  We are honored to dedicate this article to Emmanuel Rashba on the occasion of
his 95 birthday. In the ideal disorder-free situation, a two-dimensional band
gap insulator has an activation energy for conductivity equal to half the band
gap, $\Delta$. But transport experiments usually exhibit a much smaller
activation energy at low temperature, and the relation between this activation
energy and $\Delta$ is unclear. Here we consider the temperature-dependent
conductivity of a two-dimensional narrow gap semiconductor on a substrate
containing Coulomb impurities, mostly focusing on the case when amplitude of
the random potential $\Gamma \gg \Delta$. We show that the conductivity
generically exhibits three regimes and only the highest temperature regime
exhibits an activation energy that reflects the band gap. At lower
temperatures, the conduction proceeds through nearest-neighbor or
variable-range hopping between electron and hole puddles created by the
disorder. We show that the activation energy and characteristic temperature
associated with these processes steeply collapse near a critical impurity
concentration. Larger concentrations lead to an exponentially small activation
energy and exponentially long localization length, which in mesoscopic samples
can appear as a disorder-induced insulator-to-metal transition. We arrive at a
similar disorder driven steep insulator-metal transition in thin films of
three-dimensional topological insulators with very large dielectric constant,
where due to confinement of electric field internal Coulomb impurities create
larger disorder potential. Away from neutrality point this unconventional
insulator-to-metal transition is augmented by conventional metal-insulator
transition at small impurity concentrations, so that we arrive at
disorder-driven re-entrant metal-insulator-metal transition.
