  We show that different universal values can be obtained for the two-terminal
conductance of a fractional quantum Hall state. At large voltages, or strong
coupling, the conductance of a point-like tunneling junction between an
electron gas reservoir and a Laughlin FQH state at filling fraction $\nu$
saturates to a universal value $G={\frac{2\nu}{\nu+1}} {\frac{e^2}{h}}$. We use
this result to show that devices with different types of contacts between the
reservoir and the FQH state lead to distinct universal values of saturation
conductance which are rational multiples of $e^2/h$. The particular fraction
$e^2/h$ is obtained for the case of electron tunneling in and out of a FQH
liquid by two point contacts. We demonstrate that the problem of tunneling
between an electron gas and a fractional quantum Hall state through an impurity
is exactly equivalent to the problem of tunneling between a chiral Fermi liquid
and a chiral Luttinger liquid. We investigate in detail the case of tunneling
to a $\nu=1/3$ FQH state which we show to be equivalent to the problem of
tunneling between two $g=1/2$ chiral Luttinger liquids. This system provides an
experimental realization of this important exactly solvable case. We use the
results of the single impurity problem to consider the case of many tunneling
centers coupled independently to an electron reservoir, which is relevant to
recent experiments by A.~Chang et.~al. We derive an explicit universal
expression for the voltage and temperature dependent conductance which exhibits
a crossover reminiscent of a Kondo effect. This universal curve fits the
experimental data over the full range of probed voltages.
