  Electronic devices are progressively fabricated on flexible substrates
allowing new fields of applications. A maskless and very flexible structuring
process is offered by ablation using ultra-short pulse laser irradiation.
Usually, certain areas of a functional thin film coating are locally removed to
yield the needed device structures. Micro laser patterning quality is not only
influenced by the beam properties (beam profile, fluence) but also by pulse
overlap, scan repetitions and many other factors such as substrate and coating
material. This makes process parameter optimization a challenging task. In this
paper, we present a systematic approach to efficiently find suitable parameters
for laser-induced ablation of thin films on susceptible polymer substrates. As
an example, we use a sputtered NiCr coating with a thickness of 100 $nm$ on a
polyimide film made by spin coating of PI-2611 precursor (@ 2000 $rpm$ > ca. 8
${\mu}m$, HD microsystems). Irradiation is conducted using a fs-laser with
infrared wavelength of 1030 $nm$ and a pulse length of 212 $fs$. The energy per
pulse is varied in the range of 0,29 ${\mu}J$ to 4,83 ${\mu}J$, yielding
fluence values between 70 $mJ/cm^2$ and 1,11 $J/cm^2$. Ablation threshold
fluence for a 100 $nm$ layer of NiCr was found to be ${\phi}_{th}$
($N_P$:1)=0,50 $J/cm^2$ and the incubation factor was evaluated to be
${\xi}$=0,53. A clear distinction must be made between the material ablation at
the surface of a bulk material and the selective removal of a thin film. In the
second case effects such as flaking occur in practice and influence the
ablation characteristic. We then investigate different varieties of thin film
removal including dot-, line- and areal-ablation. The methodology is presented
using a practical example, but can be applied to selective ablation of a wide
range of thin film systems.
