  To mitigate the ever-worsening Power Wall problem, more and more applications
need to expand their power supply to the wide-voltage range including the
near-threshold region. However, the read delay distribution of the SRAM cells
under the near-threshold voltage shows a more serious long-tail characteristic
than that under the nominal voltage due to the process fluctuation. Such
degradation of SRAM delay makes the SRAM-based cache a performance bottleneck
of systems as well. To avoid the unreliable data reading, circuit-level studies
use larger/more transistors in a bitcell by scarifying chip area and the static
power of cache arrays. Architectural studies propose the auxiliary error
correction or block disabling/remapping methods in fault-tolerant caches, which
worsen both the hit latency and energy efficiency due to the complex accessing
logic. This paper proposes the Timing-Speculation (TS) cache to boost the cache
frequency and improve energy efficiency under low supply voltages. In the TS
cache, the voltage differences of bitlines are continuously evaluated twice by
a sense amplifier (SA), and the access timing error can be detected much
earlier than that in prior methods. According to the measurement results from
the fabricated chips, the TS L1 cache aggressively increases its frequency to
1.62X and 1.92X compared with the conventional scheme at 0.5V and 0.6V supply
voltages, respectively.
