  Spatial spread of minority carriers produced by optical excitation in
semiconductors is usually well described by a diffusion equation. The classical
diffusion process can be viewed as a result of a random walk of particles in
which every step has the same probability distribution with a finite second
moment. This allows applying the central limit theorem to the calculation of
the particle distribution after many steps. However, in moderately doped
direct-gap semiconductors the photon recycling process can radically modify the
spatial spread. For this process, the steps in the random walk are defined by
the reabsorption length of photons produced in radiative recombination. The
step distribution has an asymptotic power-law decline. Moments of this
distribution diverge and the displacement is governed by rare but large steps.
Random walk of this kind is called the Levy flight. It corresponds to an
anomalously large spread in space and a modified ("super-diffusive") temporal
evolution. Here we discuss the first direct observation of the hole profile in
n-doped InP samples over distances of the order of a centimeter and more than
two orders of magnitude in hole concentration. Luminescence spectra and
intensity were studied as a function of distance from the photo-excitation in a
rather unusual geometry (homogeneous excitation of the wafer edge and
observation of the luminescence spectra from the broadside). The intensity is
proportional to the minority-carrier concentration and exhibits a slow
power-law drop-off with no changes in the spectral shape. This power law gives
a direct evidence of Levy-flight transport. It has enabled us to evaluate the
index of the distribution, the characteristic distance of the minority-carrier
spread and the photon recycling factor. The results are in good agreement with
the theoretical analysis.
