Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Asymmetry-induced resistive switching in Ag-Ag$_{2}$S-Ag memristors
  enabling a simplified atomic-scale memory design   Prevailing models of resistive switching arising from electrochemical
formation of conducting filaments across solid state ionic conductors commonly
attribute the observed polarity of the voltage-biased switching to the sequence
of the active and inert electrodes confining the resistive switching memory
cell. Here we demonstrate equivalent, stable switching behavior in metallic
Ag-Ag$_{2}$S-Ag nanojunctions at room temperature. Our experimental results and
numerical simulations reveal that the polarity of the switchings is solely
determined by the geometrical asymmetry of the electrode surfaces. By the
lithographical design of a proof of principle device we demonstrate the merits
of simplified fabrication of atomic-scale, robust planar Ag$_{2}$S memory
cells.

16
The categories of this paper are: stat
8
The categories of this paper are: hep-ex
13
The categories of this paper are: quant-ph
34
The categories of this paper are: chem-ph
0
The categories of this paper are: hep-ph
7
The categories of this paper are: hep-th
5
The categories of this paper are: gr-qc
30
The categories of this paper are: q-alg
9
The categories of this paper are: nlin
25
The categories of this paper are: patt-sol
18
The categories of this paper are: econ
37
The categories of this paper are: supr-con
29
The categories of this paper are: funct-an
22
The categories of this paper are: chao-dyn
26
The categories of this paper are: bayes-an
23
The categories of this paper are: solv-int