  Ge$_{1-x}$Sn$_x$ semiconductors hold the premise for large-scale, monolithic
mid-infrared photonics and optoelectronics. However, despite the successful
demonstration of several Ge$_{1-x}$Sn$_x$-based photodetectors and emitters,
key fundamental properties of this material system are yet to be fully explored
and understood. In particular, little is known about the role of the material
properties in controlling the recombination mechanisms and their consequences
on the carrier lifetime. Evaluating the latter is in fact fraught with large
uncertainties that are exacerbated by the difficulty to investigate narrow
bandgap semiconductors. To alleviate these limitations, herein we demonstrate
that the radiative carrier lifetime can be obtained from straightforward
excitation power- and temperature- dependent photoluminescence measurements. To
this end, a theoretical framework is introduced to simulate the measured
spectra by combining the band structure calculations from the k.p theory and
the envelope function approximation (EFA) to estimate the absorption and
spontaneous emission. Based on this model, the temperature-dependent emission
from Ge$_{0.83}$Sn$_{0.17}$ samples at a biaxial compressive strain of $-1.3\%$
was investigated. The simulated spectra reproduce accurately the measured data
thereby enabling the evaluation of the steady-state radiative carrier
lifetimes, which are found in the 3-22 ns range for temperatures between 10 and
300 K at an excitation power of 0.9 kW/cm$^2$. For a lower power of 0.07
kW/cm$^2$, the obtained lifetime has a value of 1.9 ns at 4 K. The demonstrated
approach yielding the radiative lifetime from simple emission spectra will
provide valuable inputs to improve the design and modeling of
Ge$_{1-x}$Sn$_x$-based devices.
