Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: High-Mobility Holes in Dual-Gated WSe$_2$ Field-Effect Transistors   We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on
few-layer tungsten diselenide (WSe$_2$) using high work-function platinum
source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A
device topology with contacts underneath the WSe$_2$ results in $p$-FETs with
$I_{ON}$/$I_{OFF}$ ratios exceeding 10$^7$, and contacts that remain Ohmic down
to cryogenic temperatures. The output characteristics show current saturation
and gate tunable negative differential resistance. The devices show intrinsic
hole mobilities around 140 cm$^2$/Vs at room temperature, and approaching 4,000
cm$^2$/Vs at 2 K. Temperature-dependent transport measurements show a
metal-insulator transition, with an insulating phase at low densities, and a
metallic phase at high densities. The mobility shows a strong temperature
dependence consistent with phonon scattering, and saturates at low
temperatures, possibly limited by Coulomb scattering, or defects.

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The categories of this paper are: funct-an
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The categories of this paper are: gr-qc
16
The categories of this paper are: stat
2
The categories of this paper are: math
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The categories of this paper are: atom-ph
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The categories of this paper are: alg-geom
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The categories of this paper are: plasm-ph
3
The categories of this paper are: physics
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The categories of this paper are: bayes-an
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The categories of this paper are: q-fin
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The categories of this paper are: solv-int
14
The categories of this paper are: math-ph
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The categories of this paper are: supr-con
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The categories of this paper are: hep-ex
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The categories of this paper are: eess
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The categories of this paper are: hep-lat