  Understanding the interplay between electronic interactions and
disorder-induced localization has been a longstanding quest in the physics of
quantum materials. One of the most convincing demonstrations of the scaling
theory of localization for noninteracting electrons has come from plateau
transitions in the integer quantum Hall effect with short-range disorder,
wherein the localization length diverges as the critical filling factor is
approached with a measured scaling exponent close to the theoretical estimates.
In this work, we extend this physics to the fractional quantum Hall effect, a
paradigmatic phenomenon arising from a confluence of interaction, disorder, and
topology. We employ high-mobility trilayer graphene devices where the transport
is dominated by short-range impurity scattering, and the extent of Landau level
mixing can be varied by a perpendicular electric field. Our principal finding
is that the plateau-to-plateau transitions from N+1/3 to N+2/5 and from N+2/5
to N+3/7 fractional states are governed by a universal scaling exponent, which
is identical to that for the integer plateau transitions and is independent of
the perpendicular electric field. These observations and the values of the
critical filling factors are consistent with a description in terms of Anderson
localization-delocalization transitions of weakly interacting electron-flux
bound states called composite Fermions. This points to a universal effective
physics underlying fractional and integer plateau-to-plateau transitions
independent of the quasiparticle statistics of the phases and unaffected by
weak Landau level mixing. Besides clarifying the conditions for the realization
of the scaling regime for composite fermions, the work opens the possibility of
exploring a wide variety of plateau transitions realized in graphene, including
the fractional anomalous Hall phases and non-abelian FQH states.
