Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: beta-Ga2O3 Double Gate Junctionless FET with an Efficient Volume
  Depletion Region   This paper presents a new \b{eta}-Ga2O3 junctionless double gate
Metal-Oxide-Field-Semiconductor-Effect-Transistor (\b{eta}DG-JL-FET) that a P+
packet embedded in the oxide layer (PO-\b{eta}DG-JL-FET) for high-voltage
applications. Our goal is to achieve an efficient volume depletion region by
placing a P+ layer of silicon. We show that the proposed structure has a
subthreshold swing ~ 64 mV/decade and it suppressed the band to band tunneling
(BTBT) phenomenon. Also, the PO-\b{eta}DG-JL-FET structure has a high Ion/Ioff
~ 1.3e15. The embedded layer reduces the off-current (IOFF) by ~ 10-4, while
the on-current (ION) reduces slightly. Besides, we show that the proposed
structure has acceptable Ioff value in a range of gate work functions which
help us to the optimization of designs in terms of area, power gain, and
leakage current. The leakage current of the proposed structure is ~ 7e-17 A in
400 K temperature. Furthermore, the fabrication process steps of the proposed
structure will be investigated.

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The categories of this paper are: alg-geom
24
The categories of this paper are: dg-ga
2
The categories of this paper are: math
35
The categories of this paper are: mtrl-th
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The categories of this paper are: funct-an
14
The categories of this paper are: math-ph
37
The categories of this paper are: supr-con
22
The categories of this paper are: chao-dyn
11
The categories of this paper are: hep-lat
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The categories of this paper are: eess
8
The categories of this paper are: hep-ex
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The categories of this paper are: bayes-an
13
The categories of this paper are: quant-ph
15
The categories of this paper are: nucl-ex
4
The categories of this paper are: cond-mat
32
The categories of this paper are: atom-ph