  Background: Edge-on-irradiated silicon detectors are currently being
investigated for use in photon-counting CT applications. The low atomic number
of silicon leads to a significant number of incident photons being Compton
scattered in the detector, depositing a part of their energy and potentially
being counted multiple times. Although the physics of Compton scatter is well
established, the effects of Compton interactions in the detector on image
quality for an edge-on-irradiated silicon detector have still not been
thoroughly investigated.
  Purpose: To investigate and explain effects of Compton scatter on
zero-frequency DQE for photon-counting CT using edge-on-irradiated silicon
detectors.
  Methods: We extend an existing Monte Carlo model of an edge-on-irradiated
silicon detector to develop projection and image domain performance metrics for
pure density and pure spectral imaging tasks. We show that the lowest energy
threshold of the detector can be used as an effective discriminator of primary
counts and cross-talk caused by Compton scatter. We study the developed metrics
as functions of the lowest threshold energy.
  Results: Density imaging performance decreases monotonically as a function of
the lowest threshold in both projection and image domains. Spectral imaging
performance has a plateau between 0 and 10 keV and decreases monotonically
thereafter, in both projection and image domain.
  Conclusions: Compton interactions contribute significantly to the density
imaging performance of edge-on-irradiated silicon detectors. With the studied
detector topology, the benefit of counting primary Compton interactions
outweighs the penalty of multiple counting at all lower threshold energies.
Compton interactions also contribute significantly to the spectral imaging
performance for measured energies above 10 keV.
