Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Multiscale Modeling of Nanowire-based Schottky-Barrier Field-Effect
  Transistors for Sensor Applications   We present a theoretical framework for the calculation of charge transport
through nanowire-based Schottky-barrier field-effect transistors that is
conceptually simple but still captures the relevant physical mechanisms of the
transport process. Our approach combines two approaches on different length
scales: (1) the finite elements method is used to model realistic device
geometries and to calculate the electrostatic potential across the
Schottky-barrier by solving the Poisson equation, and (2) the Landauer approach
combined with the method of non-equilibrium Green's functions is employed to
calculate the charge transport through the device. Our model correctly
reproduces typical I-V characteristics of field-effect transistors and the
dependence of the saturated drain current on the gate field and the device
geometry are in good agreement with experiments. Our approach is suitable for
one-dimensional Schottky-barrier field-effect transistors of arbitrary device
geometry and it is intended to be a simulation platform for the development of
nanowire-based sensors.

15
The categories of this paper are: nucl-ex
3
The categories of this paper are: physics
36
The categories of this paper are: cmp-lg
23
The categories of this paper are: solv-int
24
The categories of this paper are: dg-ga
6
The categories of this paper are: astro-ph
21
The categories of this paper are: adap-org
22
The categories of this paper are: chao-dyn
25
The categories of this paper are: patt-sol
7
The categories of this paper are: hep-th
12
The categories of this paper are: nucl-th
13
The categories of this paper are: quant-ph
5
The categories of this paper are: gr-qc
16
The categories of this paper are: stat
0
The categories of this paper are: hep-ph
35
The categories of this paper are: mtrl-th