  Phase Change Memory (PCM) is an attractive candidate for main memory as it
offers non-volatility and zero leakage power, while providing higher cell
densities, longer data retention time, and higher capacity scaling compared to
DRAM. In PCM, data is stored in the crystalline or amorphous state of the phase
change material. The typical electrically-controlled PCM (EPCM), however,
suffers from longer write latency and higher write energy compared to DRAM and
limited multi-level cell (MLC) capacities. These challenges limit the
performance of data-intensive applications running on computing systems with
EPCMs.
  Recently, researchers demonstrated optically-controlled PCM (OPCM) cells,
with support for 5 bits/cell in contrast to 2 bits/cell in EPCM. These OPCM
cells can be accessed directly with optical signals that are multiplexed in
high-bandwidth-density silicon-photonic links. The higher MLC capacity in OPCM
and the direct cell access using optical signals enable an increased read/write
throughput and lower energy per access than EPCM. However, due to the direct
cell access using optical signals, OPCM systems cannot be designed using
conventional memory architecture. We need a complete redesign of the memory
architecture that is tailored to the properties of OPCM technology.
  This paper presents the design of a unified network and main memory system
called COSMOS that combines OPCM and silicon-photonic links to achieve high
memory throughput. COSMOS is composed of a hierarchical multi-banked OPCM array
with novel read and write access protocols, and uses an
Electrical-Optical-Electrical (E-O-E) control unit to interface with the
processor. Our evaluation of a 2.5D-integrated system containing a processor
and COSMOS demonstrates 2.14x average speedup compared to an EPCM system.
COSMOS consumes 3.8x lower read energy-per-bit and 5.97x lower write
energy-per-bit compared to EPCM.
