  The effect of doping on the TB model of the CuO planes in the La2CuO4
constructed in previous works is investigated. Firstly, it is noted that the
model employed constitutes a generalization of the Hubbard one for the same
system. Thus, the former predictions of the insulator gap, antiferromagnetic
character and the existence of a paramagnetic-pseudogap state, become natural
ones to be expected from this more general picture. The effect of hole doping
on the antiferromagnetic-insulator state (AFI) and the paramagnetic-pseudogap
one, is investigated. The results predict a quantum phase transition (QPT) from
the AFI state at low doping to a paramagnetic-metallic state (PM) at higher
hole densities. Therefore, a clear description of the hidden QPT laying beneath
the dome in high critical temperature superconducting materials is found. At
low doping, the system prefers the AFI state, and at the critical value of the
doping density 0.2, the energy of a metallic state becomes lower. The evolution
with small doping values of the band spectrum of the AFI state, shows that the
holes tend to become localized at the middle of the sides of the reduced
Brillouin zone (BZ). Then, around the critical value, the holes of the AFI
state move to become situated at the corners of the same reduced BZ, showing a
structural change at the phase transition point. Thus, the PM state appearing
at the QPT acquires the same behavior with respect to the position of holes as
the pseudogap state. In the small doping limit a clear difference between the
degree of convergence of the iterative self-consistent solution is associated
to an even or odd number of electrons. It suggests that the Kramers
degeneration in combination with the spin-spatial entangled nature of the hole
states, leads to a new kind of pair interaction between two holes. The binding
energy value is estimated as a function of the screening.
