Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Accumulation-mode two-dimensional field-effect transistor: Operation
  mechanism and thickness scaling rule   Understanding the operation mode of a two-dimensional (2D) material-based
field-effect transistor (FET) is one of the most essential issues in the study
of electronics and physics. The existing Schottky barrier-FET model for devices
with global back gate and metallic contacts overemphasizes the metal-2D contact
effect, and the widely observed residual conductance cannot be explained by
this model. Here, an accumulation-mode FET model, which directly reveals 2D
channel transport properties, is developed based on a partial top-gate MoS2 FET
with metallic contacts and a channel thickness of 0.65~118 nm. The operation
mechanism of an accumulation-mode FET is validated and clarified by carefully
performed capacitance measurements. A depletion capacitance-quantum capacitance
transition is observed. After the analysis of the MoS2 accumulation-mode FET,
we have confirmed that most 2D-FETs show accumulation-mode behavior. The
universal thickness scaling rule of 2D-FETs is then proposed, which provides
guidance for future research on 2D materials.

16
The categories of this paper are: stat
37
The categories of this paper are: supr-con
17
The categories of this paper are: q-fin
14
The categories of this paper are: math-ph
1
The categories of this paper are: cs
29
The categories of this paper are: funct-an
33
The categories of this paper are: plasm-ph
18
The categories of this paper are: econ
15
The categories of this paper are: nucl-ex
28
The categories of this paper are: alg-geom
23
The categories of this paper are: solv-int
5
The categories of this paper are: gr-qc
32
The categories of this paper are: atom-ph
2
The categories of this paper are: math
13
The categories of this paper are: quant-ph
20
The categories of this paper are: acc-phys