  High radiative efficiency in moderately doped n-InP results in the transport
of holes dominated by photon-assisted hopping, when radiative hole
recombination at one spot produces a photon, whose interband absorption
generates another hole, possibly far away. Due to "heavy tails" in the hop
probability, this is a random walk with divergent diffusivity (process known as
the Levy flight). Our key evidence is derived from the ratio of transmitted and
reflected luminescence spectra, measured in samples of different thicknesses.
These experiments prove the non-exponential decay of the hole concentration
from the initial photo-excitation spot. The power-law decay, characteristic of
Levy flights, is steep enough at short distances (steeper than an exponent) to
fit the data for thin samples and slow enough at large distances to account for
thick samples. The high radiative efficiency makes possible a semiconductor
scintillator with efficient photon collection. It is rather unusual that the
material is "opaque" at wavelengths of its own scintillation. Nevertheless,
after repeated recycling most photons find their way to one of two photodiodes
integrated on both sides of the semiconductor slab. We present an analytical
model of photon collection in two-sided slab, which shows that the heavy tails
of Levy-flight transport lead to near-ideal characteristics. Finally, we
discuss a possibility to increase the slab thickness while still quantifying
the deposited energy and the interaction position within the slab. The idea is
to use a layered semiconductor with photon-assisted collection of holes in
narrow-bandgap layers spaced by distances far exceeding diffusion length. Holes
collected in these radiative layers emit longwave radiation, to which the
entire structure is transparent. Nearly-ideal calculated characteristics of a
mm-thick layered scintillator can be scaled up to several centimeters.
