stylistic:style_transfer, structural:summarization
Gallium arsenide thin film

The semiconductor material gallium arsenide (GaAs) is also used for single-crystalline thin film solar cells. Although GaAs cells are very expensive, they hold the world's record in efficiency for a single-junction solar cell at 28.8%. Typically fabricated on crystalline silicon wafer with a 41% fill factor, by moving to porous silicon fill factor can be increased to 56% with potentially reduced cost. Using less active GaAs material by fabricating nanowires is another potential pathway to cost reduction. GaAs is more commonly used in multijunction photovoltaic cells for concentrated photovoltaics (CPV, HCPV) and for solar panels on spacecraft, as the industry favours efficiency over cost for space-based solar power. Based on the previous literature and some theoretical analysis, there are several reasons why GaAs has such high power conversion efficiency. First, GaAs bandgap is 1.43ev which is almost ideal for solar cells. Second, because Gallium is a by-product of the smelting of other metals, GaAs cells are relatively insensitive to heat and it can keep high efficiency when temperature is quite high. Third, GaAs has the wide range of design options. Using GaAs as active layer in solar cell, engineers can have multiple choices of other layers which can better generate electrons and holes in GaAs.