Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Evaluation of the Sensitivity of RRAM Cells to Optical Fault Injection
  Attacks   Resistive Random Access Memory (RRAM) is a type of Non-Volatile Memory (NVM).
In this paper we investigate the sensitivity of the TiN/Ti/Al:HfO2/TiN-based
1T-1R RRAM cells implemented in a 250 nm CMOS IHP technology to the laser
irradiation in detail. Experimental results show the feasibility to influence
the state of the cells under laser irradiation, i.e. successful optical Fault
Injection. We focus on the selection of the parameters of the laser station and
their influence on the success of optical Fault Injections.

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The categories of this paper are: math-ph
32
The categories of this paper are: atom-ph
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The categories of this paper are: quant-ph
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The categories of this paper are: alg-geom
36
The categories of this paper are: cmp-lg
4
The categories of this paper are: cond-mat
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The categories of this paper are: acc-phys
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The categories of this paper are: q-alg
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The categories of this paper are: patt-sol
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The categories of this paper are: nucl-ex
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The categories of this paper are: math
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The categories of this paper are: plasm-ph
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The categories of this paper are: adap-org
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The categories of this paper are: gr-qc
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The categories of this paper are: mtrl-th
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The categories of this paper are: nlin