  Aluminum-germanium nanowires (NWs) thermal activated solid state reaction is
a promising system as very sharp and well defined one dimensional contacts can
be created between a metal and a semiconductor, that can become a quantum dot
if the size becomes sufficiently small. In the search for high performance
devices without variability, it is of high interest to allow deterministic
fabrication of nanowire quantum dots, avoiding sample variability and obtaining
atomic scale precision on the fabricated dot size. In this paper, we present a
reliable fabrication process to produce sub-10 nm Ge quantum dots (QDs), using
a combination of ex-situ thermal annealing via rapid thermal annealing (RTA)
and in-situ Joule heating technique in a transmission electron microscope
(TEM). First we present in-situ direct joule heating experiments showing how
the heating electrode could be damaged due to the formation of Al crystals and
voids at the vicinity of the metal/NW contact, likely related with
electro-migration phenomena. We show that the contact quality can be preserved
by including an additional ex-situ RTA step prior to the in-situ heating. The
in-situ observations also show in real-time how the exchange reaction initiates
simultaneously from several locations underneath the Al contact pad, and the Al
crystal grows gradually inside the initial Ge NW with the growth interface
along a Ge(111) lattice plane. Once the reaction front moves out from
underneath the contact metal, two factors jeopardize an atomically accurate
control of the Al/Ge reaction interface. We observed a local acceleration of
the reaction interface due to the electron beam irradiation in the transmission
electron microscope as well as the appearance of large jumps of the interface
in unpassivated Ge wires while a smooth advancement of the reaction interface
was observed in wires with an Al2O3 protecting shell on the surface. Carefully
controlling all aspects of the exchange reaction, we demonstrate a fabrication
process combining ex-situ and in-situ heating techniques to precisely control
and produce axial Al/Ge/Al NW heterostructures with an ultra-short Ge segment
down to 8 nanometers. Practically, the scaling down of Ge segment length is
only limited by the microscope resolution.
