Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: p-Diamond, Si, GaN and InGaAs TeraFETs   p-diamond field effect transistors (FETs) featuring large effective mass,
long momentum relaxation time and high carrier mobility are a superb candidate
for plasmonic terahertz (THz) applications. Previous studies have shown that
p-diamond plasmonic THz FETs (TeraFETs) could operate in plasmonic resonant
mode at a low frequency window of 200 GHz to ~600 GHz, thus showing promising
potential for beyond 5G sub-THz applications. In this work, we explore the
advantages of p-diamond transistors over n-diamond, Si, GaN and InGaAs TeraFETs
and estimate the minimum mobility required for the resonant plasmons. Our
numerical simulation shows that the p-diamond TeraFET has a relatively low
minimum resonant mobility, and thus could enable resonant detection. The
diamond response characteristics can be adjusted by changing operating
temperature. A decrease of temperature from 300 K to 77 K improves the
detection performance of TeraFETs. At both room temperature and 77 K, the
p-diamond TeraFET presents a high detection sensitivity in a large dynamic
range. When the channel length is reduced to 20 nm, the p-diamond TeraFET
exhibits the highest DC response among all types of TeraFETs in a large
frequency window.

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The categories of this paper are: math
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The categories of this paper are: supr-con
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The categories of this paper are: math-ph
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The categories of this paper are: astro-ph
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The categories of this paper are: bayes-an
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The categories of this paper are: gr-qc
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The categories of this paper are: econ
13
The categories of this paper are: quant-ph
16
The categories of this paper are: stat
34
The categories of this paper are: chem-ph
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The categories of this paper are: q-fin
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The categories of this paper are: chao-dyn
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The categories of this paper are: plasm-ph
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The categories of this paper are: hep-ph
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The categories of this paper are: adap-org
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The categories of this paper are: q-alg