  We investigate the Gilbert damping and the magnetization switching of
perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions
adequate for spin-torque operated memories. We study the influence of the boron
content in MgO / FeCoB /Ta systems alloys on their Gilbert damping after
crystallization annealing. Increasing the boron content from 20 to 30\%
increases the crystallization temperature, thereby postponing the onset of
elemental diffusion within the free layer. This reduction of the interdiffusion
of the Ta atoms helps maintaining the Gilbert damping at a low level of 0.009
without any penalty on the anisotropy and the magneto-transport properties up
to the 400$^\circ$C annealing required in CMOS back-end of line processing. In
addition, we show that dual MgO free layers of composition
MgO/FeCoB/Ta/FeCoB/MgO have a substantially lower damping than their
MgO/FeCoB/Ta counterparts, reaching damping parameters as low as 0.0039 for a 3
\r{A} thick Tantalum spacer. This confirms that the dominant channel of damping
is the presence of Ta impurities within the FeCoB alloy. On optimized tunnel
junctions, we then study the duration of the switching events induced by
spin-transfer-torque. We focus on the sub-threshold thermally activated
switching in optimal applied field conditions. From the electrical signatures
of the switching, we infer that once the nucleation has occurred, the reversal
proceeds by a domain wall sweeping though the device at a few 10 m/s. The
smaller the device, the faster its switching. We present an analytical model to
account for our findings. The domain wall velocity is predicted to scale
linearly with the current for devices much larger than the wall width. The wall
velocity depends on the Bloch domain wall width, such that the devices with the
lowest exchange stiffness will be the ones that host the domain walls with the
slowest mobilities.
