  High harmonic generation(HHG) is one of the most commonly studied nonlinear
optical phenomena, originating in the ultrafast dynamics of electrons in atomic
gasses and semiconductors. It has attracted much attention because of its
non-perturbative nature and potential for future attosecond laser pulse
sources. On the theory side, a semi-classical picture based on tunneling
ionization of electrons is successfully used in explaining key characteristics
of the HHG. This model assumes that electric fields non-perturbatively excite
electrons beyond the ionization potential or band gap. Thus, intuitively, a
larger gap should lead to an exponentially smaller HHG emission. Despite this
intuition, the HHG in the Mott insulator Ca2RuO4 has shown an unconventional
exponential increase with respect to the gap width. This experiment implies
effects beyond the semi-classical theory. However, most theoretical works have
focused on the dependence of the HHG on external control parameters, and the
gap dependence of the HHG is poorly understood even in non interacting systems.
Thus, it is essential to clarify the gap dependence of the HHG in a fully
quantum mechanical approach. Here, we analyze numerically exactly the gap
dependence of the HHG in two-level systems. We find an increase in the strength
of the HHG when the Rabi frequency is large compared to the gap width.
Furthermore, the relaxation and scattering of electrons increase the visibility
of this gap dependence. Finally, we find that the enhancement rate follows a
universal scaling law regardless of the driving frequency. The existence of
this gap dependence in two-level systems suggests that this unconventional gap
dependence is a universal behavior that can be found not only in Mott
insulators but also in atomic gasses and semiconductors.
