  The morphology of crystalline thin films evolving on flat rigid substrates by
condensation of extra film atoms or by evaporation of their own atoms in the
surrounding vapor is studied in the framework of the theory of Stress Driven
Rearrangement Instabilities (SDRI). By following the SDRI literature both the
elastic contributions due to the mismatch between the film and the substrate
lattices at their theoretical (free-standing) elastic equilibrium, and a
curvature perturbative regularization preventing the problem to be ill-posed
due to the otherwise exhibited backward parabolicity, are added in the
evolution equation. The resulting Cauchy problem under investigation consists
in an anisotropic mean-curvature type flow of the fourth order on the film
profiles, which are assumed to be parametrizable as graphs of functions
measuring the film thicknesses, coupled with a quasistatic elastic problem in
the film bulks. Periodic boundary conditions are considered. The results are
twofold: the existence of a regular solution for a finite period of time and
the stability for all times, of both Lyapunov and asymptotic type, of any
configuration given by a flat film profile and the related elastic equilibrium.
Such achievements represent both the generalization to three dimensions of a
previous result in two dimensions for a similar Cauchy problem, and the
complement of the analysis previously carried out in the literature for the
symmetric situation in which the film evolution is not influenced by the
evaporation-condensation process here considered, but it is entirely due to the
volume preserving surface-diffusion process, which is instead here neglected.
The method is based on minimizing movements, which allow to exploit the the
gradient-flow structure of the evolution equation.
