Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Large-signal model of 2DFETs: compact modeling of terminal charges and
  intrinsic capacitances   We present a physics-based circuit-compatible model for double-gated
two-dimensional semiconductor based field effect transistors, which provides
explicit expressions for the drain current, terminal charges and intrinsic
capacitances. The drain current model is based on the drift-diffusion mechanism
for the carrier transport and considers Fermi-Dirac statistics coupled with an
appropriate field-effect approach. The terminal charge and intrinsic
capacitance models are calculated adopting a Ward-Dutton linear charge
partition scheme that guarantees charge-conservation. It has been implemented
in Verilog-A to make it compatible with standard circuit simulators. In order
to benchmark the proposed modeling framework we also present experimental DC
and high-frequency measurements of a purposely fabricated monolayer MoS2 FET
showing excellent agreement between the model and the experiment and thus
demonstrating the capabilities of the combined approach to predict the
performance of 2DFETs.

27
The categories of this paper are: comp-gas
30
The categories of this paper are: q-alg
16
The categories of this paper are: stat
14
The categories of this paper are: math-ph
32
The categories of this paper are: atom-ph
31
The categories of this paper are: ao-sci
28
The categories of this paper are: alg-geom
22
The categories of this paper are: chao-dyn
11
The categories of this paper are: hep-lat
12
The categories of this paper are: nucl-th
1
The categories of this paper are: cs
8
The categories of this paper are: hep-ex
21
The categories of this paper are: adap-org
0
The categories of this paper are: hep-ph
9
The categories of this paper are: nlin
34
The categories of this paper are: chem-ph