Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Graphenic Carbon-Silicon Contacts for Reliability Improvement of
  Metal-Silicon Junctions   Contact resistance and thermal degradation of metal-silicon contacts are
challenges in nanoscale CMOS as well as in power device applications. Titanium
silicide (TiSi) contacts are commonly used metal-silicon contacts, but are
known to diffuse into the active region under high current stress. In this
paper we show that a graphenic carbon (C) contact deposited on n-type silicon
(C-Si) by CVD, has the same low Schottky barrier height of 0.45 eV as TiSi, but
a much improved reliability against high current stress. The C-Si contact is
over 100 million times more stable against high current stress pulses than the
conventionally used TiSi junction. The C-Si contact properties even show
promise to establish an ultra-low, high temperature stable contact resistance.
The finding has important consequences for the enhancement of reliability in
power devices as well as in Schottky-diodes and electrical contacts to silicon
in general.

31
The categories of this paper are: ao-sci
0
The categories of this paper are: hep-ph
20
The categories of this paper are: acc-phys
21
The categories of this paper are: adap-org
25
The categories of this paper are: patt-sol
13
The categories of this paper are: quant-ph
9
The categories of this paper are: nlin
33
The categories of this paper are: plasm-ph
2
The categories of this paper are: math
10
The categories of this paper are: q-bio
5
The categories of this paper are: gr-qc
17
The categories of this paper are: q-fin
35
The categories of this paper are: mtrl-th
23
The categories of this paper are: solv-int
29
The categories of this paper are: funct-an
16
The categories of this paper are: stat