  Erbium-doped fiber lasers exhibit high coherence and low noise as required
for applications in fiber optic sensing, gyroscopes, LiDAR, and optical
frequency metrology. Endowing Erbium-based gain in photonic integrated circuits
can provide a basis for miniaturizing low-noise fiber lasers to chip-scale form
factor, and enable large-volume applications. Yet, while major progress has
been made in the last decade on integrated lasers based on silicon photonics
with III-V gain media, the integration of Erbium lasers on chip has been
compounded by large laser linewidth. Recent advances in photonic integrated
circuit-based high-power Erbium-doped amplifiers, make a new class of
rare-earth-ion-based lasers possible. Here, we demonstrate a fully integrated
chip-scale Erbium laser that achieves high power, narrow linewidth, frequency
agility, and the integration of a III-V pump laser. The laser circuit is based
on an Erbium-implanted ultralow-loss silicon nitride Si$_3$N$4$ photonic
integrated circuit. This device achieves single-mode lasing with a free-running
intrinsic linewidth of 50 Hz, a relative intensity noise of $<$-150 dBc/Hz at
$>$10 MHz offset, and output power up to 17 mW, approaching the performance of
fiber lasers and state-of-the-art semiconductor extended cavity lasers. An
intra-cavity microring-based Vernier filter enables wavelength tunability of
$>$ 40 nm within the C- and L-bands while attaining side mode suppression ratio
(SMSR) of $>$ 70 dB, surpassing legacy fiber lasers in tuning and SMRS
performance. This new class of low-noise, tuneable Erbium waveguide laser could
find applications in LiDAR, microwave photonics, optical frequency synthesis,
and free-space communications. Our approach is extendable to other wavelengths,
and more broadly, constitutes a novel way to photonic integrated circuit-based
rare-earth-ion-doped lasers.
