  Investigation of the magnetic switching and magnetoresistive behaviour of
nanoscale spin valve elements of different sizes, shapes and arrays is of vital
importance for their application in future magnetic memory and storage devices.
To this end, we have inspected the magnetic switching mechanism and
magnetoresistive behaviour of nanoscale spin valve (Co/Cu/Ni80Fe20) elements of
two different shapes with varying lateral aspect ratios (ARs) by computational
micromagnetic simulation. Further, we have inspected the same for 2x2 and 3x3
arrays of the elliptical elements with AR = 1.25 of varying interelement
spacing. We have analysed how the shape of the hysteresis loop and its various
parameters such as the coercive field, remanence, saturation field were altered
by the variation in magnetic field. The magnetization reversal states were
simulated to explore the spatial coherence of magnetization switching. We
observe that the elements with higher AR show the Ni80Fe20 and Co layers
forming antiparallel states in the plateau similar to synthetic
antiferromagnets. As we reduce the AR, more complex quasi-uniform magnetic
states are observed which are even more complicated for elliptical elements.
The elliptical elements with the aspect ratio of 1.25 shows coherent and
predictable switching behaviour, showing its suitability for the application in
magnetic memory elements. We observe a gradual increase in magnetoresistance
(MR%) with the increase in AR of the spin valve elements, and the decrease in
interelement spacing between the spin valve elements in their arrays. The
magnetic flux density decreases, as we increase the cell spacing between the
elements. The magnetic hysteresis loops, magnetoresistance and spatial
coherence of magnetic switching give a guiding principle for selection of
geometric parameters of nanoscale spin valve arrays towards their application
in magnetic memory devices.
