  Understanding (and controlling) hyperfine interactions in semiconductor
nanostructures is important for fundamental studies of material properties as
well as for quantum information processing with electron, hole, and
nuclear-spin states. Through a combination of first-principles
density-functional theory (DFT) and $\mathbf{k}\cdot\mathbf{p}$ theory, we have
calculated hyperfine tensors for electrons and holes in GaAs and crystalline
silicon. Accounting for relativistic effects near the nuclear core, we find
contact hyperfine interactions for electrons in GaAs that are consistent with
Knight-shift measurements performed on GaAs quantum wells and are roughly
consistent with prior estimates extrapolated from measurements on InSb. We find
that a combination of DFT and $\mathbf{k}\cdot\mathbf{p}$ theory is necessary
to accurately determine the contact hyperfine interaction for electrons at a
conduction-band minimum in silicon that is consistent with bulk Knight-shift
measurements. For hole spins in GaAs, the overall magnitude of the hyperfine
couplings we find from DFT is consistent with previous theory based on
free-atom properties, and with heavy-hole Overhauser shifts measured in GaAs
(and InGaAs) quantum dots. In addition, we theoretically predict that the
heavy-hole hyperfine coupling to the As nuclear spins is stronger and almost
purely Ising-like, while the (weaker) coupling to the Ga nuclear spins has
significant non-Ising corrections. In the case of hole spins in silicon, we
find (surprisingly) that the strength of the hyperfine interaction in the
valence band is comparable to that in the conduction band and that the
hyperfine tensors are highly anisotropic (Ising-like) in the heavy-hole
subspace. These results suggest that the hyperfine coupling cannot be ruled out
as a limiting mechanism for coherence ($T_2^{\ast}$) times recently measured
for heavy holes in silicon quantum dots.
