Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Group-III assisted catalyst-free growth of InGaAs nanowires and the
  formation of quantum dots   Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam
Epitaxy growth method is studied in dependence of growth temperature, with the
objective of maximizing the indium incorporation. Nanowire growth was achieved
for growth temperatures as low as 550{\deg}C. The incorporation of indium was
studied by low temperature micro-photoluminescence spectroscopy, Raman
spectroscopy and electron energy loss spectroscopy. The results show that the
incorporation of indium lowering the growth temperature does not have an effect
in increasing the indium concentration in the bulk of the nanowire, which is
limited to 3-5%. For growth temperatures below 575{\deg}C, indium rich regions
form at the surface of the nanowires as a consequence of the radial growth.
This results in the formation of quantum dots, which exhibit extremely sharp
luminescence.

28
The categories of this paper are: alg-geom
5
The categories of this paper are: gr-qc
23
The categories of this paper are: solv-int
19
The categories of this paper are: eess
33
The categories of this paper are: plasm-ph
37
The categories of this paper are: supr-con
36
The categories of this paper are: cmp-lg
14
The categories of this paper are: math-ph
9
The categories of this paper are: nlin
35
The categories of this paper are: mtrl-th
12
The categories of this paper are: nucl-th
2
The categories of this paper are: math
7
The categories of this paper are: hep-th
16
The categories of this paper are: stat
21
The categories of this paper are: adap-org
22
The categories of this paper are: chao-dyn