  The method developed in [L. P. Gor'kov and L. P. Pitaevskii, Sov. Phys. Dokl.
8, 788 (1964); C. Herring and M. Flicker, Phys. Rev. 134, A362 (1964)] to
calculate the asymptotic form of exchange interactions between hydrogen atoms
in the ground state is extended to excited states. The approach is then applied
to shallow centers in semiconductors. The problem of the asymptotic dependence
of the exchange interactions in semiconductors is complicated by the multiple
degeneracy of the ground state of an impurity (donor or acceptor) center in
valley or band indices, crystalline anisotropy and strong spin-orbital
interactions, especially for acceptor centers in III-V and II-VI groups
semiconductors. Properties of two coupled centers in the dilute limit can be
accessed experimentally, and the knowledge of the exact asymptotic expressions,
in addition to being of fundamental interest, must be very helpful for
numerical calculations and for interpolation of exchange forces in the case of
intermediate concentrations. Our main conclusion concerns the sign of the
magnetic interaction -- the ground state of a pair is always non-magnetic.
Behavior of the exchange interactions in applied magnetic fields is also
discussed.
