Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Two-Dimensional h-BN and MoS2 as Diffusion Barriers for Ultra-Scaled
  Copper Interconnects   Copper interconnects in modern integrated circuits require ultra-thin
barriers to prevent intermixing of Cu with surrounding dielectric materials.
Conventional barriers rely on metals like TaN, however their finite thickness
reduces the cross-sectional area and significantly increases the resistivity of
nanoscale interconnects. In this study, a new class of two-dimensional (2D) Cu
diffusion barriers, hexagonal boron nitride (h-BN) and molybdenum disulfide
(MoS2), is demonstrated for the first time. Using time-dependent dielectric
breakdown measurements and scanning transmission electron microscopy coupled
with energy dispersive X-ray spectroscopy and electron energy loss
spectroscopy, these 2D materials are shown to be promising barrier solutions
for ultra-scaled interconnect technology. The predicted lifetime of devices
with directly deposited 2D barriers can achieve three orders of magnitude
improvement compared to control devices without barriers.

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The categories of this paper are: nlin
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The categories of this paper are: plasm-ph
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The categories of this paper are: gr-qc
27
The categories of this paper are: comp-gas
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The categories of this paper are: q-fin
1
The categories of this paper are: cs
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The categories of this paper are: quant-ph
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The categories of this paper are: chem-ph
0
The categories of this paper are: hep-ph
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The categories of this paper are: ao-sci
37
The categories of this paper are: supr-con
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The categories of this paper are: solv-int
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The categories of this paper are: bayes-an
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The categories of this paper are: adap-org
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The categories of this paper are: math-ph
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The categories of this paper are: hep-ex