  The first study of two-dimensional electron gas in surface layers on HgMnTe
with inverted bands is carried out experimentally and theoretically. It is
shown that the structure of investigated capacitance magnetooscillations in
HgMnTe MOS structures is fully similar to the one in the non-magnetic
narrow-gap semiconductor HgCdTe and the sole effect due to exchange interaction
is the temperature shift of beat nodes. The information about exchange effects
is obtained only due to our modeling of oscillations, because any pronounced
changes in the position of oscillations are not observed and the separate spin
components are not resolved. The Landau levels are calculated in the framework
of concept we developed previously for the description of subband dispersions
in zero magnetic field B=0. The new parameters (like those of $T/\sqrt{eB}$)
arise in the theory of magnetooscillations in the semiconductors with
quasirelativistic spectrum in contrast to the case of parabolic bands. The
modeling shows that the spin-orbit splitting far exceeds a contribution due to
exchange interaction. The calculated amplitudes of ``partial'' oscillations for
different spin branches of spectrum are essentially different in accordance
with the observed difference in the intensity of corresponding lines in Fourier
spectra. The comparison between experiment and theory for different
temperatures and parameters of exchange interaction is reported. The dominant
mechanisms of the scattering responsible for the broadening of Landau levels
are discussed.
