  Training deep neural networks (DNNs) is computationally intensive but arrays
of non-volatile memories like Charge Trap Flash (CTF) can accelerate DNN
operations using in-memory computing. Specifically, the Resistive Processing
Unit (RPU) architecture uses the voltage-threshold program by stochastic
encoded pulse trains and analog memory features to accelerate vector-vector
outer product and weight update for the gradient descent algorithms. Although
CTF, offering high precision, has been regarded as an excellent choice for
implementing RPU, the accumulation of charge due to the applied stochastic
pulse trains is ultimately of critical significance in determining the final
weight update. In this paper, we report the non-ideal program-time conservation
in CTF through pulsing input measurements. We experimentally measure the effect
of pulse width and pulse gap, keeping the total ON-time of the input pulse
train constant, and report three non-idealities: (1) Cumulative V_T shift
reduces when total ON-time is fragmented into a larger number of shorter
pulses, (2) Cumulative V_T shift drops abruptly for pulse widths < 2 {\mu}s,
(3) Cumulative V_T shift depends on the gap between consecutive pulses and the
V_T shift reduction gets recovered for smaller gaps. We present an explanation
based on a transient tunneling field enhancement due to blocking oxide
trap-charge dynamics to explain these non-idealities. Identifying and modeling
the responsible mechanisms and predicting their system-level effects during
learning is critical. This non-ideal accumulation is expected to affect
algorithms and architectures relying on devices for implementing mathematically
equivalent functions for in-memory computing-based acceleration.
