  In capacitively coupled radio frequency (CCRF) discharges, the interaction of
the plasma and the surface boundaries is linked to a variety of highly relevant
phenomena for technological processes. One possible plasma-surface interaction
is the generation of secondary electrons (SEs), which significantly influence
the discharge when accelerated in the sheath electric field. However, SEs, in
particular electron-induced SEs ($\updelta$-electrons), are frequently
neglected in theory and simulations. Due to the relatively high threshold
energy for the effective generation of $\updelta$-electrons at surfaces, their
dynamics are closely connected and entangled with the dynamics of the
ion-induced SEs ($\upgamma$-electrons). Thus, a fundamental understanding of
the electron dynamics has to be achieved on a nanosecond timescale, and the
effects of the different electron groups have to be segregated. This work
utilizes $1d3v$ Particle-in-Cell/Monte Carlo Collisions (PIC/MCC) simulations
of a symmetric discharge in the low-pressure regime ($p\,=\, 1\,\rm{Pa}$) with
the inclusion of realistic electron-surface interactions for silicon dioxide. A
diagnostic framework is introduced that segregates the electrons into three
groups ("bulk-electrons", "$\upgamma$-electrons", and "$\updelta$-electrons")
in order to analyze and discuss their dynamics. A variation of the electrode
gap size $L_\mathrm{gap}$ is then presented as a control tool to alter the
dynamics of the discharge significantly. It is demonstrated that this control
results in two different regimes of low and high plasma density, respectively.
The fundamental electron dynamics of both regimes are explained, which requires
a complete analysis starting at global parameters (e.g., densities) down to
single electron trajectories.
