  Low-loss photonic integrated circuits (PIC) and microresonators have enabled
novel applications ranging from narrow-linewidth lasers, microwave photonics,
to chip-scale optical frequency combs and quantum frequency conversion. To
translate these results into a widespread technology, attaining ultralow
optical losses with established foundry manufacturing is critical. Recent
advances in fabrication of integrated Si3N4 photonics have shown that
ultralow-loss, dispersion-engineered microresonators can be attained at
die-level throughput. For emerging nonlinear applications such as integrated
travelling-wave parametric amplifiers and mode-locked lasers, PICs of length
scales of up to a meter are required, placing stringent demands on yield and
performance that have not been met with current fabrication techniques. Here we
overcome these challenges and demonstrate a fabrication technology which meets
all these requirements on wafer-level yield, performance and length scale.
Photonic microresonators with a mean Q factor exceeding 30 million,
corresponding to a linear propagation loss of 1.0 dB/m, are obtained over full
4-inch wafers, as determined from a statistical analysis of tens of thousands
of optical resonances and cavity ringdown with 19 ns photon storage time. The
process operates over large areas with high yield, enabling 1-meter-long spiral
waveguides with 2.4 dB/m loss in dies of only 5x5 mm size. Using a modulation
response measurement self-calibrated via the Kerr nonlinearity, we reveal that,
strikingly, the intrinsic absorption-limited Q factor of our Si3N4
microresonators exceeds a billion. Transferring the present Si3N4 photonics
technology to standard commercial foundries, and merging it with silicon
photonics using heterogeneous integration technology, will significantly expand
the scope of today's integrated photonics and seed new applications.
