  Epitaxial semiconductor quantum dots (QDs) are a promising resource for
quantum light generation and the realization of non-linear quantum photonic
elements operating at the single-photon level. Their random spatial
distribution resulting from their self-organized nature, however, restrains the
fabrication yield of quantum devices with the desired functionality. As a
solution, the QDs can be imaged and localized, enabling deterministic device
fabrication. Due to the significant electronic noise of camera sensors
operating in the telecommunication C-band, $1530-1560~\mathrm{nm}$, this
technique remained challenging. In this work, we report on the imaging of QDs
epitaxially grown on InP with emission wavelengths in the telecom C-band
demonstrating a localization accuracy of $80~\mathrm{nm}$. This is enabled by
the hybrid integration of QDs in a planar sample geometry with a bottom
metallic reflector to enhance the out-of-plane emission. To exemplify our
approach, we successfully fabricate circular Bragg grating cavities around
single pre-selected QDs with an overall cavity placement uncertainty of
$90~\mathrm{nm}$. QD-cavity coupling is demonstrated by a Purcell enhancement
up to $\sim5$ with an estimated photon extraction efficiency of
$(16.6\pm2.7)\%$ into a numerical aperture of $0.4$. We demonstrate triggered
single-photon emission with $g^{(2)}(0)=(3.2\pm0.6)\times10^{-3}$ and
record-high photon indistinguishability associated with two-photon interference
visibilities of $V = (19.3\pm2.6)\%$ and $V_{\mathrm{PS}} =
99.8^{+0.2}_{-2.6}\%$ without and with temporal postselection, respectively.
While the performance of our devices readily enables proof-of-principle
experiments in quantum information, further improvements in the yield and
coherence may enable the realization of non-linear devices at the single photon
level and advanced quantum networks at the telecom wavelength.
