  We consider electron-phonon (\textit{e-ph}) energy loss rate in 3D and 2D
multi-component electron systems in semiconductors. We allow general asymmetry
in the \textit{e-ph} coupling constants (matrix elements), i.e., we allow that
the coupling depends on the electron sub-system index. We derive a
multi-component \textit{e-ph}power loss formula, which takes into account the
asymmetric coupling and links the total \textit{e-ph} energy loss rate to the
density response matrix of the total electron system. We write the density
response matrix within mean field approximation, which leads to coexistence of\
symmetric energy loss rate $F_{S}(T)$ and asymmetric energy loss rate
$F_{A}(T)$ with total energy loss rate $ F(T)=F_{S}(T)+F_{A}(T)$ at temperature
$T$. The symmetric component F_{S}(T) $ is equivalent to the conventional
single-sub-system energy loss rate in the literature, and in the
Bloch-Gr\"{u}neisen limit we reproduce a set of well-known power laws
$F_{S}(T)\propto T^{n_{S}}$, where the prefactor and power $n_{S}$ depend on
electron system dimensionality and electron mean free path. For $F_{A}(T)$ we
produce a new set of power laws F_{A}(T)\propto T^{n_{A}}$. Screening strongly
reduces the symmetric coupling, but the asymmetric coupling is unscreened,
provided that the inter-sub-system Coulomb interactions are strong. The lack of
screening enhances $F_{A}(T)$ and the total energy loss rate $F(T)$.
Especially, in the strong screening limit we find $F_{A}(T)\gg F_{S}(T)$. A
canonical example of strongly asymmetric \textit{e-ph} matrix elements is the
deformation potential coupling in many-valley semiconductors.
