structural:reformatting, structural:expansion, quality:corruption
Preparation of semiconductor materials

Almost all of today's electronic technology involves the use of semiconductors, with the most important aspect being the integrated circuit (IC), which are found in desktops, laptops, scanners, cell-phones, and other electronic devices. Semiconductors for ICs are mass-produced. To create an ideal semiconducting material, chemical purity is paramount. Any small imperfection can have a drastic effect on how the semiconducting material behaves due to the scale at which the materials are used.

A high degree of crystalline perfection is also required, since faults in the crystal structure (such as dislocations, twins, and stacking faults) interfere with the semiconducting properties of the material. Crystalline faults are a major cause of defective semiconductor devices. The larger the crystal, the more difficult it is to achieve the necessary perfection. Current mass production processes use crystal ingots between 100 and 300 mm (3.9 and 11.8 in) in diameter, grown as cylinders and sliced into wafers.

There is a combination of processes that are used to prepare semiconducting materials for ICs. One process is called thermal oxidation, which forms silicon dioxide on the surface of the silicon. This is used as a gate insulator and field oxide. Other processes are called photomasks and photolithography. This process is what creates the patterns on the circuit in the integrated circuit. Ultraviolet light is used along with a photoresist layer to create a chemical change that generates the patterns for the circuit.

The etching is the next process that is required. The part of the silicon that was not covered by the photoresist layer from the previous step can now be etched. The main process typically used today is called plasma etching. Plasma etching usually involves an etch gas pumped in a low-pressure chamber to create plasma. A common etch gas is chlorofluorocarbon, or more commonly known Freon. A high radio-frequency voltage between the cathode and anode is what creates the plasma in the chamber. The silicon wafer is located on the cathode, which causes it to be hit by the positively charged ions that are released from the plasma. The result is silicon that is etched anisotropically.

The last process is called diffusion. This is the process that gives the semiconducting material its desired semiconducting properties. It is also known as doping. The process introduces an impure atom to the system, which creates the p–n junction. To get the impure atoms embedded in the silicon wafer, the wafer is first put in a 1,100 degree Celsius chamber. The atoms are injected in and eventually diffuse with the silicon. After the process is completed and the silicon has reached room temperature, the doping process is done and the semiconducting wafer is almost prepared.