  Substrate plays a crucial role in determining transport and low frequency
noise behavior of graphene field effect devices. Typically, heavily dope
Si/SiO$_2$ substrate is used to fabricate these devices for efficient gating.
Trapping-detrapping processes closed to the graphene/substrate interface are
the dominant sources of resistance fluctuations in the graphene channel, while
Coulomb fluctuations arising due to any remote charge fluctuations inside the
bulk of the substrate are effectively screened by the heavily doped substrate.
Here, we present electronic transport and low frequency noise characteristics
of large area CVD graphene field effect transistor (FET) prepared on a lightly
doped Si/SiO$_2$ substrate (N$_A$ $\sim$ 10$^{15}$cm$^{-3}$). Through a
systematic characterization of transport, noise and capacitance at various
temperature, we reveal that remote Si/SiO$_2$ interface can affect the charge
transport in graphene severely and any charge fluctuations inside bulk of the
silicon substrate can be sensed by the graphene channel. The resistance (R) vs.
back gate voltage (V$_{bg}$) characteristics of the device shows a hump around
the depletion region formed at the SiO$_2$/Si interface, confirmed by the
capacitance (C) - Voltage (V) measurement. Low frequency noise measurement on
these fabricated devices shows a peak in the noise amplitude close to the
depletion region. This indicates that due to the absence of any charge layer at
Si/SiO$_2$ interface, screening ability decreases and as a consequence, any
fluctuations in the deep level coulomb impurities inside the silicon substrate
can be observed as a noise in resistance in graphene channel via mobility
fluctuations. Noise behavior on ionic liquid gated graphene on the same
substrate exhibits no such peak in noise and can be explained by the
interfacial trapping - detrapping processes closed to the graphene channel.
