  Fe$_4$GeTe$_2$, an itinerant vdW ferromagnet (FM) having Curie temperature
(T$_C$) close to room temperature ($\sim 270$ K), exhibits another transition
(T$_{SR}$ $\sim$ 120 K) where the easy axis of magnetization changes from
in-plane to the out-of-plane direction in addition to T$_C$. Here, we have
studied the magnetotransport in a multilayer Hall bar device fabricated on 300
nm Si/SiO$_2$ substrate. Interestingly, the zero field resistivity shows a
negligible change in resistivity near T$_C$ unlike the typical metallic FM,
whereas, it exhibits a dramatic fall below T$_{SR}$. Also, the resistivity
shows a weak anomaly at T $ \sim $ 38 K (T$_Q$), below which the resistivity
shows a quadratic temperature dependence according to the Fermi liquid
behavior. Temperature-dependent Hall data exhibits important consequences. The
ordinary Hall coefficient changes sign near T$_{SR}$ indicating the change in
majority carriers. In a similar manner, the magnetoresistance (MR) data shows
significantly large negative MR near T$_{SR}$ and becomes positive below T$_Q$.
The observations of anomaly in the resistivity, sign-change of the ordinary
Hall coefficient and maximum negative MR near T$_{SR}$, together suggest a
possible Fermi surface reconstruction associated with the spin reorientation
transition. Furthermore, analysis of the Hall data reveals a significant
anomalous Hall conductivity (AHC) from $\sim 123 \Omega^{-1}$ cm$^{-1}$ (at T
$\approx$ 5 K) to the maximum value of $\sim 366 \Omega^{-1}$ cm$^{-1}$ near
T$_{SR}$. While the low-temperature part may originate due to the intrinsic KL
mechanism, our analysis indicates that the temperature-dependent AHC is
primarily appearing due to the side-jump mechanism as a result of the spin-flip
electron-magnon scattering. Our study demonstrates an interplay between
magnetism and band topology and its consequence on electron transport in
Fe$_4$GeTe$_2$.
