  Experimental and theoretical work on the ionization of deep impurity centers
in the alternating terahertz field of high-intensity far-infrared laser
radiation, with photon energies tens of times lower than the impurity
ionization energy, is reviewed. It is shown that impurity ionization is due to
phonon-assisted tunneling which proceeds at high electric field strengths into
direct tunneling without involving phonons. In the quasi-static regime of low
frequencies the tunneling probability is independent on frequency. Carrier
emission is accomplished by defect tunneling in configuration space and
electron tunneling through the potential well formed by the attractive force of
the impurity and the externally applied electric field. The dependence of the
ionization probability on the electric field strength permits to determine
defect tunneling times, the structure of the adiabatic potentials of the
defect, and the Huang-Rhys parameters of electron-phonon interaction. Raising
the frequency leads to an enhancement of tunneling ionization and the tunneling
probability gets frequency dependent. The transition from the frequency
independent quasi-static limit to frequency dependent tunneling is determined
by the tunneling time which is in the case of phonon asissted tunneling
controlled by the temperature. This transition to the high-frequency limit
represents the boundary between semiclassical physics, where the radiation
field has a classical amplitude, and full quantum mechanics where the radiation
field is quantized and impurity ionization is caused by multi-photon processes.
