  Electromigration (EM) is a key reliability issue in deeply scaled technology
nodes. Traditional EM methods first filter immortal wires using the Blech
criterion, and then perform EM analysis based on Black's equation on the
remaining wires. The Blech criterion is based on finding the steady-state
stress in a two-terminal wire segment, but most on-chip structures are
considerably more complex. Current-density-based assessment methodologies,
i.e., Black's equation and the Blech criterion, which are predominantly used to
detect EM-susceptible wires, do not capture the physics of EM, but alternative
physics-based methods involve the solution of differential equations and are
slow. This paper uses first principles, based on solving fundamental stress
equations that relate electron wind and back-stress forces to the stress
evolution in an interconnect, and devises a technique that analyzes any general
tree or mesh interconnect structure to test for immortality. The resulting
solution is extremely computationally efficient and its computation time is
linear in the number of metal segments. Two variants of the method are
proposed: a current-density-based method that requires traversals of the
interconnect graph, and a voltage-based formulation negates the need for any
traversals. The methods are applied to large interconnect networks for
determining the steady-state stress at all nodes and test all segments of each
network for immortality. The proposed model is applied to a variety of tree and
mesh structures and is demonstrated to be fast. By construction, it is an exact
solution and it is demonstrated to match much more computationally expensive
numerical simulations.
