  The performance of strained silicon as the channel material for transistors
has plateaued. Motivated by increasing charge-carrier mobility within the
device channel to improve transistor performance, germanium (Ge) is considered
as an attractive option as a silicon replacement due to its highest p-type
mobility in all of the known semiconductor materials and being compatible with
today's conventional CMOS manufacturing process. However, the intrinsically
high carrier mobility of Ge becomes significantly degraded because Ge's native
oxide is unstable and readily decomposes into several GexOy suboxides with a
high density of dangling bonds at the surface. In addition, these interface
trap states will also degrade the off-state leakage current and subthreshold
turn-off of a Ge-based device, significantly affecting its stability.
Furthermore, obtaining low-resistance Ohmic contacts to n-type Ge is another
key challenge in developing Ge CMOS. To solve these challenges, extensive
efforts have been made about the incorporation of new materials, such as Al2O3,
SiN3, TiO2, ZnO, Ge3N4, MgO, HfO2, SrTiO3, and Y2O3, into Ge transistors.
Controlling the diffusion of foreign atoms into Ge is therefore a critical
issue in developing Ge transistors regarding that foreign impurities may be
detrimental to devices. In this work, we study the diffusion properties of all
common elements in Ge by performing the first-principle calculations with a
nudged elastic band method. We find some large atoms, such as Cu, Au, Pd, etc.,
have a very small diffusion barrier. We reveal the underlying mechanism in a
combination of local distortion induced by size effect and bonding effect that
controls the diffusion behaviors of different atoms in Ge. This comprehensive
study and relatively in-depth understanding of diffusion in Ge provides us with
a practical guide for utilizing it more efficiently in semiconductor devices.
