  We study light-induced nuclear spin-polarization in a thin film of Ga1-xMnxAs
(x 0.04), a dilute ferromagnetic semiconductor, grown on a GaAs substrate.
High-field inductively-detected Ga-71 NMR was performed with samples immersed
in superfluid He to investigate the effects of continuous-wave near band-edge
optical illumination on lattice nuclear spins in the ferromagnetic phase. The
photon energy dependence of the light-induced NMR signals for GaAs and the
GaMnAs film samples were recorded using circularly polarized light.
Interpretation of the data was guided by electronic band structure calculations
using the k.p method in the presence of an external magnetic field using the
modified 8-band Pidgeon-Brown model. The photon energy dependence of the NMR
transition intensity exhibited a shift of the absorption band edge; invariance
with respect to the sense of helicity of the exciting light; and an absence of
oscillations in the photon energy dependence, all of which are consistent with
theoretical predictions. The dynamics of the optically activated NMR
experiments was investigated by variable optical intensity studies and
light/dark modulated optical pumping experiments. This is because doping with
Mn (a p-type dopant) can push the Fermi level deep into the valence bands and
block the optical transitions (Burstein-Moss effect) needed to create spin
polarized electrons. Additionally, the calculated enhancement of the conduction
electron g-factor by over two orders of magnitude is expected to quench the
electron-nuclear spin angular moment transfer, which impedes the
hyperpolarization of lattice nuclei. Experiments with variable light intensity
and optical gating reveal a mechanism consistent with light-induced quadrupolar
relaxation, a process that will certainly interfere with the optical transfer
and storage of quantum information in the lattice nuclear spin states in this
material.
