  Self-sustained time-dependent current oscillations under dc voltage bias have
been observed in recent experiments on n-doped semiconductor superlattices with
sequential resonant tunneling. The current oscillations are caused by the
motion and recycling of the domain wall separating low- and high-electric-
field regions of the superlattice, as the analysis of a discrete drift model
shows and experimental evidence supports. Numerical simulation shows that
different nonlinear dynamical regimes of the domain wall appear when an
external microwave signal is superimposed on the dc bias and its driving
frequency and driving amplitude vary. On the frequency - amplitude parameter
plane, there are regions of entrainment and quasiperiodicity forming Arnol'd
tongues. Chaos is demonstrated to appear at the boundaries of the tongues and
in the regions where they overlap. Coexistence of up to four electric-field
domains randomly nucleated in space is detected under ac+dc driving.
