structural:summarization, structural:expansion
Nitrides and pnictides

Gallium reacts with ammonia at 1050 °C to form gallium nitride, GaN. Gallium also forms binary compounds with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). These compounds have the same structure as ZnS, and have important semiconducting properties. GaP, GaAs, and GaSb can be synthesized by the direct reaction of gallium with elemental phosphorus, arsenic, or antimony. They exhibit higher electrical conductivity than GaN. GaP can also be synthesized by reacting Ga O with phosphorus at low temperatures.

Gallium forms ternary nitrides; for example:

Similar compounds with phosphorus and arsenic are possible: Li GaP and Li GaAs. These compounds are easily hydrolyzed by dilute acids and water.