  Semiconductor superlattices have been extensively investigated for
thermoelectric applications, to explore the effects of compositions, interface
structures, and lattice strain environments on the reduction of thermal
conductivity, and improvement of efficiency. Most studies assumed that their
electronic properties remain unaffected compared to their bulk counterparts.
However, recent studies demonstrated that electronic properties of silicon
(Si)/germanium (Ge) superlattices show significant variations depending on
compositions and growth substrates. These studies used a constant relaxation
time approximation, and ignored the effects of electron scattering processes.
Here, we consider electron scattering with phonons and ionized impurities, and
report first-principles calculations of electronic transport properties
including the scattering rates. We investigate two classes of Si/Ge
superlattices: superlattices with varied compositions grown on identical
substrates and with identical compositions but grown on different substrates.
We illustrate the relationship between the energy bands of the superlattices
and the electron-phonon relaxation times. We model the electron-ionized
impurity interaction potentials by accounting for the in-plane and the
cross-plane structural anisotropy. Our analysis reveals that the inclusion of
electron-phonon and electron-impurity scattering processes can lead to
~1.56-fold improved peak power-factors, compared to that of bulk Si. We observe
that superlattices can also display dramatically reduced power-factors for
specific lattice strain environments. Such reduction could cancel out
thermoelectric efficiency improvements due to reduced thermal conductivities.
Our study provides insight to predict variation of electronic properties due to
changes in lattice strain environments, essential for designing superlattices
with optimized electronic properties.
