  Spintronics-based nonvolatile components in neuromorphic circuits offer the
possibility of realizing novel functionalities at low power. Current-controlled
electrical switching of magnetization is actively researched in this context.
Complex oxide heterostructures with perpendicular magnetic anisotropy (PMA),
consisting of SrRuO$_3$ (SRO) grown on SrTiO$_3$ (STO) are strong material
contenders. Utilizing the crystal orientation, magnetic anisotropy in such
simple heterostructures can be tuned to either exhibit a perfect or slightly
tilted PMA. Here, we investigate current-induced magnetization modulation in
such tailored ferromagnetic layers with a material with strong spin-orbit
coupling (Pt), exploiting the spin Hall effect. We find significant differences
in the magnetic anisotropy between the SRO/STO heterostructures, as manifested
in the first and second harmonic magnetoresistance measurements.
Current-induced magnetization switching can be realized with spin-orbit
torques, but for systems with perfect PMA this switching is probabilistic as a
result of the high symmetry. Slight tilting of the PMA can break this symmetry
and allow the realization of deterministic switching. Control over the magnetic
anisotropy of our heterostructures therefore provides control over the manner
of switching. Based on our findings, we propose a three-terminal spintronic
memristor, with a magnetic tunnel junction design, that shows several resistive
states controlled by electric charge. Non-volatile states can be written
through SOT by applying an in-plane current, and read out as a tunnel current
by applying a small out-of-plane current. Depending on the anisotropy of the
SRO layer, the writing mechanism is either deterministic or probabilistic
allowing for different functionalities to emerge. We envisage that the
probabilistic MTJs could be used as synapses while the deterministic devices
can emulate neurons
