  Many kinds of two-dimensional (2D) van der Waals (vdW) have been demonstrated
to exhibit electromechanical coupling effects, which makes them promising
candidates for next-generation devices, such as piezotronics and
nanogenerators. Recently, flexoelectricity was found to account for the
out-of-plane electromechanical coupling in many 2D transition metal
dichalcogenides (TMDs) who only exhibit in-plane piezoelectricity. However, low
dimensional vdW three-dimensional (3D) topological insulators (TIs) have been
overlooked regarding their electromechanical properties. In this study, for the
first time, we experimentally investigate the electromechanical coupling of low
dimensional 3D TIs with a centrosymmetric crystal structure, where a binary
compound, bismuth selenite (Bi2Se3), is taken as an example. The results of
piezoresponse force microscope (PFM) tests on the Bi2Se3 nanoflakes show that
the material exhibits both out-of-plane and in-plane electromechanical
responses. The Bi2Se3 nanoflake with a thickness of 37 nm possesses an
effective out-of-plane piezoelectric coefficient of ~0.65 pm V-1. With careful
analyses, the electromechanical responses are verified to arise from the
converse flexoelectricity. The measured effective out-of-plane piezoelectric
coefficient is mainly contributed by flexoelectric coefficient, {\mu}_39, which
is estimated to be approximately 0.13 nC m-1. However, it is rather difficult
to obtain the in-plane component of the flexoelectric tensor from the in-plane
PFM measurements since the direction of the in-plane stress is always not
normal to the AFM cantilever axis. The results provide useful guidance for
understanding the flexoelectric effect of low dimensional vdW materials with
centrosymmetric crystal structures. Moreover, the work can pave to way to
explore the electromechanical devices based on the flexoelectricity of vdW TIs.
