  Issues of Ge hut array formation and growth at low temperatures on the
Ge/Si(001) wetting layer are discussed on the basis of explorations performed
by high resolution STM and in-situ RHEED. Data of HRTEM studies of multilayer
Ge/Si heterostructures are presented with the focus on low-temperature
formation of perfect films. Heteroepitaxial Si p-i-n-diodes with multilayer
stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have
been investigated and found to exhibit the photo-emf in a wide spectral range
from 0.8 to 5 mcm. An effect of wide-band irradiation by infrared light on the
photo-emf spectra has been observed. Photo-emf in different spectral ranges has
been found to be differently affected by the wide-band irradiation. A
significant increase in photo-emf is observed in the fundamental absorption
range under the wide-band irradiation. The observed phenomena are explained in
terms of positive and neutral charge states of the quantum dot layers and the
Coulomb potential of the quantum dot ensemble. By using a coherent source
spectrometer, first measurements of terahertz dynamical conductivity
(absorptivity) spectra of Ge/Si(001) heterostructures were performed at
frequencies 0.3-1.2 THz in the temperature interval from 300 to 5 K. The
effective dynamical conductivity of the heterostructures with Ge quantum dots
has been discovered to be significantly higher than that of the structure with
the same amount of bulk germanium (not organized in an array of quantum dots).
The excess conductivity is not observed in the structures with the Ge coverage
less than 8 \AA. When a Ge/Si(001) sample is cooled down the conductivity
decreases. We discuss possible mechanisms that can be responsible for the
observed effects.
