  Since the first realization of reversible charge doping in graphene via
field-effect devices, it has become evident how the induction a gap could
further enhance its potential for technological applications. Here we show that
the gap opening due to a sublattice symmetry breaking has also a profound
impact on the polar response of graphene. By combining ab-initio calculations
and analytical modelling we show that for realistic band-gap values
($\Delta\lesssim 0.5$ eV) the piezoelectric coefficient and the Born effective
charge of graphene attain a giant value, independent on the gap. In particular
the piezoelectric coefficient per layer of gapped mono- and bilayer graphene is
three times larger than that of a large-gap full polar insulator as hexagonal
Boron Nitride (h-BN) monolayer, and 30\% larger than that of a polar
semiconductor as MoS$_2$. This surprising result indicates that piezoelectric
acoustic-phonons scattering can be relevant to model charge transport and
charge-carrier relaxation in gated bilayer graphene. The independence of the
piezoelectric coefficient and of the Born effective charge on the gap value
follows from the connection between the polar response and the valley Chern
number of gapped Dirac electrons, made possible by the effective gauge-field
description of the electron-lattice/strain coupling in these systems. In the
small gap limit, where the adiabatic ab-initio approximation fails, we
implement analytically the calculation of the dynamical effective charge, and
we establish a universal relation between the complex effective charge and the
so-called Fano profile of the phonon optical peak. Our results provide a
general theoretical framework to understand and compute the polar response in
narrow-gap semiconductors, but may also be relevant for the contribution of
piezoelectric scattering to the transport properties in Dirac-like systems.
