  High Q optical resonators are a key component for ultra-narrow linewidth
lasers, frequency stabilization, precision spectroscopy and quantum
applications. Integration of these resonators in a photonic waveguide
wafer-scale platform is key to reducing their cost, size and power as well as
sensitivity to environmental disturbances. However, to date, the intrinsic Q of
integrated all-waveguide resonators has been relegated to below 150 Million.
Here, we report an all-waveguide Si3N4 resonator with an intrinsic Q of 422
Million and a 3.4 Billion absorption loss limited Q. The resonator has a 453
kHz intrinsic linewidth and 906 kHz loaded linewidth, with a finesse of 3005.
The corresponding linear loss of 0.060 dB/m is the lowest reported to date for
an all-waveguide design with deposited upper cladding oxide. These are the
highest intrinsic and absorption loss limited Q factors and lowest linewidth
reported to date for a photonic integrated all-waveguide resonator. This level
of performance is achieved through a careful reduction of scattering and
absorption loss components. We quantify, simulate and measure the various loss
contributions including scattering and absorption including surface-state
dangling bonds that we believe are responsible in part for absorption. In
addition to the ultra-high Q and narrow linewidth, the resonator has a large
optical mode area and volume, both critical for ultra-low laser linewidths and
ultra-stable, ultra-low frequency noise reference cavities. These results
demonstrate the performance of bulk optic and etched resonators can be realized
in a photonic integrated solution, paving the way towards photonic integration
compatible Billion Q cavities for precision scientific systems and applications
such as nonlinear optics, atomic clocks, quantum photonics and high-capacity
fiber communications systems on-chip.
