  The mechanism of ballas like nano crystalline diamond formation (NCD) still
remains elusive, and this work attempts to analyze its formation in the
framework of activation energy ($E_\text{a}$) of NCD films grown from
H$_\text{2}$/CH$_\text{4}$ plasma in a 2.45 GHz chemical vapor deposition
system. The $E_\text{a}$ is calculated using the Arrhenius equation
corresponding to the thickness growth rate while using substrate temperature
($\sim1000-1300$ K) in all the calculations. While the calculated values match
with the $E_\text{a}$ for nano diamond formation throughout the literature,
these values of $\sim$10 kcal/mol are lower compared to $\sim$15 -- 25 kcal/mol
for standard single crystal diamond (SCD) formation, concluding thus far, that
the energetics and processes involved are different. In this work, To further
investigate this, the substrate preparation and sample collection method are
modified while keeping the growth parameters constant. Unseeded Si substrates
are physically separated from the plasma discharge by a molybdenum plate with a
pinhole drilled in it. Small quantities of a sample substance are collected on
the substrates. The sample is characterized by electron microscopy and Raman
spectroscopy confirming it to be nano diamond, thus, suggesting that nano
diamond self nucleates in the plasma and flows to the substrate which acts as a
mere collection plate. It is hypothesized then, if nano diamond nucleates in
gas phase, gas temperature has to be used in the Arrhenius analysis. The
$E_\text{a}$ values for all the nano diamond films are re-calculated using the
simulated gas temperature ($\sim1500-2000$ K) obtained from a simple
H$_\text{2}$/CH$_\text{4}$ plasma model, giving values within the range
characteristic to SCD formation. A unified growth mechanism for NCD and SCD is
proposed concluding that the limiting reactions for NCD and SCD formation are
the same.
