  In 1963, Moll and Tarui suggested that the field-effect conductance of a
semiconductor could be controlled by the remanent polarization of a
ferroelectric (FE) material to create a ferroelectric field-effect transistor
(FE-FET). However, subsequent efforts to produce a practical, compact FE-FET
have been plagued by low retention and incompatibility with Complementary Metal
Oxide Semiconductor (CMOS) process integration. These difficulties led to the
development of trapped-charge based memory devices (also called floating gate
or flash memory), and these are now the mainstream non-volatile memory (NVM)
technology. Over the past two decades, advances in oxide FE materials have
rejuvenated the field of ferroelectrics and made FE random access memories
(FE-RAM) a commercial reality. Despite these advances, commercial FE-RAM based
on lead zirconium titanate (PZT) has stalled at the 130 nm due to process
challenges.The recent discovery of scandium doped aluminum nitride (AlScN) as a
CMOS compatible ferroelectric presents new opportunities for direct memory
integration with logic transistors due to the low temperature of AlScN
deposition (approx. 350 C). This temperature is compatible with CMOS back end
of line processes. Here, we present a FE-FET device composed of an AlScN FE
dielectric layer integrated with a channel layer of a van der Waals
two-dimensional (2D) semiconductor, MoS2. Our devices show an ON/OFF ratio ~
10^6, concurrent with a normalized memory window of 0.3 V/nm. The devices also
demonstrate stable, two-state memory retention for up to 10^4 seconds. Our
simulations and experimental results suggest that the combination of AlScN and
2D semiconductors is nearly ideal for low power FE-FET memory. These results
demonstrate a new approach in embedded memory and in-memory computing, and
could even lead to effective neuromorphic computing architectures.
