  The optical dielectric function of ZnGeN$_2$ is calculated from the interband
transitions using the energy bands calculated in the quasiparticle
self-consistent (QS)$G\hat W$ method using two different levels of
approximation: the independent particle approximation (IPA) and the
Bethe-Salpeter Equation (BSE) approach. The first allows us to relate peaks in
$\varepsilon_2(\omega)$ to specific bands and {\bf k}-points but does not
include excitonic effects, while the latter does. The corresponding changes in
the shape of $\varepsilon_2(\omega)$ are found to be similar to those in GaN.
The screened Coulomb interaction $\hat W$ is here calculated including
electron-hole interactions in the polarization function and gives a band
structure already going beyond the random phase approximation. The static
dielectric constants including only electronic screening, commonly referred to
as $\varepsilon^\infty$, were calculated separately by extrapolating the wave
vector dependent macroscopic $\varepsilon_M({\bf q},\omega=0)$ for ${\bf
q}\rightarrow0$. Below the quasiparticle gap, we find three bound excitons
optically active for different polarization. The convergence of these bound
excitons with respect to the density of the {\bf k}-mesh used in the BSE is
studied and found to require a fine mesh. It is also found that these bound
excitons originate from only the lowest conduction band and the top three
valence bands. To incorporate the lattice screening, we include a scaling
factor $(\varepsilon^\infty/\varepsilon^0)^2$, which allows us to obtain
exciton binding energies of the correct order of magnitude similar to those in
GaN. The excitons are related to each of the three fold split valence bands and
the splittings of the latter are also studied as function of strain. Finally, a
relation between the anisotropic effective masses and the valence band
splitting is pointed out and explained.
