  Inter-valley interference between degenerate conduction band minima has been
shown to lead to oscillations in the exchange energy between neighbouring
phosphorus donor electron states in silicon \cite{Koiller02,Koiller02A}. These
same effects lead to an extreme sensitivity of the exchange energy on the
relative orientation of the donor atoms, an issue of crucial importance in the
construction silicon-based spin quantum computers. In this article we calculate
the donor electron exchange coupling as a function of donor position
incorporating the full Bloch structure of the Kohn-Luttinger electron
wavefunctions. It is found that due to the rapidly oscillating nature of the
terms they produce, the periodic part of the Bloch functions can be safely
ignored in the Heitler-London integrals as was done by Koiller et. al. [Phys.
Rev. Lett. 88,027903(2002),Phys. Rev. B. 66,115201(2002)], significantly
reducing the complexity of calculations.
  We address issues of fabrication and calculate the expected exchange coupling
between neighbouring donors that have been implanted into the silicon substrate
using an 15keV ion beam in the so-called 'top down' fabrication scheme for a
Kane solid-state quantum computer. In addition we calculate the exchange
coupling as a function of the voltage bias on control gates used to manipulate
the electron wavefunctions and implement quantum logic operations in the Kane
proposal, and find that these gate biases can be used to both increase and
decrease the magnitude of the exchange coupling between neighbouring donor
electrons. The zero-bias results reconfirm those previously obtained by
Koiller.
