  Here we develop and characterize high thermal conductivity/high thermal shock
resistant bulk Ce doped Al2O3 and propose it as a new phosphor converting
capping layer for high-powered/high-brightness solid-state white lighting
(SSWL). The bulk, dense Ce:Al2O3 ceramics have a 0.5 at.% Ce:Al concentration
(significantly higher than the equilibrium solubility limit), and were produced
using a simultaneous solid-state reactive Current Activated Pressure-Assisted
Densification (CAPAD) approach. Ce:Al2O3 exhibits a broadband emission from
400-600nm, which encompasses the entire blue and green portions of the visible
spectrum when pumped with ultra-violet (UV) light that is now commercially
available in UV light emitting devices (LED) and laser diodes (LD). These
broadband phosphors can be used in the commonly employed scheme of mixing with
other UV converting capping layers that emit red light to produce white light.
Alternatively, they can be used in a novel composite down converter approach
that ensures improved thermal-mechanical properties of the converting phosphor
capping layer. In this configuration Ce:Al2O3 is used with proven phosphor
conversion materials such as Ce:YAG as an active encapsulant or as a capping
layer to produce SSWL with an improved bandwidth in the blue portion of the
visible spectrum. In order to study the effect of crystallinity on the Ce PL
emission, we synthesize Ce:YAG ceramics using high-pressure CAPAD at moderate
temperatures to obtain varying crystallinity (amorphous through fully
-crystalline). We investigate the PL characteristics of Ce:Al2O3 and Ce:YAG
from 295K to 4K, revealing unique crystal field effects from the matrix on the
Ce-dopants. The unique PL properties in conjunction with the superior
thermal-mechanical properties of Ce:Al2O3 can be used in
high-powered/high-brightness integrated devices based on high-efficiency UV-LD
that do not suffer
