  The electronic structure of semiconductors and insulators is affected by
ionic motion through electron-phonon interaction, yielding
temperature-dependent band gap energies and zero-point renormalization (ZPR) at
absolute zero temperature. For polar materials, the most significant
contribution to the band gap ZPR can be understood in terms of the Fr\"ohlich
model, which focuses on the nonadiabatic interaction between an electron and
the macroscopic electrical polarization created by a long-wavelength optical
longitudinal phonon mode. On the other hand, spin-orbit interaction (SOC)
modifies the bare electronic structure, which will, in turn, affect the
electron-phonon interaction and the ZPR. We present a comparative investigation
of the effect of SOC on the band gap ZPR of twenty semiconductors and
insulators with cubic symmetry using first-principles calculations. We observe
a SOC-induced decrease of the ZPR, up to 30%, driven by the valence band edge,
which almost entirely originates from the modification of the bare electronic
eigenenergies and the decrease of the hole effective masses near the $\Gamma$
point. We also incorporate SOC into a generalized Fr\"ohlich model, addressing
the Dresselhaus splitting which occurs in noncentrosymmetric materials, and
confirm that the predominance of nonadiabatic effects on the band gap ZPR of
polar materials is unchanged when including SOC. Our generalized Fr\"ohlich
model with SOC provides a reliable estimate of the SOC-induced decrease of the
polaron formation energy obtained from first principles and brings to light
some fundamental subtleties in the numerical evaluation of the effective masses
with SOC for noncentrosymmetric materials. We finally warn about a possible
breakdown of the parabolic approximation within the physically relevant energy
range of the Fr\"ohlich interaction for materials with high phonon frequencies
treated with SOC.
