  Atomistic modeling of energetic disorder in organic semiconductors (OSCs) and
its effects on the optoelectronic properties of OSCs requires a large number of
excited-state electronic-structure calculations, a computationally daunting
task for many OSC applications. In this work, we advocate the use of deep
learning to address this challenge and demonstrate that state-of-the-art deep
neural networks (DNNs) are capable of predicting the electronic properties of
OSCs at an accuracy comparable with the quantum chemistry methods used for
generating training data. We extensively investigate the performances of four
recent DNNs (deep tensor neural network, SchNet, message passing neural
network, and multilevel graph convolutional neural network) in predicting
various electronic properties of an important class of OSCs, i.e.,
oligothiophenes (OTs), including their HOMO and LUMO energies, excited-state
energies and associated transition dipole moments. We find that SchNet shows
the best performance for OTs of different sizes (from bithiophene to
sexithiophene), achieving average prediction errors in the range of 20-80meV
compared to the results from (time-dependent) density functional theory. We
show that SchNet also consistently outperforms shallow feed-forward neural
networks, especially in difficult cases with large molecules or limited
training data. We further show that SchNet could predict the transition dipole
moment accurately, a task previously known to be difficult for feed-forward
neural networks, and we ascribe the relatively large errors in transition
dipole prediction seen for some OT configurations to the charge-transfer
character of their excited states. Finally, we demonstrate the effectiveness of
SchNet by modeling the UV-Vis absorption spectra of OTs in dichloromethane and
a good agreement is observed between the calculated and experimental spectra.
