Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D   In this paper, we have experimentally demonstrated, for the first time, III-V
4D transistors with vertically stacked InGaAs nanowire (NW) channels and
gate-all-around (GAA) architecture. Novel process technology enabling the
transition from 3D to 4D structure has been developed and summarized. The
successful fabrication of InGaAs lateral and vertical NW arrays has led to 4x
increase in MOSFET drive current. The top-down technology developed in this
paper has opened a viable pathway towards future low-power logic and RF
transistors with high-density III-V NWs.

35
The categories of this paper are: mtrl-th
0
The categories of this paper are: hep-ph
26
The categories of this paper are: bayes-an
7
The categories of this paper are: hep-th
12
The categories of this paper are: nucl-th
3
The categories of this paper are: physics
24
The categories of this paper are: dg-ga
17
The categories of this paper are: q-fin
2
The categories of this paper are: math
34
The categories of this paper are: chem-ph
28
The categories of this paper are: alg-geom
19
The categories of this paper are: eess
27
The categories of this paper are: comp-gas
15
The categories of this paper are: nucl-ex
18
The categories of this paper are: econ
30
The categories of this paper are: q-alg