  Progress in integrated nanophotonics has enabled large-scale programmable
photonic integrated circuits (PICs) for general-purpose electronic-photonic
systems on a chip. Relying on the weak, volatile thermo-optic or electro-optic
effects, such systems usually exhibit limited reconfigurability along with high
energy consumption and large footprints. These challenges can be addressed by
resorting to chalcogenide phase-change materials (PCMs) such as Ge2Sb2Te5 (GST)
that provide substantial optical contrast in a self-holding fashion upon phase
transitions. However, current PCM-based integrated photonic applications are
limited to single devices or simple PICs due to the poor scalability of the
optical or electrical self-heating actuation approaches. Thermal-conduction
heating via external electrical heaters, instead, allows large-scale
integration and large-area switching, but fast and energy-efficient electrical
control is yet to show. Here, we model electrical switching of GST-clad
integrated nanophotonic structures with graphene heaters based on the
programmable GST-on-silicon platform. Thanks to the ultra-low heat capacity and
high in-plane thermal conductivity of graphene, the proposed structures exhibit
a high switching speed of ~80 MHz and high energy efficiency of 19.2 aJ/nm^3
(6.6 aJ/nm^3) for crystallization (amorphization) while achieving complete
phase transitions to ensure strong attenuation (~6.46 dB/micron) and optical
phase (~0.28 dB/micron at 1550 nm) modulation. Compared with indium tin oxide
and silicon p-i-n heaters, the structures with graphene heaters display two
orders of magnitude higher figure of merits for heating and overall
performance. Our work facilitates the analysis and understanding of the
thermal-conduction heating-enabled phase transitions on PICs and supports the
development of the future large-scale PCM-based electronic-photonic systems.
