Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Gate-controlled reversible rectifying behaviour in tunnel contacted
  atomically-thin MoS$_{2}$ transistor   Atomically-thin 2D semiconducting materials integrated into van der Waals
heterostructures have enabled architectures that hold great promise for next
generation nanoelectronics. However, challenges still remain to enable their
full acceptance as compliant materials for integration in logic devices. Two
key-components to master are the barriers at metal/semiconductor interfaces and
the mobility of the semiconducting channel, which endow the building-blocks of
${pn}$ diode and field effect transistor. Here, we have devised a reverted
stacking technique to intercalate a wrinkle-free h-BN tunnel layer between
MoS$_{2}$ channel and contacting electrodes. Vertical tunnelling of electrons
therefore makes it possible to suppress the Schottky barriers and Fermi level
pinning, leading to homogeneous gate-control of the channel chemical potential
across the bandgap edges. The observed unprecedented features of ambipolar
${pn}$ to ${np}$ diode, which can be reversibly gate tuned, paves the way for
future logic applications and high performance switches based on atomically
thin semiconducting channel.

16
The categories of this paper are: stat
11
The categories of this paper are: hep-lat
10
The categories of this paper are: q-bio
18
The categories of this paper are: econ
1
The categories of this paper are: cs
20
The categories of this paper are: acc-phys
19
The categories of this paper are: eess
23
The categories of this paper are: solv-int
27
The categories of this paper are: comp-gas
34
The categories of this paper are: chem-ph
13
The categories of this paper are: quant-ph
6
The categories of this paper are: astro-ph
21
The categories of this paper are: adap-org
32
The categories of this paper are: atom-ph
33
The categories of this paper are: plasm-ph
36
The categories of this paper are: cmp-lg