  Sputter thin film deposition after photolithography often produces unwanted
spikes along the side edges. These spikes are a significant issue for the
development of magnetic tunnel junction (MTJ)-based memory and molecular
spintronics devices, microelectronics, and micro-electro-mechanical systems
because they influence the properties of the other films deposited on the top.
Our molecular spintronics devices that utilize MTJ as the testbed are almost
short-lived and encountered high background current that masked the effect of
molecular transport channels placed along the sides of MTJs. Therefore, tapered
thin film edges are critically needed in devices. Here, we report a very
cost-efficient and fast way of creating an optimum photoresist profile for the
production of spike-free patterned films. This approach is based on performing
a soaking in the photoresist developer after baking and before the UV exposure.
However, the success of this method depends on multiple factors accounted for
during photolithography - photoresist thickness (spin speed), baking
temperature, soaking time and exposure time. Our recent experiments
systematically studied the effect of these factors by following the L9
experimental scheme of the Taguchi Design of the experiment (TDOE). We
discovered that baking temperature was the most influential parameter; presoak
time and photoresist thickness were two other influential factors; exposure
time was the least effective factor. We also found that 4000 rpm, 100 C soft
baking, 60 s soaking, and 15 s UV exposure yielded the best results. Finally,
the paper also discusses the interdependence of selected factors, and the
impact of the individual levels of each factor. This study is expected to
benefit MEMS and micro/nanoelectronics device researchers because it attempts
at finding a cheaper and faster alternative to creating an optimum photoresist
profile.
