  The quaternary arsenide compounds XCuYAs (X=Zr, Hf; Y= Si, Ge) belong to the
vast family of the 1111-type quaternary compounds, which possess outstanding
physical properties ranging from $p$-type transparent semiconductors to
high-temperature Fe-based superconductors. In this paper, we study the
electronic structure topology, spin Hall effect (SHE) and spin Nernst effect
(SNE) in these compounds based on density functional theory calculations. First
we find that the four considered compounds are Dirac semimetals with the
nonsymmorphic symmetry-protected Dirac line nodes along the Brillouin zone
boundary $A$-$M$ and $X$-$R$ and low density of states (DOS) near the Fermi
level ($E_F$). Second, the intrinsic SHE and SNE in some of these considered
compounds are found to be large. In particular, the calculated spin Hall
conductivity (SHC) of HfCuGeAs is as large as -514 ($\hbar$/e)(S/cm). The spin
Nernst conductivity (SNC) of HfCuGeAs at room temperature is also large, being
-0.73 ($\hbar$/e)(A/m-K). Moreover, both the magnitude and sign of the SHC and
SNC in these compounds can be manipulated by varying either the applied
electric field direction or spin current direction. The SHE and SNE in these
compounds can also be enhanced by tuning the Fermi level via chemical doping or
electric gating. Finally, a detailed analysis of the band-decomposed and
$k$-resolved spin Berry curvatures reveals that these large SHC and SNC as well
as their notable tunabilities originate largely from the presence of a large
number of spin-orbit coupling-gapped Dirac points near the Fermi level as well
as the gapless Dirac line-nodes, which give rise to large spin Berry
curvatures. Our findings thus suggest that the four XCuYAs compounds not only
provide a valuable platform for exploring the interplay between SHE, SNE and
band topology but also have promising applications in spintronics and spin
caloritronics.
