  Recently, the two dimensional complex MA$_2$Z$_4$ structures have been
suggested as suitable replacements for silicon channels in field-effect
transistors (FETs). Specifically, two materials of MoSi$_2$N$_4$ and
WSi$_2$N$_4$ due to their very desirable electrical and thermal properties are
noticed. On the other hand, the reliability of transistors, which is determined
by the maximum temperature they obtain during the performance, specifies the
usefulness of the newly proposed channels for thermal management solution. In
this work, the FETs, including MoSi$_2$N$_4$ and WSi$_2$N$_4$ channels, are
investigated using Monte Carlo simulation of the phonon Boltzmann equation. In
particular, the phonon analysis has been carried out to investigate the peak
temperature rise. Our calculations confirm that MoSi$_2$N$_4$ and WSi$_2$N$_4$
present lower maximum temperature than the previously suggested candidate, the
blue phosphorene (BP) which itself reaches a shallow temperature. Concretely,
the phonon exploration shows that the competition between the dominant heat
carrier velocity, and its related frequency settles the maximum temperature
value. The material WSi$_2$N$_4$ with much more phonons in TA mode, with almost
high velocity and relatively low-frequency, shows adequate thermal condition,
and its peak temperature is very low, say 110 K, less than that of BP. The
material MoSi$_2$N$_4$ attains the maximum temperature of only 10 K less than
BP peak temperature. This behavior attributes to the dominant LA phonons which
are fast but also have high frequency and consequently make the temperature get
larger than that of the WSi$_2$N$_4$. In summary, WSi$_2$N$_4$, with very low
peak temperature, and in the next step MoSi$_2$N$_4$, both with beneficial
electrical/thermal properties, are suggested as very suitable candidates for
producing more reliable FETs, fulfilling the thermal management.
