Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Observation of reduced 1/f noise in Graphene field effect transistors on
  Boron Nitride substrates   We have investigated the low frequency (f) flicker (also called 1/f) noise of
single-layer graphene devices on h-BN (placed on SiO2/Si) along with those on
SiO2/Si. We observe that the devices fabricated on h-BN have on average one
order of magnitude lower noise amplitude compared with devices fabricated on
SiO2/Si. We associate this noise reduction to the lower densities of impurities
and trap sites in h-BN than in SiO2. Furthermore, the gate voltage dependent
noise amplitude shows a broad maximum at Dirac point for devices on h-BN, in
contrast to the M-shaped behavior showing a minimum at Dirac point for devices
on SiO2, consistent with the reduced charge inhomogeneity (puddles) for
graphene on h-BN. This study demonstrates that the use of h-BN as a substrate
or dielectric can be a simple and efficient noise reduction technique valuable
for electronic applications of graphene and other nanomaterials.

35
The categories of this paper are: mtrl-th
9
The categories of this paper are: nlin
23
The categories of this paper are: solv-int
13
The categories of this paper are: quant-ph
25
The categories of this paper are: patt-sol
5
The categories of this paper are: gr-qc
8
The categories of this paper are: hep-ex
33
The categories of this paper are: plasm-ph
3
The categories of this paper are: physics
31
The categories of this paper are: ao-sci
11
The categories of this paper are: hep-lat
34
The categories of this paper are: chem-ph
18
The categories of this paper are: econ
19
The categories of this paper are: eess
24
The categories of this paper are: dg-ga
29
The categories of this paper are: funct-an