  Two-dimensional materials are attractive for constructing high-performance
photonic chip-integrated photodetectors because of their remarkable electronic
and optical properties and dangling-bond-free surfaces. However, the reported
chip-integrated two-dimensional material photodetectors were mainly implemented
with the configuration of metal-semiconductor-metal, suffering from high dark
currents and low responsivities at high operation speed. Here, we report a van
der Waals PN heterojunction photodetector, composed of p-type black phosphorous
and n-type molybdenum telluride, integrated on a silicon nitride waveguide. The
built-in electric field of the PN heterojunction significantly suppresses the
dark current and improves the responsivity. Under a bias of 1 V pointing from
n-type molybdenum telluride to p-type black phosphorous, the dark current is
lower than 7 nA, which is more than two orders of magnitude lower than those
reported in other waveguide-integrated black phosphorus photodetectors. An
intrinsic responsivity up to 577 mA/W is obtained. Remarkably, the van der
Waals PN heterojunction is tunable by the electrostatic doping to further
engineer its rectification and improve the photodetection, enabling an
increased responsivity of 709 mA/W. Besides, the heterojunction photodetector
exhibits a response bandwidth of ~1.0 GHz and a uniform photodetection over a
wide spectral range, as experimentally measured from 1500 to 1630 nm. The
demonstrated chip-integrated van der Waals PN heterojunction photodetector with
low dark current, high responsivity and fast response has great potentials to
develop high-performance on-chip photodetectors for various photonic integrated
circuits based on silicon, lithium niobate, polymer, etc.
