  On-chip memory (usually based on Static RAMs-SRAMs) are crucial components
for various computing devices including heterogeneous devices, e.g., GPUs,
FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural
Networks (DNNs) running on these heterogeneous fabrics are highly dependent on
the on-chip memory architecture for efficient acceleration. Hence, improving
the energy-efficiency of such memories directly leads to an efficient system.
One of the common methods to save energy is undervolting i.e., supply voltage
underscaling below the nominal level. Such systems can be safely undervolted
without incurring faults down to a certain voltage limit. This safe range is
also called voltage guardband. However, reducing voltage below the guardband
level without decreasing frequency causes timing-based faults.
  In this paper, we propose MoRS, a framework that generates the first
approximate undervolting fault model using real faults extracted from
experimental undervolting studies on SRAMs to build the model. We inject the
faults generated by MoRS into the on-chip memory of the DNN accelerator to
evaluate the resilience of the system under the test. MoRS has the advantage of
simplicity without any need for high-time overhead experiments while being
accurate enough in comparison to a fully randomly-generated fault injection
approach. We evaluate our experiment in popular DNN workloads by mapping
weights to SRAMs and measure the accuracy difference between the output of the
MoRS and the real data. Our results show that the maximum difference between
real fault data and the output fault model of MoRS is 6.21%, whereas the
maximum difference between real data and random fault injection model is 23.2%.
In terms of average proximity to the real data, the output of MoRS outperforms
the random fault injection approach by 3.21x.
