Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Modeling of Radiation Damage Effects in Silicon Detectors at High
  Fluences HL-LHC with Sentaurus TCAD   In this work we propose the application of an enhanced radiation damage model
based on the introduction of deep level traps / recombination centers suitable
for device level numerical simulation of silicon detectors at very high
fluences (e.g. 2.0x10E16 1 MeV equivalent neutrons/cm2). We present the
comparison between simulation results and experimental data for p-type
substrate structures in different operating conditions (temperature and biasing
voltages) for fluences up to 2.2x10E16 neutrons/cm2. The good agreement between
simulation findings and experimental measurements fosters the application of
this modeling scheme to the optimization of the next silicon detectors to be
used at HL-LHC.

13
The categories of this paper are: quant-ph
30
The categories of this paper are: q-alg
7
The categories of this paper are: hep-th
22
The categories of this paper are: chao-dyn
9
The categories of this paper are: nlin
32
The categories of this paper are: atom-ph
25
The categories of this paper are: patt-sol
33
The categories of this paper are: plasm-ph
37
The categories of this paper are: supr-con
14
The categories of this paper are: math-ph
21
The categories of this paper are: adap-org
0
The categories of this paper are: hep-ph
2
The categories of this paper are: math
6
The categories of this paper are: astro-ph
28
The categories of this paper are: alg-geom
5
The categories of this paper are: gr-qc