  Scanning tunneling microscopy (STM) and spectroscopy (STS) in combination
with density functional theory (DFT) calculations are employed to study the
surface and subsurface properties of the metastable phase of the phase change
material Ge$_{2}$Sb$_{2}$Te$_{5}$ as grown by molecular beam epitaxy. The (111)
surface is covered by an intact Te layer, which nevertheless allows to detect
the more disordered subsurface layer made of Ge and Sb atoms. Centrally, we
find that the subsurface layer is significantly more ordered than expected for
metastable Ge$_{2}$Sb$_{2}$Te$_{5}$. Firstly, we show that vacancies are nearly
absent within the subsurface layer. Secondly, the potential fluctuation,
tracked by the spatial variation of the valence band onset, is significantly
less than expected for a random distribution of atoms and vacancies in the
subsurface layer. The strength of the fluctuation is compatible with the
potential distribution of charged acceptors without being influenced by other
types of defects. Thirdly, DFT calculations predict a partially tetrahedral Ge
bonding within a disordered subsurface layer, exhibiting a clear fingerprint in
the local density of states as a peak close to the conduction band onset. This
peak is absent in the STS data implying the absence of tetrahedral Ge, which is
likely due to the missing vacancies required for structural relaxation around
the shorter tetrahedral Ge bonds. Finally, isolated defect configurations with
a low density of $~10^{-4}$/nm$^2$ are identified by comparison of STM and DFT
data, which corroborates the significantly improved order in the epitaxial
films driven by the build-up of vacancy layers.
