  We present the simultaneous optical and thermal analysis of a freestanding
photonic semiconductor membrane made from wurtzite III-nitride material. By
linking micro-photoluminescence ($\mu$PL) spectroscopy with Raman thermometry,
we demonstrate how a robust value for the thermal conductivity $\kappa$ can be
obtained using only optical, non-invasive means. For this, we consider the
balance of different contributions to thermal transport given by, e.g.,
excitons, charge carriers, and heat carrying phonons. Further complication is
given by the fact that this membrane is made from direct bandgap
semiconductors, designed to emit light based on an In$_{x}$Ga$_{1-x}$N
($x=0.15$) quantum well embedded in GaN. To meet these challenges, we designed
a novel experimental setup that enables the necessary optical and thermal
characterizations in parallel. We perform micro-Raman thermometry, either based
on a heating laser that acts as a probe laser (1-laser Raman thermometry), or
based on two lasers, providing the heating and the temperature probe separately
(2-laser Raman thermometry). For the latter technique, we obtain temperature
maps over tens of micrometers with a spatial resolution less than
$1\,\mu\text{m}$, yielding
$\kappa\,=\,95^{+11}_{-7}\,\frac{\text{W}}{\text{m}\cdot \text{K}}$ for the
$\textit{c}$-plane of our $\approx\,250\text{-nm}$-thick membrane at around
room temperature, which compares well to our $\textit{ab initio}$ calculations
applied to a simplified structure. Based on these calculations, we explain the
particular relevance of the temperature probe volume, as quasi-ballistic
transport of heat-carrying phonons occurs on length scales beyond the
penetration depths of the heating laser and even its focus spot radius. The
present work represents a significant step towards non-invasive, highly
spatially resolved, and still quantitative thermometry performed on a photonic
membrane.
