  The goal of this thesis is to gain new insights into the drift phenomenon and
identify strategies to mitigate it. An extensive experimental characterization
of PCM devices and in particular drift forms the foundation of each chapter.
With respect to time-scales, ambient temperature, device dimensions, and
combinations thereof, drift is studied under unprecedented conditions. In three
studies, different aspects of drift are examined.
  (1) The origin of structural relaxation: Drift measurements over 9 orders of
magnitude in time reveal the onset of relaxation in a melt-quenched state. The
data is used to appraise two models, the Gibbs relaxation model and the
collective relaxation model. Additionally, a refined version of the collective
relaxation model is introduced and the consequences of a limited number of
structural defects are discussed.
  (2) Exploiting nanoscale effects in phase change memories: Scaling devices to
ever-smaller dimensions is incentivized by the requirement to achieve higher
storage densities and less power consumption. Eventually, confinement and
interfacial effects will govern the device characteristics. Anticipating these
consequences, the feasibility to use a single element, Antimony, is assessed
for the first time. The power efficiency, stability against crystallization,
and drift are characterized under different degrees of confinement.
  (3) State-dependent drift in a projected memory cell: New device concepts are
aiming to reduce drift by decoupling the cell resistance from the electronic
properties of the amorphous phase. A shunt resistor scaling with the amount of
amorphous material is added. Simulations and the drift characteristics of a
projected device put the idealized concept to the test. The contact resistance
between the phase change material and the shunt resistor is identified as a
decisive parameter to achieve the desired device properties.
