  This paper summarizes our work on experimentally characterizing, mitigating,
and recovering read disturb errors in multi-level cell (MLC) NAND flash memory,
which was published in DSN 2015, and examines the work's significance and
future potential. NAND flash memory reliability continues to degrade as the
memory is scaled down and more bits are programmed per cell. A key contributor
to this reduced reliability is read disturb, where a read to one row of cells
impacts the threshold voltages of unread flash cells in different rows of the
same block.
  For the first time in open literature, this work experimentally characterizes
read disturb errors on state-of-the-art 2Y-nm (i.e., 20-24 nm) MLC NAND flash
memory chips. Our findings (1) correlate the magnitude of threshold voltage
shifts with read operation counts, (2) demonstrate how program/erase cycle
count and retention age affect the read-disturb-induced error rate, and (3)
identify that lowering pass-through voltage levels reduces the impact of read
disturb and extend flash lifetime. Particularly, we find that the probability
of read disturb errors increases with both higher wear-out and higher
pass-through voltage levels.
  We leverage these findings to develop two new techniques. The first technique
mitigates read disturb errors by dynamically tuning the pass-through voltage on
a per-block basis. Using real workload traces, our evaluations show that this
technique increases flash memory endurance by an average of 21%. The second
technique recovers from previously-uncorrectable flash errors by identifying
and probabilistically correcting cells susceptible to read disturb errors. Our
evaluations show that this recovery technique reduces the raw bit error rate by
36%.
