  In this Thesis, a study of the electronic structure of two Ti-based oxide
systems, TiO2 thin films and the ultra-thin LaAlO3-SrTiO3 (LAO-STO)
heterojunctions, is given. A weak room-temperature ferromagnetism (FM) has been
detected in slightly reduced TiO2 thin film and in other oxides; as these
materials are insulating closed-shell systems, this phenomenon has been
classified as "d0 magnetism". Since this magnetism could be related to the
growth process and to the presence of defects (oxygen vacancies, VO), an
analysis of Ti electronic states (especially of Ti3+ energy levels) is
mandatory. The first part of this work is devoted to the magnetic
characterization of a set of TiO2 and N-doped TiO2 samples, together with the
analysis of Ti 3d-related states carried out with X-ray photoemission (XPS) and
resonant photoemission (ResPES). The hypothesis of clustered VO as the source
of FM is then discussed in the light of the experimental and theoretical
results. Another interesting oxide system in which the stoichiometry of Ti ions
play a fundamental role is the LAO-STO interface. In fact, while LAO and STO
separately are two band insulators, the interface created by growing LAO on the
top of STO (001) has found to become metallic, hosting a 2D electron gas. The
second part of this Thesis is devoted to the study of conductive and insulating
LAO-STO interfaces, carried out by XPS, X-ray absorption (XAS) and with ResPES.
The sample stoichiometry is evaluated through a comparison with LAO and STO
single crystals. A resonance enhancement of the conductive Ti states,
associated to Ti3+ ions, is reported and compared to theoretical calculations.
On the basis of these results, the origin of metallic states in ultra-thin
LAO-STO interfaces is properly addressed. In addition, a characterization of
the structural disorder at the interface is shown, carried out with
angle-resolved XPS.
