  Elastic strain engineering utilizes stress to realize unusual material
properties. For instance, strain can be used to enhance the electron mobility
of a semiconductor, enabling more efficient solar cells and smaller, faster
transistors. In the context of nanomechanics, the pursuit of resonators with
ultra-high coherence has led to intense study of a complementary strain
engineering technique, "dissipation dilution", whereby the stiffness of a
material is effectively increased without added loss. Dissipation dilution is
known to underlie the anomalously high Q factor of Si$_3$N$_4$ nanomechanical
resonators, including recently-developed "soft-clamped" resonators; however,
the paradigm has to date relied on weak strain produced during material
synthesis. By contrast, the use of geometric strain engineering techniques --
capable of producing local stresses near the material yield strength -- remains
largely unexplored. Here we show that geometric strain combined with
soft-clamping can produce unprecedentedly high Q nanomechanical resonators.
Specifically, using a spatially non-uniform phononic crystal pattern, we
colocalize the strain and flexural motion of a Si$_3$N$_4$ nanobeam, while
increasing the former to near the yield strength. This combined strategy
produces string-like modes with room-temperature Q$\times$frequency products
approaching $10^{15}$ Hz, an unprecedented value for a mechanical oscillator of
any size. The devices we study can have force sensitivities of aN/rtHz, perform
hundreds of quantum coherent oscillations at room temperature, and attain Q >
400 million at radio frequencies. These results signal a paradigm shift in the
control of nanomechanical dissipation, with impact ranging from precision force
microscopy to tests of quantum gravity. Combining the reported approach with
crystalline or 2D materials may lead to further improvement, of as yet unknown
limitation.
