  We study theoretically magnetoresistance (MR) of graphene with different
types of disorder. For short-range disorder, the key parameter determining
magnetotransport properties---a product of the cyclotron frequency and
scattering time---depends in graphene not only on magnetic field $H$ but also
on the electron energy $\varepsilon$. As a result, a strong, square-root in
$H$, MR arises already within the Drude-Boltzmann approach. The MR is
particularly pronounced near the Dirac point. Furthermore, for the same reason,
"quantum" (separated Landau levels) and "classical" (overlapping Landau levels)
regimes may coexist in the same sample at fixed $H.$ We calculate the
conductivity tensor within the self-consistent Born approximation for the case
of relatively high temperature, when Shubnikov-de Haas oscillations are
suppressed by thermal averaging. We predict a square-root MR both at very low
and at very high $H:$ $[\varrho_{xx}(H)-\varrho_{xx}(0)]/\varrho_{xx}(0)\approx
C \sqrt{H},$ where $C$ is a temperature-dependent factor, different in the low-
and strong-field limits and containing both "quantum" and "classical"
contributions. We also find a nonmonotonic dependence of the Hall coefficient
both on magnetic field and on the electron concentration. In the case of
screened charged impurities, we predict a strong temperature-independent MR
near the Dirac point. Further, we discuss the competition between disorder- and
collision-dominated mechanisms of the MR. In particular, we find that the
square-root MR is always established for graphene with charged impurities in a
generic gated setup at low temperature.
