, while both grain size increase and porosity decrease
play important roles in the partial k recovery of the films upon annealing.
This work demonstrates the effects of modifying the microstructure and thus the
thermal conductivity of silicon carbide thin films by thermal annealing.
