  Polarization-dependent scattering anisotropy of cylindrical nanowires has
numerous potential applications in, for example, nanoantennas, photothermal
therapy, thermophotovoltaics, catalysis, sensing, optical filters and switches.
In all these applications, temperature-dependent material properties play an
important role and often adversely impact performance depending on the
dominance of either radiative or dissipative damping. Here, we employ numerical
modeling based on Mie scattering theory to investigate and compare the
temperature and polarization-dependent optical anisotropy of metallic (gold,
Au) nanowires with indirect (silicon, Si) and direct (gallium arsenide, GaAs)
bandgap semiconducting nanowires. Results indicate that plasmonic scattering
resonances in semiconductors, within the absorption band, deteriorate with an
increase in temperature whereas those occurring away from the absorption band
strengthen as a result of the increase in phononic contribution.
Indirect-bandgap thin ($20 \,\mathrm{nm}$) Si nanowires present low absorption
efficiencies for both the transverse electric (TE, $E_{\perp}$) and magnetic
(TM, $E_{\parallel}$) modes, and high scattering efficiencies for the TM mode
at shorter wavelengths making them suitable as highly efficient scatterers.
Temperature-resilient higher-order anapole modes with their characteristic high
absorption and low scattering efficiencies are also observed in the
semiconductor nanowires ($r \! = \! 125 \! - \! 130$ nm) for the TE
polarization. Herein, the GaAs nanowires present $3 \! - \! 7$ times greater
absorption efficiencies compared to the Si nanowires making them especially
suitable for temperature-resilient applications such as scanning near-field
optical microscopy (SNOM), localized heating, non-invasive sensing or detection
that require strong localization of energy in the near field.
