  Wide band gap semiconductors are essential for today's electronic devices and
energy applications due to their high optical transparency, as well as
controllable carrier concentration and electrical conductivity. There are many
categories of materials that can be defined as wide band gap semiconductors.
The most intensively investigated are transparent conductive oxides (TCOs) such
as ITO and IGZO used in displays, carbides and nitrides used in power
electronics, as well as emerging halides (e.g. CuI) and 2D electronic materials
used in various optoelectronic devices. Chalcogen-based (S, Se, Te) wide band
gap semiconductors are less heavily investigated but stand out due to their
propensity for p-type doping, high mobilities, high valence band positions
(i.e. low ionization potentials), and broad applications in electronic devices
such as CdTe solar cells. This manuscript provides a review of wide band gap
chalcogenide semiconductors. First, we outline general materials design
parameters of high performing transparent conductors. We proceed to summarize
progress in wide band gap (Eg > 2 eV) chalcogenide materials, such as II-VI MCh
binaries, CuMCh2 chalcopyrites, Cu3MCh4 sulvanites, mixed anion layered
CuMCh(O,F), and 2D materials, among others, and discuss computational
predictions of potential new candidates in this family, highlighting their
optical and electrical properties. We finally review applications of
chalcogenide wide band gap semiconductors, e.g. photovoltaic and
photoelectrochemical solar cells, transparent transistors, and diodes, that
employ wide band gap chalcogenides as either an active or passive layer. By
examining, categorizing, and discussing prospective directions in wide band gap
chalcogenides, this review aims to inspire continued research on this emerging
class of transparent conductors and to enable future innovations for
optoelectronic devices.
