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Silicon thin film

Silicon thin-film cells are mainly deposited by chemical vapor deposition (typically plasma-enhanced, PE-CVD) from silane gas and hydrogen gas. Depending on the deposition parameters, this can yield amorphous silicon (a-Si or a-Si:H), protocrystalline silicon or nanocrystalline silicon (nc-Si or nc-Si:H), also called microcrystalline silicon.

Amorphous silicon is the most well-developed thin film technology to-date. An amorphous silicon (a-Si) solar cell is made of non-crystalline or microcrystalline silicon. Amorphous silicon has a higher bandgap (1.7 eV) than crystalline silicon (c-Si) (1.1 eV), which means it absorbs the visible part of the solar spectrum more strongly than the higher power density infrared portion of the spectrum. The production of a-Si thin film solar cells uses glass as a substrate and deposits a very thin layer of silicon by plasma-enhanced chemical vapor deposition (PECVD).

Protocrystalline silicon with a low volume fraction of nanocrystalline silicon is optimal for high open-circuit voltage. Nc-Si has about the same bandgap as c-Si and nc-Si and a-Si can advantageously be combined in thin layers, creating a layered cell called a tandem cell. The top cell in a-Si absorbs the visible light and leaves the infrared part of the spectrum for the bottom cell in nc-Si.