  Semiconductor core$-$shell nanowires based on the GaAs substrate are building
blocks of many photonic, photovoltaic and electronic devices, thanks to the
associated direct band-gap and the highly tunable optoelectronic properties.
The selection of a suitable material system is crucial for custom designed
nanowires tailored for optimised device performance. The bismuth containing
GaAs materials are an imminent class of semiconductors which not only enable an
exquisite control over the alloy strain and electronic structure but also offer
the possibility to suppress internal loss mechanisms in photonic devices.
Whilst the experimental efforts to incorporate GaBiAs alloys in the nanowire
active region are still in primitive stage, the theoretical understanding of
the optoelectronic properties of such nanowires is only rudimentary. This work
elucidates and quantifies the role of nanowire physical attributes such as its
geometry parameters and bismuth incorporation in designing light absorption
wavelength and polarisation response. Based on multi-million atom tight-binding
simulations of the GaBiAs/GaAs core$-$shell and GaAs/GaBiAs/GaAs multi$-$shell
nanowires, our results predict a large tuning of the absorption wavelength,
ranging from 0.9 $\mu$m to 1.6 $\mu$m, which can be controlled by engineering
either Bi composition or nanowire diameter. The analysis of the strain profiles
indicates a tensile character leading to significant light-hole mixing in the
valence band states. This offers a possibility to achieve
polarisation-insensitive light interaction, which is desirable for several
photonic devices involving amplification and modulation of light. Furthermore,
at low Bi compositions, the carrier confinement is quasi type-II, which further
broadens the suitability of these nanowires for myriad applications demanding
large carrier separations...
