Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Simulation of Arsenic Diffusion During Rapid Thermal Annealing of
  Silicon Layers Doped with Low-Energy High-Dose Ion Implantation   The model of transient enhanced diffusion of ion-implanted As is formulated
and the finite-difference method for numerical solution of the system of
equations obtained is developed. The nonuniform distribution of point defects
near the interface and more accurate description of arsenic clustering are
simultaneously taking into account. Simulation of As diffusion during rapid
annealing gives a reasonable agreement with the experimental data.
  Keywords: diffusion; clusters; ion implantation; arsenic; silicon
  PACS: 66.30.Jt

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The categories of this paper are: ao-sci
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The categories of this paper are: chao-dyn
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The categories of this paper are: cs
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The categories of this paper are: physics
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The categories of this paper are: hep-th
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The categories of this paper are: patt-sol
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The categories of this paper are: nlin
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The categories of this paper are: eess
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The categories of this paper are: nucl-th
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The categories of this paper are: alg-geom
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The categories of this paper are: econ
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The categories of this paper are: q-fin
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The categories of this paper are: astro-ph
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The categories of this paper are: nucl-ex
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The categories of this paper are: stat
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The categories of this paper are: cmp-lg