Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Impact of Edge States on Device Performance of Phosphorene
  Heterojunction Tunneling Field Effect Transistors   Black phosphorus (BP) tunneling transistors (TFETs) using heterojunction (He)
are investigated by atomistic quantum transport simulations. It is observed
that edge states have a great impact on transport characteristics of BP
He-TFETs, which result in the potential pinning effect and deteriorate the gate
control. While, on-state current can be effectively enhanced by using hydrogen
to saturate the edge dangling bonds in BP He-TFETs, in which edge states are
quenched. By extending layered BP with a smaller band gap to the channel region
and modulating the BP thickness, device performance of BP He-TFETs can be
further optimized and fulfill the requirements of the international technology
road-map for semiconductors (ITRS) 2013 for low power applications. In 15 nm
3L-1L and 4L-1L BP He-TFETs along armchair direction on-state current can reach
above 10$^3$ $\mu$A/$\mu$m with the fixed off-state current of 10 $pA/\mu$m. It
is also found that ambipolar effect can be effectively suppressed in BP
He-TFETs.

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The categories of this paper are: q-bio
17
The categories of this paper are: q-fin
0
The categories of this paper are: hep-ph
13
The categories of this paper are: quant-ph
28
The categories of this paper are: alg-geom
32
The categories of this paper are: atom-ph
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The categories of this paper are: hep-th
30
The categories of this paper are: q-alg
8
The categories of this paper are: hep-ex
2
The categories of this paper are: math
27
The categories of this paper are: comp-gas
35
The categories of this paper are: mtrl-th
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The categories of this paper are: cmp-lg
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The categories of this paper are: adap-org
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The categories of this paper are: solv-int
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The categories of this paper are: chao-dyn