  Heat transport at nanoscales in semiconductors is investigated with a
statistical method. The Boltzmann Transport Equation (BTE) which characterize
phonons motion and interaction within the crystal lattice has been simulated
with a Monte Carlo technique. Our model takes into account media frequency
properties through the dispersion curves for longitudinal and transverse
acoustic branches. The BTE collisional term involving phonons scattering
processes is simulated with the Relaxation Times Approximation theory. A new
distribution function accounting for the collisional processes has been
developed in order to respect energy conservation during phonons scattering
events. This non deterministic approach provides satisfactory results in what
concerns phonons transport in both ballistic and diffusion regimes. The
simulation code has been tested with silicon and germanium thin films;
temperature propagation within samples is presented and compared to analytical
solutions (in the diffusion regime). The two materials bulk thermal
conductivity is retrieved for temperature ranging between 100 K and 500 K. Heat
transfer within a plane wall with a large thermal gradient (250 K-500 K) is
proposed in order to expose the model ability to simulate conductivity thermal
dependence on heat exchange at nanoscales. Finally, size effects and validity
of heat conduction law are investigated for several slab thicknesses.
