Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Quantum Efficiency and Oscillator Strength of InGaAs Quantum Dots for
  Single-Photon Sources emitting in the Telecommunication O-Band   We demonstrate experimental results based on time-resolved photoluminescence
spectroscopy to determine the oscillator strength (OS) and the internal quantum
efficiency (IQE) of InGaAs quantum dots (QDs). Using a strain-reducing layer
(SRL) these QDs can be employed for the manufacturing of single-photon sources
(SPS) emitting in the telecom O-Band. The OS and IQE are evaluated by
determining the radiative and non-radiative decay rate under variation of the
optical density of states at the position of the QD as proposed and applied in
J. Johansen et al. Phys. Rev. B 77, 073303 (2008) for InGaAs QDs emitting at
wavelengths below 1 $\mu$m. For this purpose, we perform measurements on a QD
sample for different thicknesses of the capping layer realized by a controlled
wet-chemical etching process. From numeric modelling the radiative and
nonradiative decay rates dependence on the capping layer thickness, we
determine an OS of 24.6 $\pm$ 3.2 and a high IQE of about (85 $\pm$ 10)% for
the long-wavelength InGaAs QDs.

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The categories of this paper are: comp-gas
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The categories of this paper are: chao-dyn
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The categories of this paper are: mtrl-th
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The categories of this paper are: hep-ex
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The categories of this paper are: solv-int
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The categories of this paper are: dg-ga
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The categories of this paper are: eess
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The categories of this paper are: math
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The categories of this paper are: alg-geom
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The categories of this paper are: hep-lat
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The categories of this paper are: q-alg
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The categories of this paper are: nucl-th
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The categories of this paper are: astro-ph
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The categories of this paper are: patt-sol
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The categories of this paper are: q-fin
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The categories of this paper are: nlin