  Topological Insulator (TI) has recently emerged as an attractive candidate
for possible application to spintronic circuits because of its strong spin
orbit coupling. TIs are unique materials that have an insulating bulk but
conducting surface states due to band inversion and these surface states are
protected by time reversal symmetry. In this paper, we propose a physics-based
spin dynamics simulation framework for TI/Ferromagnet (TI/FM) bilayer
heterostructures that is able to capture the electronic band structure of a TI
while calculating the electron and spin transport properties. Our model differs
from TI/FM models proposed in the literature in that it is able to account for
the 3D band structure of TIs and the effect of exchange coupling and external
magnetic field on the band structure. Our proposed approach uses 2D surface
Hamiltonian for TIs that includes all necessary features for spin transport
calculations so as to properly model the characteristics of a TI/FM
heterostructure. Using this Hamiltonian and appropriate parameters, we show
that the effect of quantum confinement and exchange coupling are successfully
captured in the calculated surface band structure compared with the quantum
well band diagram of a 3D TI, and matches well with experimental data reported
in the literature. We then show how this calibrated Hamiltonian is used with
the self-consistent non equilibrium Green's functions (NEGF) formalism to
determine the charge and spin transport in TI/FM bilayer heterostructures. Our
calculations agree well with experimental data and capture the unique features
of a TI/FM heterostructure such as high spin Hall angle, high spin conductivity
etc. Finally, we show how the results obtained from NEGF calculations may be
incorporated into the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) formulation to
simulate the magnetization dynamics of an FM layer sitting on top of a TI.
