Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Fabrication of p+ contact by thermally induced solid state regrowth of
  Al on p-type Ge crystal   Formation of p+ contact on Germanium is important for applications in diode
detector and other electronic devices. In this work, thermally deposited Al on
Ge crystal is annealed at 350oC followed by slow cooling for solid-state
regrowth of Al-Ge p+ contact on Ge. Depth profile analysis by secondary ion
mass spectrometry (SIMS) is carried out to investigate the occurrence of Al and
Ge along the depth of the regrown Al-Ge layer. Evidence of regrowth is observed
due to inter-diffusion of both Ge and Al across the layers although Ge
diffusion in Al layer is found to be more prevalent. Thickness of the
evaporated Al layer is varied to understand the diffusion profile of Al, Ge and
estimate the depth of Al incorporation in Ge crystal underneath. Hall
measurement at different depth of Al-Ge regrown layer reveals that Al impurity
induces p+ doping in p-type Ge and its concentration gradually reduces towards
the Ge crystal. Top surface of the Al-Ge layer exhibits lowest sheet resistance
that varies with the thickness of the as deposited Al layer.

17
The categories of this paper are: q-fin
30
The categories of this paper are: q-alg
21
The categories of this paper are: adap-org
37
The categories of this paper are: supr-con
3
The categories of this paper are: physics
31
The categories of this paper are: ao-sci
16
The categories of this paper are: stat
28
The categories of this paper are: alg-geom
12
The categories of this paper are: nucl-th
6
The categories of this paper are: astro-ph
19
The categories of this paper are: eess
23
The categories of this paper are: solv-int
1
The categories of this paper are: cs
18
The categories of this paper are: econ
2
The categories of this paper are: math
35
The categories of this paper are: mtrl-th