  In this paper, we study the well-posedness/ill-posedness and regularity of
stationary solutions to the hydrodynamic model of semiconductors represented by
Euler-Poisson equations with sonic boundary. When the doping profile is
subsonic, we prove that, the steady-state equations with sonic boundary possess
a unique interior subsonic solution, and at least one interior supersonic
solution, and if the relaxation time is large and the doping profile is a small
perturbation of constant, then the equations admit infinitely many transonic
shock solutions, while, if the relaxation time is small enough and the doping
profile is a subsonic constant, then the equations admits infinitely many $C^1$
smooth transonic solutions, and no transonic shock solution exists. When the
doping profile is supersonic, we show that the system does not hold any
subsonic solution, furthermore, the system doesn't admit any supersonic
solution or any transonic solution if such a supersonic doping profile is small
or the relaxation time is small, but it has at least one supersonic solution
and infinitely many transonic solutions if the supersonic doping profile is
close to the sonic line and the relaxation time is large. The interior
subsonic/supersonic solutions all are global $C^{\frac{1}{2}}$
H\"older-continuous, and the exponent $\frac{1}{2}$ is optimal. The
non-existence of any type solutions in the case of small doping profile or
small relaxation time indicates that the semiconductor effect for the system is
remarkable and cannot be ignored. The proof for the existence of
subsonic/supersonic solutions is the technical compactness analysis combining
the energy method and the phase-plane analysis, while the approach for the
existence of multiple transonic solutions is artfully constructed. The results
obtained significantly improve and develop the existing studies.
