  The goal of this work is a scientifically justified choice of efficient
technological parameters of anodic bonding of silicon to glass, ensuring a
minimum level of residual stresses. The relevance of this dissertation is
determined by the continuous efforts to reduce the negative effects of the
joint use of dissimilar materials in electronic devices. Theoretical and
practical results: the temperature dependence of the true values of the
coefficient of thermal expansion of popular glass brands in the temperature
range from minus 100 \deg C to 500 \deg C were obtained; the ratio of
thicknesses of silicon and glass that minimizes residual stress on the silicon
surface was calculated; the technique of minimizing the residual stresses in
silicon anodically bonded to glass was developed. Results of this research are
applicable to MEMS devices design and simulations.
  The first chapter provides the analysis of the current state of research in
the field of anodic bonding technology application.
  The second chapter is devoted to the experimental study of temperature
dependence of the linear thermal expansion coefficient of the glass.
Thermomechanical properties and composition of the following glass brands: LK5,
Schott Borofloat 33, Corning 7740, Hoya SD-2 were measured.
  The third chapter describes the existing models of estimating the residual
stresses in the silicon-glass bonds. Two models based on a theory of strength
of materials and the classical lamination theory with an additional temperature
dependence of coefficients of thermal expansion are proposed for further use.
Residual stresses in silicon-glass bonds are estimated with these models and
data from the preceding chapter.
  The fourth chapter describes the experiments carried out to confirm claims
from the previous chapters. The proposed technique of minimizing residual
stresses is described as steps for a device designer.
