linguistic:paraphrasing
MOS RAM

In 1957, Frosch and Derick were able to manufacture the first silicon dioxide field effect transistors at Bell Labs, the first transistors in which drain and source were adjacent at the surface. Subsequently, a team demonstrated a working MOSFET at Bell Labs 1960.

This led to the development of metal–oxide–semiconductor (MOS) memory by John Schmidt at Fairchild Semiconductor in 1964. In addition to higher speeds, MOS semiconductor memory was cheaper and consumed less power than magnetic core memory. The development of silicon-gate MOS integrated circuit (MOS IC) technology by Federico Faggin at Fairchild in 1968 enabled the production of MOS memory chips. MOS memory overtook magnetic core memory as the dominant memory technology in the early 1970s.

An integrated bipolar static random-access memory (SRAM) was invented by Robert H. Norman at Fairchild Semiconductor in 1963. It was followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964. SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data. Commercial use of SRAM began in 1965, when IBM introduced the SP95 memory chip for the System/360 Model 95.

Dynamic random-access memory (DRAM) allowed replacement of a 4 or 6-transistor latch circuit by a single transistor for each memory bit, greatly increasing memory density at the cost of volatility. Data was stored in the tiny capacitance of each transistor, and had to be periodically refreshed every few milliseconds before the charge could leak away. Toshiba 's Toscal BC-1411 electronic calculator, which was introduced in 1965, used a form of capacitive bipolar DRAM, storing 180-bit data on discrete memory cells, consisting of germanium bipolar transistors and capacitors. While it offered higher speeds than magnetic-core memory, bipolar DRAM could not compete with the lower price of the then dominant magnetic-core memory.

MOS technology is the basis for modern DRAM. In 1966, Dr. Robert H. Dennard at the IBM Thomas J. Watson Research Center was working on MOS memory. While examining the characteristics of MOS technology, he found it was capable of building capacitors, and that storing a charge or no charge on the MOS capacitor could represent the 1 and 0 of a bit, while the MOS transistor could control writing the charge to the capacitor. This led to his development of a single-transistor DRAM memory cell. In 1967, Dennard filed a patent under IBM for a single-transistor DRAM memory cell, based on MOS technology. The first commercial DRAM IC chip was the Intel 1103, which was manufactured on an 8 μm MOS process with a capacity of 1 kbit, and was released in 1970.

Synchronous dynamic random-access memory (SDRAM) was developed by Samsung Electronics. The first commercial SDRAM chip was the Samsung KM48SL2000, which had a capacity of 16 Mbit. It was introduced by Samsung in 1992, and mass-produced in 1993. The first commercial DDR SDRAM (double data rate SDRAM) memory chip was Samsung's 64 Mbit DDR SDRAM chip, released in June 1998. GDDR (graphics DDR) is a form of DDR SGRAM (synchronous graphics RAM), which was first released by Samsung as a 16 Mbit memory chip in 1998.