  The carbon vacancy in $4H$-SiC is a powerful minority carrier recombination
center and a major cause of degradation of SiC-based devices. Despite the
extensiveness of the literature regarding the characterization and modeling of
the defect, many fundamental questions persist. Among them we have the shaky
connection of the EPR data to the electrical measurements, the physical origin
of the pseudo-Jahn-Teller (pJT) effect, the reasoning for the observed
sub-lattice dependence of the paramagnetic states, and the severe
temperature-dependence of some hyperfine signals which cannot be accounted for
by a thermally-activated dynamic averaging between equivalent JT-distorted
structures. In this work we address these problems by means of semi-local and
hybrid density functional calculations. We start by inventorying a total of
four vacancy structures. Diamagnetic states have well defined low-energy
structures, whereas paramagnetic states display metastability. This rich
structural variety is traced back to the filling of electronic states which are
shaped by a crystal-field-dependent pJT effect. From calculated minimum energy
paths for defect rotation and transformation mechanisms, combined with the
calculated formation energies and electrical levels, we arrived at a
configuration-coordinate diagram of the defect. The diagram provides us with a
detailed first-principles picture of the defect when subject to optical and
thermal excitations. The calculated acceptor and donor transitions agree well
with Z$_{1/2}$ and EH$_{6/7}$ trap energies, respectively. From comparison of
calculated and measured $U$-values, and correlating the site-dependent
formation energies with the relative intensity of the DLTS peaks in as-grown
material, we assign Z$_{1}$ (EH$_{6}$) and Z$_{2}$ (EH$_{7}$) signals to
acceptor (donor) transitions of carbon vacancies located on the $h$ and $k$
sub-lattice sites, respectively.
