Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Effect of crystallographic dislocations on the reverse performance of
  4H-SiC p-n diodes   A quantitative study was performed to investigate the impact of
crystallographic dislocation defects, 21 including screw dislocation, basal
plane dislocation, and threading edge dislocation, and their locations in 22
active and JTE region, on the reverse performance of 4H-SiC p-n diodes. It was
found that higher leakage 23 current in diodes is associated with basal plane
dislocations, while lower breakdown voltage is attributed to 24 screw
dislocations. The above influence increases in severity when the dislocation is
in the active region than 25 in the JTE region. Furthermore, due to the
closed-core nature, the impact of threading edge dislocation on the 26 reverse
performance of the p-n diodes is less severe than that of other dislocations
although its density is 27 much higher.

3
The categories of this paper are: physics
13
The categories of this paper are: quant-ph
12
The categories of this paper are: nucl-th
31
The categories of this paper are: ao-sci
18
The categories of this paper are: econ
32
The categories of this paper are: atom-ph
37
The categories of this paper are: supr-con
9
The categories of this paper are: nlin
7
The categories of this paper are: hep-th
25
The categories of this paper are: patt-sol
14
The categories of this paper are: math-ph
28
The categories of this paper are: alg-geom
29
The categories of this paper are: funct-an
30
The categories of this paper are: q-alg
5
The categories of this paper are: gr-qc
11
The categories of this paper are: hep-lat