  Electro-optic (EO) modulators rely on interaction of optical and electrical
signals with second-order nonlinear media. For the optical signal, this
interaction can be strongly enhanced by using dielectric slot-waveguide
structures that exploit a field discontinuity at the interface between a
high-index waveguide core and the low-index EO cladding. In contrast to this,
the electrical signal is usually applied through conductive regions in the
direct vicinity of the optical waveguide. To avoid excessive optical loss, the
conductivity of these regions is maintained at a moderate level, thus leading
to inherent RC-limitations of the modulation bandwidth. In this paper, we show
that these limitations can be overcome by extending the slot-waveguide concept
to the modulating radio-frequency (RF) signal. Our device combines an RF
slotline that relies on BaTiO3 as a high-k dielectric material with a
conventional silicon photonic slot waveguide and a highly efficient organic EO
cladding material. In a proof-of-concept experiment, we demonstrate a 1 mm-long
Mach-Zehnder modulator that offers a 3 dB-bandwidth of 76 GHz and a 6
dB-bandwidth of 110 GHz along with a small {\pi}-voltage of 1.3 V (U{\pi}L =
1.3 V mm). To the best of our knowledge, this represents the largest EO
bandwidth so far achieved with a silicon photonic modulator based on dielectric
waveguides. We further demonstrate the viability of the device in a data
transmission experiment using four-state pulse-amplitude modulation (PAM4) at
line rates up to 200 Gbit/s. Our first-generation devices leave vast room for
further improvement and may open an attractive route towards highly efficient
silicon photonic modulators that combine sub-1 mm device lengths with sub-1 V
drive voltages and modulation bandwidths of more than 100 GHz.
