Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Tuning hole mobility of individual p-doped GaAs nanowires by uniaxial
  tensile stress   Strain engineering provides an effective way of tailoring the electronic and
optoelectronic properties of semiconductor nanomaterials and nanodevices,
giving rise to novel functionalities. Here, we present direct experimental
evidence of strain-induced modifications of hole mobility in individual GaAs
nanowires, using in situ transmission electron microscopy (TEM). The
conductivity of the nanowires varied with applied uniaxial tensile stress,
showing an initial decrease of ~5-20% up to a stress of 1~ 2 GPa, subsequently
increasing up to the elastic limit of the nanowires. This is attributed to a
hole mobility variation due to changes in the valence band structure caused by
stress and strain. The corresponding lattice strain in the nanowires was
quantified by in situ 4D-scanning TEM (STEM) and showed a complex spatial
distribution at all stress levels. Meanwhile, a significant red shift of the
band gap induced by the stress and strain was unveiled by monochromated
electron energy loss spectroscopy.

18
The categories of this paper are: econ
27
The categories of this paper are: comp-gas
32
The categories of this paper are: atom-ph
36
The categories of this paper are: cmp-lg
5
The categories of this paper are: gr-qc
15
The categories of this paper are: nucl-ex
0
The categories of this paper are: hep-ph
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The categories of this paper are: hep-lat
10
The categories of this paper are: q-bio
34
The categories of this paper are: chem-ph
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The categories of this paper are: eess
33
The categories of this paper are: plasm-ph
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The categories of this paper are: chao-dyn
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The categories of this paper are: hep-ex
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The categories of this paper are: acc-phys
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The categories of this paper are: q-alg