  Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide
range of applications in scalable classical and quantum systems for computing
and sensing. A promising application of cryogenic PICs is to provide optical
interconnects by up-converting signals from electrical to optical domain,
allowing massive data-transfer from 4 K superconducting (SC) electronics to
room temperature environment. Such a solution is central to overcome the major
bottleneck in the scalability of cryogenic systems, which currently rely on
bulky copper cables that suffer from limited bandwidth, large heat load, and do
not show any scalability path. A key element for realizing a cryogenic-to-room
temperature optical interconnect is a high-speed electro-optic (EO) modulator
operating at 4 K with operation voltage at mV scale, compatible with SC
electronics. Although several cryogenic EO modulators have been demonstrated,
their driving voltages are significantly large compared to the mV scale voltage
required for SC circuits. Here, we demonstrate a cryogenic modulator with ~10
mV peak-to-peak driving voltage and gigabits/sec data rate, with ultra-low
electric and optical energy consumptions of ~10.4 atto-joules/bit and ~213
femto-joules/bit, respectively. We achieve this record performance by designing
a compact optical ring resonator modulator in a heterogeneous InP-on-Silicon
platform, where we optimize a multi-quantum well layer of InAIGaAs to achieve a
strong EO effect at 4 K. Unlike other semiconductors such as silicon, our
platform benefits from the high-carrier mobility and minimal free carrier
freezing of III-V compounds at low temperatures, with moderate doping level and
low loss (intrinsic resonator Q~272,000). These modulators can pave the path
for complex cryogenic photonic functionalities and massive data transmission
between cryogenic and room-temperature electronics.
