  DRAM is the prevalent main memory technology, but its long access latency can
limit the performance of many workloads. Although prior works provide DRAM
designs that reduce DRAM access latency, their reduced storage capacities
hinder the performance of workloads that need large memory capacity. Because
the capacity-latency trade-off is fixed at design time, previous works cannot
achieve maximum performance under very different and dynamic workload demands.
  This paper proposes Capacity-Latency-Reconfigurable DRAM (CLR-DRAM), a new
DRAM architecture that enables dynamic capacity-latency trade-off at low cost.
CLR-DRAM allows dynamic reconfiguration of any DRAM row to switch between two
operating modes: 1) max-capacity mode, where every DRAM cell operates
individually to achieve approximately the same storage density as a
density-optimized commodity DRAM chip and 2) high-performance mode, where two
adjacent DRAM cells in a DRAM row and their sense amplifiers are coupled to
operate as a single low-latency logical cell driven by a single logical sense
amplifier.
  We implement CLR-DRAM by adding isolation transistors in each DRAM subarray.
Our evaluations show that CLR-DRAM can improve system performance and DRAM
energy consumption by 18.6% and 29.7% on average with four-core multiprogrammed
workloads. We believe that CLR-DRAM opens new research directions for a system
to adapt to the diverse and dynamically changing memory capacity and access
latency demands of workloads.
