  In three dimensional (3D) disordered metals, the electron-phonon
(\emph{e}-ph) scattering is the sole significant inelastic process. Thus the
theoretical predication concerning the electron-electron (\emph{e}-\emph{e})
scattering rate $1/\tau_\varphi$ as a function of temperature $T$ in 3D
disordered metal has not been fully tested thus far, though it was proposed 40
years ago [A. Schmid, Z. Phys. \textbf{271}, 251 (1974)]. We report here the
simultaneous observation of small- and large-energy-transfer \emph{e}-\emph{e}
scattering in 3D indium oxide thick films. In temperature region of
$T\gtrsim100$\,K, the temperature dependence of resistivities curves of the
films obey Bloch-Gr\"{u}neisen law, indicating the films possess degenerate
semiconductor characteristics in electrical transport property. In the low
temperature regime, $1/\tau_\varphi$ as a function of $T$ for each film can not
be ascribed to \emph{e}-ph scattering. To quantitatively describe the
temperature behavior of $1/\tau_\varphi$, both the 3D small- and
large-energy-transfer \emph{e}-\emph{e} scattering processes should be
considered (The small- and large-energy-transfer \emph{e}-\emph{e} scattering
rates are proportional to $T^{3/2}$ and $T^2$, respectively). In addition, the
experimental prefactors of $T^{3/2}$ and $T^{2}$ are proportional to
$k_F^{-5/2}\ell^{-3/2}$ and $E_F^{-1}$ ($k_F$ is the Fermi wave number, $\ell$
is the electron elastic mean free path, and $E_F$ is the Fermi energy),
respectively, which are completely consistent with the theoretical
predications. Our experimental results fully demonstrate the validity of
theoretical predications concerning both small- and large-energy-transfer
\emph{e}-\emph{e} scattering rates.
