  Bunching of steps at the surface of growing crystals can be induced by both
directions of the driving force: step up and step down. The processes happen in
different adatom concentrations and differ in character. In this study we show
how the overall picture of the bunching process depends on the strength of
short range step-step repulsion. The repulsive interaction between steps,
controlled by an additional parameter, is introduced into the recently studied
atomistic scale model of vicinal crystal growth, based on cellular automata. It
is shown that the repulsion modifies bunching process in a different way,
depending on the direction of the destabilizing force. In particular, bunch
profiles, stability diagrams and time-scaling dependences of various bunch
properties are affected when the step-step repulsion increases. The repulsion
between steps creates a competition between two characteristic sizes - bunch
width and macrostep height, playing the role of the second length scale that
describes the step bunching phenomenon. A new characteristic time scale
dependent on the step-step repulsion parameter emerges as an effect of
interplay between (01) faceted macrosteps and (11) faceted bunches. The bunch
height being the major characteristic size of the bunches is not influenced
dramatically by the repulsion.
