  Low temperature carrier transport properties in two-dimensional (2D)
semiconductor systems can be theoretically well-understood within a mean-field
type RPA-Boltzmann theory as being limited by scattering from screened Coulomb
disorder arising from random quenched charged impurities in the environment. In
the current work, we derive a number of simple analytical formula, supported by
realistic numerical calculations, for the relevant density, mobility, and
temperature range where 2D transport should manifest strong intrinsic (i.e.,
arising purely from electronic effects and not from phonon scattering) metallic
temperature dependence in different semiconductor materials arising entirely
from the 2D screening properties, thus providing an explanation for why the
strong temperature dependence of the 2D resistivity can only be observed in
high-quality and low-disorder (i.e., high-mobility) 2D samples and also why
some high-quality 2D materials (i.e., n-GaAs) manifest much weaker metallicity
than other materials. We also discuss effects of interaction and disorder on
the 2D screening properties in this context as well as compare 2D and 3D
screening functions to comment why such a strong intrinsic temperature
dependence arising from screening cannot occur in 3D metallic carrier
transport. Experimentally verifiable predictions are made about the
quantitative magnitude of the maximum possible low-temperature metallicity in
2D systems and the scaling behavior of the temperature scale controlling the
quantum to classical crossover where the system reverses the sign of the
temperature derivative of the 2D resistivity at high temperatures.
