Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Multi-bit MRAM storage cells utilizing serially connected perpendicular
  magnetic tunnel junctions   Serial connection of multiple memory cells using perpendicular magnetic
tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access
memory (MRAM) storage density. Multi-bit storage element is designed using
pMTJs fabricated on a single wafer stack, with a serial connections realized
using top-to-bottom vias. Tunneling magnetoreistance effect above 130%, current
induced magnetization switching in zero external magnetic field and stability
diagram analysis of single, two-bit and three-bit cells are presented together
with thermal stability. The proposed design is easy to manufacture and can lead
to increase capacity of future MRAM devices.

14
The categories of this paper are: math-ph
27
The categories of this paper are: comp-gas
23
The categories of this paper are: solv-int
15
The categories of this paper are: nucl-ex
2
The categories of this paper are: math
16
The categories of this paper are: stat
26
The categories of this paper are: bayes-an
18
The categories of this paper are: econ
9
The categories of this paper are: nlin
37
The categories of this paper are: supr-con
32
The categories of this paper are: atom-ph
36
The categories of this paper are: cmp-lg
24
The categories of this paper are: dg-ga
21
The categories of this paper are: adap-org
29
The categories of this paper are: funct-an
28
The categories of this paper are: alg-geom