Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Fabrication process and failure analysis for robust quantum dots in
  silicon   We present an improved fabrication process for overlapping aluminum gate
quantum dot devices on Si/SiGe heterostructures that incorporates
low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip
electrostatic discharge (ESD) protection, and an optimized interconnect process
for thermal budget considerations. This process reduces gate-to-gate leakage,
damage from ESD, dewetting of aluminum, and formation of undesired alloys in
device interconnects. Additionally, cross-sectional scanning transmission
electron microscopy (STEM) images elucidate gate electrode morphology in the
active region as device geometry is varied. We show that overlapping aluminum
gate layers homogeneously conform to the topology beneath them, independent of
gate geometry, and identify critical dimensions in the gate geometry where
pattern transfer becomes non-ideal, causing device failure.

29
The categories of this paper are: funct-an
32
The categories of this paper are: atom-ph
27
The categories of this paper are: comp-gas
18
The categories of this paper are: econ
10
The categories of this paper are: q-bio
16
The categories of this paper are: stat
7
The categories of this paper are: hep-th
22
The categories of this paper are: chao-dyn
9
The categories of this paper are: nlin
35
The categories of this paper are: mtrl-th
33
The categories of this paper are: plasm-ph
0
The categories of this paper are: hep-ph
28
The categories of this paper are: alg-geom
12
The categories of this paper are: nucl-th
30
The categories of this paper are: q-alg
19
The categories of this paper are: eess