  The ruthenium content of half-metallic Mn$_2$Ru$_x$Ga thin films, with a
biaxially-strained inverse Heusler structure, controls the ferrimagnetism that
determines their magnetic and electronic properties. An extensive study of
Mn$_y$Ru$_x$Ga films on MgO (100) substrates with $1.8 \leq y \leq 2.6$ and $x
= 0.5$, 0.7 or 0.9, including crystallographic, magnetic order,
magneto-transport and spin polarisation is undertaken to map specific
composition-dependent properties in this versatile ternary system. A comparison
of experimental densities obtained from X-ray reflectivity with calculated
densities indicates full site occupancy for all compositions, which implies
chemical disorder. All moments lie on the Slater-Pauling plot with slope 1 and
all except $x = 0.5$, $y = 2.2$ exhibit magnetic compensation at \tcmp~below
500~K. The coercivity near \tcmp~exceeds 10~T. Increasing the Mn or Ru content
raises \tcmp, but increasing Ru also decreases the spin polarisation determined
by point contact Andreev reflection. Molecular field theory is used to model
the temperature dependence of the net ferrimagnetic moment and three principal
exchange coefficients are deduced. Marked differences in the shape of anomalous
Hall and net magnetisation hysteresis loops are explained by substantial
canting of the small net moment by up to \SI{40}{\degree} relative to the
$c$-axis in zero field, which is a result of slight non-collinearity of the
Mn$^{4c}$ sublattice moments due to competing intra-sublattice exchange
interactions arising from antisite disorder and excess Mn in the unit cell.
Consequences are reduced spin polarisation and an enhanced intrinsic
contribution to the anomalous Hall effect. The systematic investigation of the
physical properties as a function of $x$ and $y$ will guide the selection of
compositions to meet the requirements for magnonic and spintronic MRG-based
devices.
