  The maximum output power of GaN-based high-electron mobility transistors is
limited by high channel temperature induced by localized self-heating which
degrades device performance and reliability. With generated heat fluxes within
these devices reaching magnitude close to ten times of that at the sun surface,
chemical vapor deposition (CVD) diamond is an attractive candidate to aid in
the extraction of this heat in order to keep the operating temperatures of
these high power electronics as low as possible. Due to the observed
inhomogeneous structure, CVD diamond membranes exhibit a 3D anisotropic thermal
conductivity which may result in significantly different cooling performance
from expected in a given application. In this work, time domain
thermoreflectance (TDTR) is used to measure the thermal properties of an
11.8-{\mu}m CVD diamond membrane from its nucleation side. Starting with a spot
size diameter larger than the thickness of the membrane, measurements are made
at various modulation frequencies from 1.2 MHz to 11.6 MHz to tune the heat
penetration depth, and subsequently the part of diamond sampled by TDTR. We
divide the membrane into ten sublayers and assume isotropic thermal
conductivity in each sublayer. From this, we observe a 2D gradient of the
depth-dependent thermal conductivity for this membrane. By measuring the same
region with a smaller spot size at multiple frequencies, the in-plane and
cross-plane thermal conductivity are extracted respectively. Through this use
of multiple spot sizes and modulation frequencies, the 3D anisotropic thermal
conductivity of CVD diamond membrane is experimentally obtained by fitting the
experimental data to a thermal model. This work provides insight toward an
improved understanding of heat conduction inhomogeneity in CVD polycrystalline
diamond membrane that is important for applications of thermal management of
high power electronics.
