  Diamond is a promising material for the development of emerging applications
in quantum optics, quantum information and quantum sensing. The fabrication and
characterization of novel luminescent defects with suitable opto-physical
properties is therefore of primary importance for further advances in these
research fields. In this work we report on the investigation in the formation
of photoluminescent (PL) defects upon MeV He implantation in diamond. Such
color centers, previously reported only in electroluminescence and
cathodoluminescence regime, exhibited two sharp emission lines at 536.5 nm and
560.5 nm, without significant phonon sidebands. A strong correlation between
the PL intensities of the above-mentioned emission lines and the He
implantation fluence was found in the 10^15-10^17 cm^{-2} fluence range. The PL
emission features were not detected in control samples, i.e. samples that were
either unirradiated or irradiated with different ion species (H, C). Moreover,
the PL emission lines disappeared in samples that were He-implanted above the
graphitization threshold. Therefore, the PL features are attributed to
optically active defects in the diamond matrix associated with He impurities.
The intensity of the 536.5 nm and 560.5 nm emission lines was investigated as a
function of the annealing temperature of the diamond substrate. The emission
was observed upon annealing at temperatures higher than 500{\deg}C, at the
expenses of the concurrently decreasing neutral-vacancy-related GR1 emission
intensity. Therefore, our findings indicate that the luminescence originates
from the formation of a stable lattice defect. Finally, the emission was
investigated under different laser excitations wavelengths (i.e. 532 nm and 405
nm) with the purpose of gaining a preliminary insight about the position of the
related levels in the energy gap of diamond.
