  Terbium doped silicon oxynitride host matrix is suitable for various
applications such as light emitters compatible with CMOS technology or
frequency converter systems for photovoltaic cells. In this study, amorphous
Tb3+ ion doped nitrogen-rich silicon oxynitride (NRSON) thin films were
fabricated using a reactive magnetron co-sputtering method, with various N2
flows and annealing conditions, in order to study their structural and emission
properties. Rutherford backscattering (RBS) measurements and refractive index
values confirmed the silicon oxynitride nature of the films. An electron
microscopy analysis conducted for different annealing temperatures (T A) was
also performed up to 1200 {\textdegree}C. Transmission electron microscopy
(TEM) images revealed two different sublayers. The top layer showed porosities
coming from a degassing of oxygen during deposition and annealing, while in the
region close to the substrate, a multilayer-like structure of SiO2 and Si3N4
phases appeared, involving a spinodal decomposition. Upon a 1200 {\textdegree}C
annealing treatment, a significant density of Tb clusters was detected,
indicating a higher thermal threshold of rare earth (RE) clusterization in
comparison to the silicon oxide matrix. With an opposite variation of the N2
flow during the deposition, the nitrogen excess parameter (Nex) estimated by
RBS measurements was introduced to investigate the Fourier transform infrared
(FTIR) spectrum behavior and emission properties. Different vibration modes of
the Si--N and Si--O bonds have been carefully identified from the FTIR spectra
characterizing such host matrices, especially the 'out-of-phase' stretching
vibration mode of the Si--O bond. The highest Tb3+ photoluminescence (PL)
intensity was obtained by optimizing the N incorporation and the annealing
conditions. In addition, according to these conditions, the integrated PL
intensity variation confirmed that the silicon nitride-based host matrix had a
higher thermal threshold of rare earth clusterization than its silicon oxide
counterpart. Analysis of time-resolved PL intensity versus T A showed the
impact of Tb clustering on decay times, in agreement with the TEM observations.
Finally, PL and PL excitation (PLE) experiments and comparison of the related
spectra between undoped and Tb-doped samples were carried out to investigate
the impact of the band tails on the excitation mechanism of Tb3+ ions.
