Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Nanoscale SOI-MOSFETs with Electrically Induced Source/Drain Extension:
  Novel attributes and Design considerations for Suppressed Short-channel
  Effects   Design considerations for a below 100 nm channel length SOI MOSFET with
electrically induced shallow source/drain junctions are presented. Our
simulation results demonstrate that the application of induced source/drain
extensions to the SOI MOSFET will successfully control the SCEs and improve the
breakdown voltage even for channel lengths less than 50 nm. We conclude that if
the side gate length equals the main gate length, the hot electron effect
diminishes optimally.

23
The categories of this paper are: solv-int
9
The categories of this paper are: nlin
16
The categories of this paper are: stat
10
The categories of this paper are: q-bio
37
The categories of this paper are: supr-con
15
The categories of this paper are: nucl-ex
24
The categories of this paper are: dg-ga
32
The categories of this paper are: atom-ph
17
The categories of this paper are: q-fin
21
The categories of this paper are: adap-org
27
The categories of this paper are: comp-gas
33
The categories of this paper are: plasm-ph
35
The categories of this paper are: mtrl-th
14
The categories of this paper are: math-ph
29
The categories of this paper are: funct-an
11
The categories of this paper are: hep-lat