Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Temperature dependent characteristics of GaSb p-channel MOSFETs with
  Si-implanted source and drain   GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric
and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal
conditions are optimized for the source/drain impurity activation. Temperature
dependent electrical characteristics are investigated. Different electrical
behaviors are observed in two different temperature regions and the mechanisms
underneath are proposed. Off-state drain current is generation current
dominated in the low temperature regions and is diffusion current dominated in
the high temperature regions.

28
The categories of this paper are: alg-geom
25
The categories of this paper are: patt-sol
31
The categories of this paper are: ao-sci
9
The categories of this paper are: nlin
21
The categories of this paper are: adap-org
37
The categories of this paper are: supr-con
18
The categories of this paper are: econ
2
The categories of this paper are: math
23
The categories of this paper are: solv-int
33
The categories of this paper are: plasm-ph
7
The categories of this paper are: hep-th
14
The categories of this paper are: math-ph
24
The categories of this paper are: dg-ga
27
The categories of this paper are: comp-gas
34
The categories of this paper are: chem-ph
20
The categories of this paper are: acc-phys