  We calculate low-frequency noise (LFN) in a quantum point contact (QPC) which
is electrostatically defined in a 2D electron gas of a GaAs-AlGaAs
heterostructure. The conventional source of LFN in such systems are scattering
potentials fluctuating in time acting upon injected electrons. One can
discriminate between potentials of different origin -- noise may be caused by
the externally applied gate- and source-drain voltages, the motion of defects
with internal degrees of freedom close to the channel, electrons hopping
between localized states in the doped region, etc. In the present study we
propose a model of LFN based upon the assumption that there are many dynamic
defects in the surrounding of a QPC. A general expression for the
time-dependent current-current correlation function is derived and applied to a
QPC with quantized conductance. It is shown that the level of LFN is
significantly different at and between the steps in a plot of the conductance
vs. gate voltage. On the plateaus, the level of noise is found to be low and
strongly model-dependent. At the steps, LFN is much larger and only weakly
model-dependent. As long as the system is biased to be at a fixed position
relative the conductance step,
