  The interplay between spin and charge transport in electrically and
magnetically inhomogeneous semiconductor systems is investigated theoretically.
In particular, the theory of spin-polarized bipolar transport in magnetic p-n
junctions is formulated, generalizing the classic Shockley model. The theory
assumes that in the depletion layer the nonequilibrium chemical potentials of
spin up and spin down carriers are constant and carrier recombination and spin
relaxation are inhibited. Under the general conditions of an applied bias and
externally injected (source) spin, the model formulates analytically carrier
and spin transport in magnetic p-n junctions at low bias. The evaluation of the
carrier and spin densities at the depletion layer establishes the necessary
boundary conditions for solving the diffusive transport equations in the bulk
regions separately, thus greatly simplifying the problem. The carrier and spin
density and current profiles in the bulk regions are calculated and the I-V
characteristics of the junction are obtained. It is demonstrated that spin
injection through the depletion layer of a magnetic p-n junction is not
possible unless nonequilibrium spin accumulates in the bulk regions--either by
external spin injection or by the application of a large bias. Implications of
the theory for majority spin injection across the depletion layer, minority
spin pumping and spin amplification, giant magnetoresistance, spin-voltaic
effect, biasing electrode spin injection, and magnetic drift in the bulk
regions are discussed in details, and illustrated using the example of a GaAs
based magnetic p-n junction.
