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# 1 Introduction

## 1 Introduction

According to idea clearly expressed in ref. our observed world could be a brane embedded in a higher-dimensional space. Moreover, in the scenario  four-dimensional gravity with acceptable properties may be recovered. This fact initiated enormous activity in the study of different aspects of brane worlds.

In some versions of brane-world scenarios one can construct the black holes on the branes . The investigation of their properties is extremely interesting because this may help to understand better the fundamental problems of quantum gravity. For example, one can try to describe from brane point of view such phenomena as Hawking radiation, Black Hole entropy origin, etc. It is most likely that brane-world scenario should be realized within the context of AdS/CFT correspondence (say, in its simplest form as 5d gauged SG/4d CFT). If it is so one should start from the scalar-tensor gravity as a bulk theory. Then the role of scalars (dilaton if only single scalar presents) should be carefully addressed. In the present paper working in this direction we construct the family of dilatonic brane-world black holes (including regular cases ,like de Sitter space) and carefully investigate their properties, the problem of localization of 4d gravity in such spaces and brane corrections to Newton constant.

In the next section we start from d+1-dimensional dilatonic gravity with d-dimensional brane vacuum energy and formulate the corresponding equations of motion. A flat brane solution with very small cosmological constant is possible. A family of brane-world black holes solutions (curved branes) is presented. They correspond to (anti) de Sitter space, Nariai space, Kerr, and Schwarzschild-de Sitter black holes,etc. Some their properties are investigated. In section 3 we look to gravity perturbations around such backgrounds. Not only graviton but also dilaton perturbations are found. It is explicitly shown that in some cases 4d gravity may be localized in the same fashion as in ref.. Section four is devoted to the study of corrections to Newton constant. The Newton potential is calculated and it is shown that corrections to Newton law near branes are very small. In section 5 we analyse the regular solution where de Sitter Universe is realised on the brane. Brane vacuum energy is found. Simple analysis indicates that there may be problems with gravity localization. The role of quantum effects of brane matter is investigated in section 6. We suggest to add the conformal anomaly induced effective action of boundary, dilaton coupled matter to the complete action. In such a way, Randall-Sundrum compactification may be naturally fitted with AdS/CFT correspondence.It is shown that with account of such effective action there still exists 4d de Sitter wall (our Universe) living in 5d dilatonic spacetime which is asymptotically AdS. Quantum corrections change the brane vacuum energies, they become explicitly time-dependent. RG flow of Newton constant in IR and UV is briefly discussed. Some resume is given in last section.

## 2 Dilatonic black hole solutions in the brane world

In analogy with Randall-Sundrum model , we start with the following action of the gravity coupled with dilaton $`\varphi `$:

$`S`$ $`=`$ $`{\displaystyle \frac{1}{16\pi G_{d+1}}}[{\displaystyle _M}d^{d+1}x\sqrt{g}(R{\displaystyle \frac{1}{2}}_\mu \varphi ^\mu \varphi V(\varphi ))`$ (1)
$`{\displaystyle \underset{i=\mathrm{hid},\mathrm{vis}}{}}{\displaystyle _{B_i}}d^dx\sqrt{\gamma }U_i(\varphi )].`$
Here $`M`$ is the bulk manifold which usually corresponds to AdS and $`B_{\mathrm{hid}}`$ and $`B_{\mathrm{vis}}`$ are branes corresponding to hidden and visible sectors respectively. $`\gamma `$ is the metric on the brane induced by the metric $`g`$ in the bulk. Here $`U_i(\varphi )`$ corresponds to the vacuum energies on the branes in . One assumes $`U(\varphi )`$ is dilaton dependent and its form is explicitly given later from the consistency of the equations of motion. Some important examples of the dilaton potential are presented in , where $`V(\varphi )`$ is given in terms of the superpotential $`W(\varphi )`$ :

$$V=\left(\frac{W}{\varphi }\right)^2\frac{D1}{2(D2)}W^2,$$
(2)
and $`W`$ has the following form:

$$W=\sqrt{\frac{𝒩}{2}}g\left(\frac{1}{a_1}\mathrm{e}^{\frac{a_1\varphi }{2}}\pm \frac{1}{a_2}\mathrm{e}^{\frac{a_2\varphi }{2}}\right).$$
(3)
Here $`D=d+1`$, $`𝒩`$ is the number of the supercharges and the parameter $`g`$, $`a_1`$ and $`a_2`$ depend on the model features but $`a_1>a_2>0`$ in general. As in , we only consider the case of $``$ sign of $`\pm `$ in (3). Note that potentials of above type appear as a result of sphere reduction in M-theory or string theory .

We now assume the metric has the following form:

$$ds^2=dz^2+\mathrm{e}^{2A(z)}\eta _{ij}dx^idx^j,$$
(4)
and $`\varphi `$ only depends on $`z`$. We also suppose the hidden and visible branes sit on $`z=z_{\mathrm{hid}}`$ and $`z=z_{\mathrm{vis}}`$, respectively. Then the equations of motion are given by

$`\varphi ^{\prime \prime }+(D1)A^{}\varphi ^{}={\displaystyle \frac{V}{\varphi }}+{\displaystyle \underset{i=\mathrm{hid},\mathrm{vis}}{}}{\displaystyle \frac{U_i(\varphi )}{\varphi }}\delta (zz_i),`$ (5)
$`(D1)A^{\prime \prime }+(D1)(A^{})^2+{\displaystyle \frac{1}{2}}(\varphi ^{})^2`$
$`={\displaystyle \frac{V}{D2}}V{\displaystyle \frac{D1}{2(D2)}}{\displaystyle \underset{i=\mathrm{hid},\mathrm{vis}}{}}U_i(\varphi )\delta (zz_i),`$ (6)
$`A^{\prime \prime }+(D1)(A^{})^2={\displaystyle \frac{1}{D2}}V{\displaystyle \frac{1}{2(D2)}}{\displaystyle \underset{i=\mathrm{hid},\mathrm{vis}}{}}U_i(\varphi )\delta (zz_i).`$ (7)
Here $`{}_{}{}^{}\frac{d}{dz}`$. For purely bulk sector ($`z_{\mathrm{hid}}<z<z_{\mathrm{vis}}`$, as $`z_{\mathrm{hid}}<z_{\mathrm{vis}}`$), the explicit solutions are given in . Eqs. (5-7) have the following first integrals (in the bulk sector):

$`\varphi ^{}=\sqrt{2}{\displaystyle \frac{W}{\varphi }},A^{}={\displaystyle \frac{1}{\sqrt{2}(D2)}}W.`$ (8)
Near the branes, Eqs. (5-7) have the following form :

$$\varphi ^{\prime \prime }\frac{U_i(\varphi )}{\varphi }\delta (zz_i),A^{\prime \prime }\frac{U_i(\varphi )}{2(D2)}\delta (zz_i),$$
(9)
or

$$2\varphi ^{}\frac{U_i(\varphi )}{\varphi },2A^{}\frac{U_i(\varphi )}{2(D2)},$$
(10)
at $`z=z_i`$. Comparing (10) with (8), we find

$$U_{\mathrm{hid}}(\varphi )=2\sqrt{2}W(\varphi ),U_{\mathrm{vis}}(\varphi )=2\sqrt{2}W(\varphi ).$$
(11)
For simplicity, let $`z_{\mathrm{hid}}=0`$, where $`\varphi =0`$ in the solution in  and we only consider this solution in the following. Then at $`z=z_{\mathrm{vis}}`$, $`\varphi `$ is negative. Since the superpotential is given by the exponential of $`\varphi `$ with positive sign, the vacuum energy $`U_{\mathrm{vis}}`$, which can be identified with the cosmological constant, can be small even if $`|\varphi |`$ is not so large. The result might explain why the cosmological constant is small. We should note that the visible brane corresponds to the 4d universe where we live. Then the visible brane part in the action (1) mainly describes the dynamics of the universe and $`U_{\mathrm{vis}}`$ corresponds to the vacuum energy or cosmological constant in our universe.

As an extension, one can consider the case that the brane is curved. Instead of (4), we take the following metric:

$$ds^2=dz^2+\mathrm{e}^{2A(z)}\stackrel{~}{g}_{ij}dx^idx^j,$$
(12)
Here $`\stackrel{~}{g}_{ij}`$ is the metric of the Einstein manifold, which is defined by

$$\stackrel{~}{R}_{ij}=k\stackrel{~}{g}_{ij},$$
(13)
where $`\stackrel{~}{R}_{ij}`$ is the Ricci tensor given by $`\stackrel{~}{g}_{ij}`$ and $`k`$ is a constant. Then Eqs.(5) and (2) do no change but one obtains the following equation instead of (7):

$$A^{\prime \prime }+(D1)(A^{})^2=k\mathrm{e}^{2A}\frac{1}{D2}V\frac{1}{2(D2)}\underset{i=\mathrm{hid},\mathrm{vis}}{}U_i(\varphi )\delta (zz_i).$$
(14)
Especialy when $`k=0`$, we get the previous solution for $`\varphi `$, $`A`$ and $`U_i`$. We should note, however, that $`k=0`$ does not always mean the brane is flat. As well-known, the Einstein equations are given by,

$$R_{\mu \nu }\frac{1}{2}g_{\mu \nu }R+\frac{1}{2}\mathrm{\Lambda }g_{\mu \nu }=T_{\mu \nu }^{\mathrm{matter}}.$$
(15)
Here $`T_{\mu \nu }^{\mathrm{matter}}`$ is the energy-momentum tensor of the matter fields. If we consider the vacuum solution where $`T_{\mu \nu }^{\mathrm{matter}}=0`$, Eq.(15) can be rewritten when $`d=4`$ as (see also )

$$R_{\mu \nu }=\frac{\mathrm{\Lambda }}{2}g_{\mu \nu }.$$
(16)
If we put $`\mathrm{\Lambda }=2k`$, Eq.(16) is nothing but the equation for the Einstein manifold. The Einstein manifolds are not always homogeneous manifolds like flat Minkowski, (anti-)de Sitter space

$$ds_4^2=V(r)dt^2+V^1(r)dr^2+r^2d\mathrm{\Omega }^2,V(r)=1\frac{\mathrm{\Lambda }}{6}r^2,$$
(17)
or Nariai space

$$ds_4^2=\frac{1}{\mathrm{\Lambda }}\left(\mathrm{sin}^2\chi d\psi ^2d\chi ^2d\mathrm{\Omega }^2\right).$$
(18)
but they can be some black hole solutions like Schwarzschild-(anti-)de Sitter black hole

$$ds_4^2=V(r)dt^2+V^1(r)dr^2+r^2d\mathrm{\Omega }^2,V(r)=1\frac{\stackrel{~}{G}_4M}{r}\frac{\mathrm{\Lambda }}{6}r^2.$$
(19)
As a special case, one can also consider $`k=0`$ solution like Schwarzschild black hole,

$$ds_4^2\stackrel{~}{g}_{ij}dx^idx^j=\left(1\frac{\stackrel{~}{G}_4M}{r}\right)dt^2+\frac{dr^2}{\left(1\frac{\stackrel{~}{G}_4M}{r}\right)}+r^2d\mathrm{\Omega }^2,$$
(20)
or Kerr one

$`ds_4^2`$ $`=`$ $`\mathrm{\Delta }\stackrel{~}{A}dt^2{\displaystyle \frac{\mathrm{\Sigma }^2}{\mathrm{\Delta }}}dr^2\mathrm{\Sigma }^2d\theta ^2{\displaystyle \frac{\mathrm{sin}^2\theta }{\stackrel{~}{A}}}\left(d\phi \mathrm{\Omega }dt\right)`$ (21)
$`\stackrel{~}{A}{\displaystyle \frac{\mathrm{\Sigma }^2\left(\mathrm{\Delta }a^2\mathrm{sin}^2\theta \right)}{\mathrm{\Sigma }^4\mathrm{\Delta }4a^2\stackrel{~}{G}_4^2M^2r^2\mathrm{sin}^2\theta }},\mathrm{\Omega }{\displaystyle \frac{2a\stackrel{~}{G}_4Mr\stackrel{~}{A}}{\mathrm{\Sigma }^2}}`$
$`\mathrm{\Delta }r^22\stackrel{~}{G}_4Mr+a^2,\mathrm{\Sigma }^2r^2+a^2\mathrm{cos}^2\theta .`$
In (19), (20) and (21), $`M`$ is the mass of the black hole on the brane and the effective gravitational constant $`\stackrel{~}{G}_4`$ on the 3-brane (here $`d=4`$) is given by

$$\frac{1}{\stackrel{~}{G}_4}=\frac{1}{G_5}_{z_{\mathrm{hid}}}^{z_{\mathrm{vis}}}𝑑z\mathrm{e}^{(d2)A}.$$
(22)
In (21), the parameter $`a`$ is related with the angular momentum $`J`$ of the black hole on the brane by

$$J=Ma.$$
(23)
In these solutions, the curvature singularity at $`r=0`$ has a form of line penetrating the bulk 5d universe and the horizon makes a tube surrounding the singularity. The singularity and the horizon connect the hidden and visible branes. Thus we presented a big family of dilatonic solutions in the brane world.

It would be interesting to see how the black hole looks like in the bulk (see corresponding discussion in ). We now consider the case $`|z_{\mathrm{vis}}|`$ is large but $`z_{\mathrm{vis}}<0`$ or $`z_{\mathrm{vis}}>0`$. When $`z_{\mathrm{vis}}`$ is negative and its absolute value $`|z_{\mathrm{vis}}|`$ is large, the asymptotic behaviour of $`A`$ is given by

$$A\gamma z,\gamma \frac{g}{a_1d\sqrt{𝒩}}.$$
(24)
Then since the metric has the form in (12), the typical proper size $`l_{\mathrm{BH}}^{}`$ of the black hole (or the typical proper distance to the horizon) transverse to the brane would be given by

$$l_{\mathrm{BH}}^{}=\frac{1}{\gamma }\mathrm{ln}\left(\gamma r_0\right)=\frac{1}{\gamma }\mathrm{ln}\left(\gamma \stackrel{~}{G}_4M\right).$$
(25)
Then the transverse size $`l_{\mathrm{BH}}^{}`$ grows like $`\mathrm{ln}M`$ when the black hole mass $`M`$ increases although the (horizon) size $`r_0`$ along the brane is linear to $`M`$. This might tell that matter can pass around the black hole through the fifth dimension similar to the effect suggested in .

On the other hand, we can consider the case that $`z_{\mathrm{vis}}`$ is positive and large. The asymptotic behaviour of $`A`$ when $`z`$ is large, is given by

$$\mathrm{e}^{2A}\alpha ^2z^{2\beta },\alpha \left\{c\sqrt{\frac{𝒩}{8}}g\left(\frac{1}{4}a_2\sqrt{𝒩}g\right)^{\frac{a_1}{a_2}}\right\}^{\frac{1}{d}},\beta \frac{a_1}{a_2d}.$$
(26)
Then if one defines a new coordinate $`w`$ by

$$y=\frac{z^{1\beta }}{\alpha (1\beta )},$$
(27)
the metric in (12) can be rewritten in the following form:

$$ds^2\alpha ^2\left\{\alpha (1\beta )y\right\}^{\frac{2\beta }{1\beta }}\left(dw^2+\stackrel{~}{g}_{ij}dx^idx^j\right).$$
(28)
Then we can expect the horizon in the bulk is typically given by $`yr_0`$ and the typical proper size $`l_{\mathrm{BH}}^+`$ of the black hole transverse to the brane would be given by

$$l_{\mathrm{BH}}^+=\left\{\alpha (1\beta )r_0\right\}^{\frac{1}{1\beta }}=\left\{\alpha (1\beta )\stackrel{~}{G}_4M\right\}^{\frac{1}{1\beta }}.$$
(29)
Since $`a_1=2\sqrt{\frac{5}{3}}`$ and $`a_2=\frac{4}{\sqrt{15}}`$ for $`d=D1=4`$ and $`𝒩=1`$ model in , we have $`\frac{1}{1\beta }=\frac{5}{3}`$ and the transverse size $`l_{\mathrm{BH}}^+`$ grows like $`M^{\frac{5}{3}}`$ when the black hole mass $`M`$ increases. This would tell that matter cannot pass through a black hole, which is different from the case when $`z_{\mathrm{vis}}\mathrm{}`$. Of course, this is a preliminary qualitative discussion of brane-world black holes properties.

## 3 Gravity perturbations

Our next problem will be the description of the gravity on the brane. For that purpose one can consider the perturbation from the above obtained solution by assuming the metric in the following form:

$$ds^2=dz^2+\mathrm{e}^{2A(z)}\stackrel{~}{g}_{ij}dx^idx^j+h_{ij}dx^idx^j,|h_{ij}|1.$$
(30)
Here we choose the gauge where $`g_{zz}=1`$, $`g_{zi}=g_{iz}=0`$, $`D^ih_{ij}=0`$ and $`h_i^i=0`$. We should note that the metric $`\stackrel{~}{g}_{ij}`$ on the brane is not necessary to be flat but can be any Einstein manifold (13). We put $`k=0`$ for simplicity. Then $`A(z)`$ is given by solving (8) . From the Einstein equation, we obtain the following linearized equation:

$$0=\mathrm{e}^{2A}\stackrel{~}{\mathrm{}}^{(0)}h_{ij}+_z^2h_{ij}+(d4)_zA_zh_{ij}4\left\{(d1)_zA^2+_z^2A\right\}h_{ij}.$$
(31)
Here $`\stackrel{~}{\mathrm{}}^{(0)}`$ is the d’Alembertian on the brane given by $`\stackrel{~}{g}_{ij}`$. Changing the coordinate $`z`$ to $`\zeta `$ by

$$d\zeta =\mathrm{e}^Adz,$$
(32)
one rewrites (31) in the following form:

$$0=\stackrel{~}{\mathrm{}}^{(0)}h_{ij}+_\zeta ^2h_{ij}+(d5)_\zeta A_\zeta h_{ij}4\left\{(d2)_\zeta A^2+_\zeta ^2A\right\}h_{ij}.$$
(33)
In order to solve Eq.(33), we assume the following form for $`h_{ij}`$:

$$h_{ij}=\psi (\zeta )\widehat{h}_{ij}(x)$$
(34)
and assume $`\widehat{h}_{ij}(x)`$ satisfies

$$\stackrel{~}{\mathrm{}}^{(0)}\widehat{h}_{ij}(x)=m^2\widehat{h}_{ij}(x).$$
(35)
Here $`m`$ corresponds to the mass. Then one has

$$0=m^2\psi +_\zeta ^2\psi +(d5)_\zeta A_\zeta \psi 4\left\{(d2)_\zeta A^2+_\zeta ^2A\right\}\psi .$$
(36)
As we have a dilaton field $`\varphi `$, we should consider the perturbation of $`\varphi `$:

$$\varphi =\varphi ^{(0)}+\phi ,|\phi ||\varphi ^{(0)}|.$$
(37)
Here $`\varphi ^{(0)}`$ is given by solving (8). Linearizing the equation of motion given by the variation of $`\varphi `$,

$$\mathrm{}\varphi =\frac{V(\varphi )}{\varphi }+\underset{i}{}\frac{U_i(\varphi )}{\varphi }\delta (zz_i),$$
(38)
one gets

$$\mathrm{e}^{2A}\stackrel{~}{\mathrm{}}^{(0)}\phi +_z^2\phi +d_zA_z\phi =\left\{\frac{^2V(\varphi )}{\varphi ^2}+\underset{i}{}\frac{^2U_i(\varphi )}{\varphi ^2}\delta (xz_i)\right\}\phi .$$
(39)
Using the coordinate $`\zeta `$ defined by (32) and assuming $`\varphi `$ in the following form:

$$\phi (\zeta ,x)=\theta (\zeta )\widehat{\phi }(x),\stackrel{~}{\mathrm{}}^{(0)}\widehat{\phi }(x)=m^2\widehat{\phi }(x),$$
(40)
we can rewrite Eq.(39) as:

$$m^2\theta +_\zeta ^2\theta +(d1)_\zeta A_\zeta \theta =\mathrm{e}^{2A}\left\{\frac{^2V(\varphi )}{\varphi ^2}+\underset{i}{}\frac{^2U_i(\varphi )}{\varphi ^2}\delta (zz_i)\right\}\theta .$$
(41)
In the solutions found in , there appear two branches. In the first branch, $`z`$ runs from $`\mathrm{}`$ to $`0`$, $`\varphi `$ from $`0`$ to $`+\mathrm{}`$ and there appears a curvature singularity at $`z=0`$. In the second one $`z`$ runs from $`\mathrm{}`$ to $`+\mathrm{}`$, $`\varphi `$ from $`0`$ to $`\mathrm{}`$ and there does not appear any curvature singularity. In both of the branches, the spacetime approaches to AdS.

We now consider the perturbation when $`z_{\mathrm{vis}}`$ is negative and its absolute value $`|z_{\mathrm{vis}}|`$ is large and the region $`zz_{\mathrm{vis}}`$. Then we find the following asymptotic behaviour of $`A`$ and $`\varphi `$:

$$A\gamma z,\varphi \mathrm{e}^{d\gamma z}0,\gamma \frac{g}{a_1d\sqrt{𝒩}}.$$
(42)
Then $`\zeta `$ in (32) is given by

$$\zeta =\frac{\mathrm{e}^{\gamma z}}{\gamma }$$
(43)
and Eq.(36) has the following form

$$0=m^2\psi +_\zeta ^2\psi +\frac{5d}{\zeta }_\zeta \psi \frac{4(d1)}{\zeta ^2}\psi .$$
(44)
When $`m>0`$, the corresponding solution is called Kaluza-Klein (KK) mode and the solution of $`m=0`$ corresponds to the graviton on the brane. When $`m^2=0`$, the solution of (44) is given by the power of $`\zeta `$:

$$\psi =\zeta ^a.$$
(45)
The exponent $`a`$ can be found by solving the following algebraic equation:

$$0=a^2+(4d)a4(d1).$$
(46)
Especially when $`d=4`$, one gets

$$a=\pm 2\sqrt{3}.$$
(47)
The existence of the normalizable solution tells that the gravity is localized near the brane. This situation does not change even if the brane is flat or a (4d) black hole spacetime.

When $`m^2>0`$, the solution of (44) is given by Bessel functions $`J_\nu `$ and $`N_\nu `$ ($`=Y_\nu `$):

$`\psi (\zeta )=\zeta ^b\left(c_1J_\nu (m\zeta )+c_2N_\nu (m\zeta )\right)`$
$`12b=5d,b^2\nu ^2=4(d1).`$ (48)
Here $`c_1`$ and $`c_2`$ are constants of integration, which should be determined by the boundary condition at $`z=z_{\mathrm{vis}}`$:

$`_z\psi (z=z_{\mathrm{vis}})`$ $`=`$ $`\mathrm{e}^{A(\zeta =\zeta _{\mathrm{vis}})}_\zeta \psi (\zeta =\zeta _{\mathrm{vis}})`$ (49)
$`=`$ $`{\displaystyle \frac{2\sqrt{2}}{d3}}W\left(\varphi (z=z_{\mathrm{vis}})\right)\psi (z=z_{\mathrm{vis}}).`$
Here $`\zeta _{\mathrm{vis}}`$ is the value of $`\zeta `$ corresponding to $`z=z_{\mathrm{vis}}`$. The boundary condition comes from the $`\delta `$-function behaviour of $`_z^2A`$ at $`z=z_{\mathrm{vis}}`$. Especially for $`d=4`$, we find

$$b=0,\nu =2\sqrt{3}.$$
(50)
If there is a solution with $`m^2<0`$, the system becomes unstable. When $`m^2<0`$, the solution of (44) is given by modified Bessel functions $`I_\nu `$ and $`K_\nu `$:

$`\psi (\zeta )=\zeta ^b\left(c_1I_\nu (\mu \zeta )+c_2K_\nu (\mu \zeta )\right)`$
$`12b=5d,b^2\nu ^2=4(d1),\mu ^2=m^2.`$ (51)
Since $`I_\mu `$ increases exponentially for large $`\zeta `$, $`c_1`$ must vanish. On the other hand, $`K_\nu `$ behaves as $`K_\mu (m\zeta )\mathrm{e}^{\mu \zeta }`$ for large $`\zeta `$. When $`\zeta `$ is large, $`z\mathrm{}`$, $`\varphi 0`$ and $`W\sqrt{\frac{𝒩}{2}}g\left(\frac{1}{a_1}\frac{1}{a_2}\right)<0`$. Therefore there is an unstable solution which satisfies the boundary condition (49) if one chooses

$$\mu \frac{2\sqrt{2}}{d3}\mathrm{e}^{A(z=z_{\mathrm{vis}})}W\left(\varphi (z=z_{\mathrm{vis}})\right)\frac{2\sqrt{2}}{d3}\mathrm{e}^{\gamma z_{\mathrm{vis}}}\sqrt{\frac{𝒩}{2}}g\left(\frac{1}{a_1}\frac{1}{a_2}\right).$$
(52)
As $`\mu `$ vanishes in the limit of $`z\mathrm{}`$, the brane will be driven to $`z\mathrm{}`$.

We now consider the perturbation by the dilaton $`\varphi `$. When $`\zeta `$ is large, Eq.(41) can be rewritten as

$$m^2\theta +_\zeta ^2\theta \frac{d1}{\zeta }_\zeta \theta \frac{V_0^{\prime \prime }}{\gamma ^2\zeta ^2}\theta =\mathrm{e}^{2A}\underset{i}{}\frac{^2U_i(\varphi )}{\varphi ^2}\delta (zz_i)\theta .$$
(53)
Here

$$V_0^{\prime \prime }\frac{^2V(\varphi )}{\varphi ^2}|_{\varphi =0}=\frac{1}{g^2}\left(1\frac{a_2}{a_1}\right)>0.$$
(54)
Then one finds $`\theta `$ is given by the power of $`\zeta `$ when $`m^2=0`$ or Bessel functions when $`m^2>0`$. From the $`\delta `$-function, we find that $`\theta `$ should satisfy the following boundary condition $`\zeta =\zeta _{\mathrm{vis}}`$ :

$$_\zeta \theta =\frac{\sqrt{2}}{\gamma \zeta _{\mathrm{vis}}}\frac{^2W}{\varphi ^2}|_{\varphi =0}\theta .$$
(55)
Since

$$\frac{^2W}{\varphi ^2}|_{\varphi =0}=\sqrt{\frac{𝒩}{2}}\frac{g(a_1a_2)}{4}>0,$$
(56)
the coefficient $`\frac{\sqrt{2}}{\gamma \zeta _{\mathrm{vis}}}\frac{^2W}{\varphi ^2}|_{\varphi =0}`$ is negative. Then the boundary condition is consistent with the modified Bessel function $`K_\nu `$ and the condition could be satisfied by properly choosing $`m^2`$. This tells that there exists an unstable mode corresponding to $`m^2<0`$.

In the second branch in the solution in , we can consider the case that $`z_{\mathrm{vis}}`$ is positive and large. We also consider the region $`zz_{\mathrm{vis}}`$. Since the asymptotic behaviour of $`A`$ when $`z`$ is large is given by (26), one gets

$$\zeta \frac{z^{1\beta }}{1\beta }$$
(57)
and Eq.(33) has the following form

$$0=\stackrel{~}{\mathrm{}}^{(0)}h_{ij}+_\zeta ^2h_{ij}+\frac{(d5)\stackrel{~}{\beta }}{\zeta }_\zeta h_{ij}4\left\{(d2)\stackrel{~}{\beta }^2\stackrel{~}{\beta }\right\}h_{ij}.$$
(58)
Here

$$\stackrel{~}{\beta }\frac{\beta }{1\beta }.$$
(59)
and we obtain

$$0=m^2\psi +_\zeta ^2\psi +\frac{(d5)\stackrel{~}{\beta }}{\zeta }_\zeta \psi 4\left\{(d2)\stackrel{~}{\beta }^2\stackrel{~}{\beta }\right\}\psi .$$
(60)
When $`m=0`$, the solution is given by

$$\psi =(\zeta )^a.$$
(61)
Here $`a`$ is the solution of the following algebraic equation:

$$0=a^2+\left\{(d5)\stackrel{~}{\beta }1\right\}a4\left\{(d2)\stackrel{~}{\beta }^2\stackrel{~}{\beta }\right\}.$$
(62)
For $`d=D1=4`$ and $`𝒩=1`$ model in , where $`a_1=2\sqrt{\frac{5}{3}}`$ and $`a_2=\frac{4}{\sqrt{15}}`$, we have

$$a=\frac{4\pm 2\sqrt{39}}{3}=5.49\mathrm{},2.83\mathrm{}$$
(63)
Since we are considering the case that $`z_{\mathrm{vis}}`$ is positive and $`zz_{\mathrm{vis}}`$, the first positive $`a`$ would correspond to a normalizable solution. The existence of the normalizable solution tells that the gravity near the brane is localized.

When $`m>0`$, the solution of (60) is given by Bessel functions $`J_\nu `$ and $`N_\nu `$ ($`=Y_\nu `$):

$`\psi (\zeta )=z^b\left(c_1J_\nu (m\zeta )+c_2N_\nu (m\zeta )\right)`$
$`12b=(d5)\stackrel{~}{\beta },b^2\nu ^2=4\left\{(d2)\stackrel{~}{\beta }^2\stackrel{~}{\beta }\right\}.`$ (64)
Here $`c_1`$ and $`c_2`$ are constants of integration, which should be again determined by the boundary condition (49) at $`z=z_{\mathrm{vis}}`$. The boundary condition comes from the $`\delta `$-function behaviour of $`_z^2A`$ at $`z=z_{\mathrm{vis}}`$. When $`\zeta `$ ($`z`$) is large, the Bessel functions $`J_\nu (m\zeta )`$ and $`N_\nu (m\zeta )`$ behave as

$`J_\nu (m\zeta )`$ $``$ $`\sqrt{{\displaystyle \frac{2}{\pi m\zeta }}}\mathrm{cos}\left(m\zeta {\displaystyle \frac{(2\nu +1)\pi }{4}}\right),`$
$`N_\nu (m\zeta )`$ $``$ $`\sqrt{{\displaystyle \frac{2}{\pi m\zeta }}}\mathrm{sin}\left(m\zeta {\displaystyle \frac{(2\nu +1)\pi }{4}}\right).`$ (65)
For $`d=D1=4`$ and $`𝒩=1`$ model in , we have

$$b=\frac{4}{3},\nu ^2=\frac{439}{9}=(4.16\mathrm{})^2.$$
(66)
The existence of the unstable mode corresponding to modified Bessel function $`K_\mu (\mu \zeta )`$ $`(\mu ^2=m^2`$ depends on the asymptotic behaviour of $`W`$ as in $`z_{\mathrm{vis}}\mathrm{}`$ case. From (3) ($``$ sign is chosen), we find $`W<0`$ when $`\varphi \mathrm{}`$ and $`\mathrm{e}^{A\left(\varphi (z)\right)}W\left(\varphi (z)\right)`$ vansihes when $`z(\zeta )+\mathrm{}`$. Therefore an unstable solution given by $`K_\mu (\mu \zeta )`$ exists and the brane moves to $`+\mathrm{}`$, where the vacuum energy of the brane vanishes since $`\mu 0`$ when $`z_{\mathrm{vis}}\mathrm{}`$.

We also consider the perturbation by the dilaton $`\varphi `$. When $`\zeta `$ is large, Eq.(41) can be rewritten as

$$m^2\theta +_\zeta ^2\theta +\frac{\stackrel{~}{\beta }(d1)}{\zeta }_\zeta \theta +\frac{\stackrel{~}{V}_0}{\gamma ^2\zeta ^2}\theta =\mathrm{e}^{2A}\underset{i}{}\frac{^2U_i(\varphi )}{\varphi ^2}\delta (zz_i)\theta .$$
(67)
Here

$$\stackrel{~}{V}_0\frac{1}{2}g^2\left(1\frac{a_1}{da_2}\right)^2\left(\frac{a_2}{a_1}\right)\left(\frac{1}{4}a_2\sqrt{𝒩}g\right)^2.$$
(68)
Then we find $`\theta `$ is given by the power of $`\zeta `$ when $`m^2=0`$ or Bessel functions when $`m^2>0`$. The existence of the unstable mode corresponding the modified Bessel function depends on the sign of $`\frac{^2W}{\varphi ^2}`$ at $`z=z_{\mathrm{vis}}`$. Since

$$\frac{^2W}{\varphi ^2}|_{z=z_{\mathrm{vis}}}\sqrt{\frac{𝒩}{2}}g\frac{a_2}{4}\mathrm{e}^{\frac{a_2\varphi }{2}}<0,$$
(69)
for large positive $`z_{\mathrm{vis}}`$, the sign is negative, which is different from the case $`z_{\mathrm{vis}}\mathrm{}`$. Therefore, remarkably there does not exist an unstable mode corresponding to $`m^2<0`$ when we choose $`z_{\mathrm{vis}}+\mathrm{}`$, where the cosmological constant becomes very small. To conclude, the above analysis shows the possibility to get the localized gravity near the brane corresponding to our black hole solution. Note that excellent introduction to universal aspects of gravity localization in brane world can be found in ref..

## 4 Newton law correction

It is interesting to discuss now the correction to the Newton law coming from KK mode.

First we consider $`z_{\mathrm{vis}}\mathrm{}`$ case in (3). The constants of integration should be determined by the boundary condition at $`z=z_{\mathrm{vis}}`$ in (49). As the overall factor $`\sqrt{\frac{2}{\pi m\zeta }}`$ should be absorbed into the measure for the normalization, we replace it with unity and we impose a constraint as follows:

$$c_1^2+c_2^2=1.$$
(70)
Then when $`d=4`$, and $`m\zeta `$ is large, $`\psi (\zeta )`$ behaves as

$$\psi (\zeta )c_1\text{cos}\left(m\zeta \frac{(4\sqrt{3}+1)\pi }{4}\right)+c_2\text{sin}\left(m\zeta \frac{(4\sqrt{3}+1)\pi }{4}\right)$$
(71)
so then $`_\zeta \psi (\zeta )`$ is given by

$$_\zeta \psi (\zeta )mc_1\text{sin}\left(m\zeta \frac{(4\sqrt{3}+1)\pi }{4}\right)+mc_2\text{cos}\left(m\zeta \frac{(4\sqrt{3}+1)\pi }{4}\right).$$
(72)
We should note that there might be some ambiguities in the limiting procedure. Since we consider $`\zeta _{\mathrm{vis}}+\mathrm{}`$, we first put $`m\zeta `$ to be large and after that we choose the mass $`m`$ in the KK mode to be small, which is relevant to the long range force. Then by using the boundary condition (49) and the constraint (70), we get $`c_1,c_2`$ in following forms:

$`c_1`$ $`=`$ $`\pm \kappa \sqrt{{\displaystyle \frac{1}{\kappa ^2+1}}}`$
$`c_2`$ $`=`$ $`\pm \sqrt{{\displaystyle \frac{1}{\kappa ^2+1}}}`$ (73)
Here $`\kappa `$ is defined by

$`\kappa `$ $``$ $`{\displaystyle \frac{\text{cos}\zeta ^{}+Z(\zeta =\zeta _{\mathrm{vis}})\text{sin}\zeta ^{}}{\text{sin}\zeta ^{}Z(\zeta =\zeta _{\mathrm{vis}})\text{cos}\zeta ^{}}}`$
$`Z(\zeta =\zeta _{\mathrm{vis}})`$ $``$ $`{\displaystyle \frac{2\sqrt{2}e^{A(\zeta =\zeta _{\mathrm{vis}})}W(\varphi (z=z_{\mathrm{vis}}))}{m}}`$
$`\zeta ^{}`$ $``$ $`m\zeta _{\mathrm{vis}}{\displaystyle \frac{(4\sqrt{3}+1)\pi }{4}}`$ (74)
One can find the value of $`\psi `$ (71) at $`\zeta =\zeta _{\mathrm{vis}}`$ using (4), (4):

$`\psi (\zeta _{\mathrm{vis}})`$ $``$ $`\sqrt{{\displaystyle \frac{1}{\kappa ^2+1}}}\left(\kappa \text{cos}\zeta ^{}+\text{sin}\zeta ^{}\right)`$ (75)
$`=`$ $`\sqrt{{\displaystyle \frac{1}{\kappa ^2+1}}}\left({\displaystyle \frac{1}{\text{sin}\zeta ^{}+Z(\zeta =\zeta _{\mathrm{vis}})\text{cos}\zeta ^{}}}\right)`$
$`=`$ $`{\displaystyle \frac{\text{sin}\zeta ^{}+Z(\zeta =\zeta _{\mathrm{vis}})\text{cos}\zeta ^{}}{\sqrt{1+Z(\zeta =\zeta _{\mathrm{vis}})^2}}}\left({\displaystyle \frac{1}{\text{sin}\zeta ^{}+Z(\zeta =\zeta _{\mathrm{vis}})\text{cos}\zeta ^{}}}\right)`$
$`=`$ $`{\displaystyle \frac{1}{\sqrt{1+Z(\zeta =\zeta _{\mathrm{vis}})^2}}}`$
If we take $`m`$ is small (or $`|Z|`$ is large), then $`\psi (\zeta _{\mathrm{vis}})`$ is given by

$`\psi {\displaystyle \frac{1}{Z(\zeta =\zeta _{\mathrm{vis}})}}={\displaystyle \frac{m}{2\sqrt{2}\mathrm{e}^{A(\zeta =\zeta _{\mathrm{vis}})}W(\varphi (z=z_{\mathrm{vis}}))}}`$ (76)
Then the correction to Newton’s Law is

$`V(r)`$ $``$ $`\stackrel{~}{G}_4{\displaystyle \frac{m_1m_2}{r}}+{\displaystyle _0^{\mathrm{}}}𝑑mG_5{\displaystyle \frac{m_1m_2e^{mr}}{r}}\psi (\zeta =\zeta _{\mathrm{vis}})^2`$ (77)
$`=`$ $`\stackrel{~}{G}_4{\displaystyle \frac{m_1m_2}{r}}+{\displaystyle _0^{\mathrm{}}}𝑑mG_5{\displaystyle \frac{m_1m_2e^{mr}}{r}}{\displaystyle \frac{m^2}{8\mathrm{e}^{2A(\zeta =\zeta _{\mathrm{vis}})}W(\varphi (z=z_{\mathrm{vis}}))^2}}`$
$`=`$ $`\stackrel{~}{G}_4{\displaystyle \frac{m_1m_2}{r}}\left(1+{\displaystyle \frac{G_5}{\stackrel{~}{G}_4}}{\displaystyle \frac{1}{r^34\mathrm{e}^{2A(\zeta =\zeta _{\mathrm{vis}})}W(\varphi (z=z_{\mathrm{vis}}))^2}}\right)`$
We should note that that the correction is not given by $`\frac{1}{r^3}`$ as in  but $`\frac{1}{r^4}`$. This is mainly due to the limiting procedure where we first have put $`m\zeta `$ to be large and after that we have chosen the mass $`m`$ in the KK mode to be small.

Next we consider the case $`z_{\mathrm{vis}}\mathrm{}`$ given in (3). When $`\zeta `$ ($`z`$) is large, the Bessel functions $`J_\nu (m\zeta )`$ and $`N_\nu (m\zeta )`$ behave as

$`J_\nu (m\zeta )`$ $``$ $`\sqrt{{\displaystyle \frac{2}{\pi m\zeta }}}\mathrm{cos}\left(m\zeta {\displaystyle \frac{(2\nu +1)\pi }{4}}\right),`$
$`N_\nu (m\zeta )`$ $``$ $`\sqrt{{\displaystyle \frac{2}{\pi m\zeta }}}\mathrm{sin}\left(m\zeta {\displaystyle \frac{(2\nu +1)\pi }{4}}\right).`$ (78)
For $`d=D1=4`$ and $`𝒩=1`$ model in , we have the parameters $`b`$, $`\nu `$ given in (66). Then $`c_1`$ and $`c_2`$ in (3) should be determined by the boundary condition at $`z=z_{\mathrm{vis}}`$ in (49) and constraint (70) again. Since

$$_\zeta \psi (\zeta )mc_1\text{sin}\left(m\zeta \frac{(2\nu +1)\pi }{4}\right)mc_2\text{cos}\left(m\zeta \frac{(2\nu +1)\pi }{4}\right),$$
(79)
we can get $`c_1,c_2`$ in the same way as (4).

$`c_1`$ $`=`$ $`\pm \kappa \sqrt{{\displaystyle \frac{1}{\kappa ^2+1}}}`$
$`c_2`$ $`=`$ $`\pm \sqrt{{\displaystyle \frac{1}{\kappa ^2+1}}}`$ (80)
Here $`\kappa `$ is defined by

$`\kappa `$ $``$ $`{\displaystyle \frac{\text{cos}\zeta ^{}+Z(\zeta =\zeta _{\mathrm{vis}})\text{sin}\zeta ^{}}{\text{sin}\zeta ^{}Z(\zeta =\zeta _{\mathrm{vis}})\text{cos}\zeta ^{}}}`$
$`Z(\zeta =\zeta _{\mathrm{vis}})`$ $``$ $`{\displaystyle \frac{2\sqrt{2}e^{A(\zeta =\zeta _{\mathrm{vis}})}W(\varphi (z=z_{\mathrm{vis}}))}{m}}`$
$`\zeta ^{}`$ $``$ $`m\zeta {\displaystyle \frac{(2\nu +1)\pi }{4}}`$ (81)
And $`\psi `$ (3) is written by using (4), (4).

$`\psi (\zeta )`$ $``$ $`\sqrt{{\displaystyle \frac{1}{\kappa ^2+1}}}\left(\kappa \text{cos}\zeta ^{}+\text{sin}\zeta ^{}\right)`$ (82)
$`=`$ $`{\displaystyle \frac{1}{\sqrt{1+Z(\zeta =\zeta _{\mathrm{vis}})^2}}}`$
Then the correction to Newton’s law in the limit that $`m`$ is small (or $`|Z|`$ is large) is

$`V(r)`$ $``$ $`\stackrel{~}{G}_4{\displaystyle \frac{m_1m_2}{r}}+{\displaystyle _0^{\mathrm{}}}𝑑mG_5{\displaystyle \frac{m_1m_2e^{mr}}{r}}\psi ^2`$ (83)
$`=`$ $`\stackrel{~}{G}_N{\displaystyle \frac{m_1m_2}{r}}+{\displaystyle _0^{\mathrm{}}}𝑑mG_5{\displaystyle \frac{m_1m_2e^{mr}}{r}}{\displaystyle \frac{m^2}{8e^{2A(\zeta =\zeta _{\mathrm{vis}})}W(\varphi (z=z_{\mathrm{vis}}))^2}}`$
$`=`$ $`\stackrel{~}{G}_4{\displaystyle \frac{m_1m_2}{r}}\left(1+{\displaystyle \frac{G_5}{\stackrel{~}{G}_4}}{\displaystyle \frac{1}{4e^{2A(\zeta =\zeta _{\mathrm{vis}})}W(\varphi (z=z_{\mathrm{vis}}))^2}}{\displaystyle \frac{1}{r^3}}\right).`$
This is qualitatively the same type of correction as in ref.. Thus, the observer living on the brane Universe does not see drastic changes in the Newton law.

## 5 Dilatonic de Sitter brane Universe

When $`V`$ is constant, instead of (2), the solution is given in , as follows

$`ds^2`$ $`=`$ $`f(y)dy^2+y{\displaystyle \underset{i,j=0}{\overset{d1}{}}}\stackrel{~}{g}_{ij}(x^k)dx^idx^j`$
$`f`$ $`=`$ $`{\displaystyle \frac{d(d1)}{4y^2\lambda ^2\left(1+\frac{c^2}{2\lambda ^2y^d}+\frac{kd}{\lambda ^2y}\right)}}`$
$`\varphi `$ $`=`$ $`c{\displaystyle 𝑑y\sqrt{\frac{d(d1)}{4y^{d+2}\lambda ^2\left(1+\frac{c^2}{2\lambda ^2y^d}+\frac{kd}{\lambda ^2y}\right)}}}.`$ (84)
Here we define $`V=\lambda ^2`$ and $`g_{ij}`$ is the metric of the Einstein manifold, which is defined by $`r_{ij}=k\stackrel{~}{g}_{ij}`$, where $`r_{ij}`$ is the Ricci tensor constructed with $`\stackrel{~}{g}_{ij}`$ and $`k`$ is a constant. Especially when $`k`$ is given by $`k=d\widehat{c}^2>0`$, the metric on the brane can correspond to the cosmological solution

$$\underset{i,j=0}{\overset{d1}{}}\stackrel{~}{g}_{ij}(x^k)dx^idx^j=\frac{1}{\widehat{c}^2t^2}\left(dt^2+\underset{i=1}{\overset{d1}{}}\left(dx^i\right)^2\right).$$
(85)
This solution describes the wall expanding and travelling in 5d universe. It may be presented as regular solution in terms of radial coordinate similarly to black hole.

If one defines a new coordinate $`z`$ by

$$z=𝑑y\sqrt{\frac{d(d1)}{4y^2\lambda ^2\left(1+\frac{c^2}{2\lambda ^2y^d}+\frac{kd}{\lambda ^2y}\right)}}$$
(86)
and solves $`y`$ with respect to $`z`$, we obtain the warp factor $`\mathrm{e}^{2A}=y(z)`$. We should note that there is a curvature singularity at $`y=0`$ . Therefore we cannot put only one brane but two branes and consider the region sandwiched by them to avoid the singularity.

Using (10), one finds the vacuum energy on the brane as follows

$`U_{\mathrm{hid}}`$ $`=`$ $`4\lambda \sqrt{{\displaystyle \frac{d1}{d}}\left(1+{\displaystyle \frac{c^2}{2\lambda ^2y_{\mathrm{hid}}^d}}+{\displaystyle \frac{kd}{\lambda ^2y_{\mathrm{hid}}}}\right)}`$
$`U_{\mathrm{vis}}`$ $`=`$ $`4\lambda \sqrt{{\displaystyle \frac{d1}{d}}\left(1+{\displaystyle \frac{c^2}{2\lambda ^2y_{\mathrm{vis}}^d}}+{\displaystyle \frac{kd}{\lambda ^2y_{\mathrm{vis}}}}\right)}.`$ (87)
Here we assume $`z_{\mathrm{vis}}>z_{\mathrm{hid}}`$ and consider the region $`z_{\mathrm{vis}}zz_{\mathrm{hid}}`$. $`y_{\mathrm{hid},\mathrm{vis}}`$ is the value of $`y`$ corresponding to $`z=z_{\mathrm{hid},\mathrm{vis}}`$. From (10), one gets

$$\frac{U_{\mathrm{hid}}}{\varphi }=\frac{2c}{y_{\mathrm{hid}}^{\frac{d}{2}}},\frac{U_{\mathrm{vis}}}{\varphi }=\frac{2c}{y_{\mathrm{vis}}^{\frac{d}{2}}},$$
(88)
which tells that the vacuum energies $`U_{\mathrm{vis}}`$ on the brane depend on the dilaton field.

One can consider the perturbation around the solution (5), (85). As it is difficult to consider the general case, we first investigate the region $`y<y_{\mathrm{vis}}`$ and $`y_{\mathrm{vis}}0`$, that is, the brane is near the singularity. We should note, however, it is sufficient to consider the asymptotic region to check the existence of the normalized zero mode and continuous KK modes. Using (86), when $`y0`$, one gets

$$\zeta \frac{1}{c}\sqrt{\frac{d}{d1}}y^{\frac{d1}{2}}.$$
(89)
This tells that we now consider the region where $`\zeta `$ is small. Since $`A=\frac{1}{2}\mathrm{ln}y`$, Eq.(36) has the following form :

$$0=m^2\psi +_\zeta ^2\psi +\frac{d5}{d1}\frac{1}{\zeta }_\zeta \psi +\frac{4}{(d1)^2}\frac{1}{\zeta ^2}\psi .$$
(90)
When $`m^2=0`$, the solution is given by

$$\psi _0=\zeta ^{\frac{2}{d1}}\left(\stackrel{~}{c}_1+\stackrel{~}{c}_2\mathrm{ln}\zeta \right).$$
(91)
On the other hand, when $`m^2>0`$, we find

$$\psi _m=\zeta ^{\frac{2}{d1}}\left(c_1J_0(m\zeta )+c_2N_0(m\zeta )\right).$$
(92)
The mode corresponding to $`m=0`$ does not seem to be normalizable as in flat dilatonic brane . Then in order to localize the gravity, we need to put a brane corresponding to the hidden sector.

## 6 Quantum effective action for dilatonic brane and RG flow of Newton constant

Our starting point is again the following action of 5d dilatonic gravity (gauged supergravity):

$$S=\frac{1}{16\pi }\left[_Md^{d+1}x\sqrt{g}\left(R\frac{1}{2}_\mu \varphi ^\mu \varphi V(\varphi )\right)\right].$$
(93)
The dilatonic potential is not specified for the moment. As it was discussed in section 2, the very common choice for $`V`$ is the exponential of dilaton: It corresponds to the effective action for the breathing-mode scalar and gravity which follows from KK sphere reduction from M-theory or strings . For the exponential potentials there are singular domain wall solutions in above theory . It is interesting that there are usually problems with localization of 4d gravity when using only the action (93). As a result one should consider the inclusion of four dimensional action (for walls they correspond to wall source terms). Then

$$S_{\mathrm{source}}=\underset{i=\mathrm{hid},\mathrm{vis}}{}d^4x\sqrt{\gamma }\left\{L_{\mathrm{QFT}}\mathrm{e}^{\alpha _i\varphi }+U_i(\varphi )\right\}.$$
(94)
Here $`U_i(\varphi )`$ are vacuum energies on branes, normally $`U_i(\varphi )`$ are dictated by the form of dilatonic potential. For example, if $`V\mathrm{e}^{\kappa \varphi }`$ then $`U_i`$ has also the exponential form. $`L_{\mathrm{QFT}}`$ is an arbitrary Lagrangian corresponding to massless QFT (say, QED, QCD, SM, GUT) which is classically conformally invariant in the background $`\stackrel{~}{g}_{\mu \nu }`$. There is dilaton coupling on the brane which is typical for Brans-Dicke gravity. Usually it is assumed to be invisible in 4d world.

We are going to search for the solutions of the sort

$$ds^2=dz^2+\mathrm{e}^{2A(z)}\stackrel{~}{g}_{ij}dx^idx^j$$
(95)
where 4 dimensional $`\stackrel{~}{g}_{ij}=a^2(\eta )\eta _{ij}`$. It is assumed that branes sit on $`z=z_{\mathrm{hid}}`$ and $`z=z_{\mathrm{vis}}`$.

We integrate over quantum fields in theory (94). Supposing that there is only gravitational background, the interaction of dilaton coupled quantum fields leads to effective action induced by conformal anomaly :

$$\mathrm{\Gamma }_{\mathrm{source}}=\underset{i=\mathrm{hid},\mathrm{vis}}{}V_3𝑑\eta \left\{2b_1\sigma _1\sigma _1^{\prime \prime \prime \prime }2(b_1+b)\left(\sigma _1^{\prime \prime }\sigma _{1}^{}{}_{}{}^{2}\right)^2\right\}$$
(96)
where $`\sigma =\mathrm{ln}a(\eta )`$, $`\sigma _1=A+\sigma +\frac{\alpha _1\varphi }{3}`$. For the sake of simplicity, we adopt the large $`N`$-expansion (that justifies the neglecting of proper quantum gravity contribution to (96)). If spinors give the leading contribution then $`b=\frac{3N_{\frac{1}{2}}}{60(4\pi )^2}`$, $`b_1=\frac{11N_{\frac{1}{2}}}{360(4\pi )^2}`$. One can take the contribution above as corresponding to maximally SUSY Yang-Mills theory (which only changes the coefficients of above effective action). That corresponds to implementing above compactification to AdS/CFT scheme. Note that the suggestion to take into account the boundary matter quantum effects (via conformal anomaly induced effective action for SUSY Yang- Mills theory) in brane-world scenario has appeared in ref.. It was shown the possibility of creation of de Sitter or Anti-de Sitter 4d Universe in 5d AdS space. In ref.  the same idea on application of conformal anomaly has been expressed and effective brane tension due to such boundary quantum contribution for 4d de Sitter world has been found.

Thus our complete action will be given by sum of three terms:

$$S_{\mathrm{complete}}=S+\mathrm{\Gamma }_{\mathrm{source}}+\underset{i=\mathrm{hid},\mathrm{vis}}{}V_3𝑑\eta \mathrm{e}^{4A}a^4(\eta )U_i(\varphi ).$$
(97)
One can now consider the solution of the equations of motion given from the action (97). In the bulk 5d universe, the action is identical with the previous one (1), then the solutions in the bulk are also given by the previous ones. Especially when $`V(\varphi )`$ is a constant, we obtain the solution in (5). Near the brane, however, one obtains the following equations for $`d=D1=4`$ instead of (9) :

$`\varphi ^{\prime \prime }`$ $``$ $`\left[{\displaystyle \frac{U_i(\varphi )}{\varphi }}+{\displaystyle \frac{\alpha _1}{3}}\mathrm{e}^{4A}\left\{4b_1\sigma _1^{\prime \prime \prime \prime }4(b+b_1)(\sigma _1^{\prime \prime \prime \prime }6\sigma _{1}^{}{}_{}{}^{2}\sigma _1^{\prime \prime })\right\}\right]\delta (zz_i),`$
$`A^{\prime \prime }`$ $``$ $`{\displaystyle \frac{1}{6}}\left\{U_i(\varphi )4b_1\sigma _1^{\prime \prime \prime \prime }4(b+b_1)(\sigma _1^{\prime \prime \prime \prime }6\sigma _{1}^{}{}_{}{}^{2}\sigma _1^{\prime \prime })\right\}\delta (zz_i).`$ (98)
Then by substituting the solution in (5), (86), we find $`U_i`$ and $`\frac{U_i}{\varphi }`$ become time dependent:

$`U_{\mathrm{hid}}`$ $`=`$ $`4\lambda \sqrt{{\displaystyle \frac{3}{4}}\left(1+{\displaystyle \frac{c^2}{2\lambda ^2y_{\mathrm{hid}}^4}}+{\displaystyle \frac{4k}{\lambda ^2y_{\mathrm{hid}}}}\right)}{\displaystyle \frac{6b_1y_{\mathrm{hid}}^2}{t^4}}`$
$`U_{\mathrm{vis}}`$ $`=`$ $`4\lambda \sqrt{{\displaystyle \frac{3}{4}}\left(1+{\displaystyle \frac{c^2}{2\lambda ^2y_{\mathrm{vis}}^4}}+{\displaystyle \frac{4k}{\lambda ^2y_{\mathrm{vis}}}}\right)}{\displaystyle \frac{6b_1y_{\mathrm{vis}}^2}{t^4}}`$
$`{\displaystyle \frac{U_{\mathrm{hid}}}{\varphi }}`$ $`=`$ $`{\displaystyle \frac{2c}{y_{\mathrm{hid}}^{\frac{d}{2}}}}{\displaystyle \frac{8\alpha _1b_1y_{\mathrm{hid}}^2}{t^4}}`$
$`{\displaystyle \frac{U_{\mathrm{vis}}}{\varphi }}`$ $`=`$ $`{\displaystyle \frac{2c}{y_{\mathrm{vis}}^{\frac{d}{2}}}}{\displaystyle \frac{8\alpha _1b_1y_{\mathrm{vis}}^2}{t^4}}.`$ (99)
Hence, the price one paids for keeping the same de Sitter brane-world solution is in change of brane vacuum energies. Quantum corrections explicitly give contribution to vacuum energies which become time-dependent (or dependent from the radius of de Sitter space in radial coordinates). That indicates that effective brane tension will be changed.

Let us discuss now RG flow of 4d Newton constant (for a recent review of holographic RG, see ). Using (22) for the solution in (5) for $`d=4`$, we find

$$\frac{1}{\stackrel{~}{G}_4}=\frac{1}{G_5}_{y_{\mathrm{hid}}}^{y_{\mathrm{vis}}}𝑑y\frac{\sqrt{3}}{\lambda \sqrt{1+\frac{c^2}{2\lambda ^2y^4}+\frac{kd}{\lambda ^2y}}}.$$
(100)
If we define $`U`$ by $`y_{\mathrm{vis}}=U^2`$, we can identify $`U`$ with the energy scale on the visible brane from AdS/CFT correspondence . Therefore Eq.(100) expresses the scale dependence of the gravitational coupling. When $`U`$ ($`y_{\mathrm{vis}}`$) is small, we find

$$\frac{1}{\stackrel{~}{G}_4}\frac{1}{G_5}\frac{\left(y_{\mathrm{vis}}^3y_{\mathrm{hid}}^3\right)}{c\sqrt{3}}=\frac{1}{G_5}\frac{\left(U^6y_{\mathrm{hid}}^3\right)}{c\sqrt{3}}.$$
(101)
Therefore the gravitational coupling $`\stackrel{~}{G}_4`$ becomes large in the IR region, which would be due to the curvature singularity at $`y=0`$. On the other hand, when $`U`$ ($`y_{\mathrm{vis}}`$) is large, we find

$$\frac{1}{\stackrel{~}{G}_4}\frac{1}{G_5}\frac{\sqrt{3}}{\lambda }\left(y_{\mathrm{vis}}+Y(y_{\mathrm{hid}})\right)=\frac{1}{G_5}\frac{\sqrt{3}}{\lambda }\left(U^2+Y(y_{\mathrm{hid}})\right).$$
(102)
Here $`Y`$ depends on $`y_{\mathrm{hid}}`$ but does not on $`y_{\mathrm{vis}}`$. Eq.(102) seems to tell that the gravitational coupling $`\stackrel{~}{G}_4`$ becomes small in the UV region.

We can also consider the scale dependence of the Newton constant for the black hole type solution in Section 2. If the scale $`U=\mathrm{e}^{A(z=z_{\mathrm{vis}})}`$ is small (IR region), $`z_{\mathrm{vis}}`$ becomes negative and large. Then from (24) and (22), we find

$`U`$ $``$ $`\mathrm{e}^{\gamma z_{\mathrm{vis}}},`$
$`{\displaystyle \frac{1}{\stackrel{~}{G}_4}}`$ $`=`$ $`{\displaystyle \frac{1}{G_5}}{\displaystyle ^{z_{\mathrm{vis}}}}𝑑z\mathrm{e}^{2A}{\displaystyle \frac{1}{G_5}}{\displaystyle ^{z_{\mathrm{vis}}}}𝑑z\mathrm{e}^{2\gamma z}={\displaystyle \frac{1}{G_5}}{\displaystyle \frac{\mathrm{e}^{2\gamma z_{\mathrm{vis}}}}{2\gamma }}={\displaystyle \frac{1}{G_5}}{\displaystyle \frac{U^2}{2\gamma }}.`$ (103)
Here we assumed $`z_{\mathrm{vis}}>z_{\mathrm{hid}}\mathrm{}`$ and put the constant of the integration to vanish. Therefore $`\stackrel{~}{G}_4`$ becomes large in the IR region. On the other hand, when the scale $`U=\mathrm{e}^{A(z=z_{\mathrm{vis}})}`$ is large (UV region), $`z_{\mathrm{vis}}`$ becomes positive and large. By using (26), we obtain

$`U`$ $``$ $`\alpha z_{\mathrm{vis}}^\beta ,`$
$`{\displaystyle \frac{1}{\stackrel{~}{G}_4}}`$ $``$ $`{\displaystyle \frac{1}{G_5}}{\displaystyle ^{z_{\mathrm{vis}}}}𝑑z\alpha ^2z^{2\beta }={\displaystyle \frac{1}{G_5}}\left({\displaystyle \frac{\alpha ^2z_{\mathrm{vis}}^{2\beta +1}}{2\beta +1}}+\stackrel{~}{Y}(y_{\mathrm{hid}})\right)`$ (104)
$`=`$ $`{\displaystyle \frac{1}{G_5}}\left({\displaystyle \frac{U^{2+\frac{1}{\beta }}}{(2\beta +1)\alpha ^{\frac{1}{\beta }}}}+\stackrel{~}{Y}(y_{\mathrm{hid}})\right).`$
Here $`\stackrel{~}{Y}`$ depends on $`y_{\mathrm{hid}}`$ but does not on $`y_{\mathrm{vis}}`$. For $`d=D1=4`$ and $`𝒩=1`$ model in , we have $`2+\frac{1}{\beta }=\frac{18}{5}`$. Therefore the gravitational coupling $`\stackrel{~}{G}_4`$ becomes small in the UV region again. We should note that the parameters specifying the black hole on the brane do not enter in the above expressions (6) and (6), which is significantly different from the case that there is a black hole in the bulk .

## 7 Discussion

In summary, we presented the family of brane-world solutions of 5d dilatonic gravity. This family includes flat brane with effectively small cosmological constant, (anti) de Sitter and Nariai spaces, and brane-world dilatonic black holes. The study of gravity perturbations around such black holes shows that 4d gravity may be trapped. Corrections to Newton law near branes are calculated. The proposal to take into account brane matter quantum effects is made.( Actually, such proposal presented earlier in refs.  helps to formulate the problem in terms of AdS/CFT.) The corresponding anomaly induced effective action is used to estimate the role of quantum effects in realization of de Sitter branes in asymptotically AdS dilatonic space. It is demonstrated that quantum corrections change the brane vacuum energies. RG flow of Newton constant in IR and UV is discussed.

There are many related problems which are left for future study. In particular, it looks that the picture under discussion should be realized within AdS/CFT correspondence. As it has been partially demonstrated it is possible to do (at least in case of de Sitter brane). However, the details of such quantum corrected brane-world Universe should be investigated deeply. The research of the role of brane matter quantum effects to black holes is also extremely interesting topic. Another open problem is the correct interpretation of dilatonic brane-world black holes as holographic RG flows. The presented example of RG flow of 4d Newton constant for dilatonic black hole represents the modest step in this direction.

## 8 Acknoweledgements.

We thank M.Ryan for the interest in this work. This research has been supported in part by CONACyT grant 2845E.


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# Modal field theory and quasi-sparse eigenvector diagonalization

## 1 Introduction

Of the many approaches to non-perturbative quantum field theory, we can identify two general computational strategies. The first is the method of Monte Carlo. The main advantages of this approach is that it can treat many higher dimensional field theories, requires relatively little storage, and can be performed with massively parallel computers. The other strategy is the method of explicit diagonalization. The strong points of this method are that it is immune to the fermion sign problem, can handle complex-valued actions, and yields direct information about the spectrum and eigenstate wavefunctions.

Modal field theory is a simple Hamiltonian framework which can accomodate either computational strategy. The first step is to approximate field theory as a finite-dimensional quantum mechanical system. The approximation is generated by decomposing field configurations into free wave modes and has been explored using both spherical partial waves  and periodic box modes . From there we can analyze the properties of the reduced system using Monte Carlo, diagonalization, or some other computational method. In this short review we present two different approaches using the modal field formalism which address the example of $`\varphi ^4`$ theory in $`1+1`$ dimensions. We begin with a summary of the Monte Carlo calculation of the critical behavior of $`\varphi ^4`$ theory in Euclidean space. We then discuss the computational challenges of a diagonalization-based approach and conclude with a calculation of the lowest energy states of the theory using a diagonalization technique known as the quasi-sparse eigenvector method.

## 2 Monte Carlo

In this section we review the basic features of modal field theory in a periodic box and discuss spontaneous symmetry breaking in Euclidean two-dimensional $`\varphi ^4`$ theory using the method of diffusion Monte Carlo. The field configuration $`\varphi `$ is subject to periodic boundary conditions $`\varphi (t,xL)=\varphi (t,x+L).`$ Expanding in terms of periodic box modes, we have

$$\varphi (t,x)=\sqrt{\frac{1}{2L}}\underset{n=0,\pm 1,\mathrm{}}{}\varphi _n(t)e^{in\pi x/L}.$$
(1)
The sum over momentum modes is regulated by choosing some large positive number $`N_{\mathrm{max}}`$ and throwing out all high-momentum modes $`\varphi _n`$ such that $`\left|n\right|>N_{\mathrm{max}}`$. In this theory renormalization can be implemented by normal ordering the $`\varphi ^4`$ interaction term. After a straightforward calculation (details shown in ), we find that the counterterm Hamiltonian has the form

$$\frac{6\lambda b}{4!2L}\underset{n=N_{\mathrm{max}},\mathrm{}N_{\mathrm{max}}}{}\varphi _n\varphi _n,$$
(2)
where

$$b=\underset{n=N_{\mathrm{max}},\mathrm{}N_{\mathrm{max}}}{}\frac{1}{2\omega _n},\omega _n=\sqrt{\frac{n^2\pi ^2}{L^2}+\mu ^2}.$$
(3)
We represent the canonical conjugate pair $`\varphi _n`$ and $`\frac{d\varphi _n}{dt}`$ using the Schrödinger operators $`q_n`$ and $`i\frac{}{q_n}`$. Then the functional integral for $`\varphi ^4`$ theory is equivalent to that for a quantum mechanical system with Hamiltonian

$`H`$ $`={\displaystyle \underset{n=N_{\mathrm{max}},\mathrm{}N_{\mathrm{max}}}{}}\left[\frac{1}{2}\frac{}{q_n}\frac{}{q_n}+\frac{1}{2}(\omega _n^2\frac{\lambda b}{4L})q_nq_n\right]`$ (4)
$`+\frac{\lambda }{4!2L}{\displaystyle \underset{{\scriptscriptstyle \genfrac{}{}{0.0pt}{}{n_i=N_{\mathrm{max}},\mathrm{}N_{\mathrm{max}}}{n_1+n_2+n_3+n_4=0}}}{}}q_{n_1}q_{n_2}q_{n_3}q_{n_4}.`$
The existence of a second-order phase transition in two-dimensional $`\varphi ^4`$ theory has been discussed in the literature . The phase transition is due to $`\varphi `$ developing a non-zero expectation value and the spontaneous breaking of $`\varphi \varphi `$ reflection symmetry. It is believed that this theory belongs to the same universality class as the two-dimensional Ising model and therefore shares the same critical exponents. From the Ising model we expect to find

$$\nu =1,\beta =\frac{1}{8}.$$
(5)
$`\nu `$ is the exponent associated with the inverse correlation length or, equivalently, the mass of the one-particle state, $`m`$. It is defined by the behavior of $`m`$ near the critical coupling $`\lambda _c,`$

$$m(\lambda _c\lambda )^\nu .$$
(6)
We determine the behavior of the mass as we approach the critical point from the symmetric phase of the theory. All computations are done using the method of diffusion Monte Carlo (DMC). The idea of DMC is to model the dynamics of the imaginary-time Schrödinger equation using the diffusion and decay/production of simulated particles. The kinetic energy term in the Hamiltonian determines the diffusion rate of the simulated particles and the potential energy term determines the local decay/production rate. A self-contained introduction to DMC can be found in .

$`\beta `$ is the critical exponent describing the behavior of the vacuum expectation value. In the symmetric phase the vacuum state is unique and invariant under the reflection transformation $`\varphi \varphi `$ (or equivalently $`q_nq_n,`$ for each $`n`$). In the broken-symmetry phase the vacuum is degenerate as $`L\mathrm{}`$, and $`q_0`$, the zero-momentum mode, develops a vacuum expectation value. In the $`L\mathrm{}`$ limit tunnelling between vacuum states is forbidden. One ground state, $`|0^+,`$ is non-zero only for values $`q_0>0`$ and the other, $`|0^{}`$, is non-zero only for $`q_0<0`$. We will choose $`|0^+`$ and $`|0^{}`$ to be unit normalized. We can determine $`\beta `$ from the behavior of the vacuum expectation value as we approach the critical coupling,

$$0^+\left|\varphi \right|0^+(\lambda \lambda _c)^\beta .$$
(7)
In our calculations we used $`(L,N_{\mathrm{max}})=(2.5\pi ,`$ $`8),(2.5\pi ,`$ $`10),(5\pi ,`$ $`16),`$ and $`(5\pi ,`$ $`20).`$ For convenience we measure all quantities in units where $`\mu =1`$. For each set of parameters $`L`$ and $`N_{\mathrm{max}},`$ the curves for $`m`$ and $`0^+\left|\varphi \right|0^+`$ near the critical coupling were fitted using the parameterized forms

$$m=a\left(\frac{\lambda _c^m}{4!}\frac{\lambda }{4!}\right)^\nu $$
(8)
and

$$0^+\left|\varphi \right|0^+=b\left(\frac{\lambda }{4!}\frac{\lambda _c^\varphi }{4!}\right)^\beta .$$
(9)
Combining the results for the various values of $`L`$ and $`N_{\mathrm{max}}`$ and taking into account finite-size effects, we can extrapolate to the $`L`$, $`N_{\mathrm{max}}\mathrm{}`$ limit. The results we find are

$`\frac{\lambda _c^m}{4!}`$ $`=2.5\pm 0.2\pm 0.1,\nu =1.3\pm 0.2\pm 0.1,a=0.43\pm 0.05\pm 0.02,`$ (10)
$`\frac{\lambda _c^\varphi }{4!}`$ $`=2.5\pm 0.1\pm 0.1,\beta =0.13\pm 0.02\pm 0.01,b=0.71\pm 0.04\pm 0.03.`$
The first error bounds include inaccuracies due to Monte Carlo statistics, higher energy states (for the mass curves), and extrapolation. The second error bounds represent estimates of the systematic errors due to our choice of initial state, time step parameter, and bin sizes in the DMC simulations. Our results for the critical exponents are consistent with the Ising model predictions (5). The results for the critical coupling $`\frac{\lambda _c^m}{4!}`$ and $`\frac{\lambda _c^\varphi }{4!}`$ are in agreement with a recent lattice computation

$$\frac{\lambda _c}{4!}=2.56_{.01}^{+.02}$$
(11)
as well as the discrete light-cone quantization result

$$\frac{\lambda _c}{4!}\frac{(3+\sqrt{3})\pi }{6}2.48.$$
(12)
## 3 Diagonalization

In principle diagonalization techniques can provide significant detailed information about a quantum system. The basic idea is to diagonalize the Hamiltonian matrix defined over a truncated finite-dimensional Fock space. In practise however few field theories are computationally feasible and typically only theories in $`1+1`$ dimensions. Sparse matrix techniques such as the Lanczos or Arnoldi schemes allow us to push the dimension of Fock space to about 105 or 106 states. This may be sufficient to do accurate calculations for $`\varphi _{1+1}^4`$ theory near the critical point $`\frac{\lambda }{4!}2.5`$ for larger values of $`L`$ and $`N_{\mathrm{max}}.`$ It is, however, near the upper limit of what is possible using current computer technology and existing algorithms. Unfortunately field theories in $`2+1`$ and $`3+1`$ dimensions will require much larger Fock spaces, probably at least 1012 and 1018 states respectively. In order to tackle these larger Fock spaces it is necessary to venture beyond standard diagonalization approaches.

In view of this difficulty one could ask how the Monte Carlo method avoids this problem. The answer is by means of importance sampling. While the space of all configurations is impossibly large, it is often adequate to sample only the most important configurations. Unfortunately Monte Carlo techniques are not effective for a number of important problems. These include systems with dynamical fermions and computations involving complex-valued actions. In general difficulties arise when the functional integral measure is not positive definite and produce contributions with oscillating signs or phases.

In  a new importance sampling method was proposed for use within a diagonalization scheme. The aim was to exploit the extreme sparsity of the Hamiltonian matrix, a result of the restricted form that characterizes local renormalizable interactions. If $`N`$ is the number of non-zero entries per row or column in the Hamiltonian matrix, it is shown in  that a typical eigenvector is dominated by its largest $`\sqrt{N}`$ elements. There are some exceptions to this rule related to degeneracies which are discussed in . The algorithm for diagonalizing $`H`$ is as follows. We start by choosing a set of orthonormal basis vectors such that the Hamiltonian matrix $`H_{ij}`$ is sparse and the eigenvectors are quasi-sparse. The term quasi-sparse indicates that the norm of a vector is dominated by the contribution from a small fraction of its components. The remaining steps are as follows:

1. Select a subset of basis vectors $`\{e_{i_1},\mathrm{},e_{i_n}\}`$ and call the corresponding subspace $`S`$.
2. Diagonalize $`H`$ restricted to $`S`$ and find one eigenvector $`v.`$
3. Sort the basis components $`e_{i_j}|v`$ according to absolute size and throw away the least important basis vectors.
4. Replace the discarded basis vectors by new basis vectors. These are selected at random from a pool of candidate basis vectors which are connected to the old basis vectors through non-vanishing matrix elements of $`H`$.
5. Redefine $`S`$ as the subspace spanned by the updated set of basis vectors and repeat steps 2 through 5.

If the subset of basis vectors is sufficiently large, the exact eigenvectors will be stable fixed points of the update process. We will refer to this diagonalization technique as the quasi-sparse eigenvector (QSE) method.

We now test the QSE method on $`\varphi ^4`$ theory in $`1+1`$ dimensions. The theory can be treated rather well using conventional sparse matrix techniques and a Fock space of about 106 states. However the test we propose will be more stringent. The size of Fock space and the number of non-zero transitions per state for $`\varphi ^4`$ theory in $`3+1`$ dimensions are the cubes of the corresponding numbers in $`1+1`$ dimensions. Therefore a more useful test is to solve the $`1+1`$ dimensional system in a manner that can be directly generalized and expanded to the $`3+1`$ dimensional problem. Setting an upper limit of $`10^6`$ states for the $`3+1`$ dimensional case, we will attempt to solve the $`1+1`$ dimensional system using no more than 10$`0`$ (cube root of 106) basis vectors at a time.

We again use the Hamiltonian in (4) and set $`L=5\pi `$ and $`N_{\mathrm{max}}=20`$. This corresponds with a momentum cutoff scale of $`\mathrm{\Lambda }=4.`$ We also place auxiliary constraints on the states in our momentum Fock space. We keep only those states with $`13`$ particles and kinetic energy $`2\mathrm{\Lambda }`$. A precise definition of the kinetic energy cutoff is provided in , and in terms of the parameter $`K_{\mathrm{max}}`$ introduced there we use $`K_{\mathrm{max}}=41`$. In our calculations we also restrict our attention to the zero momentum sector.

With these constraints our Fock space contains about $`2\times 10^6`$ states and the Hamiltonian matrix has about $`10^3`$ transitions per state. However, we will restrict our QSE calculation to include only 100 basis vectors at a time. Results for the energy eigenvalues are shown in Fig. 1. From our Monte Carlo calculation we know that the theory has a phase transition at $`\frac{\lambda }{4!}2.5`$ corresponding with spontaneous breaking of the $`\varphi \varphi `$ reflection symmetry. In the broken phase there are two degenerate ground states and we refer to these as the even and odd vacuum states. In Fig. 1 we see signs of a second order phase transition near $`\frac{\lambda }{4!}2.5`$. Since we are working in a finite volume the spectrum is discrete, and we can track the energy eigenvalues as functions of the coupling. Crossing the phase boundary, we see that the vacuum in the symmetric phase becomes the even vacuum in the broken phase while the one-particle state in the symmetric phase becomes the odd vacuum. The energy difference between the states is also in agreement with the Monte Carlo calculation of the same quantities. The state marking the two-particle threshold in the symmetric phase becomes the one-particle state above the odd vacuum, while the state at the three-particle threshold becomes the one-particle state above the even vacuum. These one-particle states should be degenerate in the infinite volume limit. One rather unusual feature is the behavior of the first two-particle state above threshold in the symmetric phase. In the symmetric phase this state lies close to the two-particle threshold. But as we cross the phase boundary the state which was the two-particle threshold is changed into a one-particle state. Thus our two-particle state is pushed up even further to become a two-particle state above the even vacuum and we see a pronounced level crossing.

A conventional sparse matrix algorithm would require about $`10`$ GB RAM and 105 Gflops to determine the energy and wavefunctions of the lowest lying states for this system. The QSE method was able to perform the same task with about $`30`$ KB RAM and 102 Gflops. The reductions in floating point operations and memory are about three and six orders of magnitude respectively and show the advantages of QSE diagonalization over other numerical techniques. Other large non-perturbative systems should now also be amenable to numerical solution using this method.

## Acknowledgments

I thank my collaborators on the works cited here and the organizers and participants of the Workshop on Light-Cone QCD and Nonperturbative Hadron Physics in Adelaide. Financial support provided by the National Science Foundation.


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# 1. Some properties of inherent oscillations and waves

## 1. Some properties of inherent oscillations and waves

The traditional models of molecules and crystals in which the atoms are replaced by physical points with masses of atoms do not correspond to adiabatic Born-Oppenheimer’s theory  and do not give opportunities to study inherent oscillations. The opportunity of inherent oscillations and waves existence in the condensed materials can be proved by using of adiabatic model of solids . In such model each atom is submitted as a nucleus and electron shell connected with each other by elastic force and capable to carry out oscillatory movements ($`\alpha `$ type of oscillations). Each atom in adiabatic model of a crystal can be submitted as inherent $`\alpha `$ oscillator consisting from a nucleus and electron shell. Elastic force of inherent oscillator is almost proportional to displacement of a nucleus from the centre of an electron shell. The value of appropriate factor depend on electrical potential field which is created by electron shell near her centre. The frequency of inherent oscillations depends on conditions in which there is an atom. In particular the collective properties of electrons in a crystal can be expressed so that their displacements (displacements of electron shells) are coherent (synchronous), within the some length ($`\lambda `$) and the coherent area acquire superconductive properties. The size $`\lambda `$ can exceed tens of space lattice and to achieve significant size. In such conditions the nucleus of each atom has an opportunity to oscillate relatively common mass of coherent area. The amplitude of a nucleus oscillations is insignificant $`(10^2A^0)`$.

The energy spectrum of ($`\alpha `$type) inherent oscillations in harmonic approach can be presented by the expression

$$E_\upsilon =E_\alpha (1/2+\upsilon )$$
(1)
where oscillatory quantum number $`\upsilon `$ = 0, 1, 2…, the elementary oscillatory quantum is defined by mass of a nucleus $`M_z`$ with number Z: $`E_\alpha =\mathrm{}(\zeta /M_z)^{1/2}`$, $`\zeta `$\- factor connecting force with displacement of a nucleus from an equilibrim position at the centre of an electronic envelop, $`\mathrm{}`$=h/$`(2\pi )`$, h - Plank’s constant. According to accounts (conformable to experimental data) at increasing Z magnitude $`E_\alpha `$ decreases from 0.402 eV at Z = 2 up to 0.22 eV at Z = 8 and then increase up to 0.406 eV at Z = 80. The inherent oscillations of a $`\beta `$\- type caused by joint displacements of nucleus and K - electron subshell relatively other part of an electron shell and also inherent oscillations of a $`\gamma `$\- type caused by joint displacement of a nucleus, K - and L - electron subshells relatively other part of an electron shell of atom are possible also. The elementary quantums of inherent oscillations $`\beta `$\- and $`\gamma `$\- types are less than the appropriate quantums of $`\alpha `$\- oscillations: $`E_\alpha >E_\beta >E_\gamma `$. Thus energy of some inherent oscillations with small $`\upsilon `$ in a crystal can not exceed energies of the solved electron transitions between various electronic states i and j: $`E_\upsilon <|E_iE_j|`$. This inequality is a condition of applicability an adiabatic principle in correspondence with . Thus in adiabatic approach in the condensed materials the inherent oscillations $`\alpha `$-, $`\beta `$\- and $`\gamma `$\- types can exist and propagate. They represents the oscillatory displacement of nucleuses relatively electronic environments. The speeds of inherent oscillations waves can achieve speed of a sound.

The theoretical opportunity of existence of inherent oscillations and waves followed from adiabatic model of a crystal, based on adiabatic Born-Oppenheimer’s principle, is confirmed by experimental data about temperature dependence of crystals resistivity, about phonon drag at high temperatures and about optical electron-vibrational spectra formed with participation of inherent oscillations. The energy levels of inherent oscillations are shown as deep energy levels and the electron transitions between these levels or on these levels or from these levels are electron-vibrational. Electron-vibrational transitions are accompanied by absorption or emission several (on the average S) crystal phonons, where S - constant of electron-phonon interaction.

The following ways of excitation of inherent oscillations can be practically important:

\- thermal, at the expense of phonons energy;

\- optical, at the expense of absorbed photons energy;

\- shock , for the account of kinetic energy of (hot) electrons or holes;

\- recombination , at the expense of energy recombination ;

\- combined, as a combination of two or several specified ways.

In semiconductors it is convenient to raise inherent oscillations at the expense of recombination energy of electrons (holes). For this purpose is necessary rather strong interaction of electrons with lattice oscillations. The constant S equal to an average number of phonons participating in the act of electron-phonon interaction and serves a measure of electron interactions with phonons. The size S in ideal silicon monocrystal calculated on the data on meaning of deformation potential constants does not exceed 0.03 for optical phonons and 0.15 for acoustic phonons . Hence excitation of inherent oscillations at the expense of interaction with electrons in ideal crystals is rare event that are in agreement with adiabatic theory according to which electrons and the oscillations of a lattice in an ideal crystal do not interact with each other. The effective production of inherent oscillations at the expense of recombination energy is possible in crystals containing such defects of a lattice for which the strong interaction of electrons with phonons is characteristic. These defects have received the name of the electron-vibrational centres (EVC). EVC are the Jan-Teller’s centres. They represents local defects of a crystal which equilibrum position or frequencies of oscillations depends on their electronic condition. For EVC the large meanings S ($`S>1`$) are characteristic. According to the theory - the quantity of S is close to an average phonons participating in electron-vibrational transition to energy levels of EVC. By the theoretical estimations S can exceed 50. The inherent oscillations of atoms of the basic substance can exist and to spread in crystals and crystal structures but effectively to raise such fluctuations and waves at the expense of electrons or holes energy is possible at presence EVC. In this connection the inherent oscillations and waves caused by atoms of the basic substance and also inherent oscillations and waves caused by impurity atoms are possible in crystals.

## 2. Impurity oxygen atoms in silicon

Impurity oxygen atoms in silicon monocrystals are electrical inactive and their presence can be established on characteristic optical absorption on length of a wave about 9 micrometer -.The intensity of the specified band of absorption reflects the contents of oxygen atoms on an optical path in a crystal. The increase of concentration of oxygen in silicon is accompanied by occurrence of quartz disseminations and by displacements of a maximum of the characteristic optical band of absorption to 10…11micrometers . This absorption is characteristic for Si oxides and it is explained traditionally in the literature by optical excitation of chains Si-O-Si oscillations. In the monography  (p. 179) was shown convincingly that the reason of the specified optical band which determine a kind of a spectrum in the field of 9…11 micrometers consist not simply in specified chains of atoms but is contained in structure of a lattice (probably in structural defects containing atoms of oxygen). The similar bands of optical absorption in the specified spectral area are characteristic for oxides of InAs, InSb, InP  and oxides of other semiconductors that also allows to connect these bands with defects of a lattice containing atoms of oxygen. Moreover there are weighty bases to believe that these defects containing atoms of oxygen are the Jan-Teller’s centres and they are EVC.

The presence of EVC inherent oscillators determine an optical properties of crystals. The oscillatory model describing optical spectra of crystals and supposing interaction of oscillators with a wide set of crystal phonons is stated in . In accordance to  the optical reflectivity

$$R_{\mathrm{}}=\frac{(n1)^2+k^2}{(n+1)^2+k^2},$$
(2)
where n - optical factor of refraction and k - parameter of absorption are defined from the following expressions:

$$n^2k^2=\epsilon _{opt}+\omega _p^2\frac{\mathrm{\Omega }^2\omega ^2}{(\mathrm{\Omega }^2\omega ^2)^2+\omega ^2\nu ^2};$$
(3)
$$2nk=\omega _p^2\frac{\omega \nu }{(\mathrm{\Omega }^2\omega ^2)^2+\omega ^2\nu ^2},$$
(4)
where: $`\mathrm{\Omega }`$ \- frequency of oscillator, $`\nu `$ \- frequency of phonon, $`\omega `$ \- optical frequency, $`\omega _p=\sqrt{Ne^2/(M\epsilon _0)}`$, N - concentration of oscillators, e - charge of oscillator, M - mass of oscillator, $`\epsilon _0`$ \- electrical constant, $`\epsilon _{opt}`$ \- optical dielectric permeability. The optical reflection spectra of silicon oxides and reflection spectra of specified semiconductors oxides can be presented as sum of separate oscillators reflection spectra. Such decomposition of a spectrum corresponds to the quantum theory . These theories can be applied to the analysis of IR reflection by inherent oscillators of EVC.

Every separate oscillator have ”zero” frequency of oxygen inherent $`\alpha `$ \- oscillators ($`\mathrm{}\mathrm{\Omega }`$ = 0.11 eV) which cooperate mainly with various lattice frequencies between $`\mathrm{\Omega }`$ and $`\omega _p`$. The greatest contribution in oxydes reflection spectra is brought by frequencies appropriate to ”zero” fluctuations of inherent oxygen oscillators and phonons for which ($`\mathrm{\Omega }/\omega _p`$) = 0.25, $`\epsilon _{opt}`$=1.2, G/$`\mathrm{\Omega }`$=0.011, G - factor of attenuation. The rather small meaning $`\epsilon _{opt}`$ allows to carry him only to the local centre but not to all crystal. The experimental spectrum of polarized light reflection and calculated on the Eq. (2-4) spectrum of reflection are given on fig. 1. The experimental spectrum was measured at a corner of fall of the linearly polarized radiation of 45 degrees for oriented along an axis C quartz monocrystal. The comparison of spectra submitted in a fig. 1 specifies presence of oscillators in quartz with oscillatory energy which is equal to energy of ”zero” oscillations of inherent oxygen oscillators, calculated on the Eq. (1) at $`\upsilon `$ = 0 for atom of oxygen. Such transitions with frequency of ”zero” oscillations are forbidden for quantum oscillator but EVC are capable to show duality of properties . The conditions in a minimum of oscillator potential and transitions with frequency of ”zero” oscillations for EVC are accordingly allowable. The excess of experimental absorption above calculated absorption at energies of quantums more than 0.11 eV is determined by the contribution with participation of frequencies $`\omega _p`$ conterminous with frequencies of inherent $`\alpha `$\- oxygen oscillators calculated on the Eq. (1) at other meanings of $`\upsilon `$. The same conclusion can be made as a result of similar approach of reflection spectra for melted quartz, silicate glasses and oxides of a number of semiconductors. According to this result the optical band which is characteristic for quartz and others oxides of semiconductors is possible to identify with excitation of ”zero” inherent oscillations of oxygen atom ($`\upsilon `$ = 0).

Impurity atoms of oxygen in silicon irradiated by radiation formes associations with vacancies of a crystal lattice known as A-centres. As a result of study of electron spin resonance spectra and his dependence from orientation data and about energy levels of defects, items of information on a situation of oxygen atoms in silicon lattice in  the model of A-centre was constructed. A-centre represents anisotropic defect whose electrical dipole moment is directed lengthways . A-centre have deep electron-vibrational energy levels in the forbidden energy zone of silicon which are distant from boundaries ($`E_c`$ and $`E_v`$) of the forbidden energy zone on sizes multiple 0.11 eV and are close to calculated on the Eq. (1) for oxygen atom. It allows to identify them with inherent $`\alpha `$-oscillations of oxygen atoms. Acceptor $`E_c`$ \- (0.16…0.22) eV and donor $`E_v`$ \+ (0.27…0.33) eV levels are most active at low concentration of A - centres. These levels are close to the calculated energy levels of inherent oscillations of oxygen atom. Specified changes of the energy levels are explained by change of complete oscillatory energy of A - centre caused by the interaction of the centres with each other at changing of their concentration from $`510^{17}cm^3`$ up to $`10^{13}cm^3`$ and depends on average distance (R) between them as $`R^3`$. It coordinates with aeolotropic structure of A - centre and specifies one-dimensional character of interaction between them. The given result corresponds to oscillatory model of A-centre as one-dimensional oscillator that justifies application Eq. (1) for the description of his electron-vibrational energy levels.

The application of the linearly polarized radiation and monocrystals with rather low concentration of EVC allows to create necessary conditions for measurement of electron-vibrational spectra with participation of one phonons type. Such spectra may be analysed on the basis of the Pekar-Huang- Rhys theory  \- . The typical spectra of photoconductivity and optical transmittance connected with photoionization of A - centre by polarized IR radiation with an electrical vector E $``$  are given on a fig. 2. One can see on fig. 2 that spectra are modulated by phonons. The minima of optical transmittance (maxima of optical absorption) correspond to minima of photoconductivity. The established conformity of extremums in spectra of photoconductivity and absorption  is explained by characteristic negative photoconductivity when electron-vibrational transitions (from valence band on A - centre) occur and proves the fact of auto localization of electrons and holes on EVC simultaneously. If EVC interacts only with one type ocillations of a lattice (similar to spectra on a fig. 2) then in according to  the spectral distribution of electron-vibrational transitions depends from S, function Bose ($`f`$), contains product of the modified Bessel’s function of the order p on $`_n\delta `$(n-p) , where n = 1, 2,… and $`\delta `$ \- delta function, p - number of phonons participating in electron-vibrational transition. Because of presence $`\delta `$ \- functions p accepts only integer meaning. p$`>`$0 corresponds to absorption of optical quantum and p$`<`$0 corresponds to radiation of optical quantum with emission of p phonons. Accordingly spectrum contains two wings adequate electron-vibrational transitions with absorption and emission of phonons. One wing lays below than energy of transition without phonons (p$`=`$0) another wing lays higher than energy of transition without phonons. The wing of a spectrum appropriate to absorption phonons disappears with downturn of temperature . At participation of one type phonons the spectrum represents a series of discrete lines which energy differ on size multiple phonons. Expression for spectral distribution includes only one parameter S. Size of S may be selected to approach conveniently a contour of an experimental spectrum and thus to determine S. The number of phonons which are emitted by the centre in a maximum of an optical band is equal S. The energy level on which the electron-vibrational transition is carried out corresponds to transition without phonons (p = 0). In the field of high temperatures when $`4S[f(f+1)]^{1/2}>p>1`$ the discrete lines extend the periodic structure in spectra disappears and the contour of a spectral band can be approached by function of Gauss:

$$G(\mathrm{}\omega )=exp\left\{\frac{1}{4S[f(f+1)]}(\frac{\omega \omega _{max}}{\omega _0})^2\right\}$$
(5)
where $`\omega `$\- optical frequency, $`\omega _{max}`$ \- frequency in a maximum of spectral distribution, $`\omega _0`$ \- optical frequency of electronic transition at = 0. In the region of low temperatures when f$``$0 and $`>>`$ Sf(f+1) contour of a spectral band follow the dependence

$$G(\mathrm{}\omega )=S^p/p!.$$
(6)
Approach to spectra on basis of expressions (5, 6) has allowed us to determine S = 5 for A - centre, types and energy of phonons connected with the centres, energy levels of A - centre corresponding to transitions with p = 0. In particular, data about TA phonons received from the analysis of experimental spectra connected with A- centre are given in Table 1 together with the appropriate literary data.

Table 1: Energy of TA phonons in silicon

| Direction | Energy of phonons (meV) determined by methods: | | | |
| --- | --- | --- | --- | --- |
| of phonon | calculating | dissipation | indirect | photocon- |
| wave |  | of nutrons | IR | ductivity |
| vector |  |  | absorbtion | on A-centre |
| 100 | 23.0 | 21.0 | 22.0 | 22.0 |
| 110 | 18.0 | 17.9 | 18.0 | 18.3 |
| 111 | 16.5 | 16.7 | 17.0 | 16.9 |

On an insertion of a fig. 2 are given the experimental data about energy splitting of connected with A- centre LO and TA phonons arising as a result of interaction A- centres among themselves depending on their concentration (N). The size S also changes from 5 up to 2 at increase N up to $`510^{17}cm^3`$. Electrons and holes carrying out transitions to levels EVC inevitably cooperate with p=S phonons. In result at energy levels of EVC, which are inherent oscillatory energy levels of these centres and are shown as deep energy levels, appears located electrons, holes and phonons. Hence EVC represents complex formation consisting from impurity atom, his inherent oscillations , electrons, holes and phonons. These particles in structure EVC form the interconnected auto localized system submitting other statistical and dynamic laws versus free phonons and electrons of conductivity. In this connection EVC can cause unusual physical properties to crystals and crystal structures which are poorly connected to a structure of energy bands of a crystal and properties of conductivity electrons. The similar conclusion was made earlier as a result of research of phonon drag in semiconductors where the phonon drag is caused only by those phonons which are strongly connected with electrons and consequently have other properties .

The modulation of spectra by phonons stops in samples on the basis of various semiconductors when the concentration of free charge carriers at room temperature (concentration of doping impurity) exceeds $`n_{max}`$ = $`210^{17}cm^3`$. It gives the basis to consider that concentration of electrons and holes which are auto located on EVC and capable to be superconducting does not exceed $`n_{max}`$.

A- centre arise at technological processings of silicon and silicon structures, in particular, in structures metal - oxide of silicon - silicon (MOS-structures). The presence of A- centres in structures is shown on characteristic negative photoconductivity in silicon under oxide, modulation of spectra by phonons and on kinetics of photo-emf which is described by not less than triad of time constant (t). These constants are mutually connected by proportions $`t_1:t_2:t_3=1!/S^1:2!/S^2:3!/S^3`$ at S = 2 also corresponds to probability of electron-vibrational transitions which are described by Eq. (6) at participation p = 1, 2 and 3 phonons. A - centres also influence on volt - capacitance characteristics of MOS-struktures. On the fig. 3 are submitted typical volt - capacitance (C-V) characteristics of aluminium contact by the area $`4.910^4cm^2`$ to a plate of silicon containing A- centres in the concentration $`510^{15}cm^3`$. The characteristics are measured at room temperatureT ($`T<T_c`$) on various frequencies. The submitted characteristics are depended from frequency. The dependence of the characteristics from frequency is defined by available A - centres in samples. On various frequencies the capacitance is nonmonotonic function of back bias that does not correspond to traditional theory of capacitance for ideal contact metal - semiconductor with Schottky barrier. Untraditional physical model of contact metal - semiconductor is necessary for the analysis of such C-V dependences. It is possible to approximate the experimental C-V curves submitted in a fig. 3 by known dependence of contact capacitance (C) from the enclosed voltage (V): $`C=[S(V)\epsilon \epsilon _0]/L`$, where $`\epsilon `$ \- relative dielectric permeability of the semiconductor and $`e_0`$ \- electrical constant, L - thickness of depletion region, accounting that the effective area of contact (S) depends on a voltage: S = S(V). Such dependences corresponds of contact model which is taking into account the presence of fine regions (embedments) with high onductivity in the semiconductor under a field electrode which are coherent areas. In process of penetration of an electrical field into the semiconductor (at increase of back-biasing voltage) the border of depletion region achieves some of these embedments and area of equipotential surface grows. Thus differential capacitance of contact is accordingly increased. On experience the smooth increase of capacitance is observed at achievement of some bias voltage that it is possible to explain by volumetric distribution of the embedments which serially achieves equipotential surface of depletion region border. The unmonotonous dependence C(V) with several extremums in such model can be explained by presence of several layers of embedments. Identical high-resistance and low-resistance layers, as it is well known, exists in such and similar structures strongly influences conductivity by elastic waves arising in depletion region of contact. Besides it is known that the periodicity of layers also depends on a voltage on contact and from voltage frequency. It brings contribution in frequency dependence of contact capacitance. The appropriate model of contact which allow to explain frequency dependence of capacitance contains coherence areas of the small size in the semiconductor under a field electrode. These areas are distributed disorderly and are grouped in layers parallel to a field electrode. It is possible to explain the experimental C-V curves just by a discrete structure of layers formated by fine coherence areas. Monolithic low-resistance layers are unsuitable because in this case the differential capacitance can not change in relation to capacitance of depletion region of the semiconductor. The presence of embedments with conductive (superconductive) pieces in the semiconductor under field contact quite corresponds to an opportunity of formation of coherence areas with the characteristic size $`\lambda `$. Experimentally observable frequency dependence of differential capacitance in semiconductor contacts confirms presence of coherence areas in samples with electron-vibrational centres.

## 3. Estimation of parameters

Superconductive property of a material are doubtlessly connected to occurrence of coherence areas which possess of superconductive properties due to coherence of electronic displacements. The law of occurrence of coherence areas is defined by concentration those EVC in which the inherent oscillations are exited and also by concentration of phonons. The interaction between EVC determines occurrence of coherence areas and is executed by means of an exchanging of the centres with each other by phonons. It is possible to assume that for an estimation of the minimal concentration ($`N_{min}`$) of EVC at which the formation of coherence areas is possible when such interaction is effective on distances between EVC about length of phonon wave ($`\mathrm{\Lambda }`$). The minimal concentration of exited EVC can be estimated as $`\mathrm{\Lambda }^3`$. Accepting the maximal speed of a sound in silicon $`V=9.1310^5`$ cm/c and phonon frequency $`F=1.2510^{10}c^1`$ we shall receive $`N_{min}=2.5610^{12}cm^3`$.

Normal-superconducting transition temperature ($`T_c`$) can be estimated proceeding from the following reasons. If to consider the intrinsic semiconductor material with effective mass for density of conditions for electrons ($`m_{nd}`$) and holes ($`m_{pd}`$) when at certain temperature ($`T`$) speed of thermal generation of electrons and holes (G) in individual volume and at time of life ($`\tau _i`$) according to the statistical theory define inherent concentration $`n_i`$ = $`\sqrt{N_cN_v}exp(\frac{E_g}{2kT})`$ = G$`\tau _i`$. $`N_c=2(\frac{2\pi m_{nd}kT}{h^2})^{3/2}`$ and $`N_v=2(\frac{2\pi m_{nd}kT}{h^2})^{3/2}`$ \- effective number of conditions in conduction energy band and in valence energy band, $`E_g`$ \- width of energy forbidden gape of the semiconductor. In a stationary condition for the same time $`\tau _i`$ carriers of charges recombinate with the same rate G. If recombination occurs on energy levels of EVC then each recombination act gives rise to EVC inherent oscillations with energy determined by Eq. (1) and else S phonons is rised. Let’s consider that it is enough for synchronization of electronic displacement in coherence areas of one phonon per one EVC. Therefore for formation coherence area is necessary not less $`n_=(N_{min}/S)f(E)`$ recombination acts in time $`\tau _i`$, where $`f(E)`$ \- the function Bose for given oscillation energy $`E(\mu )`$. It is possible to write down a condition for existence of the minimal concentration of exited EVC as $`n_i=n`$. By substituting in this equality the expressions for $`n_i`$ and $`n_k`$we shall receive a relation which is possible to consider as the equation for definition of temperature $`T=T_c`$:

$$\sqrt{N_cN_v}exp(\frac{E_g}{2kT})=\frac{N_{min}}{S(exp\frac{E(\mu )}{kT}1)},$$
(7)
where E($`\mu `$) - discrete oscillatory energy of EVC. It is necessary to tell more about possible meanings of E($`\mu `$). E($`\mu `$) can not exceed Eg/2 as in this case she will be transferred with a high probability to electrons and is spent on electronic transitions through the forbidden zone of the semiconductor. It is known EVC show quantum and classical properties : E($`\mu `$) can accept meanings conterminous with energies of charmonical quantum vibrator according to Eq. (1) and also meanings multiple $`E_\alpha `$. Therefore for $`\alpha `$-type inherent EVC oscillator E($`\mu `$) = $`(E_\alpha /2)\mu <Eg/2`$, $`\mu `$ = 1,2,3,…

Using known tabulared meanings of parameters and also S = 5, $`\upsilon `$=0 and $`E_\alpha `$ = 0.22 for A- centre in silicon by numerical way is received from (7) the meaning of the $`T_c`$=305K at $`\mu `$=1, $`T_c`$=235K at $`\mu `$=2 and $`T_c`$=162K at $`\mu `$=3 for silicon. The similar estimation for Ge with the oxygen centres gives meaning of the $`T_c`$=182K, $`T_c`$=130K and $`T_c`$=33K. According to this results the superconductivity in silicon with $`\mu =2`$ , $`E(\mu )=E_\alpha `$, for A- centres necessary to expect at temperatures above 235K and in germanium - at temperatures is higher 130K.

The estimation of critical density of current ($`J_k`$) can be executed proceeding from the data about possible concentration of superconducting charges (n) and about maximal their drift speed (v). The meaning of n can be in limits from n = $`n_k`$ up to $`n_{max}`$ = 2$`10^{17}cm^3`$ and the speed of drift is probably limited by dissipation on borders of coherence areas and can not exceed speed of a sound V. Believing $`J_k`$ = enV we come to the following estimation of critical density of a current in silicon at room temperature: $`0,55/cm^2<J_k<73A/cm^2`$.

For an estimation of critical magnetic intensity it is possible to involve the following experimental data received at constant density of a current in silicon samples in a magnetic field. Such data are given on fig. 4 and represent typical dependence of derivative of voltage V (V - on sample) with respect to magnetic induction (B), that is dV/dB from B when current density $`J`$ = const, measured in a normal condition of Si sample (at $`T<T_c`$) containing EVC with concentration $`510^{15}cm^{}3`$. The dependence submitted on fig. 4 contains periodic maxima and can be explained by influence of a magnetic field on charged oscillators as electron connected with EVC by means of crystal phonon. The movement equation of such oscillator can be written down as follows:

$$\frac{d^2X}{dt^2}+(\frac{e}{m^{}})\frac{dX}{dt}B\omega ^2X=0,$$
(8)
where X - generalized coordinate , e - charge and m\* - effective mass of electron, $`\omega `$ \- cyclic frequency of fluctuations, B - magnetic induction. Component containing $`\frac{dX}{dt}`$ takes into account action of Lorentz's force when $`\frac{dX}{dt}`$ and B is mutually orthogonal. The given equation (8) supposes oscillating solution only under condition: $`\left\{4\omega ^2[\frac{eB}{m^{}}]^2\right\}>0`$.

The oscillatory movements of oscillator are possible when $`B<\frac{2m^{}\omega }{e}`$ that is when B is not too great. Otherwise oscillations are suppressed by a magnetic field and are impossible.

Maxima of dependences submitted on fig. 4 are possible to identify with frequencies those phonons which provide a coherence condition. If to accept for silicon $`m^{}=0.98m_0`$, where $`m_0`$ \- mass at rest of electron, then the appropriate frequencies multiple $`2.110^{10}`$ $`c^1`$, lay in limits from $`2.110^{10}c^1`$ up to $`1.2610^{11}c^1`$ and correspond to acoustic fluctuations of a crystal. It is seen from these data that the frequency $`F=1.2510^{10}c^1`$ accepted for an estimation of the minimal concentration of A- centres ($`N_{min}`$) is less but close to $`2.110^{10}`$ $`c^1`$. Oscillations with the large frequencies are absent when B $`>`$ 1.3 tesla hence coherence area can not arise also superconductivity is impossible. Therefore it is possible to expect that in magnetic fields with B $`<`$ 1.3 tesla the superconductivity caused EVC is possible but at B $`>`$ 1.3 tesla she may be impossible.

## 4. Experimental results and discussion

The experimental temperature dependences of resistance for two Si samples are submitted on fig. 5. Within the separate temperature areas the resistance is described by some activation energies which equal to energies of phonons cooperating with inherent oscillations of oxygen atoms. One can see on fig. 5 when the temperature is raised up to $`T=T_c`$ the resistivity sharply decreases up to zero (superconductivity arises at $`T=T_c`$). The superconductivity exist up to rather high temperatures (probably up to temperature of a crystal melting and is higher). One can see on fig. 5 else that curve 1 contains two steps of resistance sharp reduction (at $`T`$ = 250K and at $`T`$ = $`T_c`$ = 309K) but curve 2 contains one such step (at $`T=T_c=389.6K`$). The similar characteristics of some samples can contain 3 or 4 such steps. The presence of such steps resistance reduction at approach of temperature to $`T_c`$ specifies discrete (quantum) character of superconductivity arising. The occurrence of such steps can be connected with processes of arising, reorganization and cooperation of coherence areas with each other. In some samples alongside with the specified steps of resistance reduction the steps of sharp resistance increase are observed also and in such case superconductivity does not arise that it is possible to explain by deformation or destruction of coherency areas. In any case the sharp changing of samples resistance at discrete temperatures can definitely be connected with changing of a role of various quantums of EVC inherent oscillations because at absence of EVC the sharp jumps of resistance and superconductivity is not observed.

Becouse the given superconductivity arises due to oscillations of a crystal with very high frequencies appropriate to hypersound it is expedient to name the given superconductivity, caused by the electron-vibration centres, as hyperconductivity to distinguish her mechanism from other mechanisms of superconductivity.

In silicon samples we observed hyperconductivity in magnetic fields with B up to 0.5 tesla that does not contradict an estimation of allowable intensity of a magnetic field. Hyperconductivity existed at density of a current up to 10 $`A/cm^2`$ that not contradicts estimations of critical density for a current density.

The occurrence hyperconductivity is connected to occurrence of thermopower (TEP) features. On fig.6 are given temperature dependences of TEP for the sample designated by 2 on fig. 5. Such alternating-sign of temperature dependence TEP is characteristic for normal-hyperconducting transition. It seems the behaviour TEP reflects complex dynamic processes of formation and interaction of coherence areas among themselves.

Occurrence of superconductivity is accompanied by huge increase of thermal conductivity. In accordance with experimental data the meaning of thermal conductivity in some samples increase more than $`10^5`$ times. Probably the hyperconductivity is accompanied by heat superconductivity.

Hyperconductivity arises in various crystals containing EVC. On fig. 7 the available experimental data about meanings of the $`T_c`$ in various hyperconductor samples are submitted. One can see on fig. 7 that normal-hyperconducting transition temperature $`T_c`$ shows the tendency to reduction at increasing of average size of the basic substance nuclear number ($`Z_{mid}`$). Straight linees a and b on fig. 7 restrict the area in which the experimental points are placed. One can see on fig. 7 that the experimental meanings $`T_c`$ for every material can change over a wide range between linees a and b. On the other hand situation of straight linees a and b differs on insignificant size of energy $`kT17`$ meV appropriate to acoustic phonons. It speaks about importance not only inherent oscillations of EVC but acoustic phonons simultaneously for formation of hyperconductivity in different materials. The minimal experimental meanings of $`T_c`$ for Si and Ge are in agreement with given estimation of $`T_c`$ when $`\mu `$=2 for $`\alpha `$-inherent oxygen oscillator. According to Eq. (7) the increase S corresponds to reduction $`T_c`$ and promotes hyperconductivity existence in wide area of temperatures. The meanings $`S1`$ are necessary for existence hyperconductivity from near to room temperatures up to higher temperatures that it is possible to provide by introducing EVC in crystals. The experimental data about meanings $`T_c`$ for semiconductors with small $`E_g`$ can be coordinated with Eq. (7) only by taking into account $`\beta `$-type or $`\gamma `$-type of inherent oscillations because solutions of Eq. (7) with participation of $`\alpha `$ \- inherent oscillations are absent.

## 5. Conclusion

The superconductivity caused by electron-vibrational centres - hyperconductivity can exist in the field of room temperatures and at higher temperatures in various materials in wide electrical current density and magnetic intensity intervals. That allows ones to hope on opportunity of hyperconductivity application in science and engineering.

## Figure captions

Fig. 1.    Experimental spectrum IR reflection of polarized light from a surface of quartz (1). The calculated spectrum of reflection by "zero" inherent fluctuations of oxygen (2).
Fig. 2.    Spectrum of photoconductivity (1) and spectrum of IR transmittance (2) aused by photoionization of A - centres in silicon at T = 80K. The arrows designate the appropriate each other minima of spectra and the number participating phonons is specified by figures. On an insertion the experimental data about splitting LO and TA phonons are given depending on concentration of A - centres.
Fig. 3.    haracteristics volt - capacitance of contact Si - Al containing A - centres are measured at room temperature $`T<T_c`$ on various frequencies: 0.2 MHz (1); 0.5 MHz (2); 1.0 MHz (3); 5.0 MHz (4); 10.0 MHz (5); 20.0 MHz (6).
Fig. 4.    Derivative of voltage on Si sample with respect to magnetic intensity (B) at room temperature $`T<T_c`$.
Fig. 5.    Temperature dependences of resistance for two of Si samples containing various concentration of A - centres: $`N_1510^{14}cm^3`$ and $`N_2610^{15}cm^3`$.
Fig. 6.    Temperature dependence of thermopower for the same Si sample whose characteristic is designated on fig. 5 by number 2.
Fig. 7.    The experimental meanings of normal-hyprconducting transition temperatures ($`T_c`$) according to average meanings of nuclear number ($`Z_{mid}`$) in various samples containing electron-vibrational centres. Straight linees a and b limit area in which the experimental points lay.