  A new scheme for constructing approximate effective electron potentials
within density-functional theory is proposed. The scheme consists of
calculating the effective potential for a series of reference systems, and then
using these potentials to construct the potential of a general system. To make
contact to the reference system the neutral-sphere radius of each atom is used.
The scheme can simplify calculations with partial wave methods in the
atomic-sphere or muffin-tin approximation, since potential parameters can be
precalculated and then for a general system obtained through simple
interpolation formulas. We have applied the scheme to construct electron
potentials of phonons, surfaces, and different crystal structures of silicon
and aluminum atoms, and found excellent agreement with the self-consistent
effective potential. By using an approximate total electron density obtained
from a superposition of atom-based densities, the energy zero of the
corresponding effective potential can be found and the energy shifts in the
mean potential between inequivalent atoms can therefore be directly estimated.
This approach is shown to work well for surfaces and phonons of silicon.
