  The discovery of magnetism in two-dimensional (2D) van der Waals (vdW)
materials has flourished a new endeavour of fundamental problems in magnetism
as well as potential applications in computing, sensing and storage
technologies. Of particular interest are antiferromagnets, which due to their
intrinsic antiferromagnetic exchange coupling show several advantages in
relation to ferromagnets such as robustness against external magnetic
perturbations. This property is one of the cornerstones of antiferromagnets and
implies that information stored in antiferromagnetic domains is invisible to
applied magnetic fields preventing it from being erased or manipulated. Here we
show that, despite this fundamental understanding, the magnetic domains of
recently discovered vdW MnPS3 antiferromagnet can be controlled via external
magnetic fields and currents. We realize ultrafast domain-wall dynamics with
velocities up to 1500 m/s and 3000 m/s respectively to a broad range of fields
and current densities. Both domain wall dynamics are determined by the edge
terminations which generated uncompensated spins following the underlying
symmetry of the honeycomb structure. We find that edge atoms belonging to
different magnetic sublattices function as geometrical constrictions preventing
the displacement of the wall, whereas having atoms of the same sublattice at
both edges of the material allows for the field-driven domain wall motion which
is only limited by the spin-flop transition of the antiferromagnet beyond 25 T.
Conversely, electric currents can induce motion of domain walls in most of the
edges except those where the two sublattices are present at the borders (e.g.
armchair edges). Our results indicate that the implementation of 2D vdW
antiferromagnets in real applications requires the engineering of the layer
edges which enables an unprecedented functional feature in ultrathin device
platforms.
