  Accurate models of carrier transport are essential for describing the
electronic properties of semiconductor materials. To the best of our knowledge,
the current models following the framework of the Boltzmann transport equation
(BTE) either rely heavily on experimental data (i.e., semi-empirical), or
utilize simplifying assumptions, such as the constant relaxation time
approximation (BTE-cRTA). While these models offer valuable physical insights
and accurate calculations of transport properties in some cases, they often
lack sufficient accuracy -- particularly in capturing the correct trends with
temperature and carrier concentration. We present here a general transport
model for calculating low-field electrical drift mobility and Seebeck
coefficient of n-type semiconductors, by explicitly considering all relevant
physical phenomena (i.e. elastic and inelastic scattering mechanisms). We first
rewrite expressions for the rates of elastic scattering mechanisms, in terms of
ab initio properties, such as the band structure, density of states, and polar
optical phonon frequency. We then solve the linear BTE to obtain the
perturbation to the electron distribution -- resulting from the dominant
scattering mechanisms -- and use this to calculate the overall mobility and
Seebeck coefficient. Using our model, we accurately calculate electrical
transport properties of the compound n-type semiconductors, GaAs and InN, over
various ranges of temperature and carrier concentration. Our fully predictive
model provides high accuracy when compared to experimental measurements on both
GaAs and InN, and vastly outperforms both semi-empirical models and the
BTE-cRTA. Therefore, we assert that this approach represents a first step
towards a fully ab initio carrier transport model that is valid in all compound
semiconductors.
