  High frequency signals propagate along the edges of conductors. If the
conductors are electroplated, then the seed layer forms at least one edge, so
care must be taken to insure the electrical quality of these layers. In this
work, we study the initial quality of SAM-based seed layers that are compatible
with complex surfaces including through-silicon vias (TSVs), as are used in
via-last three-dimensional semiconductor device packaging. The conformal and
electrical quality of the seed metal is very important. Also important for a
multifunction seed layer is its ability as a barrier layer, which protects the
substrate from high temperature diffusion of the deposited metal. Thus, the
barrier layer must be robust enough to withstand diffusion, yet thin enough to
provide a conformal surface that allows metal seed layer deposition. Standard
barrier layer deposition methods such as evaporation or sputtering require
either a line of sight from the source or aspect ratios large enough to provide
scattering from the background gas within the structure to coat all surfaces.
Electrochemical and chemical vapor deposition provide alternatives, but
concerns arise about contamination and compatibility with radio frequency or
high-speed digital signals. We propose a barrier layer based on an aromatic
self-assembled monolayer (SAM) for use in electroless copper seed layer
deposition. The viability of the SAM barrier layer is determined by the quality
of the deposited copper seed film, judged quantitatively by thin film
resistivity and qualitatively by surface adhesion and morphological properties
such as cracks and bubbles. Insights to the origins of problems and an optimal
scheme are described. Extensions for use as a photolithographic resist layer
are suggested. Our SAM approach for TSV applications yields a 'smart' seed
layer that can be used with a 'simple,' scalloped, easy to fabricate, via hole.
