Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Atomistic Aspects of Diffusion and Growth on the Si and Ge (111)
  Surfaces   The stability of interfaces and the mechanisms of thin film growth on
semiconductors are issues of central importance in electronic devices. These
issues can only be understood through detailed study of the relevant
microscopic processes. Experimental studies are able to provide detailed,
atomic scale information for model systems. Theoretical analysis of
experimental results is essential in explaining certain surprising observations
and in providing guidance for optimizing conditions and methods of growth. We
review recent theoretical work on the diffusion of adatoms, the structure of
adsorbate monolayers, and their implications for growth on the Si and Ge (111)
surfaces. The theoretical analysis consists of first-principles calculations of
the total-energy and entropy factors for stable, metastable and saddle-point
configurations. These calculations are supplemented by Monte Carlo simulations
of simple models that afford direct contact with experimental observations.

9
The categories of this paper are: nlin
21
The categories of this paper are: adap-org
17
The categories of this paper are: q-fin
1
The categories of this paper are: cs
6
The categories of this paper are: astro-ph
27
The categories of this paper are: comp-gas
15
The categories of this paper are: nucl-ex
31
The categories of this paper are: ao-sci
11
The categories of this paper are: hep-lat
18
The categories of this paper are: econ
8
The categories of this paper are: hep-ex
29
The categories of this paper are: funct-an
33
The categories of this paper are: plasm-ph
2
The categories of this paper are: math
5
The categories of this paper are: gr-qc
26
The categories of this paper are: bayes-an