quality:correction, structural:scholar_edition
Efficiency

Solar cell efficiency may be broken down into reflectance efficiency, thermodynamic efficiency, charge carrier separation efficiency and conductive efficiency. The overall efficiency is the product of these individual metrics.

The power conversion efficiency of a solar cell is a parameter which is defined by the fraction of incident power converted into electricity.

A solar cell has a voltage dependent efficiency curve, temperature coefficients, and allowable shadow angles.

Due to the difficulty in measuring these parameters directly, other parameters are substituted: thermodynamic efficiency, quantum efficiency, integrated quantum efficiency, V ratio, and fill factor. Reflectance losses are a portion of quantum efficiency under " external quantum efficiency ". Recombination losses make up another portion of quantum efficiency, V ratio, and fill factor. Resistive losses are predominantly categorized under fill factor, but also make up minor portions of quantum efficiency, V ratio.

The fill factor is the ratio of the actual maximum obtainable power to the product of the open-circuit voltage and short-circuit current. This is a key parameter in evaluating performance. In 2009, typical commercial solar cells had a fill factor > 0.70. Grade B cells were usually between 0.4 and 0.7. Cells with a high fill factor have a low equivalent series resistance and a high equivalent shunt resistance, so less of the current produced by the cell is dissipated in internal losses.

Single p–n junction crystalline silicon devices are now approaching the theoretical limiting power efficiency of 33.16%, noted as the Shockley–Queisser limit in 1961. In the extreme, with an infinite number of layers, the corresponding limit is 86% using concentrated sunlight.

In 2014, three companies broke the record of 25.6% for a silicon solar cell. Panasonic's was the most efficient. The company moved the front contacts to the rear of the panel, eliminating shaded areas. In addition they applied thin silicon films to the (high quality silicon) wafer's front and back to eliminate defects at or near the wafer surface.

In 2015, a 4-junction GaInP/GaAs//GaInAsP/GaInAs solar cell achieved a new laboratory record efficiency of 46.1% (concentration ratio of sunlight = 312) in a French-German collaboration between the Fraunhofer Institute for Solar Energy Systems (Fraunhofer ISE), CEA-LETI and SOITEC.

In September 2015, Fraunhofer ISE announced the achievement of an efficiency above 20% for epitaxial wafer cells. The work on optimizing the atmospheric-pressure chemical vapor deposition (APCVD) in-line production chain was done in collaboration with NexWafe GmbH, a company spun off from Fraunhofer ISE to commercialize production.

For triple-junction thin-film solar cells, the world record is 13.6%, set in June 2015.

In 2016, researchers at Fraunhofer ISE announced a GaInP/GaAs/Si triple-junction solar cell with two terminals reaching 30.2% efficiency without concentration.

In 2017, a team of researchers at National Renewable Energy Laboratory (NREL), EPFL and CSEM (Switzerland) reported record one-sun efficiencies of 32.8% for dual-junction GaInP/GaAs solar cell devices. In addition, the dual-junction device was mechanically stacked with a Si solar cell, to achieve a record one-sun efficiency of 35.9% for triple-junction solar cells.