Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Drift-diffusion model for single layer transition metal dichalcogenide
  field-effect transistors   A physics-based model for the surface potential and drain current for
monolayer transition metal dichalcogenide (TMD) field-effect transistor (FET)
is presented. Taking into account the 2D density-of-states of the atomic layer
thick TMD and its impact on the quantum capacitance, a model for the surface
potential is presented. Next, considering a drift-diffusion mechanism for the
carrier transport along the monolayer TMD, an explicit expression for the drain
current has been derived. The model has been benchmarked with a measured
prototype transistor. Based on the proposed model, the device design window
targeting low-power applications is discussed.

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The categories of this paper are: plasm-ph
12
The categories of this paper are: nucl-th
18
The categories of this paper are: econ
8
The categories of this paper are: hep-ex
34
The categories of this paper are: chem-ph
37
The categories of this paper are: supr-con
23
The categories of this paper are: solv-int
31
The categories of this paper are: ao-sci
28
The categories of this paper are: alg-geom
32
The categories of this paper are: atom-ph
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The categories of this paper are: dg-ga
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The categories of this paper are: comp-gas
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The categories of this paper are: eess
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The categories of this paper are: adap-org
26
The categories of this paper are: bayes-an
22
The categories of this paper are: chao-dyn