Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx
  Contacts   The development of low-resistance source/drain contacts to transition metal
dichalcogenides (TMDCs) is crucial for the realization of high-performance
logic components. In particular, efficient hole contacts are required for the
fabrication of p-type transistors with MoS2, a model TMDC. Previous studies
have shown that the Fermi level of elemental metals is pinned close to the
conduction band of MoS2, thus resulting in large Schottky barrier heights for
holes with limited hole injection from the contacts. Here, we show that
substoichiometric molybdenum trioxide (MoOx, x<3), a high workfunction
material, acts as an efficient hole injection layer to MoS2 and WSe2. In
particular, we demonstrate MoS2 p-type field-effect transistors and diodes by
using MoOx contacts. We also show drastic on-current improvement for p-type
WSe2 FETs with MoOx contacts over devices made with Pd contacts, which is the
prototypical metal used for hole injection. The work presents an important
advance in contact engineering of TMDCs and will enable future exploration of
their performance limits and intrinsic transport properties.

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The categories of this paper are: hep-th
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The categories of this paper are: quant-ph
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The categories of this paper are: cmp-lg
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The categories of this paper are: hep-ex
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The categories of this paper are: stat
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The categories of this paper are: astro-ph
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The categories of this paper are: q-bio
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The categories of this paper are: dg-ga
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The categories of this paper are: alg-geom
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The categories of this paper are: eess
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The categories of this paper are: bayes-an
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The categories of this paper are: physics
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The categories of this paper are: chao-dyn
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The categories of this paper are: hep-lat
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The categories of this paper are: chem-ph
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The categories of this paper are: comp-gas