  It is believed that nanostructuring is an effective way to achieve excellent
thermoelectric performance. In the work, by combining the first-principles
calculations and semiclassical Boltzmann transport theory, we investigate the
thermoelectric properties of bulk and monolayer BiTeBr including both the
electron and phonon transports. The generalized gradient approximation (GGA)
plus spin-orbit coupling (SOC) is employed for the electron part, and GGA for
the phonon part. It is found that SOC has important effects on electronic
transport coefficients because of SOC-induced obvious influences on energy band
structures. In p-type doping, monolayer has larger Seebeck coefficient than
bulk in wide doping range, which is beneficial to excellent thermoelectric
performance. The calculated average lattice thermal conductivity of bulk is
1.71 $\mathrm{W m^{-1} K^{-1}}$ at room temperature, which is close to
experimental value 1.3 $\mathrm{W m^{-1} K^{-1}}$. Calculated results show that
monolayer has better $ZT_e$ and lower lattice thermal conductivity than bulk,
which suggests that monolayer has better thermoelectric performance than bulk.
The lower lattice thermal conductivity in monolayer than bulk is due to shorter
phonon lifetimes. By comparing the experimental electrical conductivity of bulk
with calculated value, the scattering time is determined for 3.3 $\times$
$10^{-14}$ s. Based on electron and phonon transport coefficients, the
thermoelectric figure of merit $ZT$ of bulk and monolayer are calculated. It is
found that monolayer has higher peak $ZT$ than bulk, and the peak $ZT$ of
monolayer can be as high as 0.55 in n-type doping and 0.75 in p-type doping at
room temperature. These results imply that monolayer BiTeBr may be a potential
two-dimensional (2D) thermoelectric material, which can stimulate further
experimental works to synthesize monolayer BiTeBr.
