Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Gapped Electronic Structure of Epitaxial Stanene on InSb(111)   Stanene (single-layer grey tin), with an electronic structure akin to that of
graphene but exhibiting a much larger spin-orbit gap, offers a promising
platform for room-temperature electronics based on the quantum spin Hall (QSH)
effect. This material has received much theoretical attention, but a suitable
substrate for stanene growth that results in an overall gapped electronic
structure has been elusive; a sizable gap is necessary for room-temperature
applications. Here, we report a study of stanene epitaxially grown on the
(111)B-face of indium antimonide (InSb). Angle-resolved photoemission
spectroscopy (ARPES) measurements reveal a gap of 0.44 eV, in agreement with
our first-principles calculations. The results indicate that stanene on
InSb(111) is a strong contender for electronic QSH applications.

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The categories of this paper are: patt-sol
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The categories of this paper are: acc-phys
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The categories of this paper are: alg-geom
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The categories of this paper are: adap-org
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The categories of this paper are: chem-ph
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The categories of this paper are: math-ph
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The categories of this paper are: nucl-th
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The categories of this paper are: eess
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The categories of this paper are: hep-lat
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The categories of this paper are: astro-ph
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The categories of this paper are: stat
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The categories of this paper are: q-alg
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The categories of this paper are: bayes-an
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The categories of this paper are: quant-ph
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The categories of this paper are: hep-ex
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The categories of this paper are: dg-ga