  Two dimensional materials such as graphene and transition metal
dichalcogenides (TMDs) are promising for optical modulation, detection, and
light emission since their material properties can be tuned on-demand via
electrostatic doping. The optical properties of TMDs have been shown to change
drastically with doping in the wavelength range near the excitonic resonances.
However, little is known about the effect of doping on the optical properties
of TMDs away from these resonances, where the material is transparent and
therefore could be leveraged in photonic circuits. Here, we probe the
electro-optic response of monolayer TMDs at near infrared (NIR) wavelengths
(i.e. deep in the transparency regime), by integrating them on silicon nitride
(SiN) photonic structures to induce strong light$-$matter interaction with the
monolayer. We dope the monolayer to carrier densities of ($7.2 \pm 0.8$)
$\times$ $10^{13} \textrm{cm}^{-2}$, by electrically gating the TMD using an
ionic liquid. We show strong electro-refractive response in monolayer tungsten
disulphide (WS$_2$) at NIR wavelengths by measuring a large change in the real
part of refractive index $\Delta$n = $0.53$, with only a minimal change in the
imaginary part $\Delta$k = $0.004$. The doping induced phase change
($\Delta$n), compared to the induced absorption ($\Delta$k) measured for WS$_2$
($\Delta$n/$\Delta$k $\sim 125$), a key metric for photonics, is an order of
magnitude higher than the $\Delta$n/$\Delta$k for bulk materials like silicon
($\Delta$n/$\Delta$k $\sim 10$), making it ideal for various photonic
applications. We further utilize this strong tunable effect to demonstrate an
electrostatically gated SiN-WS$_2$ phase modulator using a WS$_2$-HfO$_2$
(Hafnia)-ITO (Indium Tin Oxide) capacitive configuration, that achieves a phase
modulation efficiency (V$_\pi$L) of 0.8 V $\cdot$ cm with a RC limited
bandwidth of 0.3 GHz.
