  Two-dimensional semiconductors, known as Transition Metal Dichalcogenides
(TMDCs), are of great interest among many materials due to their unique 2D
characteristics, including exceptional electronic and optical properties. These
compounds belong to the family of lamellar materials having a general formula
of type $MX_2$, where M represents a transition metal belonging to one of
groups IV, V, or VI of Mendeleev's periodic table, and X is a chalcogenide.
These materials exhibit fundamental properties that are qualitatively different
from their three-dimensional (3D) counterparts, often relating to their
electronic and phononic band structure. The in-depth study of these materials
has revealed remarkable phenomena, such as two-dimensional quantum phase
transitions and optoelectronic phenomena related to electronic "valleys", which
exploit the wavevector selectivity of the emission and the absorption of
photons. Unlike graphene, materials such as MoS$_2$, MoSe$_2$, WS$_2$, and
WSe$_2$ are semiconductors that have a bandgap varying from 1.2 to 1.9 electron
volts (eV), depending on the number of layers. This characteristic makes them
suitable for use as active elements in optoelectronic devices. Additionally,
their two-dimensional nature and mechanical strength enable the realization of
quantum phase transitions and electronic components on flexible substrates. It
is also possible to create quantum wells based on MoS$_2$, with materials such
as MoSe$_2$, WS$_2$, and WSe$_2$, depending on the band shift between the
components of the quantum well.
  This work aims to propose a theoretical and numerical model for these
materials, which will make it possible to determine the electronic band
structure as well as the optical gain in an active zone composed of
two-dimensional semiconductors. This research is of great importance for
evaluating the performance of active zones in laser devices based on these
materials.
