  In this paper, we propose a novel memory-centric scheme based on CMOS SRAM
for acceleration of data intensive applications. Our proposal aims at
dynamically increasing the on-chip memory storage capacity of SRAM arrays
on-demand. The proposed scheme called - Augmented Memory Computing allows an
SRAM cell to operate in two different modes 1) the Normal mode and 2) the
Augmented mode. In the Normal mode of operation, the SRAM cell functions like a
standard 6 transistor (6T) SRAM cell, storing one bit of data in static format.
While in the Augmented mode, each SRAM cell can store >1 bit of data (in a
dynamic fashion). Specifically, we propose two novel SRAM cells - an 8
transistor (8T) dual bit storage augmented cell and a 7 transistor (7T) ternary
bit storage augmented cell. The proposed 8T dual bit SRAM cell when operated in
the Augmented mode, can store a static bit of data while also, simultaneously,
storing another bit in a dynamic form. Thus, when operated in Augmented mode,
the 8T SRAM cell can store two bits of data - one SRAM-like data and one
DRAM-like data, thereby increasing or augmenting the memory storage capacity.
On the other hand, the proposed 7T ternary bit storage augmented cell can
either store a single SRAM data in Normal mode or can be configured to operate
in Augmented mode, wherein it can store ternary data (3 levels (0,0), (0,1),
(1,0)) in a dynamic manner. Thus, based on the mode of operation, the proposed
augmented memory bit-cells can either store one static bit of data or >1 bit of
data in a dynamic format. We show the feasibility of our proposed bit-cells
through extensive simulations at Globalfoundries 22nm FDX node. It is worth
mentioning, the novel scheme of augmented memory bit-cells can be seamlessly
combined with existing in-memory computing approaches for added energy and
throughput benefits.
