Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Spin-dependent transport properties of a GaMnAs-based vertical spin
  metal-oxide- semiconductor field-effect transistor structure   We fabricate a vertical spin metal-oxide-semiconductor field-effect
transistor (spin-MOSFET) structure, which is composed of an epitaxial
single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs
source/drain, and investigate its spin-dependent transport properties. We
modulate the drain-source current IDS by ~+ or -0.5 % with a gate-source
voltage of + or -10.8 V and also modulate IDS by up to 60 % with changing the
magnetization configuration of the GaMnAs source/drain at 3.5 K. The
magnetoresistance ratio is more than two orders of magnitude higher than that
obtained in the previous studies on spin MOSFETs. Our result shows that a
vertical structure is one of the hopeful candidates for spin MOSFET when the
device size is reduced to a sub-micron or nanometer scale.

19
The categories of this paper are: eess
32
The categories of this paper are: atom-ph
22
The categories of this paper are: chao-dyn
29
The categories of this paper are: funct-an
2
The categories of this paper are: math
16
The categories of this paper are: stat
0
The categories of this paper are: hep-ph
36
The categories of this paper are: cmp-lg
28
The categories of this paper are: alg-geom
20
The categories of this paper are: acc-phys
15
The categories of this paper are: nucl-ex
1
The categories of this paper are: cs
26
The categories of this paper are: bayes-an
3
The categories of this paper are: physics
37
The categories of this paper are: supr-con
8
The categories of this paper are: hep-ex