Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Top-gated graphene field-effect-transistors formed by decomposition of
  SiC   Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on
thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated.
Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional
hexagonal arrangement of carbon atoms with the correct lattice vectors,
observed by high-resolution scanning tunneling microscopy, confirms the
formation of multiple graphene layers on top of the SiC substrates. The
observation of n-type and p-type transition further verifies Dirac Fermions
unique transport properties in graphene layers. The measured electron and hole
mobility on these fabricated graphene FETs are as high as 5400 cm2/Vs and 4400
cm2/Vs respectively, which are much larger than the corresponding values from
conventional SiC or silicon.

27
The categories of this paper are: comp-gas
3
The categories of this paper are: physics
26
The categories of this paper are: bayes-an
24
The categories of this paper are: dg-ga
17
The categories of this paper are: q-fin
31
The categories of this paper are: ao-sci
20
The categories of this paper are: acc-phys
28
The categories of this paper are: alg-geom
21
The categories of this paper are: adap-org
35
The categories of this paper are: mtrl-th
6
The categories of this paper are: astro-ph
33
The categories of this paper are: plasm-ph
30
The categories of this paper are: q-alg
9
The categories of this paper are: nlin
34
The categories of this paper are: chem-ph
37
The categories of this paper are: supr-con