  Combining both vertical and in-plane two-dimensional (2D) heterostructures
opens up the possibility to create an unprecedented architecture using 2D
atomic layer building blocks. The thermal transport properties of such mixed
heterostructures, critical to various applications in nanoelectronics, however,
have not been thoroughly explored. Herein, we construct two configurations of
multilayer in-plane graphene/hexagonal boron nitride (Gr/h-BN) heterostructures
(i.e. mixed heterostructures) via weak van der Waals (vdW) interactions and
systematically investigate the dependence of their interfacial thermal
conductance (ITC) on the number of layers using non-equilibrium molecular
dynamics (NEMD) simulations. The computational results show that the ITC of two
configurations of multilayer in-plane Gr/h-BN heterostructures (MIGHHs)
decrease with increasing layer number n and both saturate at n = 3. And
surprisingly, we find that the MIGHH is more advantageous to interfacial
thermal transport than the monolayer in-plane Gr/h-BN heterostructure, which is
in strong contrast to the commonly held notion that the multilayer structures
of Gr and h-BN suppress the phonon transmission. The underlying physical
mechanisms for these puzzling phenomena are probed through the analyses of heat
flux, temperature jump, stress concentration factor, overlap of phonon
vibrational spectra and phonon participation ratio. In particular, by changing
the stacking angle of MIGHH, a higher ITC can be obtained due to the thermal
rectification behavior. Furthermore, we find that the ITC in MIGHH can be
well-regulated by controlling the coupling strength between layers. Our
findings here are of significance for understanding the interfacial thermal
transport behaviors of multilayer in-plane Gr/h-BN heterostructure, and are
expected to attract extensive interest in exploring its new physics and
applications.
