  In this paper, we propose a 'full-stack' solution to designing high capacity
and low latency on-chip cache hierarchies by starting at the circuit level of
the hardware design stack. First, we propose a novel Gain Cell (GC) design
using FDSOI. The GC has several desirable characteristics, including ~50%
higher storage density and ~50% lower dynamic energy as compared to the
traditional 6T SRAM, even after accounting for peripheral circuit overheads. We
also exploit back-gate bias to increase retention time to 1.12 ms (~60x of
eDRAM) which, combined with optimizations like staggered refresh, makes it an
ideal candidate to architect all levels of on-chip caches. We show that
compared to 6T SRAM, for a given area budget, GC based caches, on average,
provide 29% and 36% increase in IPC for single- and multi-programmed workloads,
respectively on contemporary workloads including SPEC CPU2017. We also observe
dynamic energy savings of 42% and 34% for single- and multi-programmed
workloads, respectively.
  We utilize the inherent properties of the proposed GC, including decoupled
read and write bitlines to devise optimizations to save precharge energy and
architect GC caches with better energy and performance characteristics.
Finally, in a quest to utilize the best of all worlds, we combine GC with
STT-RAM to create hybrid hierarchies. We show that a hybrid hierarchy with GC
caches at L1 and L2, and an LLC split between GC and STT-RAM, with asymmetric
write optimization enabled, is able to provide a 54% benefit in energy-delay
product (EDP) as compared to an all-SRAM design, and 13% as compared to an
all-GC cache hierarchy, averaged across multi-programmed workloads.
