  Defects in atomically thin materials can drive new functionalities and expand
applications to multifunctional systems that are monolithically integrated. An
ability to control formation of defects during the synthesis process is an
important capability to create practical deployment opportunities. Molybdenum
disulfide (MoS$_2$), a two-dimensional (2D) semiconducting material harbors
intrinsic defects that can be harnessed to achieve tuneable electronic,
optoelectronic, and electrochemical devices. However, achieving precise control
over defect formation within monolayer MoS$_2$, while maintaining the
structural integrity of the crystals remains a notable challenge. Here, we
present a one-step, in-situ defect engineering approach for monolayer MoS$_2$
using a pressure dependent chemical vapour deposition (CVD) process. Monolayer
MoS$_2$ grown in low-pressure CVD conditions (LP-MoS$_2$) produces sulfur
vacancy (Vs) induced defect rich crystals primarily attributed to the kinetics
of the growth conditions. Conversely, atmospheric pressure CVD grown MoS$_2$
(AP-MoS$_2$) passivates these Vs defects with oxygen. This disparity in defect
profiles profoundly impacts crucial functional properties and device
performance. AP-MoS$_2$ shows a drastically enhanced photoluminescence, which
is significantly quenched in LP-MoS$_2$ attributed to in-gap electron donor
states induced by the Vs defects. However, the n-doping induced by the Vs
defects in LP-MoS$_2$ generates enhanced photoresponsivity and detectivity in
our fabricated photodetectors compared to the AP-MoS$_2$ based devices.
Defect-rich LP-MoS$_2$ outperforms AP-MoS$_2$ as channel layers of field-effect
transistors (FETs), as well as electrocatalytic material for hydrogen evolution
reaction (HER). This work presents a single-step CVD approach for in-situ
defect engineering in monolayer MoS$_2$ and presents a pathway to control
defects in other monolayer material systems.
