  The magnetic phase diagrams, and other physical characteristics, of the hole-
doped {\em La$_{2-x}$Sr$_x$CuO$_4$} and electron-doped {\em Nd$_{2-x}$Ce$_x$
CuO$_4$} high-temperature superconductors are profoundly different. Starting
with the $t-t^{\prime}-J$ model, the spin distortions and the spatial distri-
bution of carriers for the multiply-doped systems will be related to the diffe-
rent ground states' single-hole quasiparticles. The low doping limit of the
hole-doped material corresponds to $\vec k = (\pi/2,\pi/2)$ quasiparticles,
states that generate so-called Shraiman-Siggia long-ranged dipolar spin distor-
tions via backflow. We propose that for the electron-doped materials the
single- hole ground state corresponds to $\vec k = (\pi,0)$ quasiparticles; we
show that the spin distortions generated by such carriers are short-ranged.
Then, we demonstrate the effect of this single-carrier difference in
many-carrier ground states via exact diagonalization results by evaluating
$S(\vec q)$ for up to 4 carriers in small clusters. Also, the different
single-carrier quasiparticles generate important differences in the spatial
distributions: for the hole-doped material the quasiparticles tend to stay far
apart from one another, whereas for the electron-doped material we find
tendencies consistent with the clustering of carriers, and possibly of
low-energy fluctuations into an electronic phase separated state. Lastly, we
propose the extrapolation of an approach based on the $t-t^{\prime}-J$ model to
the hole-doped 123 system.
