  Recent experiments show that the islanding behavior during chemical vapor
deposition (CVD) of Si on Si(111) using disilane (Si${_2}$H${_6}$) is quite
different from that due to molecular beam epitaxy (MBE). While the latter can
be understood using rate equation theories (RET), the islanding exponent
(connecting the power law growth of island density with growth rate) obtained
for the CVD growth is a puzzle, with the CVD exponent being almost twice the
MBE exponent. We carry out (2+1) dimensional kinetic Monte Carlo(MC)
simulations to study this CVD growth. Hydrogen plays a critical role during
growth. Disilane breaks up into hydrides on the Si surface. We use MC
simulations to explore a number of cases involving one or two migrating species
and show that the large islanding exponent is probably due to the presence of
two hydrides, one of which has a much shorter lifetime than the other. We
modify RET taking this possibility into account in order to shed light on the
experimental observation. We calculate the scaling properties of the island
distributions using MC simulations and the modified RET, and conclude that the
large effective CVD exponents arise from the failure of the simple island
number scaling scenario which no longer applies to the two-component situation
prevailing under CVD growth conditions.
