{{Nihongo|'''Isamu Akasaki'''|赤崎 勇|Akasaki Isamu|extra=født [[30. januar]] [[1929]], død [[1. april]] [[2021]]}} var en japansk ingeniør og fysiker, der var specialiseret i [[halvleder]]eteknologi. Han er bedst kendt for at opfinde den kraftige [[galliumnitrid]] ([[GaN]]) [[pn-overgang]] blå [[Lysdiode|LED]] i 1989 og den efterfølgende forbedrede udgave.<ref>{{cite web|url=http://jjap.jsap.jp/link?JJAP/45/9001/|title=Japanese Journal of Applied Physics|work=Jsap.jp|accessdate=2015-11-10|archive-url=https://web.archive.org/web/20120722041435/http://jjap.jsap.jp/link?JJAP%2F45%2F9001%2F|archive-date=22. juli 2012|url-status=dead}}</ref><ref>{{cite web|url=http://jjap.jsap.jp/link?JJAP/47/3781/|title=Japanese Journal of Applied Physics|work=jsap.jp|accessdate=2015-11-10|archive-url=https://web.archive.org/web/20120418221503/http://jjap.jsap.jp/link?JJAP%2F47%2F3781%2F|archive-date=18. april 2012|url-status=dead}}</ref><ref>{{cite journal | last=Amano | first=Hiroshi | last2=Kito | first2=Masahiro | last3=Hiramatsu | first3=Kazumasa | last4=Akasaki | first4=Isamu | title=P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) | journal=Japanese Journal of Applied Physics | publisher=Japan Society of Applied Physics | volume=28 | issue=Part 2, No. 12 | date=1989-12-20 | issn=0021-4922 | doi=10.1143/jjap.28.l2112 | pages=L2112–L2114| bibcode=1989JaJAP..28L2112A }}</ref><ref>{{cite journal | title=Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED | journal=Journal of Luminescence | publisher=Elsevier BV | volume=48-49 | year=1991 | issn=0022-2313 | doi=10.1016/0022-2313(91)90215-h | pages=666–670| last1=Isamu Akasaki | last2=Hiroshi Amano | last3=Masahiro Kito | last4=Kazumasa Hiramatsu | bibcode=1991JLum...48..666A }}</ref><ref>Isamu Akasaki, Hiroshi Amano, Kenji Itoh, Norikatsu Koide and Katsuhide Manabe: "GaN-based UV/blue light emitting devices", Inst. Phys. Conf. Ser. No.129, pp. 851-856, 1992</ref>
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