  We introduce a solvable model of a nonlinear double-barrier structure,
described by a generalized effective-mass equation with a nonlinear coupling
term. This model is interesting in its own right for possible new applications,
as well as to help understand the combined effect of spatial correlations and
nonlinearity on disordered systems. Although we specifically discuss the
application of the model to electron transport in semiconductor devices, our
results apply to other contexts, such as nonlinear optical phenomena. Our model
consists of finite width barriers and nonlinearities are dealt with separately
in the barriers and in the well, both with and without applied electric fields.
We study a wide range of nonlinearity coupling values. When the nonlinear term
is only present in the barriers, a sideband is observed in addition to the main
resonance and, as a consequence, the current-voltage characteristics present
two peaks at different voltages. In this case, the phenomenology remains
basically the same through all the considered variation of the parameters. When
the well is the component exhibiting nonlinearity, the results depend strongly
on the nonlinear coefficient. For small values, the current-voltage
characteristics exhibit lower and upper voltage cutoffs. This phenomenon is not
present at higher nonlinearities, and eventually linear-like behavior is
recovered. We complete this exhaustive study with an analysis of the effects of
having simultaneously both kinds of nonlinear couplings. We conclude the paper
with a summary of our results, their technological implications, and a
prospective discussion of the consequences of our work for more complex
systems.
