  III-V semiconductor-based photoelectrochemical (PEC) devices show the highest
solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a
relevant top photoabsorber layer or a charge-selective contact in PEC for
integrated and direct solar fuel production, due to its tunable lattice
constant, electronic band structure, and favorable optical properties. To
enhance the stability of its surface against chemical corrosion which leads to
decomposition, we deposit a GaN protection and passivation layer. The n-doped
GaInP(100) epitaxial layers were grown by metalorganic chemical vapor
deposition on top of GaAs(100) substrate. Subsequently, thin 1-20 nm GaN films
were grown on top of the oxidized GaInP surfaces by atomic layer deposition. We
studied the band alignment of these multi-junction heterostructures by X-ray
and ultraviolet photoelectron spectroscopy. Due to the limited emission depth
of photoelectrons, we determined the band alignment by a series of separate
measurements in which we either modified the GaInP(100) surface termination or
the film thickness of the grown GaN on GaInP(100) buffer layers. On
n-GaInP(100) surfaces prepared with the well-known phosphorus-rich (2x2)/c(4x2)
reconstruction we found up-ward surface band bending (BB) of 0.34 eV, and Fermi
level pinning due to the present surface states. Upon oxidation, the surface
states are partially passivated resulting in a reduction of BB to 0.12 eV and a
valence band offset (VBO) between GaInP and oxide bands of 2.0 eV. Between the
GaInP(100) buffer layer and the GaN passivation layer, we identified a VBO of
1.8 eV. The corresponding conduction band offset of -0.2 eV is found to be
rather small. Therefore, we evaluate the application of the GaN passivation
layer as a promising technological step not only to reduce surface states but
also to increase the stability of the surfaces of photoelectrochemical devices.
