  The present work is concerned with studying accurately the energy-loss
processes that control the thermalization of hot electrons and holes that are
generated by high-energy radiation in wurtzite GaN, using an ab initio
approach. Current physical models of the nuclear/particle physics community
cover thermalization in the high-energy range (kinetic energies exceeding ~100
eV), and the electronic-device community has studied extensively carrier
transport in the low-energy range (below ~10 eV). However, the processes that
control the energy losses and thermalization of electrons and holes in the
intermediate energy range of about 10-100 eV (the "10-100 eV gap") are poorly
known. The aim of this research is to close this gap, by utilizing density
functional theory (DFT) to obtain the band structure and dielectric function of
GaN for energies up to about 100 eV. We also calculate charge-carrier
scattering rates for the major charge-carrier interactions (phonon scattering,
impact ionization, and plasmon emission), using the DFT results and first-order
perturbation theory. With this information, we study the thermalization of
electrons starting at 100 eV using the Monte Carlo method to solve the
semiclassical Boltzmann transport equation. Full thermalization of electrons
and holes is complete within ~1 and 0.5 ps, respectively. Hot electrons
dissipate about 90% of their initial kinetic energy to the electron-hole gas
(90 eV) during the first ~0.1 fs, due to rapid plasmon emission and impact
ionization at high energies. The remaining energy is lost more slowly as phonon
emission dominates at lower energies (below ~10 eV). During the thermalization,
hot electrons generate pairs with an average energy of ~8.9 eV/pair (11-12
pairs per hot electron). Additionally, during the thermalization, the maximum
electron displacement from its original position is found to be on the order of
100 nm.
