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s3://data.kl3m.ai/documents/recap_docs/2017/01/19/j._blystone_v._penndot_bureau_of_driver_licensing.pdf.json	text/markdown	IN THE COMMONWEALTH COURT OF PENNSYLVANIA James Blystone : : v. : No. 7 4 5 C .D. 2016 : Submitted: September 30 , 2016 Commonwealth of Pennsylvania, : Department of Transportation , : Bureau of Driver Licensing, : Appellant : BEFORE: HONORABLE RENÉE COHN JUBELIRER, Judge HONORABLE ANNE E. COVEY , Judge HONORABLE JOSEPH M . COSGROVE , Judge OPINION NOT REPORTED MEMORANDUM OPINION BY JUDGE COHN JUBELIRER FILED: January 19, 2017 The Commonwealth of Pennsylvania, Department of Transportation, Bureau of Driver Licensing ( Department ) appeals from the Order of the Court of Common Pleas of Allegheny County (common pleas) that dismissed the appeal of James Blystone (Licensee) 1 from the suspension of his operating privileges under Sec tion 1532( c ) (1)(iii) of the Vehicle Code 2 but reduced Licensee’s suspension from two 1 By Order dated September 23, 2016, this Court precluded Licensee fr om participating in this appeal due to his failure to file a brief. 2 75 Pa. C.S. § 1532(c)(1)(iii). Section 1532(c)(1)(iii) provides, in relevant part, that: The department shall suspend the operating privilege of any person upon receiving a certified record of the person’s conviction of any offense involving the (Continued...)2 year s to one year. On appeal, the Department argues that common pleas erred in reducing Licensee’s suspension base d on the remoteness of two of his prior convictions because Section 1532 (c)(1) of the Vehicle Code does not limit the look - back peri od for prior convictions under T h e Controlled Substance , Drug, Device and Cosmetic Act 3 (Drug Act). For the following reasons , we reverse. The facts are un disputed. On Janua ry 6, 2016, Licensee was convicted of violating Section 13(a)(16) of the Drug Act, 35 P.S. § 780 - 113(a)(16) (related to knowingly or intentionally possessing a controlled or counterfeit substance by one not authorized under the Drug Act) , on September 7, 2 014 . Licensee previously was convicted of violating Section 13(a)(16) of the Drug Act on : January 22, 1999 for a violation on August 15, 1998; July 3, 2001 for a violation on May 25, 2000; and October 9, 2013 for a violation on December 5 , 2012 . 4 This b eing Licensee’s fourth conviction for violating the Drug Act, the Department notified him by letter mailed January 22, 2016 that it was suspending his operating privilege for two possess ion, sale, delivery, offering for sale, holding for sale or giving away of any controlled substance under the laws of the United States, this Commonwealth or any other state, . . . (1) The period of suspension shall be as follows: . . . . (iii) For a thi rd and any subsequent offense thereafter, a period of two years from the date of the suspension. Id. 3 Act of April 14, 1972, P.L. 233, as amended , 35 P.S. §§ 780 - 101 — 780 - 144 . 4 These prior convictions resulted in the suspension of Licensee’s operating pr ivilege under Section 1532(c)(1) of the Vehicle Code for periods of : six months for the first offense ; six months for the second offense (which should have been a one - year suspension) ; and two years for the third offense . Licensee appealed the two - year suspension, his appeal was dismissed by common pleas, and the two - year suspension was reinstated.3 years, effective April 1, 2018, pursuant to Section 1532(c) of the Vehicle Co de. Licensee appealed the suspension to common pleas. At the de novo hearing b efore common pleas, the Department submitted certified documents reflecting Licensee’s multiple convictions under the Drug Act and multiple suspensions of his operating privilege under the Vehicle Code, which were admitted into evidence . Licensee testified that he had not been in trouble since 2014 , his license had been suspended since 2014, and he had not been driving while his license was suspended. (R.R. at 14a.) Li censee stated that he was doing what he was supposed to be doing and was ready to get his license back. Common pleas held that two of Licensee’s prior convictions were from 15 years ago , Licensee’s cases were “very old, ” and it was “going to make it a one - year suspension,” “[w]hether the statute makes a differentiation or not . ” (R.R. at 17a .) Therefore, c ommon pleas dismissed Licensee’s appeal but reduced the suspension from two years to one year. The Department appealed and, at common pleas ’ direction , filed a Concise Statement of Errors Complained of on Appeal pursuant to Rule 1925(b) of the Pennsylvania Rules of Appellate Procedure (Statement) . 5 In the Statement, the 5 Pa. R.A.P. 1925 (b) . Rule 1925 provides, in pertinent part, as follows: (a) Opinion in support of order. (1) General rule. -- Except as otherwise prescribed by this rule, upon receipt of the notice of appeal, the judge who entered the order giving rise to the notice of appeal, if the reasons for the order do not already appear of record, shall forthwith file of record at least a brief opinion of the reasons f or the order, or for the rulings or other errors complained of, or shall specify in writing the place in the record where such reasons may be found. * * * (b) Direction to file statement of errors complained of on appeal; instructions to the appellant and the trial court. -- If the judge entering the order giving rise (Continued...)4 Department argued that common pleas erred by reducing Licensee’s suspension to one year because , unlike Section 3806(b) of the Vehicle Code, 6 Section 1532(c) does not include a time restriction on what constitutes a prior conviction for violating the Drug Act. (R.R. at 65a.) Common pleas issued an opinion in support of its Order , pursuant to Rule 1925(a) , that acknowledged that Section 1532(c) “does not contain a time restriction for the look - back period.” (Op. at 2.) However, common pleas noted that the look - back period for convictions for driving under the influence of alcohol or a controlled substance (DUI) is limited to 10 years, and held that two of Licensee’s Drug Act convictions occurred more than 14 years ago and “the public safety purpose of the statute is not implicated when convictions that occurred over a decade ago a re factored into the penalty to increase the license suspension.” ( Id. ) On appeal, 7 the Department makes the following argument s. C ommon pleas erred by reducing Licensee’s suspension from two years to one year based on to the notice of appeal (“judge”) desires clarification of the errors complained of on appeal, the judge may enter an order directing the appellant to file of record in the trial court and serve on the judge a concise statement of the errors complained of on appeal (“Statement”). Pa. R.A.P. 1925(a), (b). 6 75 Pa. C.S. § 3806(b) . This section defined “prior offense s ” for the purposes of imposing penalties under the Vehicle Code for driving under the influence of alcohol or a controlled substance, including a suspension of operating privileges under Section 3804(e), 75 Pa. C.S. § 3804(e), as “includ[ing] any conviction . . . within the [10] years before the sentencing on the present violation.” 7 5 Pa. C.S. § 3806 (b) . Section 3806 (b) was amended by the Act of May 25, 2016, P.L. 236, effective immediately , and continues to conta in the 10 - year look - back period, stating that “the prior offense must have occurred[] within 10 years prior to the date of the offense for which the defendant is being sentenced . . . .” 75 Pa. C.S. § 3806(b)(i). 7 Our review of common pleas’ “ decision in a license suspension case is limited to determining whether [common pleas’] findings of facts are supported by competen t evidence and whether [common pleas] committed an error of law or an abuse of discretion in reaching its (Continued...)5 a conclusion that two of License e’s D rug Act convictions were too old . H ad the General Assembly intended to exclude older Drug Act convictions from the enhancement provisions of Section 1532(c)(1)(i) - (iii), it could have done so and it is not for common pleas, or this Court, to add language to the statute. Mohamed v. Dep’t of Transp., Bureau of Motor Vehicles , 40 A.3d 1186, 1194 - 95 (Pa. 2012). Therefore, because the General Assembly did not include a 10 - year look - back period in the plain language of Section 1532(c)(1) , common pleas erred in a dding one . Section 1532(c)(1)(iii) provides that “ [t]he department shall suspend the operating privilege of any person upon receiving a certified record of the person’s conviction of any offense involving the possession, sale, delivery, offering for sale, holding for sale or giving away of any controlled substance under , ” inter alia , the Drug Act , and that “[t]he period of suspension shall be . . . [f]or a third and any subsequent offense thereafter, a period of two years from the date o f the suspension.” 75 Pa. C.S. § 1532(c)(1)(iii) (emphasis added) . The Department bears the burden of proving the existence of the drug convictions , and it may meet this burden “by submitting into evidence its certified record of conviction.” Carter v. Dep’t of Transp., Bureau of Driver Licensing , 838 A.2d 869, 872 (Pa. Cmwlth. 2003). “[O]nce [ the Department ] has introduced, via a certified record, evidence of a conviction, [it] has met its burden of production and established a rebuttable presumption t hat a conviction exists. Absent clear and convincing evidence [ 8 ] that decision.” Orloff v. Dep ’t of Transp . , Bureau of Driver Licensing , 912 A.2d 918, 922 n.7 (Pa. Cmwlth. 2006) (citation omitted). 8 “ ‘ Clear and convincing evidence ’ has been defined as ‘ evidence that is so clear and direct as to permit the trier of fact to reach a clear conviction, without hesitancy, as to the truth of the facts at issue. ’ ” Mateskovich v. Dep’t of Transp., Bureau of Driver Licens ing , 755 A.2d 1 00, (Continued...)6 the record is erroneous, this presumption becomes conclusive on the issue of the conviction.” Dep’t of Transp., Bureau of Driver Licensing v. Diamond , 616 A.2d 1105, 1107 - 08 (Pa. Cmwlt h. 1992). “To rebut a prima facie case established by a certified conviction record, the licensee must either challenge the regularity of the record, or introduce direct evidence showing that the record is incorrect and that the conviction was never enter ed.” Dick v. Dep’t of Transp., Bureau of Driver Licensing , 3 A.3d 703, 707 (Pa. Cmwlth. 2010). Here, the Department presented certified documents showing that Licensee had been convicted four times for violating the Drug Act , thereby creating the rebutt able presumption that those convictions exist . Diamond , 616 A.2d at 1107 - 08. Licensee did not present evidence challenging the regularity of those records, showing that the records were incorrect, or establishing that he was not convicted as described in the records. Accordingly, there was no clear and convincing evidence that those records were erroneous and, therefore, they became conclusive as to Licensee’s convictions. Dick , 3 A.3d at 707 ; Diamond , 616 A.2d at 1107 - 08 . Therefore, by its express terms, Section 1532(c)(1)(iii) required that the Department suspend Licensee’s operating privilege for a period of two years. Notwithstanding the language of Section 1532(c)(1)(iii) , common pleas reduced Licensee’s su spension to one year. However, “ w here the language of a statute is plain and unambiguous, . . . courts may not set aside that language in order to pursue their own interpretation of what the legislature actually intended.” Dick , 3 A.3d at 708. It is wel l - settled that courts “have no authority to add or insert language into a statute” and should not, through interpretation, add a 102 n.6 (Pa. Cmwlth. 2000) (quoting Sharon Steel Corp . v. Workmen’ s Comp . Appeal Bd . (Myers) , 670 A.2d 1194, 1199 (Pa. Cmwlth. 1996 ) ).7 requirement that the General Assembly did not include . Summit School, Inc. v. Department of Education , 108 A .3d 192, 199 (Pa. Cmwlth. 2015). “ [W] here the legislature includes specific language in one section of a statute and excludes it from another, it should not be implied where excluded . ” Pennsylvania State Police, Bureau of Liquor Control Enforcement v. Prekop , 627 A.2d 223, 226 (Pa. Cmwlth. 1993). In reducing Licensee’s suspension based on the timing of two of his convictions, common pleas added a limitation to Section 1532(c)(1) that is not includ ed in its plain language . If the General Assembly had intended to limit the look - back period for Drug Act convictions , it could have done so as it had for DUI convictions . However, the General Assembly did not create such a limitation and therefore, one should not have been implied or added by common pleas . Summit School, Inc. , 108 A.3d at 199; Prekop , 627 A.2d at 226. Moreover, common pleas ’ reliance on the “public safety purpose” of the Vehicle Code to incorporate a 10 - year limit on the look - back period wa s not warranted because enhanced suspension provisions have been found to serve many purposes. See, e.g. , Plowman v. Dep ’ t of Transp . , Bureau of Driver Licensing , 635 A.2d 124, 126 - 27 (Pa. 1993) (holding that the purposes of suspending a licensee’s operating privilege for violat ing the Drug Act is to “protect[] against [] the proliferation of drug use” and to deter drug use); 9 Dick , 3 A.3d at 708 (reviewing the enhanced suspension provisions for multiple prior offenses for DUI under Section 3806(b) and stating that 9 Plowman examined former Section 13(m) of the Drug Act , formerly 35 P.S. § 780 - 113(m), which like Sec tion 1532(c)(1) required the suspension of a licensee’s operating privilege based on a conviction for violating the Drug Act and included almost identical enhanced suspensions, including up to a two - year suspension for a third and subsequent conviction. Former Section 13(m) was repealed by Section 7 of the Act of June 28, 1993, P.L. 137, Section 1532(c) was added to the Vehicle Code by Section 3 of the same act, and both were effective in 60 days.8 “enhancements are justified on the grounds that a defendant, who has once had the benefit of the penal system, yet chooses to ignore that benefit and reoffend, merits harsher punishment than a first offender”); Lesko v. Dep’t of Transp., Bureau of Driver Licensing , 657 A.2d 1007, 1010 (Pa. Cmwlth. 1995) (“The courts of this Commonwealth have consistently adhered to the principle that our legislature enacted [legislation to require the suspension of an individual’s operating privilege for a Drug Act conviction] to send a strong message that neither possession, nor use of illegal drugs, will be tolerated.”) Accordingly, common pleas err ed in reducing the period of Licensee’s suspension from two years to one year in contravention of the plain language of Section 1532(c)(1)(i ii) . We therefore will reverse common pleas’ Order reduc ing the suspension of Licensee’s operating privilege from two years to one year , and reinstate Licensee’s two - year suspension. ________________________________ R ENÉE COHN JUBELIRER, JudgeIN THE COMMONWEALTH COURT OF PENNSYLVANIA James Blystone : : v. : No. 745 C.D. 2016 : Commonwealth of Pennsylvania, : Department of Transportation, : Bureau of Driver Licensing, : Appellant : O R D E R NOW , January 19, 2017 , the Order of the Court of Common Pleas of Allegheny County, entered in the above - captioned matter, is hereby REVERSED to the extent that it reduced the suspension of James Blystone’s (Licensee) operating privilege from two years to one year , and the two - year suspension of Licensee’s operating privilege is reinstated . ________________________________ RENÉE COHN JUBELIRER, Judge
89252346-c62e-4aa6-931c-f24d0dd92bad	text/plain	### Question How does SEEDS define germination? ### Answer Under 7 U.S.C. § 1561, germination is defined as: > the percentage of seeds capable of producing normal seedlings under ordinarily favorable conditions (not including seeds which produce weak, malformed, or obviously abnormal sprouts), determined by methods prescribed under section 1593 of this title #### Citation: - 7 U.S.C. § 1561 - Heading: CHAPTER 37-SEEDS > SUBCHAPTER I-DEFINITIONS
s3://data.kl3m.ai/documents/dotgov/www.pacom.mil/Media/News/News-Article-View/Article/3253958/us-provides-transitional-shelters-to-families-displaced-by-tropical-storm-agato/index.html.json	text/markdown	An official website of the United States government Here's how you know Official websites use .mil A .mil website belongs to an official U.S. Department of Defense organization in the United States. Secure .mil websites use HTTPS A lock (lock ) or https:// means you’ve safely connected to the .mil website. Share sensitive information only on official, secure websites. Skip to main content (Press Enter). U.S. Indo-Pacific CommandUSINDOPACOM U.S. Indo-Pacific Command Search Search Search - Home - Leadership - Commander - Deputy Commander - Chief of Staff - Senior Enlisted Leader - About USINDOPACOM - History - USPACOM Area of Responsibility - USPACOM Previous Commanders - Women, Peace and Security - Organization - Organization Chart - Media - News - Spotlight - Photos - Speeches / Testimony - Freedom of Information Act - FOIA - Reading Room - Submit FOIA Request - Request Status - FOIA FAQS - Resources - Travel Requirements - Useful Theater Information - FAQ - Useful Links - Newcomers - Contact - Directory - Media Inquiries - Industry Engagements - JTF - Red Hill Home : Media : News : News Article View PHOTO INFORMATION Download Details Share # U.S. Provides Transitional Shelters to Families Displaced by Tropical Storm Agaton in Leyte U.S. Embassy in the Philippines U.S. Embassy Manila -- On December 19, the United States government, through the United States Agency for International Development (USAID) , handed over 167 transitional shelters to benefit over 900 persons displaced by Tropical Storm Agaton in the municipality of Abuyog and the city of Baybay in Leyte. USAID Mission Director Ryan Washburn and International Organization for Migration (IOM) Chief of Mission Tristan Burnett led the handover ceremony in Baybay City in the presence of Abuyog Vice Mayor Lemuel Gin K. Traya and Baybay City Councilor Romulo Alcala. Abuyog and Baybay were among the areas most heavily affected by Tropical Storm Agaton in April, resulting in more than 187 casualties and the loss of homes and livelihoods of over 16,700 families. “Recognizing the close family ties and the strong bonds within communities, my wish this holiday season is that these shelters will bring your family and communities together again in a safer environment,” said USAID Mission Director Washburn. “The United States is proud to stand with you and your communities to rebuild and recover from the devastating loss caused by this storm.” As part of the U.S. government’s continuing commitment to support the Philippine government’s relief and recovery efforts in areas affected by Tropical Storm Agaton, USAID partnered with IOM to assist more than 12,000 people by improving access to safer living spaces, working with the local authorities to identify relocation sites, providing flexible shelter packages, and train households on building better techniques. The U.S. government also supported the repair of water systems and sanitation facilities and the distribution of hygiene supplies and water treatment devices to the most vulnerable households. To date, USAID’s typhoon assistance to the Philippines amounts to more than Php 1.6 billion ($29 million), making the U.S. government the largest humanitarian donor in the country. Through this funding from the American people, USAID has provided critical shelter assistance, increased access to safe drinking water and sanitation facilities, restored agricultural livelihoods, ensured essential sexual and reproductive health services, and provided protection programs for women and children. In addition, USAID works year-round to help communities in the Philippines prepare for and increase resilience to recover from natural disasters. SHARE ** PRINT More
s3://data.kl3m.ai/documents/uspto/07491244.json	text/markdown	# Patent ## Title Oxidizing hair coloring agents containing m-aminophenol derivatives ## Abstract The object of the present patent application are agents for the oxidative coloring of keratin fibers, particularly hair, based on a developer substance-coupler substance combination, characterized in that they contain at least one meta-aminophenol derivative of general formula (I) wherein R1 denotes hydrogen, a C1-C6 alkyl group, a C2-C4 hydroxyalkyl group, a C2-C4 dihydroxyalkyl group, a C1-C4 alkoxy group or a halogen atom; and R2 denotes hydrogen, a hydroxy group, a carboxylic group, an aminocarbonyl group or a hydroxymethyl group. ## Background FIELD OF THE INVENTION The present invention relates to agents for oxidative coloring of keratin fibers, particularly human hair, based on a developer substance/coupler substance combination which contains a meta-aminophenol where the amino group is part of a 5 membered heterocyclic ring. BACKGROUND OF THE INVENTION In the field of dyeing keratin fibers, in particular hair coloring, oxidation dyes have achieved significant importance. The coloration arises here as a result of the reaction of certain developer substances with certain coupler substances in the presence of a suitable oxidizing agent. The developer substances used here are, in particular, 2,5-diaminotoluene, 2,5-diaminophenylethyl alcohol, p-aminophenol and 1,4-diaminobenzene, while examples of coupler substances are resorcinol, 4-chlororesorcinol, 1-naphthol, 3-aminophenol and derivatives of m-phenylenediamine. Besides dyeing to the desired intensity, numerous additional requirements are placed on oxidation dyes which are used for coloring human hair. For example, the dyes must be acceptable from a toxicological and dermatological point of view and the hair colorations achieved must have good light fastness, permanent wave fastness, acid fastness, and rubbing fastness. However, in any case, such colorations must remain stable over a period of at least 4 to 6 weeks without being affected by light, rubbing, and chemical agents. Furthermore, it is required that, by combining suitable developer substances and coupler substances, a broad palette of different color nuances can be produced. For providing a natural coloration of the hair 1,3-dihydroxybenzene has been used in combination with p-phenylendiamine derivatives. German Patent No. DE-A 32 33 541 suggests the use of substituted 1,3-dihydroxybenzene as couplers, nevertheless it is not possible to satisfy the above mentioned requirements in all aspects. Therefore there is a need for new couplers which provide natural colors for use in oxidative hair dyeing composition. SUMMARY OF THE INVENTION In this regard, we have now found that meta-aminophenol derivatives of general formula (I) meet the requirements placed on coupler components to an unusually high degree. Thus, by use of such coupler components together with known developer components, natural color shades are obtained which are unusually resistant to light and washing. DETAILED DESCRIPTION OF THE INVENTION The present invention therefore relates to agents for the oxidative coloring of keratin fibers, for example wool, furs, feathers, or hair, particularly human hair, based on a developer substance/coupler substance combination containing as a coupler a meta-aminophenol derivative of the general formula (I) or its physiologically compatible, water-soluble salt, wherein R1 denotes hydrogen, a C1-C6 alkyl group, C2-C4 hydroxyalkyl group, a C3-C4 dihydroxyalkyl group, a C1-C4 alkoxy group, or a halogen atom; and R2 denotes hydrogen, a hydroxy group, a carboxylic group, an aminocarbonyl group, or a hydroxymethyl group. Suitable compounds of formula (I) are, for example: 3-(1-pyrrolidinyl)phenol, 2-chloro-3-(1-pyrrolidinyl)phenol, 2-fluoro-3-(1-pyrrolidinyl)phenol, 2-methoxy-3-(1-pyrrolidinyl)phenol, 4-chloro-3-(1-pyrrolidinyl)phenol, 4-fluoro-3-(1-pyrrolidinyl)phenol, 4-methoxy-3-(1-pyrrolidinyl)phenol, 5-chloro-3-(1-pyrrolidinyl)phenol, 5-fluoro-3-(1-pyrrolidinyl)phenol, 5-methoxy-3-(1-pyrrolidinyl)phenol, 6-chloro-3-(1-pyrrolidinyl)phenol, 6-fluoro-3-(1-pyrrolidinyl)phenol, 6-methoxy-3-(1-pyrrolidinyl)phenol, 2-chloro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-chloro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-chloro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 2-chloro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 2-chloro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 2-chloro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 2-chloro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 2-chloro-3-(3-hydroxy-1-pyrrolidinyl)phenol, 2-chloro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 2-chloro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 2-fluoro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-fluoro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-fluoro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 2-fluoro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 2-fluoro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 2-fluoro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 2-fluoro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 2-fluoro-3-(3-hydroxy-1-pyrrolidinyl)phenol, 2-fluoro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 2-fluoro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 2-methoxy-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-methoxy-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-methoxy-3-(2-hydroxy-1-pyrrolidinyl)-phenol, 2-methoxy-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 2-methoxy-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 2-methoxy-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 2-methoxy-3-(3-carboxamide-1-pyrrolidinyl)phenol, 2-methoxy-3-(3-hydroxy-1-pyrrolidinyl)phenol, 2-methoxy-3-(3-hydroxy-methyl-1-pyrrolidinyl)phenol, 2-methoxy-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 4-chloro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 4-chloro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 4-chloro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 4-chloro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 4-chloro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 4-chloro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 4-chloro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 4-chloro-3-(3-hydroxy-1-pyrrolidinyl)phenol, 4-chloro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 4-chloro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 4-fluoro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 4-fluoro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 4-fluoro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 4-fluoro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 4-fluoro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 4-fluoro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 4-fluoro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 4-fluoro-3-(3-hydroxy-1-pyrrolidinyl)phenol, 4-fluoro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 4-fluoro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 4-methoxy-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 4-methoxy-3-(2-carboxamide-1-pyrrolidinyl)phenol, 4-methoxy-3-(2-hydroxy-1-pyrrolidinyl)-phenol, 4-methoxy-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 4-methoxy-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 4-methoxy-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 4-methoxy-3-(3-carboxamide-1-pyrrolidinyl)phenol, 4-methoxy-3-(3-hydroxy-1-pyrrolidinyl)phenol, 4-methoxy-3-(3-hydroxy-methyl-1-pyrrolidinyl)phenol, 4-methoxy-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 5-chloro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-chloro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 5-chloro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-chloro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 5-chloro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 5-chloro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-chloro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-chloro-3-(3-hydroxy-1-pyrrolidinyl)phenol, 5-chloro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 5-chloro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 5-fluoro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-fluoro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 5-fluoro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-fluoro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 5-fluoro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 5-fluoro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-fluoro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-fluoro-3-(3-hydroxy-1-pyrrolidinyl)phenol, 5-fluoro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 5-fluoro-3-(3-methoxymethyl-1-pyrrol idinyl)phenol, 5-methoxy-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-methoxy-3-(2-carboxamide-1-pyrrolidinyl)phenol, 5-methoxy-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-methoxy-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 5-methoxy-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 5-methoxy-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-methoxy-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-methoxy-3-(3-hydroxy-1-pyrrolidinyl)phenol, 5-methoxy-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 5-methoxy-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 6-chloro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-chloro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-chloro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-chloro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 6-chloro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 6-chloro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 6-chloro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-chloro-3-(3-hydroxy-1-pyrrolidinyl)-phenol, 6-chloro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 6-chloro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 6-fluoro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-fluoro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-fluoro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-fluoro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 6-fluoro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 6-fluoro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 6-fluoro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-fluoro-3-(3-hydroxy-1-pyrrolidinyl)-phenol, 6-fluoro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 6-fluoro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 6-methoxy-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-methoxy-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-methoxy-3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-methoxy-3-(2-hydroxy-methyl-1-pyrrolidinyl)phenol, 6-methoxy-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 6-methoxy-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 6-methoxy-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-methoxy-3-(3-hydroxy-1-pyrrolidinyl)phenol, 6-methoxy-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 6-methoxy-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 2-2-hydroxyethyl-3-(1-pyrrolidinyl)phenol, 2-ethyl-3-(1-pyrrolidinyl)phenol, 2-methyl-3-(1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(1-pyrrolidinyl)phenol, 5-2-hydroxyethyl-3-(1-pyrrolidinyl)phenol, 5-ethyl-3-(1-pyrrolidinyl)phenol, 5-methyl-3-(1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(1-pyrrolidinyl)phenol, 6-2-hydroxyethyl-3-(1-pyrrolidinyl)phenol, 6-ethyl-3-(1-pyrrolidinyl)phenol, 6-methyl-3-(1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-(2-hydroxy-ethyl)-3-(2-hydroxy -1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(2-hydroxy-methyl-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)-phenol, 2-(2-hydroxyethyl)-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(3-carboxamide-1-pyrrolidinyl)phenol, 2-(2-hydroxy-ethyl)-3-(3-hydroxy -1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(3-hydroxy-methyl-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 2-ethyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 2-ethyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-ethyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-ethyl-3-(2-hydroxy-1-pyrrolidinyl)-phenol, 2-ethyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 2-ethyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 2-ethyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 2-ethyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 2-ethyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 2-ethyl-3-(3-hydroxy-1-pyrrolidinyl)phenol, 2-ethyl-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 2-ethyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 2-methyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 2-methyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-methyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-methyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 2-methyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 2-methyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 2-methyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 2-methyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 2-methyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 2-methyl-3-(3-hydroxy-1-pyrrolidinyl)phenol, 2-methyl-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 2-methyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)-phenol, 2-trifluormethyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(2-methoxymethyl-1-pyrrolidinyl)-phenol, 2-trifluormethyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(3-carboxamide -1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(3-hydroxy-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(3-hydroxymethyl-1-pyrrolidinyl)-phenol, 2-trifluormethyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-(2-hydroxy-ethyl)-3-(2-carboxamide-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(2-methoxymethyl-1-pyrrolidinyl)-phenol, 5-(2-hydroxyethyl)-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-(2-hydroxy-ethyl)-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(3-hydroxy-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(3-methoxymethyl-1-pyrrolidinyl)-phenol, 5-ethyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 5-ethyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-ethyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 5-ethyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-ethyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 5-ethyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 5-ethyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 5-ethyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-ethyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-ethyl-3-(3-hydroxy-1-pyrrolidinyl)-phenol, 5-ethyl-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 5-ethyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 5-methyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 5-methyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-methyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 5-methyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-methyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 5-methyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 5-methyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 5-methyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-methyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-methyl-3-(3-hydroxy-1-pyrrolidinyl)phenol, 5-methyl-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 5-methyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)-phenol, 5-trifluormethyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(2-carboxamide -1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(2-hydroxymethyl-1-pyrrolidinyl)-phenol, 5-trifluormethyl-3-(2-methoxymethyl-1-pyrrolidinyl)-phenol, 5-trifluormethyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(3-hydroxy-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(3-hydroxymethyl-1-pyrrolidinyl)-phenol, 5-trifluormethyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-(2-hydroxy-ethyl)-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(2-methoxymethyl-1-pyrrolidinyl)-phenol, 6-(2-hydroxyethyl)-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 6-(2-hydroxy-ethyl)-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(3-hydroxy-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(3-methoxymethyl-1-pyrrolidinyl)-phenol, 6-ethyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-ethyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-ethyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-ethyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-ethyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 6-ethyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 6-ethyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-ethyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 6-ethyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-ethyl-3-(3-hydroxy-1-pyrrolidinyl)-phenol, 6-ethyl-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 6-ethyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 6-methyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-methyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-methyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-methyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-methyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 6-methyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 6-methyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-methyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 6-methyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-methyl-3-(3-hydroxy-1-pyrrol idinyl)phenol, 6-methyl-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 6-methyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-trifluormethyl -3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(2-hydroxymethyl-1-pyrrolidinyl) -phenol, 6-trifluormethyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(3-hydroxy-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(3-hydroxymethyl-1-pyrrolidinyl)-phenol and 6-trifluormethyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, or the physiologically tolerated salts thereof. Preferred are compounds of formula (I) wherein (i) R1 denotes hydrogen and/or (ii) R2 denotes hydrogen. Particularly well suited meta-aminophenol derivatives of formula (I) in terms of the overall invention are 3-(1-pyrrolidinyl)phenol, 4-fluoro-3-(-1-pyrrolidinyl)phenol, 4-chloro-3-(1-pyrrolidinyl)phenol and 2-methyl-3-(1-pyrrolidinyl)phenol or the physiologically tolerated salts thereof. The compounds of formula (I) can be used as free bases or in the form of their physiologically tolerated salts with inorganic or organic acids such as, for example, hydrochloric, sulfuric, phosphoric, acetic, propionic, lactic, or citric acid. The colorants of the invention contain the meta-aminphenol derivative of formula (I) in an amount from about 0.005% to 20% by weight, an amount from about 0.01% to 5.0% by weight and particularly from 0.1% to 2.5% by weight being especially preferred. Suitable developers are preferably 1,4-diaminobenzene (p-phenylene-diamine), 1,4-diamino-2-methylbenzene (p-toluylenediamine), 1,4-diamino-2,6-dimethylbenzene, 1,4-diamino-3,5-diethylbenzene, 1,4-diamino-2,5-dimethylbenzene, 1,4-diamino-2,3-dimethylbenzene, 2-chloro-1,4-diaminobenzene, 1,4-diamino-2-(thiophen-2-yl)benzene, 1,4-diamino-2-(thiophen-3-yl)benzene, 2-(6-2,5-methyl-pyridin-2-yl)-benzene-1,4-diamine, 2-thiazol-2-yl-benzene-1,4-diamino, 1,4-diamino-2-(pyridin-3-yl)benzene, 2,5-diaminobiphenyl, 2,5-diamino-4′-(1-methylethyl)-1,1′-biphenyl, 2,3′,5-triamino-1,1′-biphenyl, 2′-chloro-1,1′-biphenyl-2,5-diamine, 3′-fluoro-1,1′-biphenyl-2,5-diamine, 1,4-diamino-2-methoxymethylbenzene, 1,4-diamino-2-aminomethylbenzene, 3-(3-amino-phenylamino-propenyl)-1,4-diamino-benzene, 1,4-diamino-2-propenylbenzene,1,4-diamino-2-((phenylamino)methyl)-benzene, 1,4-diamino-2-((ethyl-(2-hydroxyethyl)-amino)methyl)benzene, 1,4-diamino-2-hydroxymethylbenzene, 1,4-diamino-2-(2-hydroxyethoxy)-benzene, 2-(2-(acetylamino)ethoxy)-1,4-diaminobenzene, 4-(phenyl-amino)aniline, 4-(dimethylamino)aniline, 4-(diethylamino)aniline, 4-(dipropylamino)aniline, 4-[ethyl(2-hydroxyethyl)amino]aniline, 4-[di(2-hydroxyethyl)amino]aniline, 4-[di (2-hydroxyethyl)amino]-2-methyl-aniline, 4-[(2-methoxyethyl)amino]aniline, 4-[(3-hydroxypropyl)amino]aniline, 4-[(2,3-dihydroxypropyl)amino]aniline, 4-(((4-aminophenyl)methyl)amino)aniline, 4-[(4-amino -phenylamino)-methyl]-phenol, 3-((4-amino-phenylamino)methyl)phenol, 1,4-diamino-N-(4-pyrrolidin-1-yl-benzyl)benzene, 1,4-diamino-N-furan-3-ylmethylbenzene, 1,4-diamino-N -thiophen-2-ylmethylbenzene, 1,4-diamino-N-furan-2-ylmethylbenzene, 1,4-diamino-N-thiophen-3-ylmethylbenzene, 1,4-diamino-N-benzylbenzene, 1,4-diamino-2-(1-hydroxyethyl)benzene, 1,4-diamino-2-(2-hydroxyethyl)-benzene, 1,4-diamino-2-(1-methylethyl) -benzene, 1,3-bis[(4-aminophenyl)-(2-hydroxyethyl)amino]-2-propanol, 1,4-bis[(4-aminophenyl) -amino]-butane, 1,8-bis(2,5-diaminophenoxy)-3,6-dioxaoctane, 2,5-diamino-4′-hydroxy-1,1′-biphenyl, 2,5-diamino-2′-trifluormethyl-1,1′-biphenyl, 2,4′,5-triamino-1,1′-biphenyl, 4-amino-phenol, 4-amino-3-methylphenol, 4-amino-3-(hydroxymethyl) -phenol, 4-amino-3-fluoro-phenol, 4-methylamino-phenol, 4-amino-2-(aminomethyl)phenol, 4-amino-2-(hydroxymethyl)phenol, 4-amino-2-fluorophenol, 4-amino-2-[(2-hydroxyethyl)-amino]methyl-phenol, 4-amino-2-methyl -phenol, 4-amino-2-(methoxymethyl)phenol, 4-amino-2-(2-hydroxyethyl)phenol, bis(5-amino-2-hydroxyphenyl)phenol, 5-amino-salicylic acid, 2,5-diamino-pyridine, 2,5,6-triamino-4-(1H)-pyrimidone, 4,5-diamino-1-(2-hydroxyethyl)-1H-pyrazole, 4,5-diamino-1-(1-methylethyl)-1H-pyrazole, 4,5-diamino-1-[(4-methylphenyl)methyl]-1H-pyrazole, 1-[(4-chlorophenyl)methyl]-4,5-diamino-1H-pyrazole, 4,5-diamino-1-methyl-1H-pyrazole, 4,5-diamino-1-pentyl-1H-pyrazole, 4,5-diamino-1-(phenylmethyl)-1H-pyrazole, 4,5-diamino-1-((4-methoxyphenyl)methyl-1H-pyrazole, 2-aminophenol, 2-amino-6-methylphenol, 2-amino-5-methyl-phenol, 4-amino-1,1′-biphenyl-3-ol, 2-amino-5-ethylphenol, 1,2,4-trihydroxybenzene, 2,4-diaminophenol, 1,4-dihydroxybenzene and 2-(((4-aminophenyl)amino)methyl)-1,4-diaminobenzene. Furthermore, in addition to the compounds of the formula (I), the colorant according to the invention can also comprise further known coupler substances, for example N-(3-dimethylaminophenyl)urea, 2,6-diaminopyridine, 2-amino-4-[(2-hydroxyethyl)amino]anisole, 2,4-diamino-1-fluoro-5-methylbenzene, 2,4-diamino-1-methoxy-5-methylbenzene, 2,4-diamino -1-ethoxy-5-methylbenzene, 2,4-diamino-1-(2-hydroxyethoxy)-5-methylbenzene, 2,4-di[(2-hydroxyethyl)amino]-1,5-dimethoxybenzene, 2,3-diamino-6-methoxypyridine, 3-amino-6-methoxy-2-(methylamino)-pyridine, 2,6-diamino -3,5-dimethoxypyridine, 3,5-diamino-2,6-dimethoxy-pyridine, 1,3-diaminobenzene, 2,4-diamino -1-(2-hydroxyethoxy)benzene, 1,3-diamino-4-(2,3-dihydroxypropoxy)benzene, 1,3-diamino-4-(3-hydroxy-propoxy)benzene, 1,3-diamino-4-(2-methoxyethoxy)benzene, 2,4-diamino-1,5-di(2-hydroxyethoxy)benzene, 1-(2-aminoethoxy)-2,4-diaminobenzene, 2-amino-1-(2-hydroxyethoxy) -4-methylaminobenzene, 2,4-diamino-phenoxyacetic acid, 3-[di(2-hydroxyethyl)amino]aniline, 4-amino-2-di[(2-hydroxyethyl)amino]-1-ethoxybenzene, 5-methyl-2-(1-methylethyl)phenol, 3-[(2-hydroxyethyl)amino]aniline, 3-[(2-aminoethyl)amino]aniline, 1,3-di(2,4-diaminophenoxy)propane, di(2,4-diaminophenoxy)methane, 1,3-diamino-2,4-dimethoxybenzene, 2,6-bis(2-hydroxyethyl)aminotoluene, 4-hydroxyindole, 3-dimethylaminophenol, 3-diethylaminophenol, 5-amino-2-methylphenol, 5-amino-4-fluoro-2-methylphenol, 5-amino-4-methoxy-2-methylphenol, 5-amino-4-ethoxy-2-methylphenol, 3-amino-2,4-dichlorophenol, 5-amino-2,4-dichlorophenol, 3-amino-2-methylphenol, 3-amino-2-chloro-6-methylphenol, 3-aminophenol, 2-[(3-hydroxyphenyl)-amino]acetamide, 5-[(2-hydroxyethyl)amino]-4-methoxy-2-methylphenol, 5-[(2-hydroxyethyl)amino]-2-methylphenol, 3-[(2-hydroxyethyl)amino]-phenol, 3-[(2-methoxyethyl)amino]phenol, 5-amino-2-ethylphenol, 5-amino-2-methoxyphenol, 2-(4-amino-2-hydroxyphenoxy)ethanol, 5-[(3-hydroxypropyl)amino]-2-methylphenol, 3-[(2,3-dihydroxypropyl)-amino]-2-methylphenol, 3-[(2-hydroxyethyl)amino]-2-methylphenol, 2-amino-3-hydroxypyridine, 2,6-dihydroxy-3,4-dimethylpyridine, 5-amino-4-chloro-2-methylphenol, 1-naphthol, 2-methyl-1-naphthol, 1,5-dihydroxy-naphthalene, 1,7-dihydroxy -naphthalene, 2,3-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, 2-methyl-1-naphthol acetate, 1,3-dihydroxybenzene, 1-chloro-2,4-dihydroxybenzene, 2-chloro-1,3-dihydroxybenzene, 1,2-dichloro-3,5-dihydroxy-4-methylbenzene, 1,5-dichloro-2,4-dihydroxybenzene, 1,3-dihydroxy-2-methylbenzene, 3,4-methylenedioxyphenol, 3,4-methylenedioxyaniline, 5-[(2-hydroxyethyl)amino]-1,3-benzodioxol, 6-bromo-1-hydroxy-3,4-methylenedioxybenzene, 3,4-diaminobenzoic acid, 3,4-dihydro-6-hydroxy-1,4(2H)-benzoxazine, 6-amino-3,4-dihydro-1,4(2H)-benzoxazine, 3-methyl-1-phenyl-5-pyrazolone, 5,6-dihydroxyindole, 5,6-dihydroxy-indoline, 5-hydroxyindole, 6-hydroxyindole, 7-hydroxyindole and 2,3-indolinedione. The additional coupler substances and developer substances may be present in the colorant according to the invention in each case individually or in the mixture with one another, where the total amount of coupler substances and developer substances in the colorant according to the invention (based on the total amount of the colorant) is in each case about 0.005% to 20% by weight, preferably about 0.01% to 5% by weight and in particular 0.1% to 2.5% by weight. The total amount of the developer substance-coupler substance combination present in the colorant according to the invention is preferably about 0.01% to 20% by weight, particularly preferred is an amount of from about 0.02% to 10% by weight and especially 0.2% to 6% by weight. The developer substances and coupler substances are generally used in approximately equimolar amounts; however, it is not disadvantageous if the developer substances are present in this regard in a certain excess or deficit, for example a coupler:developer ratio of from 1:2 to 1:0.5. In addition, the colorant according to the invention can additionally comprise other color components, for example 6-amino-2-methylphenol and 2-amino-5-methylphenol, and also customary natural, nature-identical or synthetic direct dyes, for example triphenylmethane dyes, such as 4-[(4′-aminophenyl)(4′imino-2′′,5′′-cyclohexadien-1′′-ylidene)methyl]-2-methylaminobenzene monohydrochloride (C.I. 42 510) and 4-[(4′-amino-3′-methylphenyl)(4′′-imino-3′′-methyl-2′′,5′′-cyclohexadien-1′′-ylidene)-methyl]-2-methylaminobenzene monohydrochloride (C.I. 42 520), aromatic nitro dyes, such as 4-(2′-hydroxyethyl)aminonitrotoluene, 2-amino-4,6-dinitrophenol, 2-amino-5-(2′-hydroxyethyl)aminonitrobenzene, 2-chloro-6-(ethylamino)-4-nitrophenol, 4-chloro-N-(2-hydroxyethyl-2-nitroaniline, 5-chloro-2-hydroxy-4-nitroaniline, 2-amino-4-chloro-6-nitrophenol or 1-[(2′-ureidoethyl)amino-4-nitrobenzene, azo dyes, such as 6-[(4′-aminophenyl)azo]-5-hydroxynaphthalene-1-sulfonic acid sodium salt (C.I. 14 805) or dispersion dyes, such as, for example, 1,4-diamino-anthraquinone and 1,4,5,8-tetraaminoanthraquinone, and basic or acidic direct dyes. The colorant can comprise these color components in an amount of from about 0.1% to 4.0% by weight. The coupler substances and developer substances and also the other color components, if they are bases, can of course also be used in the form of the physiologically compatible salts with organic or inorganic acids, such as, for example, hydrochloric acid, sulfuric acid, or phosphoric acid, or—if they have aromatic OH groups—in the form of these salts with bases, for example as alkali metal phenoxides. Moreover, if the colorants are to be used for dyeing hair, they may also comprise further customary cosmetic additives, for example antioxidants, such as ascorbic acid, thioglycolic acid, and sodium sulfite, and perfume oils, complexing agents, wetting agents, emulsifiers, thickeners, and care substances. The preparation form of the colorant according to the invention can, for example, be a solution, in particular an aqueous or aqueous-alcoholic solution. The particularly preferred preparation forms are, however, a cream, a gel, or an emulsion. Their composition is a mixture of the dye components with the additives customary for such preparations. Customary additives in solutions, creams, emulsions, or gels are, for example, solvents, such as water, lower aliphatic alcohols, for example ethanol, propanol or isopropanol, glycerol or glycols, such as 1,2-propylene glycol, and also wetting agents or emulsifiers from the classes of anionic, cationic, amphoteric or nonionogenic surface-active substances, such as, for example, fatty alcohol sulfates, oxyethylated fatty alcohol sulfates, alkylsulfonates, alkylbenzenesulfonates, alkyltrimethylammonium salts, alkylbetaines, oxyethylated fatty alcohols, oxyethylated nonylphenols, fatty acid alkanolamides, and oxyethylated fatty acid esters, also thickeners, such as higher fatty alcohols, starch, cellulose derivatives, petrolatum, paraffin oil, and fatty acids, and also care substances, such as cationic resins, lanolin derivatives, cholesterol, pantothenic acid, and betaine. The constituents mentioned are used in the amounts customary for such purposes, for example the wetting agents and emulsifiers in concentrations of from about 0.5% to 30% by weight, the thickeners in an amount of from about 0.1% to 25% by weight, and the care substances in a concentration of from about 0.1% to 5% by weight. Depending on the composition, the colorant of the invention can be weakly acidic, neutral, or alkaline. In particular, it has a pH from 6.8 to 11.5. According to the present invention for pH adjustment in the alkaline range the composition may further optionally comprise at least one source of alkalizing agent, preferably a source of ammonium ions and or ammonia. Any agent known in the art may be used such as alkanolamides for example monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, dipropanolamine, tripropanolamine, 2-amino-2-methyl-1, 3-propanediol, 2-amino-2-methyl-1-propanol, and 2-amino-2-hydroxymethyl-1,3-propanediol and guanidium salts. Particularly, preferred alkalizing agents are those which provide a source of ammonium ions. Any source of ammonium ions is suitable for use herein. Preferred sources include ammonium chloride, ammonium sulphate, ammonium nitrate, ammonium phosphate, ammonium acetate, ammonium carbonate, ammonium hydrogen carbonate, ammonium carbamate, ammonium hydroxide, percarbonate salts, ammonia, and mixtures thereof. Particularly preferred are ammonium carbonate, ammonium carbamate, ammonium hydrogen carbonate, ammonia, and mixtures thereof, or a mixture of ammonia and organic amines (particularly monoethanolamine or triethanolamine). The compositions of the present invention may comprise from about 0.1% to about 10% by weight, preferably from about 0.5% to about 5%, most preferably from about 1% to about 3% of an alkalizing agent, preferably ammonium ions. For pH adjustment in the acidic range, an inorganic or organic acid, for example phosphoric acid, acetic acid, citric acid, or tartaric acid, may be used. The compositions according to the present invention may comprise at least one source of an oxidizing agent for developing the hair color. Preferred oxidizing agents for use herein are water-soluble peroxygen oxidizing agents. “Water-soluble” as defined herein means that in standard condition at least 0.1 g, preferably 1 g, more preferably 10 g of said oxidizing agent can be dissolved in 1 liter of deionized water. The oxidizing agents are valuable for the initial solubilization and decolourization of the melanin (bleaching) and accelerate the oxidation of the oxidative dye precursors (oxidative dyeing) in the hair shaft. Any oxidizing agent known in the art may be utilized in the present invention. Preferred water-soluble oxidizing agents are inorganic peroxygen materials capable of yielding hydrogen peroxide in an aqueous solution. Water-soluble peroxygen oxidizing agents are well known in the art and include hydrogen peroxide, inorganic alkali metal peroxides such as sodium periodate and sodium peroxide and organic peroxides such as urea peroxide, melamine peroxide, and inorganic perhydrate salt bleaching compounds, such as the alkali metal salts of perborates, percarbonates, perphosphates, persilicates, persulphates, and the like. These inorganic perhydrate salts may be incorporated as monohydrates, tetrahydrates etc. Alkyl and aryl peroxides, and/or peroxidases may also be used. Mixtures of two or more such oxidizing agents can also be used if desired. The oxidizing agents may be provided in aqueous solution or as a powder which is dissolved prior to use. Preferred for use in the compositions according to the present invention are hydrogen peroxide, percarbonate, persulphates, and combinations thereof. According to the present invention the compositions comprise from about 0.1% to about 15% by weight, preferably from about 1% to about 10% by weight, and most preferably from about 2% to about 7% by weight of an oxidizing agent. Another preferred oxidizing agent for use herein is a source of peroxymonocarbonate ions. Preferably such a source is formed insitu from a source of hydrogen peroxide and a hydrogen carbonate ion source. Such an oxidizing agent has been found to be particularly effective at a pH of up to and including 9.5, preferably 7.5 to 9.5 more preferably about pH 9. Moreover, this system is also particularly effective in combination with a source of ammonia or ammonium ions. It has been found that this oxidizing agent can deliver improvements to the desired hair colour results particularly with regard to the delivery of high lift, while considerably reducing the odour, skin and scalp irritation and damage to the hair fibers. Accordingly, any source of these ions may be utilized. Suitable sources for use herein include sodium, potassium, guanidine, arginine, lithium, calcium, magnesium, barium, ammonium salts of carbonate, carbamate and hydrocarbonate ions, and mixtures thereof, such as sodium carbonate, sodium hydrogen carbonate, potassium carbonate, potassium hydrogen carbonate, guanidine carbonate, guanidine hydrogen carbonate, lithium carbonate, calcium carbonate, magnesium carbonate, barium carbonate, ammonium carbonate, ammonium hydrogen carbonate, and mixtures thereof. Percarbonate salts may also be utilized to provide both the source of carbonate ions and oxidizing agent. Preferred sources of carbonate ions, carbamate, and hydrocarbonate ions are sodium hydrogen carbonate, potassium hydrogen carbonate, ammonium carbamate, and mixtures thereof. According to the present invention the compositions comprise from about 0.1% to about 15% by weight, preferably from about 1% to about 10% by weight, and most preferably from about 1% to about 8% by weight of a hydrogencarbonate ion and from about 0.1% to about 10% by weight, preferably from about 1% to about 7% by weight, and most preferably from about 2% to about 5% by weight of a source of hydrogen peroxide. Especially preferred oxidants for developing the hair color are mainly hydrogen peroxide or a compound of addition of hydrogen peroxide to urea, melamine, sodium borate, or sodium carbonate, in the form of a 3 to 12%, preferably 6%, aqueous solution, as well as air oxygen. When a 6% hydrogen peroxide solution is used as the oxidant, the weight ratio of hair colorant to oxidant is 5:1 to 2:1, and preferably 1:1. Larger amounts of oxidant are used primarily when the hair colorant contains a higher dye concentration or when stronger hair bleaching is desired at the same time. According to the present invention the compositions may further comprise a source of radical scavenger. As used herein the term radical scavenger refers to a species that can react with a reactive radical, preferably carbonate radicals, to convert the reactive radical by a series of fast reactions to a less reactive species. Suitable radical scavengers for use herein include compounds according to the general formula (II): R1—Y—C(H)(R3)—R4—(C(H)(R5)—Y—R6)n (II) wherein Y is NR2, O, or S, preferably NR2, n is 0 to 2, and wherein R4 is monovalent or divalent and is selected from: (a) substituted or unsubstituted, straight or branched, alkyl, mono- or poly-unsaturated alkyl, heteroalkyl, aliphatic, heteroaliphatic, or heteroolefinic systems; (b) substituted or unsubstituted, mono- or poly-cyclic aliphatic, aryl, or heterocyclic systems; or (c) substituted or unsubstituted, mono-, poly-, or per-fluoro alkyl systems; the systems of (a), (b), and (c) comprising from 1 to 12 carbon atoms and 0 to 5 heteroatoms selected from O, S, N, P, and Si; and wherein R4 can be connected to R3 or R5 to create a 5, 6 or 7 membered ring; and wherein R1, R2, R3, R5, and R6 are monovalent and are selected independently from: (a), (b), and (c) described herein above, or H. Preferably, R4 is selected from: (a) substituted or unsubstituted, straight or branched, alkyl, heteroalkyl, aliphatic, heteroaliphatic, or heteroolefinic systems; (b) substituted or unsubstituted, mono- or poly-cyclic aliphatic, aryl, or heterocyclic systems; or (c) substituted or unsubstituted, mono-, poly-, or per-fluoro alkyl systems; more preferably R4 is selected from (a) substituted or unsubstituted, straight or branched, alkyl, heteroalkyl, aliphatic, or heteroaliphatic systems; (b) substituted or unsubstituted, aryl, or heterocyclic systems; or (c) substituted or unsubstituted, mono-, poly-, or per-fluoro alkyl systems; more preferably substituted or unsubstituted, straight or branched, alkyl, or heteroalkyl systems. Preferably, the R4 systems of (a), (b), and (c), described herein above, comprise from 1 to 8 carbon atoms, preferably from 1 to 6, more preferably from 1 to 4 carbon atoms and from 0 to 3 heteroatoms; preferably from 0 to 2 heteroatoms; most preferably from 0 to 1 heteroatoms. Where the systems contain heteroatoms, preferably they contain 1 eteroatom. Preferred heteroatoms include O, S, and N; more preferred are O and N; O being paricularly preferred. Preferably, R1, R2, R, R5, and R6 are selected independently from any of the systems defined for R4 above, and H. In alternative embodiments, any of R1, R2, R3, R4, R5, and R6 groups are substituted. Preferably, the substituent(s) is selected from: (a) the group of C-linked monovalent substituents consisting of: (i) substituted or unsubstituted, straight or branched, alkyl, mono- or poly-unsaturated alkyl, heteroalkyl, aliphatic, heteroaliphatic, or heteroolefinic systems; (ii) substituted or unsubstituted, mono- or poly-cyclic aliphatic, aryl, or heterocyclic system; or (iii) substituted or unsubstituted, monofluoroalkyl, polyfluoroalkyl or perfluoroalkyl systems; said systems of (i), (ii), and (iii) comprising from 1 to 10 carbon atoms and 0 to 5 heteroatoms selected from O, S, N, P, and Si; (b) the group of S-linked monovalent substituents consisting of SA1, SCN, SO2A1, SO3A1, SSA1, SOA1, SO2NA1A2, SNA1A2, and SONA1A2; (c) the group of O-linked monovalent substituents consisting of OA1, OCN and ONA1A2; (d) the group of N-linked monovalent substituents consisting of NA1A2, (NA1A2A3)+, NC, NA1OA2, NA1SA2, NCO, NCS, NO2, N═NA1, N═NOA1, NA1CN, NA1NA2A3; (e) the group of monovalent substituents consisting of COOA1, CON3, CONA12, CONA1COA2, C(═NA1)NA1A2, CHO, CHS, CN, NC, and X; and (f) the group consisting fluoroalkyl monovalent substituents consisting of monofluoroalkyl, polyfluoroalkyl perfluoroalkyl systems comprising from 1 to 12 carbon atoms and 0 to 4 heteroatoms. For the groups (b) to (e), described above, A1, A2, and A3 are monovalent and are independently selected from: (1) H; (2) substituted or unsubstituted, straight or branched, alkyl, monounsaturated or poly-unsaturated alkyl, heteroalkyl, aliphatic, heteroaliphatic or heteroolefinic systems; (3) substituted or unsubstituted, monocyclic or polycyclic aliphatic, aryl or heterocyclic systems; or (4) substituted or unsubstituted, monofluoroalkyl, polyfluoroalkyl or perfluoroalkyl systems; said systems of (2), (3), and (4) comprising from 1 to 10 carbon atoms and 0 to 5 heteroatoms selected from O, S, N, P, and Si; and wherein X is a halogen selected from the group consisting of F, Cl, Br, and I. Preferred substituents for use herein include those having a Hammett Sigma Para (σp) Value from −0.65 to +0.75, preferably from −0.4 to +0.5. Hammett Sigma Values are described in Advanced Organic Chemistry—Reactions, Mechanisms and Structure (Jerry March, 5th ed. (2001) at pages 368-375). Alternative suitable radical scavengers for use herein are compounds according to the general formula (III): wherein R1, R2, R3, R4, and R5 are each independently selected from H, COO−M+, Cl, Br, SO3−M+, NO2, OCH3, OH, or a C1 to C10 primary or secondary alkyl and M is either H or alkali metal. Preferably, the above-described radical scavengers have a pKa of more than 8.5 to ensure protonation of the hydroxy goup. Other suitable radical scavengers for use herein include those selected from group (III) benzylamine, imidazole, di-tert-butylhydroxytoluene, hydroquinone, guanine, pyrazine, piperidine, morpholine, methylmorpholine, 2-methyoxyethylamine, and mixtures thereof. Preferred radical scavengers according to the present invention are selected from the classes of alkanolamines, amino sugars, amino acids, esters of amino acids, and mixtures thereof. Particularly preferred compounds are: monoethanolamine, 3-amino-1-propanol, 4-amino-1-butanol, 5-amino-1-pentanol, 1-amino-2-propanol, 1-amino-2-butanol, 1-amino-2-pentanol, 1-amino-3-pentanol, 1-amino-4-pentanol, 3-amino-2-methylpropan-1-ol, 1-amino-2-methylpropan-2-ol, 3-aminopropane- 1,2-diol, glucosamine, N-acetylglucosamine, glycine, arginine, lysine, proline, glutamine, histidine, sarcosine, serine, glutamic acid, tryptophan, and mixtures thereof, and the salts such as the potassium, sodium and ammonium salts thereof, and mixtures thereof. Especially preferred compounds are glycine, sarcosine, lysine, serine, 2 methoxyethylamine, glucosamine, glutamic acid, morpholine, piperdine, ethylamine, 3 amino-1-propanol, and mixtures thereof. The radical scavengers according to the present invention preferably have a molecular weight of less than about 500, preferably less than about 300, more preferably less than about 250 in order to facilitate penetration of the radical scavenger into the hair fiber. The compositions of the present invention preferably comprise from about 0.1% to about 10% by weight, preferably from about 1% to about 7% by weight of radical scavenger. The radical scavenger is also preferably selected such that it is not an identical species as the alkalizing agent. According to one embodiment of the present invention the radical scavenger may be formed insitu in the hair dyeing compositions prior to application to the hair fibers. To use the afore-described colorants for oxidative dyeing of hair, said colorants are mixed with an oxidant immediately before use, and the mixture is applied to hair in an amount sufficient for hair treatment which, depending on hair fullness, is generally from about 60 to 200 grams. Suitable oxidants for developing the hair color are mainly hydrogen peroxide or a compound resulting from the addition of hydrogen peroxide to urea, melamine, sodium borate, or sodium carbonate, in the form of a 3 to 12% by weight, preferably 6% by weight, aqueous solution, as well as air oxygen. When a 6% hydrogen peroxide solution is used as the oxidant, the weight ratio of hair colorant to oxidant is 5:1 to 2:1, and preferably 1:1. Larger amounts of oxidant are used primarily when the hair colorant contains a higher dye concentration or when stronger hair bleaching is desired at the same time. The mixture is allowed to act on the hair at 15 to 50° C. for about 10 to 45 minutes and preferably for 30 minutes. The hair is then rinsed with water and dried. Optionally, this rinse can be followed with a shampoo wash, optionally followed by rinsing with a weak organic acid, for example citric or tartaric acid. The hair is then dried. The hair dyes according to the invention with a content of m-aminophenol derivatives of formula (I) as coupler substances permit hair colorations with excellent color fastness, in particular with regard to washing fastness and rubbing fastness. With regard to the coloring properties, the hair colorants according to the invention offer, depending on the nature and composition of the color components, a broad palette of different shades which ranges from brown, purple, violet to blue, and black shades. The color intensity of the color shades is particularly good. The very good coloring properties of the hair colorants according to the present application are further evident from the fact that these agents permit a coloring of gray, chemically non-predamaged hair without problems and with good coverage. The following examples illustrate the object of the invention in more detail without limiting ist scope. EXAMPLES Example 1 Synthesis of 3-(1-pyrrolidinyl)phenol A. Synthesis of 1-Bromo-3-methoxymethoxy-benzene To a solution of 31.4 g (183.3 mmol) of 3-Bromo-phenol in 450 mL of dried acetonitrile a dispersion of 12 g (274.9 mmol) of sodium hydride (55% in oil) was added portionwise at 0° C. The mixture was then allowed to agitate at 0° C. for 3 hours. A solution of 25 g (210.8 mmol) of chloromethyl ethyl ether in 30 mL of acetonitrile was added dropwise, and the mixture was allowed to agitate overnight at room temperature (20-30° C.). The reaction mixture was then filtered and the filter cake was washed with a small amount of acetone. The combined filtrates were evaporated. This gave 32.3 g of 1-Bromo-3-methoxymethoxy-benzene. The resulting crude product was used in the next step without further purification. 1H-NMR (300 MHz, DMSO): 7.26-7.16 ppm (m 3H); 7.02 ppm (dd, 1H); 5.25 ppm (s, 2H); 3.65 ppm (q, 2H); 3.5 ppm (t, 3H). B. Synthesis of 3-(1-pyrrolidinyl)phenol 7 g (30 mmol) of 1-Bromo-3-methoxymethoxy-benzene from step A and 2.5 g (35 mmol) of pyrrolidine were dissolved under argon in 60 mL of toluene. Then, 0.15 g (0.3 mmol) of bis(tri-t-butylphosphine)palladium(0), 2.5 g KOH und 0.6 g (0.15 mmol) cetyltrimethylammoniumbromid were added, and the reaction mixture was heated at 80° C. At the end of the reaction, the reaction mixture was poured into 200 mL of ethyl acetate, and the organic phase was extracted with 1N sodium hydroxide solution and then dried with magnesium sulfate. The solvent was distilled off in a rotary evaporator, and the residue was purified on silica gel using heptane/ethyl acetate (8/0.8). The product thus obtained was dissolved in 15 mL of ethanol and mixed with 10 mL of a 2.9 molar solution of ethanolic hydrochloric acid. The reaction mixture was then heated at 55° C. At the end of the reaction, the precipitate was filtered off, washed with ethanol, and then dried. 1H-NMR (300 MHz, DMSO): 7.4-6.9 ppm (m 2H); 6.6-6.4 ppm (m, 2H); 3.55-3.4 ppm (m, 4H); 2.15-1.95 ppm (m, 4H). Examples 2 to 5 Hair Colorants 0.00125 mole developer according to Table 1 0.00125 mole coupler of formula (I) according to Table 1 10.0 g potassium oleate (8% aqueous solution) 10.0 g ammonia (22% aqueous solution) 10.0 g isopropanol 0.3 g ascorbic acid to 100.0 g water Immediately before use, 30 g of the above dye solution was mixed with 30 g of a 6% aqueous hydrogen peroxide solution. The mixture was then applied to bleached hair. After an exposure time of 30 minutes at 40° C., the hair was rinsed with water, washed with a commercial shampoo, and dried. The resulting color shades are shown in Table 1. TABLE 1 Example Developer Coupler of Formula (I) Color 2 1,4-diamino-benzene 3-(1-pyrroldinyl)phenol natural blond 3 1,4-diamino-2-methyl- 3-(1-pyrroldinyl)phenol natural benzene blond 4 1,4-diamino-2-(2- 3-(1-pyrroldinyl)phenol natural hydroxyethyl)benzene blond sulfate 5 4,5-diamino-1-(2- 3-(1-pyrroldinyl)phenol purple hydroxyethyl)-1H- pyrazole sulfate Examples 6 to 25 Hair Colorants X g coupler S1 of formula (I) according to Table 2 U g primary intermediates E1 to E8 according to Table 3 Y g coupler K1 to K21 according to Table 2 Z g direct dye D1 to D3 according to Table 4 10.0 g of potassium oleate (8% aqueous solution) 10.0 g of ammonia (22% aqueous solution) 10.0 g ethanol 0.3 g ascorbic acid balance to 100.0 g water Immediately before use, 30 g of the foregoing dye solution was mixed with 30 g of a 6% aqueous hydrogen peroxide solution. The mixture was then applied to bleached hair. After an exposure time of 30 minutes at 40° C., the hair was rinsed with water, washed with a commercial shampoo, and dried. The dye quantity used and the color results are presented in Table 5. TABLE 2 Coupler Substances S1 3-(1-pyrrolidinyl)phenol K1 1,3-diaminobenzene K2 2-amino-4-(2′-hydroxyethyl)amino-anisol-sulfate K3 2,4-diamino-1-(2′-hydroxyethoxy)benzene-sulfate K4 2,4-diamino-5-fluoro-toluene-sulfate K5 3-amino-2-methylamino-6-methoxy-pyridin K6 3,5-diamino-2,6-dimethoxy-pyridin-dihydrochloride K7 2,4-diamino-5-ethoxy-toluene-sulfate K8 N-((3-Dimethylamino)phenyl)urea K9 1,3-Bis(2,4-diaminophenoxy)propane-tetrahydrochloride K10 3-amino-phenol K11 5-amino-2-methyl-phenol K12 5-amino-6-chlor-2-methyl-phenol K13 5-amino-4-fluor-2-methyl-phenol-sulfate K14 1-naphthol K15 1-acetoxy-2methyl-naphthalene K16 resorcinol K17 2-methyl-resorcinol K18 4-chloro-resorcinol K19 4-(2′-hydroxyethyl)amino-1,2- methylendioxybenzene*HCl K20 3,4-methylendioxy-phenol K21 2-amino-5-methyl-phenol TABLE 3 Developer Substances E1 1,4-diamino-2-methyl-benzene sulfate E2 1,4-diaminobenzol E3 1,4-diamino-2-(2-hydroxyethyl)benzene sulfate E4 3-methyl-4-amino-phenol E5 4-amino-2-aminomethyl-phenol-dihydrochloride E6 4-amino-phenol E7 N,N-bis(2′-hydroxyethyl)-p-phenylendiamin-sulfate E8 4,5-diamino-1-(2-hydroxyethyl)-1H-pyrazole sulfate TABLE 4 Direct Dyes D1 2,6-diamino-3-((pyridin-3-yl)azo)pyridin D2 6-chlor-2-ethylamino-4-nitro-phenol D3 2-amino-6-chloro-4-nitro-phenol TABLE 5 Hair Colorants Example Nr. 6 7 8 9 10 11 Dye (Dye quantity in gram) S1 1.40 0.080 0.010 0.32 3.00 0.075 E1 2.40 0.150 0.060 0.60 0.45 0.130 K2 0.15 0.004 2.00 0.015 K10 0.30 0.005 0.70 0.020 K11 0.030 0.02 K14 0.030 K17 0.040 0.15 D3 0.05 0.01 warm light blond light aubergine warm-brown blue-black pearlsilver-blond brown Example Nr. 12 13 14 15 16 17 Dye (Dye quantity in gram) S1 1.6 0.4 1.3 0.270 0.10 0.40 E1 1.8 0.9 2.4 0.60 0.21 0.9 E4 0.5 0.04 0.01 0.165 0.01 0.01 K2 0.1 K6 0.070 K8 0.03 K10 0.06 0.42 0.8 0.02 K11 0.60 0.06 0.165 0.01 0.02 K17 0.32 0.05 0.250 K19 0.05 K20 0.03 K21 0.01 0.30 D1 0.01 D2 0.01 0.02 D3 0.2 0.02 dark-mahagony purpur-brown black-brown chocolat-brown blond brown Example Nr. 19 20 21 22 23 24 25 Dye (Dye quantity in gram) S1 0.15 0.20 2.2 1.6 1.4 0.270 0.20 E1 0.9 3.8 3.2 2.5 2.3 1.9 0.9 E4 0.25 0.1 0.03 0.55 0.015 0.15 0.01 K1 0.30 K3 0.25 0.075 K4 0.2 K5 0.02 0.065 K7 0.025 K9 0.15 K10 0.4 0.1 0.42 0.75 0.015 K12 0.15 0.6 0.15 K13 0.015 K16 0.05 0.05 1.1 0.8 0.7 0.135 K17 0.05 0.25 K18 0.60 K19 1.00 1.00 0.05 K21 0.20 0.20 D2 0.010 0.015 D3 0.2 matt medium-brown dark-brown dark- black- chocolat- colorado- mahagony brown brown brown Examples 26 to 40 Hair Colorants X g coupler S1 of formula (I) according to Table 2 U g primary intermediates E1 to E8 according to Table 3 Y g coupler K1 to K21 according to Table 2 Z g direct dye D1 to D3 according to Table 4 15.0 g cetylstearyl alcohol 0.3 g ascorbic acid 3.5 g sodium lauryl alcohol diglycol ether sulphate (28% aqueous solution) 3.0 g ammonia, 25% aqueous solution 0.3 g sodium sulphite balance to 100.0 g water Immediately before use, 30 g of the above dye solution was mixed with 30 g of 6% aqueous hydrogen peroxide solution. The mixture was then applied to bleached hair. After an exposure time of 30 minutes at 40° C., the hair was rinsed with water, washed with a commercial shampoo, and dried. The hair had a blond shade. The dye quantity used and the color results are presented in Table 6. TABLE 6 Example Nr. 26 27 28 29 30 31 32 Dyes (Dye quantity in gram) S1 1.7 0.5 1.30 0.30 1.70 0.50 1.30 E1 1.45 0.70 1.70 0.55 E2 0.75 0.35 0.80 E6 0.5 0.03 0.008 0.145 0.5 0.03 0.008 K2 0.07 K6 0.07 0.07 K8 0.03 0.03 K10 0.07 0.415 0.80 0.07 0.415 K11 0.60 0.05 0.165 0.60 0.05 K16 0.15 0.15 K17 0.10 0.05 K21 0.015 0.275 0.015 D1 0.010 0.010 D2 0.015 D3 0.15 0.15 dark-mahagony purpur- black-brown chocolat- dark- purpur- black- brown brown mahagony brown brown Example Nr. 33 34 35 36 37 38 39 40 Dye (Dye quantity in gram) S1 2.20 0.05 0.030 0.05 2.20 0.05 0.030 0.05 E1 2.80 0.50 0.02 1.90 E2 1.40 0.25 0.01 0.85 E3 1.45 0.60 0.02 0.05 1.45 0.60 0.020 0.05 E4 0.01 0.01 0.10 0.01 E5 0.015 0.015 0.15 0.015 K1 0.20 0.20 K2 0.60 0.60 K3 0.30 0.30 K5 0.05 0.05 K6 0.01 0.01 K7 0.01 0.01 K8 0.50 0.5 K9 0.08 0.80 K10 0.30 0.03 0.02 0.30 0.03 0.025 K11 0.015 0.016 K12 0.300 0.315 K17 0.05 0.10 0.20 0.050 0.085 0.20 K18 0.05 0.05 K19 0.01 0.01 K20 0.50 0.50 K21 0.05 0.05 black brown light blond dark-brown black brown light blond dark- brown Unless stated otherwise, all of the percentages given in the present application are percentages by weight. All documents cited in the Detailed Description of the Invention are, in relevant part, incorporated herein by reference; the citation of any document is not to be construed as an admission that it is prior art with respect to the present invention. To the extent that any meaning or definition of a term in this written document conflicts with any meaning or definition of the term in a document incorporated by reference, the meaning or definition assigned to the term in this written document shall govern. While particular embodiments of the present invention have been illustrated and described, it would be obvious to those skilled in the art that various other changes and modifications can be made without departing from the spirit and scope of the invention. It is therefore intended to cover in the appended claims all such changes and modifications that are within the scope of this invention. ## Claims 1. An agent for the oxidative dyeing of keratin fibers based on a developer substance/coupler substance combination, comprising at least one m-aminophenol derivative of general formula (I), or its physiologically compatible, water-soluble salt, wherein R1 is selected from the group consisting of hydrogen, a C1-C6 alkyl group, C2-C4 hydroxyalkyl group, a C3-C4 dihydroxyalkyl group, a C1-C4 alkoxy group or a halogen atom; and R2 is selected from the group consisting of a hydroxy group, a carboxylic group, an aminocarbonylgroup or a hydroxymethyl group. 2. An agent according to claim 1, wherein R1 is hydrogen. 3. An agent according to claim 1, wherein the meta-aminophenol derivative of formula (I) is selected from the group consisting of: 2-chloro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-chloro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-chloro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 2-chloro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 2-chloro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 2-chloro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 2-chloro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 2-chloro-3-(3-hydroxy-1-pyrrolidinyl)phenol, 2-chloro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 2-chloro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 2-fluoro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-fluoro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-fluoro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 2-fluoro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 2-fluoro-3-(2-methoximethyl-1-pyrrolidinyl)phenol, 2-fluoro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 2-fluoro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 2-fluoro-3-(3-hydroxy-1-pyrrolidinyl)phenol, 2-fluoro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 2-fluoro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 2-methoxy-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-methoxy-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-methoxy-3-(2-hydroxy-1-pyrrolidinyl)-phenol, 2-methoxy-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 2-methoxy-3-(2-methoxymethyl-1-pyrrolidinyl)-phenol, 2-methoxy-3-(3-carboxylic acid-1-pyrrolidinyl) phenol, 2-methoxy-3-(3-carboxamide-1pyrrolidinyl)phenol, 2-methoxy-3-(3-hydroxy-1-pyrrolidinyl)phenol, 2-methoxy-3-(3-hydroxy-methyl-1-pyrrolidinyl)phenol, 2-methoxy-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 4-chloro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 4-chloro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 4-chloro-3-(2-hydroxy-1-pyrrolidinyl)phenol,4-chloro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 4-chloro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 4-chloro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 4-chloro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 4-chloro-3-(3-hydroxy-1-pyrrolidinyl)phenol, 4-chloro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol,4-chloro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 4-fluoro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 4-fluoro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 4-fluoro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 4-fluoro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 4-fluoro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 4-fluoro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 4-fluoro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 4-fluoro-3-(3-hydroxy-1-pyrrolidinyl)phenol, 4-fluoro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 4-fluoro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 4-methoxy-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 4-methoxy-3-(2-carboxamide-1-pyrrolidinyl)-phenol, 4-methoxy-3-(2-hydroxy-1-pyrrolidinyl)phenol, 4-methoxy-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 4-methoxy-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 4-methoxy-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 4-methoxy-3-(3-carboxamide-1-pyrrolidinyl)phenol, 4-methoxy-3-(3-hydroxy-1-pyrrolidinyl)phenol, 4-methoxy-3-(3-hydroxy-methyl-1-pyrrolidinyl)phenol, 4-methoxy-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 5-chloro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-chloro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 5-chloro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-chloro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 5-chloro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 5-chloro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-chloro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-chloro-3-(3-hydroxy-1-pyrrolidinyl)phenol, 5-chloro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 5-chloro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 5-fluoro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-fluoro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 5-fluoro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-fluoro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 5-fluoro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 5-fluoro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-fluoro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-fluoro-3-(3 -hydroxy-1-pyrrolidinyl)phenol, 5-fluoro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 5-fluoro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 5-methoxy-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-methoxy-3-(2-carboxamide-1-pyrrolidinyl)phenol, 5-methoxy-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-methoxy-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 5-methoxy-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 5-methoxy-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-methoxy-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-methoxy-3-(3-hydroxy-1-pyrrolidinyl)phenol, 5-methoxy-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 5-methoxy-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 6-chloro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-chloro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-chloro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-chloro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 6-chloro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 6-chloro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 6-chloro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-chloro-3-(3-hydroxy-1-pyrrolidinyl)-phenol, 6-chloro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 6-chloro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 6-fluoro-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-fluoro-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-fluoro-3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-fluoro-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 6-fluoro-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 6-fluoro-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 6-fluoro-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-fluoro-3-(3-hydroxy-1-pyrrolidinyl)-phenol, 6-fluoro-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 6-fluoro-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 6-methoxy-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-methoxy-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-methoxy-3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-methoxy-3-(2-hydroxy-methyl-1-pyrrolidinyl)phenol, 6-methoxy-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 6-methoxy-3-(3-carboxylic acid-1-pyrrolidinyl )phenol, 6-methoxy-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-methoxy-3-(3-hydroxy-1-pyrrolidinyl)phenol, 6-methoxy-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 6-methoxy-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-(2-hydroxy-ethyl)-3-(2-hydroxy-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(2-hydroxy-methyl-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)-phenol, 2-(2-hydroxyethyl)-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(3-carboxamide-1-pyrrolidinyl)phenol, 2-(2-hydroxy-ethyl)-3-(3-hydroxy-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(3-hydroxy-methyl-1-pyrrolidinyl)phenol, 2-(2-hydroxyethyl)-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 2-ethyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 2-ethyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-ethyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-ethyl-3-(2-hydroxy-1-pyrrolidinyl)-phenol 2-ethyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 2-ethyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 2-ethyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 2-ethyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 2-ethyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 2-ethyl-3-(3-hydroxy-1-pyrrolidinyl)phenol, 2-ethyl-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 2-ethyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 2-methyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 2-methyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-methyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-methyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 2-methyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 2-methyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 2-methyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 2-methyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 2-methyl -3-(3-carboxamide-1-pyrrolidinyl)phenol, 2-methyl-3-(3-hydroxy-1-pyrrolidinyl)phenol, 2-methyl-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 2-methyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)-phenol, 2-trifluormethyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(2-methoxymethyl-1-pyrrolidinyl)-phenol, 2-trifluormethyl -3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 2-trifluormethyl -3-(3-hydroxy-1-pyrrolidinyl)phenol, 2-trifluormethyl-3-(3-hydroxymethyl-1-pyrrolidinyl)-phenol, 2-trifluormethyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-(2-hydroxy-ethyl)-3-(2-carboxamide-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl )-3-(2-methoxymethyl-1-pyrrolidinyl)-phenol, 5-(2-hydroxyethyl)-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl )phenol, 5-(2-hydroxyethyl )-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-(2-hydroxy-ethyl)-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(3-hydroxy-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 5-(2-hydroxyethyl)-3-(3-methoxymethyl-1-pyrrolidinyl)-phenol, 5-ethyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 5-ethyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-ethyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 5-ethyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-ethyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 5-ethyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 5-ethyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 5-ethyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-ethyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-ethyl-3-(3-hydroxy-1-pyrrolidinyl)-phenol, 5-ethyl-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 5-ethyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 5-methyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 5-methyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-methyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 5-methyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-methyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 5-methyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 5-methyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 5-methyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-methyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-methyl-3-(3-hydroxy-1-pyrrolidinyl)phenol, 5-methyl-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 5-methyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)-phenol, 5-trifluormethyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(2-hydroxymethyl-1-pyrrolidinyl)-phenol, 5-trifluormethyl-3-(2-methoxymethyl-1-pyrrolidinyl)-phenol, 5-trifluormethyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(3-hydroxy-1-pyrrolidinyl)phenol, 5-trifluormethyl-3-(3-hydroxymethyl-1-pyrrolidinyl)-phenol, 5-trifluormethyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 6-(2-hydroxymethyl)-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-(2-hydroxy-ethyl)-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(2-methoxymethyl-1-pyrrolidinyl)-phenol, 6-(2-hydroxyethyl)-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 6-(2-hydroxy-ethyl)-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(3-hydroxy-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 6-(2-hydroxyethyl)-3-(3-methoxymethyl-1-pyrrolidinyl)-phenol, 6-ethyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-ethyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-ethyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-ethyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-ethyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 6-ethyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 6-ethyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-ethyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 6-ethyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-ethyl-3-(3-hydroxy-1-pyrrolidinyl)-phenol, 6-ethyl-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 6-ethyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 6-methyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-methyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-methyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-methyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-methyl-3-(2-hydroxymethyl-1-pyrrolidinyl)phenol, 6-methyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 6-methyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-methyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 6-methyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-methyl-3-(3-hydroxy-1-pyrrolidinyl)phenol, 6-methyl-3-(3-hydroxymethyl-1-pyrrolidinyl)phenol, 6-methyl-3-(3-methoxymethyl-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(2-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(2-carboxylic acid-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(2-carboxamide-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(2-hydroxy-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(2-hydroxymethyl-1-pyrrolidinyl)-phenol, 6-trifluormethyl-3-(2-methoxymethyl-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(3-(2-hydroxyethyl)-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(3-carboxylic acid-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(3-carboxamide-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(3-hydroxy-1-pyrrolidinyl)phenol, 6-trifluormethyl-3-(3-hydroxymethyl-1-pyrrolidinyl)-phenol and 6-trifluormethyl -3-(3-methoxymethyl-1-pyrrolidinyl)phenol, or the physiologically tolerated salts thereof. 4. An agent according to claim 1, comprising the meta-aminophenol derivative of formula (I) in an amount of from 0.005% to 20% by weight. 5. An agent according to claim 1, wherein the developer substance is selected from the group consisting of 1,4-diaminobenzene, 1,4-diamino-2-methylbenzene, 1,4-diamino-2,6-dimethylbenzene, 1,4-diamino-3,5-diethylbenzene, 1,4-diamino-2,5-di-methylbenzene, 1,4-diamino-2,3-dimethylbenzene, 2-chloro-1,4-diaminobenzene, 1,4-diamino-2-(thiophen-2-yl)benzene, 1,4-diamino-2-(thiophen-3-yl)benzene, 4-(2,5-diaminophenyl)-2-((diethylamino)methyl)thiophene, 2-chloro-3-(2,5-diaminophenyl)thiophene, 1,4-diamino-2-(pyridin-3-yl)benzene, 2,5-diaminobiphenyl, 2,5-diamino-4′-(1-methylethyl)-1,1′-biphenyl, 2,3′,5-triamino-1,1′-biphenyl, 1,4-diamino-2-methoxymethylbenzene, 1,4-diamino-2-aminomethylbenzene, 1,4-diamino-2-((phenylamino)methyl)benzene, 1,4-diamino-2-((ethyl-(2-hydroxyethyl)-amino)methyl)benzene, 1,4-diamino-2-hydroxymethyl-benzene, 1,4-diamino-2-(2-hydroxyethoxy)benzene, 2-(2-(acetylamino)-ethoxy)-1,4-diaminobenzene, 4-phenylaminoaniline, 4-dimethylamino-aniline, 4-diethylaminoaniline, 4-dipropylaminoaniline, 4-[ethyl(2-hydroxyethyl)-amino]aniline, 4-[di(2-hydroxy-ethyl)amino]aniline, 4-[di(2-hydroxyethyl)-amino]-2-methylaniline, 4-[(2-methoxyethyl)amino]aniline, 4-[(3-hydroxy-propyl)amio]aniline, 4-[(2,3-dihydroxy-propyl)amino]aniline, 4-(((4-aminophenyl)methyl)amino)aniline, 4-[(4-aminophenylamino)-methyl]phenol, 1,4-diamino-N-(4-pyrrolidin-1-yl-benzyl)benzene, 1,3-dihydroxy-2-((2-furylmethyl)aminomethyl)benzene, 1,4-diamino-N-thiophen-2-ylmethylbenzene 1,4-diamino-N-furan-2-ylmethylbenzene, 1,4-diamino-N-thiophen-3-ylmethylbenzene, 1,4-diamino-N-benzyl benzene, 1,4-diamino-2-(1-hydroxyethyl)benzene, 1,4-diamino-2-(2-hydroxyethyl)-benzene, 1,4-diamino-2-(1-methylethyl)benzene, 1,3-bis[(4-aminophenyl)-(2-hydroxyethyl)amino]-2-propanol, 1,4-bis[(4-aminophenyl)amino]butane, 1,8-bis(2,5-diaminophenoxy)-3,6-dioxaoctane, 2,5-diamino-4′-hydroxy-1,1′-biphenyl, 2,5-diamino-2′-trifluoromethyl-1,1′-biphenyl, 2,4′,5-triamino-1,1′-biphenyl, 4-aminophenol, 4-amino-3-methyl phenol, 4-amino-3-(hydroxymethyl)phenol, 4-amino-3-fluorophenol, 4-methylaminophenol, 4-amino-2-(aminomethyl)phenol, 4-amino-2-(hydroxymethyl)phenol, 4-amino-2-fluorophenol, 4-amino-2-[(2-hydroxyethyl)amino]methylphenol, 4-amino-2-methylphenol, 4-amino-2-(methoxymethyl)phenol, 4-amino-2-(2-hydroxyethyl)phenol, 5-aminosalicylic acid, 2,5-diaminopyridine, 2,4,5,6-tetraaminopyrimidine, 2,5,6-triamino-4-(1H)-pyrimidone, 4,5-diamino-1-(2-hydroxyethyl)-1H-pyrazole, 4,5-diamino-1-(1-methylethyl)-1H-pyrazole, 4,5-diamino-1-[(4-methylphenyl)mcthyl]-1H-pyrazole, 1-[(4-chloro-phenyl)methyl]-4,5-diamino-1H-pyrazole, 4,5-diamino-1-methyl-1H-pyrazole, 4,5-diamino-1-pentyl-1H-pyrazole, 4,5-diamino-1-(phenylmethyl)-1H-pyrazole, 4,5-diamino-1-((4-methoxyphenyl)methyl-1H-pyrazole, 2-aminophenol, 2-amino-6-methylphenol, 2-amino-5-methylphenol, 1,2,4-trihydroxybenzene, 2,4-diaminophenol, 1,4-dihydroxybenzene and 2-(((4-aminophenyl)-amino)methyl)-1,4-diaminobenzene. 6. An agent according to claim 1, further comprising at least one additional coupler substance and/or at least one direct dye. 7. An agent according to claim 1, wherein the developer substances and coupler substances, based on the total amount of the colorant, are present in each case in a total amount of from 0.005% to 20% by weight. 8. An agent according to claim 1, wherein the agent is a hair dye.
s3://data.kl3m.ai/documents/uspto/07490888.json	text/markdown	# Patent ## Title System for counterbalancing a tailgate ## Abstract A counterbalancing system is provided that can be easily installed to an exterior of a tailgate and provides a mechanism for arresting the tailgate in an open position. The system includes a stop assembly coupled to the vehicle and a counterbalance assembly adapted to be coupled in a pretensioned position to an outer periphery of the tailgate, the counterbalance assembly providing a counterbalance force when engaged with the stop assembly while the tailgate is opened or closed. ## Background RELATED APPLICATION This application is a continuation of U.S. application Ser. No. 11/061,988, filed Feb. 18, 2005, now U.S. Pat. No. 7,240,946 B2, published on Jul. 10, 2007, which claims the benefit of U.S. Provisional Application No. 60/546,102, filed on Feb. 18, 2004. The entire teachings of the above applications are incorporated herein by reference. BACKGROUND OF THE INVENTION Typically, a tailgate is pivotally mounted between body side panels forming the pillars at the rear of the vehicle. The tailgate pivots about a hinge axis between a horizontal, open position and a vertical, closed position. Preferably, the mounting assemblies for the tailgate permit the tailgate to be removed, removal typically being accomplished when the tailgate is pivoted to a position between the fully open or fully closed position. For example, the tailgate may include hinge pins that extend outwardly along the hinge axis that removably connect into brackets carried on the truck body. When the tailgate is pivoted to a predetermined intermediate position, for example, 15° away from the fully closed position, at least one of the hinge pins slips through a slot in the connecting bracket as the tailgate is lifted at one end from the truck body. Some of the tailgate mounting assemblies include counterbalance mechanisms, such as torque rods for assisting with the opening and closing of the tailgate. These torque rods are located, at least in part, within the tailgate for spring biasing between the tailgate and the body panel pillars. These torque rods typically require numerous components to assemble the torque rod to the tailgate. In some instances, it may be desirable to keep the tailgate in the open position, such as for transporting material having a greater length than vehicle's bed. As such, the tailgate can be susceptible to closing by way of the counterbalancing mechanism. For example, the tailgate might bounce in a direction toward closure if the vehicle were to inadvertently go over a bump or into a pothole, and the counterbalancing mechanism would then assist in potentially closing the tailgate. SUMMARY OF THE INVENTION The present invention provides a counterbalancing system that can be easily installed to an exterior of a tailgate and provide a mechanism for arresting the tailgate in an open position. The system includes a stop assembly coupled to the vehicle and a counterbalance assembly adapted to be coupled in an optional pretensioned position to an outer periphery of the tailgate, the counterbalance assembly providing a counterbalance force when engaged with the stop assembly while the tailgate is opened or closed. The stop assembly can be adapted to be coupled to an existing hinge pin of the vehicle. The stop assembly can include a semicircular groove for slidably engaging the counterbalance assembly. The counterbalance assembly can include a spring member comprising a first portion and a second portion that extends traversely from the first portion. The second portion can include a first notch positioned proximal to and below an end of the spring member for engaging the stop assembly and arresting the tailgate in a first position, wherein the first position can allow the tailgate to be arrested in a partially opened position. The second portion can further include a second notch positioned proximal to and below the first notch for engaging the stop assembly and arresting the tailgate in a second position, wherein the second position can allow the tailgate to be arrested in a fully opened position. The spring member can be a torque rod. The stop assembly and the counterbalance assembly can be coupled as not to interfere with removal of the tailgate from the vehicle. The stop assembly and or the counterbalance assembly can be adapted to be spring-loaded for ease of installation of the tailgate to the vehicle. BRIEF DESCRIPTION OF THE DRAWINGS The foregoing and other objects, features and advantages of the invention will be apparent from the following more particular description of preferred embodiments of the invention, as illustrated in the accompanying drawings in that like reference characters refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention. FIG. 1A shows an exploded perspective view of a counterbalance assembly of the present invention; FIG. 1B shows an exploded perspective view a stop assembly of the present invention; FIG. 2 shows a pretension angle “A” of a counterbalance assembly of FIG. 1; FIGS. 3A-3B illustrate installation of the present invention to a tailgate of a vehicle; FIG. 3C illustrates installation of the tailgate to the vehicle; FIGS. 4A-4D illustrate the opening of the tailgate using the crank arm of FIG. 2; FIG. 5 shows another embodiment of a crank arm of the invention; and FIGS. 6A-6D illustrate the opening of the tailgate using the crank arm of FIG. 5. DETAILED DESCRIPTION OF THE INVENTION A description of preferred embodiments of the invention follows. Generally, an externally mounted counterbalance mechanism is provided to assist with the opening and closing of a tailgate of a vehicle, such as a truck, minivan, station wagon, etc. The counterbalance mechanism can also include a series of safety stops that arrest the tailgate in predetermined positions. FIG. 1A shows an exploded perspective view of a counterbalance assembly 11 of the present invention. The counterbalance assembly 11 includes a spring member 12, a plurality of brackets (20, 22, 34), and bracket screws (24, 26, 32, 40) for attaching the counterbalance assembly 11 to an exterior of the tailgate in an optional pretensioned position as will be explained in further detail below. In one embodiment, the spring member 12 is a torque rod. The material used for the spring member 12 should be chosen as not to fatigue as the spring member is rotated. FIG. 1B shows an exploded perspective view of a stop assembly 13 of the present invention. The stop assembly 13 includes a stop bracket 44, a stop pin 42, stop pin screws (46, 48), and bracket screws (52, 54) for attaching the stop assembly 13 to an existing hinge pin 50 on the vehicle. The stop bracket 44 includes an upper portion 62, a lower portion 64, and an intermediate portion 60. The intermediate portion 60 provides an offset between the upper portion 62 and the lower portion 64. The stop pin 42 fastens to the upper portion 62 of the stop bracket 44. As a result, the stop pin 42 can easily flex outward laterally, but is relatively rigid in the fore and aft direction. The stop pin 42 includes a semicircular groove 56 facing forward and a tapered face 58 facing backward. The semicircular groove 56 is positioned laterally to cradle a section of the spring member 12 (FIG. 1A) once the tailgate is installed. The semicircular groove can be replaced by a roller assembly, such as a one way roller. FIG. 2 shows a pretension angle “A” of the counterbalance assembly 11. The spring member 12 is bent 90° to create a straight section 14 and a crank arm 16. Typically, a length of the straight section 14 is greater than a length of the crank arm 16. The straight section 14 includes a flat portion 30 that is disposed at an angle “A” (zero torque position) relative to a center axis of the crank arm 16, typically in the range of 60°. Bracket 22 includes a flat surface 28 for mating with the flat surface 30 of the straight section 14 such that free rotation of the counterbalance assembly 11 is prevented. Bracket 34 includes a lip 36 for holding the spring member 12 in a pretensioned position as described in further detail below. Pretensioning of the counterbalance assembly 11 is optional and provides for a greater restoring force than that of an assembly having no pretension. FIGS. 3A-3B illustrate the installation of the spring member 12 of the preceding figures. Brackets 20, 22 are attached to the bottom 8 of a tailgate 18 and bracket 34 is attached to a side 38 of the tailgate. The lip 36 of the bracket 34 should be on an edge inward toward a bed of a vehicle. Once the brackets 22, 24, 34 have been installed, the spring member 12 is inserted into brackets 20, 22 with the flat portion 30 of the straight section 14 aligned to fit into the respective flat mating surface 28 of the bracket 22 until the crank arm 16 hits the side 38 of the tailgate 18 as shown in FIG. 3A. The spring member 12 can freely slide in and out of the brackets 20, 22, but cannot rotate once the spring member 12 is engage with bracket 22. The crank arm 16 can then be forced in a counterclockwise direction relative to FIGS. 3A and 3B until it clears the top of the lip 36 on the retaining bracket 34. At that time, the spring member 12 can be fully inserted into bracket 22 and secured with screw 32, as shown in FIG. 3B. The rotation of the crank arm 16 reduces angle “A” (FIG. 2) to approximately 0°. This reduction creates an amount of torque on the spring member 12 that left unrestrained by the lip 36 would restore the spring member 12 to its normal or zero torque position. Although the straight section 14 of the spring member 12 is shown across the entire length of the tailgate 18, it should be understood the length of the straight section 14 can be any length that provides a sufficient restoring force. FIG. 3C shows a cutaway view of the tailgate 18 mounted to a vehicle 10. The tailgate 18 of FIGS. 3A and 3B is rotated to align with the vehicle 10 as shown. The stop assembly 13 can be mounted to an existing hinge pin 50 located on the vehicle 10. It should be understood that the tailgate 18 is mounted to the vehicle 10 in the conventional manner as known in the art. Installation of the tailgate 18 is described with reference to the preceding figures. First, a first trunnion 66 (FIG. 3B) can be inserted over a respective hinge pin 50 on a body of the vehicle 10, and while holding the tailgate 18 at an approximately 45° slant, a second trunnion (not shown) can slid over a slanted hinge pin (not shown), at that point the tailgate 18 can be closed. In some instances, the stop pin 42 can obstruct the crank arm 16 as the tailgate 18 is lifted, but by virtue of its tapered face 58 (FIG. 1B) the stop bracket 44 and the crank arm 16 flex laterally out and in, respectively, to allow the crank arm 16 to pass into position. Once the crank arm 16 is past the stop pin 42, the stop bracket 44 and the crank arm 16 spring back into position laterally, and the crank arm 16 is captured by the groove 56 (FIG. 1B) of the stop pin 42. It should be realized that the flexing action described above is merely a convenience feature during the installation of the tailgate 18. The operation of the present invention would remain unchanged if the stop bracket 44 were rigid. Thus, the operator would merely be forced to hold the tailgate 18 straight up and down as he engages the first hinge pin, then lower it approximately 45 degrees to engage the second hinge pin. FIGS. 4A-4D illustrate the opening of the tailgate 18 using the crank arm 16 of FIG. 2. The viewing angle of this illustration is looking through the near side of the vehicle 10 (FIG. 3C) in the direction of the hinge pin 50. The stop pin 42 is attached to the vehicle 10 and is stationary relative to movement of the tailgate 18. FIG. 4A shows the tailgate 18 in a closed position with the crank arm 16 remaining in the pretensioned position by the lip 36 of the bracket 34. There is approximately 15° of free travel of the tailgate 18 between the closed position and engagement of the spring member 12 and the stop pin 42. In this position the opening gravitational moment acting on the tailgate is very slight and the pretensioning of the torsion rod can be chosen to exceed it easily such that the tailgate is arrested in a “safety stop” position. As shown in FIG. 4B, the tailgate is engaged with the crank arm 16. Once the spring member 12 and the stop pin 42 are engaged, a counterbalance force or restoring force is applied to the tailgate 18 to assist an operator with either opening or closing the tailgate 18. That is, the spring member 12 tries to restore itself to the normal position as shown in FIG. 2. As the tailgate 18 is lowered further as shown in FIG. 4C, the amount of restoring force on the spring member 12 increases since the spring member 12 is rotated further from its normal position. The tailgate 18 is then dropped to the fully open position shown in FIG. 4D. At this point the amount of restoring force on the spring member 12 is greatest since the spring member 12 is rotated furthest from its normal position. FIG. 5 shows another embodiment of the crank arm 16 of the preceding figures. The crank arm 16′ is shaped to include two curved notches “B” and “D” and a curved section “C” for arresting or locking the tailgate 18 in predetermined positions as explained with reference to FIGS. 6A-6D. The notches “B” and “D” prevent the tailgate from inadvertent closure. It should be understood that any number of notches or curves can be used to arrest the tailgate in a predetermined position. Further, the deeper the notches the more force is required to move the tailgate from the predetermined position. FIGS. 6A-6D illustrate the opening of the tailgate 18 using the crank arm 16′ of FIG. 5. The viewing angle of this illustration is the same as the viewing angle as described with reference to FIGS. 4A-4D. FIG. 6A shows the tailgate 18 in a closed position with the crank arm 16′ remaining in the pretensioned position by the lip 36 of bracket 34. There is approximately 15° of free travel of the tailgate 18 between the closed position and engagement of the spring member 12 and the stop pin 42. Once the spring member 12 and the stop pin 42 are engaged, a counterbalance force or restoring force is applied to the tailgate 18 to assist an operator with either opening or closing the tailgate 18. In this position the opening gravitational moment acting on the tailgate is very slight and the pre tensioning of the torsion rod can be chosen to exceed it easily such that tailgate is arrested in a “safety stop” position. As shown in FIG. 6B, the tailgate is held or locked in a “safety stop” or arrested position once the stop pin 42 engages notch “B” of the crank arm 16′. The notch “B” further enhances arresting the drop of the tailgate. The notch “B” of the crank arm 16′ can be either straight or curved as shown. The curvature makes it possible to better counterbalance the sinusoidal gravitational pull by the linear stress-strain characteristic of the spring member 12. To lower the tailgate beyond this point requires the operator to pull the tailgate 18 in a downward direction past notch “B” as shown in FIG. 6C. The amount of restoring force on the spring member 12 increases since the spring member 12 is rotated further from its normal position. The tailgate 18 can then be dropped to the fully open position shown in FIG. 6D as the notch “D” of the crank arm 16′ engages the stop pin 42. At this point the amount of restoring force on the spring member 12 is greatest since the spring member 12 is rotated furthest from its normal position. The depth of the notch “D” determines how firmly the tailgate is restrained in the open position, such as to prevent an inadvertent closure of the tailgate. As an additional feature to cushion the drop of the tailgate, the sliding action of the crank arm 16 can be utilized to push against a viscous damper mounted on the truck just above the stop pin 42 (not shown). While this invention has been particularly shown and described with references to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the invention encompassed by the appended claims. For example, the crank arm may terminate in a laterally positioned pin that rides up and down over a shaped cam surface mounted to the truck. Although the counterbalance assembly is shown to be in a pretension position, it should be understood that pretension is not necessary to provide the counterbalancing means. ## Claims 1. A system for counterbalancing a tailgate of a vehicle, comprising: a stop assembly coupled to the vehicle; and a counterbalance assembly providing a counterbalance force when engaged with the stop assembly while the tailgate is opened or closed and the counterbalance assembly, prior to engagement with the stop assembly, allowing for motion, without the counterbalance force, between closed and partially opened positions. 2. The system of claim 1, wherein the stop assembly is adapted to be coupled to an existing hinge pin of the vehicle. 3. The system of claim 1, wherein the stop assembly includes a semicircular groove for slidably engaging the counterbalance assembly. 4. The system of claim 1, wherein the stop assembly and the counterbalance assembly are coupled as not to interfere with removal of the tailgate from the vehicle. 5. The system of claim 1, wherein the stop assembly and the counterbalance assembly are adapted to be spring-loaded for ease of installation of the tailgate to the vehicle. 6. The system of claim 1, wherein the stop assembly or the counterbalance assembly is adapted to be spring-loaded for ease of installation of the tailgate to the vehicle. 7. The system of claim 1, wherein the counterbalance assembly includes a spring member comprising a first portion and a second portion that extends transversely from the first portion. 8. The system of claim 7, wherein the spring member is a torque rod. 9. A method of assembling a counterbalancing system for a tailgate of a vehicle, comprising: coupling a stop assembly to the vehicle; and coupling a counterbalance assembly providing a counterbalance force when engaged with the stop assembly while the tailgate is opened or closed and the counterbalance assembly, prior to engagement with the stop assembly, allowing for motion, without the counterbalance force, between closed and partially opened positions. 10. The method of claim 9, wherein the stop assembly is adapted to be coupled to an existing hinge pin of the vehicle. 11. The method of claim 9, wherein the stop assembly and the counterbalance assembly are coupled as not to interfere with removal of the tailgate from the vehicle. 12. The system of claim 9, wherein the stop assembly and the counterbalance assembly are adapted to be spring-loaded for ease of installation of the tailgate to the vehicle. 13. The system of claim 9, wherein the stop assembly or the counterbalance assembly is adapted to be spring-loaded for ease of installation of the tailgate to the vehicle. 14. The method of claim 9, wherein the counterbalance assembly includes a spring member comprising a first portion and a second portion that extends transversely from the first portion. 15. The method of claim 14, wherein the spring member is a torque rod. 16. A system for counterbalancing a tailgate of a vehicle, comprising: a stop assembly coupled to the vehicle; and a counterbalance assembly providing a counterbalance force when engaged with the stop assembly while the tailgate is opened or closed, the counterbalance assembly including a spring member comprising a first portion and a second portion that extends transversely from the first portion, and the second portion including a first notch positioned proximal to and below an end of the spring member for engaging the stop assembly and arresting the tailgate in a first position. 17. The system of claim 16, wherein the first position allows the tailgate to be arrested in a partially opened position. 18. The system of claim 16, wherein the second portion includes a second notch positioned proximal to and below the first notch for engaging the stop assembly and arresting the tailgate in a second position. 19. The system of claim 18, wherein the second position allows the tailgate to be arrested in a fully opened position. 20. A method of assembling a counterbalancing system for a tailgate of a vehicle, comprising: coupling a stop assembly to the vehicle; and coupling a counterbalance assembly providing a counterbalance force when engaged with the stop assembly while the tailgate is opened or closed, the counterbalance assembly including a spring member comprising a first portion and a second portion that extends transversely from the first portion, and the second portion including a first notch positioned proximal to and below an end of the spring member for engaging the stop assembly and arresting the tailgate in a first position. 21. The method of claim 20, wherein the first position allows the tailgate to be arrested in a partially opened position. 22. The method of claim 20, wherein the second portion includes a second notch positioned proximal to and below the first notch for engaging the stop assembly and arresting the tailgate in a second position. 23. The method of claim 22, wherein the second position allows the tailgate to be arrested in a fully opened position.
s3://data.kl3m.ai/documents/uspto/07491342.json	text/markdown	# Patent ## Title Bonded semiconductor substrate manufacturing method thereof ## Abstract The present invention provides a bonded substrate fabricated to have its final active layer thickness of 200 nm or lower by performing the etching by only 1 nm to 1 μm with a solution having an etching effect on a surface of an active layer of a bonded substrate which has been prepared by bonding two substrates after one of them having been ion-implanted and then cleaving off a portion thereof by heat treatment. SC-1 solution is used for performing the etching. A polishing, a hydrogen annealing and a sacrificial oxidation may be respectively applied to the active layer before and/or after the etching. The film thickness of this active layer can be made uniform over the entire surface area and the surface roughness of the active layer can be reduced as well. ## Background This application is a 371 of international application PCT/JP2004/004886, which claims priority based on Japanese patent application No. 2003-099541 filed Apr. 2, 2003, which is incorporated herein by reference. FIELD OF THE INVENTION The present invention relates to a bonded semiconductor substrate and a manufacturing method thereof, and more particularly to such a bonded semiconductor substrate and a manufacturing method thereof that comprises an active layer formed by cleaving and separating a portion of an active layer substrate, specifically the semiconductor substrate having an uniform thickness of the active layer across an entire surface thereof without inducing any peel-off of the active layer, even if the active layer of thin film has the thickness as thin as 0.2 μm or lower. DESCRIPTION OF THE PRIOR ART The bonded semiconductor substrate has been broadly studied, especially in the field of semiconductors, from the viewpoint of its feature created by bonding together a support substrate and an active layer substrate having a different property from the support substrate so as to allow the finished bonded semiconductor substrate to have a specific property that is different from the property given by the support substrate alone (see Non-patent Document 1). One typical bonded substrate is represented by an SOI (Silicon On Insulator) substrate. The SOI substrate generally employs a polished wafer (PW) of silicon that is provided as a support substrate in the SOI substrate. On the other hand, in the circumstances where the demand for the higher integration and multi-functionality of an LSI to be constructed on the silicon substrate is getting stricter, a delayed signal over a wired line has become a critical problem. The LSI according to the prior art includes an integrated electric circuit element that is stacked on a top layer of the silicon wafer (at a depth of some ten μm from the top surface) having a thickness of 500-800 μm. As one solution to address this problem, an SOI substrate has been used recently. The SOI substrate has a configuration comprising an active layer in which a device is formed and a support substrate which is supporting the active layer with an embedded silicon oxide film having a thickness of some ten to some hundred nm which is interposed between the active layer and the support substrate. In this type of SOI substrate, respective devices are separated completely from each other by the intervening embedded silicon oxide film. This may facilitate the higher integration of devices, including the possible multi-functionality, that could be provided in a three-dimensional configuration, thereby allowing for a high-speed operation as well as reduced errors in software and thus providing higher reliability and also suppressing a power consumption. [Non-patent Document 1] Semiconductor Wafer Bonding, Q. Y. Tong and U. Gosele, 1999, John Wiley & Son The SOI substrate typically has the active layer of thin film in a ranger of some ten Å (Angstrom) to 20 μm thick. Specifically, the smart cut method (Patent Document 1, 2) is known as one of the methods for fabricating the SOI substrate having the active layer of a thickness not greater than some μm. This defines such a method in which a light element, such as hydrogen, is implanted into a wafer prepared for the active layer and then any undesired portion of the wafer for the active layer is cleaved and separated at the site of implantation therein. More specifically, in this method, by using a portion of a silicon oxide film as an embedded silicon oxide film, the active layer wafer and the support substrate wafer are bonded together and thus produced bonded wafer is subject to a heat treatment, and then the active layer is cleaved and separated at a site of implantation of the hydrogen ions thus to successfully fabricate the SOI substrate having the active layer of thin film. Besides, the active layer that has been just defined by the cleavage has good uniformity in film thickness from the view point of macro surface, because a film thickness thereof has been controlled by the energy from the hydrogen implantation. In the viewpoint of micro surface, however, roughness of the top surface of the active layer is quite significant. In order to reduce the roughness of the active layer surface after the cleavage process, the CMP (Chemical Mechanical Polishing) utilizing a chemical action and a mechanical action at the same time is applied to the active layer surface (Non-patent Document 2). Only this CMP process is so far effective to obtain the active layer surface that is comparable in roughness to the typical polished wafer. Further, since the surface portion to be cleaved is defined inside a damaged layer formed by the hydrogen ion implantation, a certain depth of damaged layer could reside in the active layer surface after the cleaving process. The damage layer in the active layer surface would be an obstacle in forming the device and accordingly needs to be removed. This damaged layer emerges across a film thickness exceeding a certain value (on the order of 1000 Å in a practical condition) without any exception because it is introduced when the hydrogen ions having been implanted into the substrate are decelerated. For the purpose of preparing the active layer film for a target thickness in addition to removing the damaged layer of interest, a hydrogen annealing for providing a heat treatment in a reducing atmosphere containing hydrogen gas and an oxide film removal for removing an oxide film that has been once formed over the active layer are carried out in combination with and in addition to the CMP process (Patent Document 3). [Patent Document 1] U.S. Pat. No. 5,374,564, Specification [Patent Document 2] U.S. Pat. No. 6,020,252, Specification [Non-patent Document 2] IEICE Trans, Electron, Vol., E80C, No. 3, Page 358, 1997 [Patent Document 3] Japanese Patent Laid-open Publication No. 2000-124092 However, there have been the following defects in association with the manufacturing method of the SOI according to the above-described prior art bonding methods. Among those, there has been a fear that the film thickness distribution in the active layer could be worse upon applying the chemical mechanical polishing to the surface of the active layer by using a polishing apparatus. This is because the polishing process provided by the polishing apparatus is carried out in such a condition where the surface of the active layer of the SOI substrate is pressed against a polishing cloth spread over a polishing platen during the polishing while the SOI substrate being held on a polishing head, and consequently a polishing drop tends to be formed in a peripheral region of the wafer. Since this tendency could be more critical as the thickness to be removed in the CMP increases, there has been a limitation in achieving the preparation of the film thickness of the active layer only by the CMP. Especially, when the active layer thickness is made as thin as 200 nm or lower, there has been observed another problem that the peel-off of the active layer occurs during the CMP process due to a micro void existing in a bonding interface. This micro void is derived from a micro concavity and convexity defined in the surfaces of the wafers to be bonded and it is believed that this kind of micro void could not be annihilated by the commonly applied heat treatment for bonding (as will be described later), differently from other micro voids on the mm order that are observed in the X-ray topography and/or in the supersonic method. Besides, when applying the hydrogen annealing to the surface of the active layer, a high temperature annealing is applied, for example, in the hydrogen gas atmosphere at 1200° C. for one hour. This has made the process more complicated and led to higher cost. In addition, when such a large-sized wafer that has a diameter of 300 mm is subject to the hydrogen annealing, a single wafer processing method has been commonly practiced and this has led to lower throughput. Further, when a process for reducing a roughness of the surface of the active layer is provided by the oxide film removal, for example, the bonded substrate is introduced into a thermal oxidation processing furnace where the bonded substrate is heat treated in an oxidizing gas atmosphere to thereby achieve the thermal oxidation of the substrate including the damaged portion in the surface of the active layer, forming resultantly the silicon oxide film. Then, the bonded substrate is cleaned with a HF cleaning fluid, so that the damaged portion in the surface of the active layer can be removed together with the silicon oxide film. According to the instant oxide film removal method, the entire procedure has been made complicated as described above and so a long processing time has been required. Further disadvantageously, it has likely been to lead to cost increase. Furthermore, since the heat treatment is involved, there has been a possibility that metal contamination could be induced in the active layer. In the light of the above fact, the inventors of the present invention have made an enthusiastic research and found that if a solution having an etching effect is used to perform the micro-etching in a range of 1 nm to 1 μm on the surface of the active layer after the cleaving process, the active layer having a surface of uniform film thickness and of reduced roughness could be obtained and further advantageously that the process for reducing the surface roughness as described above could be simplified and associatively the processing cost could be reduced. Furthermore, since this process employs the wet etching using the solution as described above, it has been made possible to employ the batch processing. Consequently, the process time could be shortened and the throughput could be increased. This wet etching is associated with a further advantage that the damage would not be introduced or damage, if any, could be removed. This profitably works to provide a great effect especially in that if the thickness of the active layer is made as thin as 200 nm or thinner, the peel-off of the active layer during the CMP resultant from the micro voids existing in the bonding interface can be prevented. The inventors of the present invention has completed the present invention by further finding that there would be almost no fear that the metal contamination is induced in the active layer since the wet etching no more involves the heat treatment. Although some process using a chemical solution for the purpose of cleaning is associated with the etching, the present invention can be distinguished from the typical cleaning process in that the present invention takes advantage of the etching effect in a positive manner, where an adequate etching time is set so as to provide a good control of the thickness of active layer. An object of the present invention is to provide a bonded substrate and a manufacturing method thereof, in which such an active layer that has a uniform thickness across an entire surface and a reduced surface roughness can be obtained, wherein a process for reducing the surface roughness can be simplified and resultantly a cost required for that process can be reduced, and the batch processing is made feasible, thereby shortening a process time and increasing throughput, and further favorably there is almost no fear of peel-off of the active layer as well as no fear of metal contamination in the process. SUMMERY OF THE INVENTION A first invention provides a bonded substrate fabricated to have its final active layer thickness of 200 nm or lower by performing an etching process on a surface of an active layer formed over a support substrate by cleaving off a portion of an active layer wafer, for the purpose of controlling the thickness of said active layer, said etching process carried out by using a solution having an etching effect so as to achieve the etching by a range of 1 nm to 1 μm. In the manufacturing method of an SOI wafer in accordance with above-described smart cut method, ions of a light element, such as hydrogen, are implanted from a surface of a wafer for active layer (also referred to as an active layer wafer for simplicity) having a silicon oxide film formed thereon, and the active layer wafer and a wafer for support substrate (also referred to as a support substrate wafer for simplicity) are bonded together at a room temperature while using said ion-implanted surface as a bonding surface for the active layer wafer, and then thus fabricated bonded substrate is heat treated at 400° C. or higher. At this stage, the active layer wafer is cleaved at its region where the hydrogen ions have been implanted, to thereby fabricate the SOI substrate having the active layer. After that, the bonded substrate is further heat treated at 1000° C. or higher temperature in order to enhance a bonding strength. The active layer wafer and the support substrate wafer may employ a single crystal silicon wafer, for example. Further, the single crystal silicon wafer with a single crystal film of Si, SiGe, SiC or the like, which has been grown epitaxially over the silicon wafer, may be employed. This invention can work effectively in the fabrication of the SOI substrate having the active layer not thicker than 200 nm. Besides, the thickness of the embedded oxide film is in a range of some ten nm to some hundred nm, for example. A preferred etching amount is defined by 5 nm to 500 nm. The etching amount less than 1 nm is too small to obtain any etching effect. On the other hand, the etching amount over 1 μm is too large, which makes it difficult to control a film thickness of the active layer. As for the solution having an etching effect, for example, a SC-1 (Standard Cleaning 1) cleaning fluid may be employed which is used typically in the RCA method. Other etchant, including an acid etchant such as a mixed acid of HF/HNO3 and an alkaline etchant such as KOH, NaOH, may be employed. A second invention provides a manufacturing method of a bonded substrate having its final active layer thickness of 200 nm or lower by performing an etching process on a surface of an active layer formed over a support substrate by cleaving off a portion of an active layer wafer, for the purpose of controlling the thickness of said active layer, said etching process carried out by using a solution having an etching effect so as to achieve the etching by a range of 1 nm to 1 μm. An etching bath is filled with the above-described etchant, and the bonded substrate is dipped in this etchant for an adequate time period while maintaining the temperature of the etchant and the like under the managed condition, to thereby control the thickness of the active layer. A third invention provides a manufacturing method of a bonded substrate in accordance with the second invention, in which an etching rate in said etching process is not greater than 100 nm/min. A preferred etching rate is in a range of 0.1 nm/min to 10 nm/min. The etching rate exceeding 100 nm/min may cause disadvantageously a reduced process margin for a correct film thickness control. A fourth invention provides a manufacturing method of a bonded substrate in accordance with the second invention, in which said solution having an etching effect is a solution of pH 9 or higher containing alkaline chemicals and an oxidizer. The alkaline chemicals may employ an aqueous solution of ammonia, for example. Other solutions, including an aqueous solution of sodium hydrate, an aqueous solution of calcium hydrate and the like, may be used. Besides, the oxidizer may employ an aqueous solution of hydrogen peroxide. Other solutions, such as an aqueous solution of ozone, may be used. A preferred pH value of this solution is between pH 9 to pH 13. The pH level lower than pH9 can't provide a sufficient etching ability as the alkali, but the pH level over pH13 may cause a problem that the etching rate could be too high. A fifth invention provides a manufacturing method of a bonded substrate in accordance with the third invention, in which said solution having an etching effect is a solution of pH 9 or higher containing alkaline chemicals and an oxidizer. A sixth invention provides a manufacturing method of a bonded substrate in accordance with the second invention, in which said solution having an etching effect is a solution of pH 9 or higher containing an aqueous solution of ammonia and an aqueous solution of hydrogen peroxide. This method uses the aqueous solution of ammonia as the alkaline chemicals and the aqueous solution of hydrogen peroxide as the oxidizer. The mixed solution of the aqueous solution of ammonia and the aqueous solution of hydrogen peroxide may include the SC-1 cleaning fluid, for example. The compounding ratio by volume of the components in the SC-1 cleaning fluid is typically represented by 1:x:y (x=1 to 2, y=5 to 100) for the aqueous ammonia:the aqueous hydrogen peroxide:water. The fluid temperature of the SC-1 cleaning fluid is preferably in a range of 30° C. to 90° C. The temperature below 10° C. can't provide a sufficient etching ability, but the temperature over 95° C. causes a rapid evaporation of the aqueous ammonia and makes it difficult to control the composition. A seventh invention provides a manufacturing method of a bonded substrate in accordance with the third invention, in which said solution having an etching effect is a solution of pH 9 or higher containing an aqueous solution of ammonia and an aqueous solution of hydrogen peroxide. An eighth invention provides a manufacturing method of a bonded substrate in accordance with the second invention, in which after said etching process, a thickness of said active layer is measured and based on said obtained measurement data, said etching process is repeated until said thickness of the active layer across its entire area comes near to a predetermined value of thickness (a target thickness). As for a device for measuring the thickness of the active layer, for example, a spectro-ellipsometer may be employed which measures the thickness of the active layer by entering a polarized light onto a surface of the active layer and measuring a change in a polarized condition of a reflected light. The measurement of the thickness of the active layer may be performed at each time of the etching applied to the surface of the active layer. Alternatively, the film thickness may be measured after a predetermined times of etching has been repeated. A ninth invention provides a manufacturing method of a bonded substrate in accordance with the third invention, in which after said etching process, a thickness of said active layer is measured and based on said obtained measurement data, said etching process is repeated until said thickness of the active layer across its entire area comes near to a predetermined value of thickness (a target thickness). A tenth invention provides a manufacturing method of a bonded substrate in accordance with the fourth invention, in which after said etching process, a thickness of said active layer is measured and based on said obtained measurement data, said etching process is repeated until said thickness of the active layer across its entire area comes near to a predetermined value of thickness (a target thickness). An eleventh invention provides a manufacturing method of a bonded substrate in accordance with the fifth invention, in which after said etching process, a thickness of said active layer is measured and based on said obtained measurement data, said etching process is repeated until said thickness of the active layer across its entire area comes near to a predetermined value of thickness (a target thickness). A twelfth invention provides a manufacturing method of a bonded substrate in accordance with the sixth invention, in which after said etching process, a thickness of said active layer is measured and based on said obtained measurement data, said etching process is repeated until said thickness of the active layer across its entire area comes near to a predetermined value of thickness (a target thickness). A thirteenth invention provides a manufacturing method of a bonded substrate in accordance with the seventh invention, in which after said etching process, a thickness of said active layer is measured and based on said obtained measurement data, said etching process is repeated until said thickness of the active layer across its entire area comes near to a predetermined value of thickness (a target thickness). A fourteenth invention provides a manufacturing method of a bonded substrate in accordance with any one of the second to the thirteenth inventions, in which one of following steps is performed on said active layer surface of said bonded substrate before said etching process, said steps including: (1) a step of chemical mechanical polishing process taking advantage of a chemical effect and a mechanical effect at the same time; (2) a step of hydrogen annealing process for performing a heat treatment in a reducing atmosphere containing hydrogen; and (3) a step of forming a silicon oxide film over said active layer and then removing said silicon oxide film along with a damaged portion of said active layer, which has been created in said cleaving process. A fifteenth invention provides a manufacturing method of a bonded substrate in accordance with any one of the second to the thirteenth inventions, in which one of following steps is performed on said active layer surface of the bonded substrate after said etching process, said steps including: (1) a step of chemical mechanical polishing process taking advantage of a chemical effect and a mechanical effect at the same time; (2) a step of hydrogen annealing process for performing a heat treatment in a reducing atmosphere containing hydrogen; and (3) a step of forming a silicon oxide film over said active layer and then removing said silicon oxide film along with a damaged portion of said active layer, which has been created in said cleaving process. A sixteenth invention provides a manufacturing method of a bonded substrate in accordance with any one of the second to the thirteenth inventions, in which one of following steps is performed on said active layer surface of the bonded substrate after and before said etching process, said steps including: (1) a step of chemical mechanical polishing process taking advantage of a chemical effect and a mechanical effect at the same time; (2) a step of hydrogen annealing process for performing a heat treatment in a reducing atmosphere containing hydrogen; and (3) a step of forming a silicon oxide film over said active layer and then removing said silicon oxide film along with a damaged portion of said active layer, which has been created in said cleaving process (1) The polishing apparatus used for the CMP process is not limited. Either of the single wafer processing or the batch processing may be used. Either of a single side polishing apparatus for polishing only one side of a semiconductor wafer or a double side polishing apparatus for polishing both front and back surfaces of a semiconductor wafer at the same time may be used. Further, the single side polishing apparatus of waxless type may be used, which comprises a polishing platen and a polishing head disposed opposite to said polishing platen and in which a semiconductor wafer is chucked with water on a surface of the polishing head opposite to the polishing platen via a backing pad. A polishing cloth may include a continuous expanded pad of suede type, for example. Further, the polishing cloth of non-woven porous fabric type made from polyester felt impregnated with polyurethane may be employable. Further, the polishing cloth of expanded urethane type made of slices of the expanded urethane block may be used, as well. The polishing agent may employ a slurry containing loose abrasive grains such as colloidal silica (silica sol) and fumed silica, for example. Further, the slurry of ceria type using cerium oxide may also be employable. Alternatively, a fluid containing no abrasive grains may be used to perform so-called no-abrasive grain polishing. Yet further, the polishing cloth of bonded abrasive grain type may be employed without using any polishing agent. (2) In the hydrogen annealing, an annealing apparatus is used to provide a heat treatment in the 100% hydrogen atmosphere at a temperature in a range of 1000° C. to 1350° C. for ten minutes to two hours. This allows the surface of the active layer to be fused and thus fluidized to create the surface of low roughness. In addition, the defect from the precipitation of oxygen in the active layer can be reduced and thus the quality of active layer can be improved. (3) The oxide film removal referred here in represents the technology used to remove the damage region formed in the wafer surface layer, which is commonly referred to as the sacrificial oxidation. Specifically, the SOI substrate is inserted into the thermal oxidation treatment furnace, where the SOI substrate is heat-treated in the atmosphere of oxidizing gas at a temperature in a range of 800° C. to 1350° C. for ten minutes to 50 hours to thereby form the silicon oxide film having a thickness in a range of 2 nm to 2.25 μm over the top surface of the active layer including the damaged portion emerging upon the hydrogen ion implantation. After that, the silicon oxide film is fused to be lost by bringing the top surface of the active layer into contact with the HF cleaning fluid by, for example, an immersion process. During this process, the top surface portion of the active layer, which has been roughened during the cleaving process, can be removed together with the silicon oxide film. Respective steps defined in (1) through (3) may be performed individually, for example, after the etching process. Alternatively, any two of those steps from (1) through (3) may be selectively applied. Yet further, all of the steps from (1) through (3) may be applied. Specifically, the process may follow a particular sequence, including, for example: (a) etching→CMP→oxide film removal (silicon oxide film thickness not greater than 300 nm); (b) etching→CMP→etching; (c) etching→hydrogen annealing; (d) oxide film removal→CMP→etching; (e) oxide film removal→etching; (f) CMP→dry etching→etching; and (g) CMP→etching. According to the bonded substrate in accordance with the first invention and the manufacturing method of a bonded substrate in accordance with the second invention, after the active layer having been formed by cleaving off a portion of the active layer wafer, the surface of the active layer is etched only by the thickness of 1 nm to 1 μm with the solution having the etching effect. AS a result, the final active layer thickness will be no greater than 20 nm. The final active layer means an active layer at the stage where the etching, polishing and the like have been previously done and then the final cleaning process has been finished. Owing to these processes, the film thickness of the active layer after the cleavage is made uniform over the entire surface area thereof and also these can advantageously simplify the process for achieving the lower surface roughness and accordingly reduce the cost therefore. Further advantageously, due to the fact that this etching is the wet etching, such as dipping in the etchant, the batch processing for handling a plurality of wafers all at once may be employable, thereby allowing the process time to be shorter and thus the throughput to be increased. Furthermore, differently from the conventionally practiced hydrogen annealing, oxide film removal and dry etching, the process of the present invention is carried out without using the heat treatment, and so there could be almost no fear that any metal contamination is induced in the active layer. Especially, according to the manufacturing method of a bonded substrate in accordance with the eighth to the thirteenth inventions, after the etching process, the thickness of the active layer is measured, and based on the measured thickness, an amount of subsequent etching can be determined within the range of 1 nm to 1 μm so as to repeat the etching process. This advantageously allows the uniformity in thickness to be achieved over the entire surface area of the active layer in a stable manner. According to the manufacturing method of a bonded substrate in accordance with the fourteenth to the sixteenth inventions, since at least one of the steps of: (1) chemical mechanical polishing; (2) hydrogen annealing; and (3) oxide film removal, may be applied to the surface of the active layer of the bonded substrate before and/or after the etching process, the uniformity in film thickness of the active layer after the cleavage can be enhanced and the roughness of the surface of the active layer can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart showing a manufacturing method of a bonded substrate according to a first embodiment of the present invention; FIG. 2 is a flow chart showing a manufacturing method of a bonded substrate according to a second embodiment of the present invention; FIG. 3 is a flow chart showing a manufacturing method of a bonded substrate according to a third embodiment of the present invention; FIG. 4 is a flow chart showing a manufacturing method of a bonded substrate according to a fourth embodiment of the present invention; and FIG. 5 is a flow chart showing a manufacturing method of a bonded substrate according to a fifth embodiment of the present invention. DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described with reference to the attached drawings. FIG. 1 is a flow chart showing a manufacturing method of a bonded substrate (SOI substrate) according to a first embodiment of the present invention. As shown in FIG. 1, firstly a wafer for active layer (silicon wafer) 10 is prepared by applying to a single-crystal silicon ingot that has been pulled up by the CZ method, each of the processes including slicing, beveling, lapping, etching and polishing so as to form it into a wafer having a thickness of 725 μm and a diameter of 200 mm (8 inches) with one-side or both-sides thereof mirror finished. On the other hand, a wafer for support substrate (silicon wafer) 20 is prepared by using the same manufacturing method as that used for the wafer for active layer 10 so as to be formed into a wafer having the same thickness and the same diameter as the wafer for active layer and a mirror finished surface. The active layer wafer 10 from those two is introduced into a thermal oxidation furnace, where it is treated with the thermal oxidation at 900° C. while allowing a predetermined amount of oxygen gas to flow into the furnace. This produces an insulating silicon oxide film 10a of 2000 Å (angstrom) thick extending over an entire exposed surface of the active layer wafer 10. It is to be noted that on the active layer wafer 10, an epitaxial layer may be formed instead of the above-mentioned silicon oxide film 10a in order to differentiate its property from that of the support substrate wafer. A medium current ion implanter is used to implant hydrogen ions into the active layer wafer 10 from a wafer surface side thereof at a density of 5.0×1016 atmos/cm2. A depth of implantation is about 3450 A (angstrom) and an accelerating voltage is 28.5 keV. This can produce a hydrogen ion implanted layer (implanted and damaged layer) 10b on top of the active layer wafer 10. After that, the active layer wafer 10 and the support substrate wafer 20 are bonded together (at a room temperature to 50° C.) with the surface of the active layer wafer 10 and the mirror polished surface of the support substrate wafer 20 used as bonding surfaces so as to form a bonded wafer 30. As a result of this bonding, the portion of the silicon oxide film 10a interposed between the active layer wafer 10 and the support substrate wafer 20 is formed into an embedded silicon oxide film 30a. A thickness of the embedded silicon oxide film 30a is 2000 A. It is to be noted that the support substrate wafer 20 may also be firstly treated so that its surface is oxidized and then bonded together with the active layer wafer 10. In next step, the bonded wafer 30 is introduced into a thermal oxidation furnace for bonding, where it experiences a heat treatment for forming bubbles under the oxygen gas atmosphere at 500° C. for one hour. As a result, hydrogen atoms have gathered intensively inside the active layer wafer 10. This causes a large number of regions of high density hydrogen bubble to emerge inside the active layer wafer 10, and the unnecessary portion of the active layer wafer 10 is cleaved away at those regions. In more specific, the hydrogen implanted into the silicon produces a crystal defect and a micro cavity, and upon annealing at 500° C. adjacent micro cavities are coupled to be large in size. Then, the cleavage occurs at a depth of the highest hydrogen concentration. Consequently, the active layer wafer 10 is thinned and turned to be the active layer 10a in the form of thin film having the thickness on the order of 2 μm. It is to be noted that the unnecessary portion of the active layer wafer 10 that has been cleaved away can be reused as the support substrate wafer 20. Subsequently, the heat treatment is applied to the bonded wafer 30 at 1100° C. for two hours. This enhances the bonding strength between the active layer wafer 10 and the support substrate wafer 20. After that, the etching is performed by a small amount over the exposed portion of the bonded wafer 30, from which the unnecessary portion has been already removed, by using a solution having an etching effect. In this illustrated embodiment, SC-1 solution is employed as an etchant. The SC-1 solution is a solution containing an aqueous ammonia as an alkaline chemical and an aqueous hydrogen peroxide as an oxidant. A composition of the SC-1 solution herein has employed a compounding ratio by volume of 1:2:10 for the aqueous ammonia: the aqueous hydrogen peroxide:water. In addition to the above description, a result of an experiment will be presented which was conducted in such a manner that a plurality of 8-inch SOI wafers were loaded to a wafer cassette for 25-pieces, though not shown, and the cassette was dipped in the SC-1 solution (at 85° C.) having the above composition within a cleaning bath. The etching time was 90 minutes. The etched amount determined through the measuring (at 81 points in a plane with an Edge Exclusion of 5 mm) of the film thickness before and after the etching process with a film thickness measuring device, which will be described later, was 922 Å (angstrom) in in-plane average and 44 Å in in-plane Max-Min for a slot No. 2 of the wafer cassette; 936 Å in in-plane average and 51 Å in in-plane Max-Min for a slot No. 13; and 952 Å in in-plane average and 50 Å in in-plane Max-Min for a slot No. 24. The term “in-plane (in a wafer surface)” used herein represents an entire area of the wafer surface defined in the inner side with respect to said width of Edge Exclusion from the outer circumference. Further, the term “in-plane Max-Min” refers to a difference between the maximum thickness and the minimum thickness in all of the measuring points distributed evenly over the entire area of the wafer surface defined in the inner side with respect to said width of Edge Exclusion from the outer circumference. As is obvious from the test result described above, the etching by using the SC-1 solution is a technique of high productivity and controllability for making the thin film, which is able to suppress a variation in respective values within the batch and/or the wafer plane to be small in spite of the large amount of etching. In this point of view, this solution is overwhelmingly advantageous over the CMP that has been typically practiced for making the bonded wafer thinner in the prior art. To give an example, the test that we had conducted by using the CMP, the prior art method, under the condition of the polishing pressure of 160 gf/cm2, the polishing platen revolution speed of 50 rpm, the polishing head revolution speed of 50 rpm, the slurry flow rate of 0.3 L (liter)/min and the polishing time of three minutes by the CMP indicated such high values as the resultant active layer in-plane average film thickness of 1103 Å and the resultant active layer in-plane Max-Min film thickness of 326 Å. This result is teaching that it is effective that the amount of the active layer to be removed by the CMP is minimized to a range required for reducing the surface roughness and the etching method as disclosed in the present invention is primarily practiced to control the film thickness. Next, the film thickness of the active layer 10A after the etching of the bonded wafer 30 is measured. In this stage, a spectro-ellipsometer (product name: SOPRA-MOS-ES4 G) is used. Then, the data from the measurement is evaluated, in which if the data shows that the film thickness of the active layer 10A has reached the predetermined value (uniform film thickness over the entire surface area), it indicates that the SOI substrate has been successfully fabricated. Later, thus obtained SOI substrate is typically, after various kinds of measurement and evaluation, further processed in the cleaning work for finishing in order to remove any contamination or particles from the measuring device, and predetermined pieces of finished wafer are loaded to a wafer case, which is packed and shipped to a device manufacturer. If the cleaning fluid having an etching effect is used in the cleaning work, it is required to keep controlling the active layer film thickness before the respective measurements and evaluations by taking the amount of active layer to be removed in this final cleaning work into account. Further, for such a wafer that has been determined whose film thickness in the active layer 10A has not yet reached said predetermined value, the SC-1 etching and the film thickness measurement is repeatedly performed until the predetermined value of the film thickness of the active layer 10A is finally achieved. Since in this way, the surface of the active layer 10A is etched by using the SC-1 cleaning fluid after the active layer 10A having been formed by cleaving off a portion of the active layer wafer 10, it becomes possible for the active layer 10A after the cleavage to be formed into such one of uniform film thickness and of reduced surface roughness over its entire surface area. In addition, the process for reducing the surface roughness in these stages can be simplified and thus the processing cost associated therewith can be reduced. Besides, the etching performed herein is the wet etching by using the SC-1 cleaning fluid. This allows the etching in batch processing to be applicable, in which a large number of wafers can be cleaned all at once by using the above-described cleaning bath, and thus the process time to be shorter and accordingly the throughput to be higher. Further advantageously, since the manufacturing method of the bonded substrate no more involves the heat treatment, there would be almost no fear that the metal contamination is induced in the active layer 10A. Further, since the thickness of the active layer 10A is measured after the etching, and then based on the measurement data, the subsequent etching amount of the active layer 10A is determined, therefore it is ensured that the thickness of the active layer 10A can be made uniform across the entire surface area thereof. Further, since the SC-1 cleaning fluid is employed as the solution having the etching effect, the existing cleaning technology for the SC-1, as it is, can be used so as to provide an easy control to obtain a desired etching amount. A second embodiment of the present invention will now be described with reference to FIG. 2. FIG. 2 is a flow chart showing a manufacturing method of a bonded substrate (SOI substrate) according to the second embodiment. In the second embodiment, following to the same procedure as in the first embodiment, the process begins with the hydrogen ion implantation to the active layer wafer, then goes through the bonding of the active layer wafer with the support substrate wafer, the cleavage heat treatment for the bubble formation in the bonded wafer, the cleaving of the active layer wafer at its portion of the ion-implanted region, and the bonding heat treatment for enhancing the bonding strength of the bonded wafer, and finally provides the etching of the surface of the active layer by a predetermined amount by using the SC-1 cleaning fluid. This embodiment is specific in that subsequently the CMP process, the oxidation and the oxide film removal are sequentially applied to the surface of the active layer. In this case, the surface roughness of the active layer immediately after the cleaving is 6.17 nm (Rms). The etching by the SC-1 cleaning fluid described above is carried out in the same fluid composition as in the first embodiment for 135 minutes with the amount to be removed from the cleavage surface of the active layer of 166.2 nm. The amount to be polished and removed from the active layer in the subsequent CMP is 17.8 nm. The roughness of the active layer surface is 3.21 nm (Rms). The condition for carrying out the CPM process is defined by the polishing pressure of 160 gf cm2, the polishing platen revolution speed of 50 rpm, the polishing head revolution speed of 50 rpm (revolution in the same direction as the platen), the slurry flow rate of 0.3 liter/min, and the polishing time of one minute. The condition for the subsequent oxidation is defined such that the oxidation of the bonded wafer is carried out in the atmosphere of dry O2 at 1150° C. for three hours. Further, in the step for removing the oxide film on its surface (dipping in the HF solution), the amount to be removed is 192.4 nm and the roughness of the active layer surface is to be 5.09 nm (Rms). As described above, in the second embodiment, the roughness can be reduced on the cleavage surface of the active layer by applying the SC-1 etching to the cleavage surface of the active layer. Thus, in this embodiment, since after having been etched by using the SC-1 cleaning fluid, the bonded wafer is subject to the respective steps of the CMP, the oxidation and the oxide film removing processes sequentially, the uniformity in the film thickness across the entire surface area of the active layer after the cleavage can be improved. Further, the roughness of the surface of the active layer can be reduced. Other parts of the configuration, operation and effect of the second embodiment are within a presumable range from the first embodiment, and any detailed explanation is herein omitted. A third embodiment of the present invention will now be described. FIG. 3 is a flow chart showing a manufacturing method of a bonded substrate (SOI substrate) according to the third embodiment of the present invention. In this embodiment, following to the same procedure as in the second embodiment, the process begins with the hydrogen ion implantation into the active layer wafer, then goes through the bonding of the active layer wafer with the support substrate wafer, the heat treatment for the bubble formation in the bonded wafer, the cleaving of the active layer wafer at its portion of the ion-implanted region, and the bonding heat treatment for enhancing the bonding strength of the bonded wafer, and finally provides the etching of the surface of the active layer by using the SC-1 cleaning fluid. This embodiment is specific in that subsequently the oxidation and the oxide film removal are sequentially applied to the surface of the active layer. In this case, the surface roughness of the active layer immediately after the cleavage is 6.32 nm (Rms). The etching by the SC-1 cleaning fluid described above is carried out in the same fluid composition as in the first embodiment for 135 minutes with the amount to be removed from the cleavage surface of the active layer of 166.5 nm. The surface roughness of the active layer is 5.09 nm (Rms). The condition for the subsequent oxidation is defined such that the oxidation of the bonded wafer is carried out in the atmosphere of dry O2 at 1150° C. for three hours. Further, in the step for removing the oxide film on its surface (dipping in the HF solution), the amount of the surface oxide film to be removed is to be 195.7 nm and the roughness of the active layer surface is to be 2.07 nm (Rms). As a result from the above-described procedure, the roughness of the cleavage surface of the active layer has been successfully reduced by applying the SC-1 etching to the cleavage surface of the active layer and providing a sacrificial oxidation onto the cleavage surface side of the active layer. That is, the combination of the sacrificial oxidation with the SC-1 etching enables the surface roughness of the active layer to be reduced without the need for carrying out the CMP. FIG. 4 is a flow chart showing a manufacturing method of a bonded substrate (SOI substrate) according to a fourth embodiment of the present invention. In this embodiment, following to the same procedure as in the first embodiment, the process begins with the hydrogen ion implantation into the active layer wafer, then goes through the bonding of the active layer wafer with the support substrate wafer, the heat treatment for the bubble formation in the bonded wafer, the bonding heat treatment for enhancing the bonding strength of the bonded wafer (those heat treatments are carried out serially), and the cleaving of the active layer wafer at its portion of the ion-implanted region, and finally provides the hydrogen annealing of the surface of the active layer. This embodiment is specific in that subsequently the CMP process and further the SC-1 etching are performed on the surface of the active layer. In this case, the surface roughness of the active layer immediately after the cleavage is 6.17 nm (Rms). The hydrogen annealing treatment is applied to the active layer at 1135° C. for one minute. The amount of the active layer to be removed by the hydrogen annealing is 6.8 nm. The amount of the active layer to be polished and removed in the subsequent CMP process is 41.9 nm. The surface roughness of the active layer in this stage is 0.21 nm (Rms). Further, the condition for carrying out the CPM process is defined by the polishing pressure of 160 gf/cm2, the polishing platen revolution speed of 50 rpm, the polishing head revolution speed of 50 rpm (revolution in the same direction as the platen), the slurry flow rate of 0.3 liter/min and the polishing time of one minute. The SC-1 etching described above is carried in the same condition as in the first embodiment for 47 minutes with the amount of the active layer to be removed of 55.8 nm. The surface roughness of the active layer is 1.73 nm (Rms). As described above, in the illustrated embodiment, the SC-1 etching is applied to the active layer after the surface roughness of the active layer in its cleavage surface having been improved by the short time processing of the hydrogen annealing and the CMP. Although there has been disadvantageously a fear in the CMP that the mechanical force exerts influence on the sites of micro void existing in the bonding interface of the bonded wafer to thereby induce the peeling-off of the active layer, this peeling-off can be avoided by the method of the present invention, in which the thinning of the active layer in the region proximal to the bonding interface is provided by the SC-1 etching. FIG. 5 is a flow chart showing a manufacturing method of a bonded substrate (SOI substrate) according to a fifth embodiment of the present invention. In this embodiment, following to the same procedure as in the first embodiment, the process begins with the hydrogen ion implantation into the active layer wafer, then goes through the bonding of the active layer wafer with the support substrate wafer, the heat treatment for the bubble formation in the bonded wafer and the bonding heat treatment for enhancing the bonding strength of the bonded wafer (those heat treatments may be carried out serially or separately), and the cleaving of the active layer wafer at its portion of the ion-implanted region, and finally applies the SC-1 etching to the surface of the active layer. This embodiment is specific in that subsequently the CMP process and additionally the second SC-1 etching are applied to the surface of the active layer, and then the oxidation of the active layer and the oxide film removal are performed. In this case, the surface roughness of the active layer immediately after the cleavage is 6.37 nm (Rms). The above-described SC-1 etching process is carried out for 135 minute. The amount of the active layer to be removed is 166.8 nm. The amount of the active layer to be polished and removed in the subsequent CMP process is 27.3 nm. Further, the condition for carrying out the CPM process is defined by the polishing pressure of 160 gf/cm2, the polishing platen revolution speed of 50 rpm, the polishing head revolution speed of 50 rpm (revolution in the same direction as the platen), the slurry flow rate of 0.3 liter/min and the polishing time of 1.5 minutes. The SC-1 etching described above is carried in the same condition as in the first embodiment for 47 minutes with the amount of the active layer to be removed of 55.8 nm. The surface roughness of the active layer is 1.73 nm (Rms). The condition of the subsequent oxidation process is defined such that the oxidation is carried out on the bonded wafer in the atmosphere of dry O2 at 1150° C. for three hours. Further, in the process for removing the surface oxide film thereof (dipping in the HF solution), the amount of the active layer to be removed is 135.4 nm and the surface roughness of the active layer is 1.00 nm (Rms). As described above, in the illustrated embodiment, the roughness of the cleavage surface of the active layer has been successfully reduced by applying the SC-1 etching thereto. It is to be noted that the timing to apply the SC-1 etching is not limited to that after the active layer having been thinned. There will now be presented a report on the result from the actual examination through comparison between the method by the present invention and the prior art method directed on the uniformity in film thickness and the surface roughness of the active layer after the surface roughness reducing process having been applied to the active layer after the cleavage. In Table 1, the SC-1 etching was conducted in accordance with the description provided with reference to the first embodiment. Further, the CMP and the oxide film removal were conducted in accordance with the description provided with reference to the second embodiment. TABLE 1 Evaluation of film thickness uniformity and surface roughness Treatment to the Film active layer surface thickness Surface after cleavage uniformity roughness Test example 1 SC-1 ⊚ — (depending significantly on the condition before treatment) Test example 2 SC-1→CMP→Oxide ⊚ ⊚ film removal (<300 nm) Test example 3 SC-1→CMP→SC-1 ⊚ ⊚ Test example 4 Oxide film removal→ ⊚ ⊚ CMP→SC-1 Test example 5 CMP→SC-1 ◯ ⊚ Comparative CMP→Hydrogen ◯ ⊚ example 1 annealing Comparative CMP → Oxide film ◯ ⊚ example 2 removal(>300 nm) Comparative Oxide film removal→ ◯ Δ example 3 Hydrogen annealing Comparative Hydrogen annealing ◯ Δ example 4 Explanatory note: ⊚ denotes “Excellent”, ◯ “Good” and Δ “Not bad” in evaluation, respectively Figures in ( ) denote the film thickness of the silicon oxide film (sacrificial oxide film). As is obvious from Table 1, it has been proved that the method of the present invention (Test example 1 to 5) can provide better results in both of the uniformity in film thickness and the surface roughness over the prior art method (Comparative example 1 to 4). According to the bonded substrate as defined in the first invention and a manufacturing method of a bonded substrate as defined in the second invention, since the surface of the active layer that has been formed by the cleavage of the active layer wafer is etched only by the thickness of 1 nm to 1 μm by using the solution having the etching effect so as to achieve the final thickness of the active layer equal to or less than 200 nm, therefore the active layer having the uniform thickness and the lower surface roughness over the entire surface area can be obtained, and the thinning process on the active layer after the cleavage can be simplified as well. As a result, the cost for this thinning process can be reduced. Further, since this method uses the wet etching with the etching liquid, it is allowed to employ the batch processing in which a plurality of wafers can be processed all at once. Consequently, this can shorten the process time and increase the throughput as well. Furthermore, differently from the conventional method employing the hydrogen annealing and/or the oxide film removal processes, the method of the present invention uses the wet etching in conjunction with no heat treatment, and so there could be almost no fear that any metal contamination is induced in the active layer. Especially, according to a manufacturing method of a bonded substrate as defined in the eighth invention, since the thickness of the active layer is measured after the etching, and based on the measurement data, the etching amount for the subsequent etching process is determined within a range of 1 nm to 1 μm, therefore the thickness of the active layer is ensured to be uniform over the entire surface area. Furthermore, according to a manufacturing method of a bonded substrate as defined in the fourteenth invention, the uniformity in film thickness of the active layer after the cleavage can be enhanced over the entire surface area, and the roughness of the surface of the active layer can be also further reduced. ## Claims 1. A manufacturing method of a bonded substrate having a final active layer thickness of 200 nm or less, comprising: a) providing a first silicon wafer as an active layer wafer and a second silicon wafer as a support substrate; b) forming silicon oxide film on a surface of said active layer wafer; c) implanting hydrogen ions into the active layer wafer to form a hydrogen ion implanted layer under the silicon oxide film; d) bonding the active layer wafer and the support substrate such that the silicon oxide film is interposed between the active layer wafer and the support substrate and forms a bonded substrate having an embedded silicon oxide film; e) heat treating the bonded substrate to form regions of high density hydrogen bubbles and cleaving away a portion of the active layer wafer at said regions whereby the non-cleaved active layer wafer of the bonded substrate becomes the active layer of the bonded substrate; f) heat treating the cleaved bonded substrate to enhance bonding strength between the active layer wafer and the support substrate; and g) etching a surface of the active layer of the bonded substrate to control the thickness of said active layer, said etching being carried out using a solution having an etching effect so as to etch in a range of 1nm to 1μm, said solution being a solution having pH 9 or higher and containing alkaline chemicals and an oxidizer. 2. A manufacturing method of a bonded substrate in accordance with claim 1, in which an etching rate in said etching is not greater than 100 nm/min. 3. A manufacturing method of a bonded substrate in accordance with claim 1, in which after said etching, a thickness of said active layer is measured and based on said obtained measurement data, said etching is repeated until said thickness of the active layer across its entire area comes near to a predetermined thickness of the final active layer. 4. A manufacturing method of a bonded substrate in accordance with claim 2, in which after said etching, a thickness of said active layer is measured and based on said obtained measurement data, said etching is repeated until said thickness of the active layer across its entire area comes near to a predetermined thickness of the final active layer. 5. A manufacturing method of a bonded substrate in accordance with claim 1, in which one of following steps is performed on said active layer of said bonded substrate before said etching, said steps including; (1)a step of chemical mechanical polishing taking advantage of a chemical effect and a mechanical effect at the same time; (2) a step of hydrogen treating for performing a heat treatment in a reducing atmosphere containing hydrogen; and (3) a step of forming a silicon oxide film over said active layer and then removing said silicon oxide film along with a damaged portion of said active layer, which has been created in said cleaving. 6. A manufacturing method of a bonded substrate in accordance with claim 1, in which one of following steps is performed on said active layer surface of said bonded substrate after said etching, said steps including: (1) a step of chemical mechanical polishing taking advantage of a chemical effect and a mechanical effect at the same time; (2) a step of hydrogen treating for performing a heat treatment in a reducing atmosphere containing hydrogen; and (3) a step of forming a silicon oxide film over said active layer and then removing said silicon oxide film along with a damaged portion of said active layer, which has been created in said cleaving.
s3://data.kl3m.ai/documents/ecfr/2024-03-22/25/11.315.json	text/markdown	§ 11.315 Sentencing. ( a ) Any person who has been convicted in a Court of Indian Offenses of a criminal offense under the regulations of this part may be sentenced to one or a combination of the following penalties: ( 1 ) Imprisonment for a period up to the maximum permitted by the section defining the offense, but in no case for longer than one year; and ( 2 ) A fine in an amount up to the maximum permitted by the section defining the offense, but in no case greater than $5,000. ( b ) In addition to or in lieu of the penalties provided in paragraph (a) of this section, the court may require a convicted offender who has inflicted injury upon the person or property of another to make restitution or compensate the injured person by means of the surrender of property, payment of money damages, or the performance of any other act for the benefit of the injured party. ( c ) If, solely because of indigence, a convicted offender is unable to pay forthwith a money fine assessed under any applicable section, the court shall allow him or her a reasonable period of time to pay the entire sum or allow him or her to make reasonable installment payments to the clerk of the court at specified intervals until the entire sum is paid. If the offender defaults on such payments the court may find him or her in contempt of court and imprison him or her accordingly. [58 FR 54411, Oct. 21, 1993, as amended at 73 FR 39861, July 11, 2008]
s3://data.kl3m.ai/documents/eu_oj/publications.europa.eu/resource/celex/52013XC0628%2809%29.json	text/markdown	"# C_2013186EN.01002401.xml\n\n\| 28.6.2013 \| EN \| Official Journal of the European Union \| C 186/24 (...TRUNCATED)
s3://data.kl3m.ai/documents/edgar/0000950149/0000950149-01-500389/1.json	text/plain	"\n\n<PAGE> 1\n\n--------------------------------------------------------------------------------\(...TRUNCATED)
"s3://data.kl3m.ai/documents/recap_docs/1940/07/02/untitled_texas_attorney_general_opinion_933.pdf.j(...TRUNCATED)	text/markdown	"OFFICE OF THE ATrORNEY GENERAL OF m AUSTIN\n\nEoEorable E. k!. County fud:tor Shermn, Tern.8 Dear S(...TRUNCATED)

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KL3M Data Sample 004 (Shuffled)

This dataset contains a shuffled sample of 10 million examples from the KL3M Data Project, an initiative by the ALEA Institute providing copyright-clean training resources for large language models across legal, regulatory, and government domains.

The KL3M Data Project encompasses approximately 28 TB of compressed documents from authoritative sources including court opinions, government regulatory materials, corporate filings, intellectual property records, legislative texts, and general government publications.

Dataset Structure

Features:
- identifier: Unique identifier for each example
- mime_type: MIME type of the source content
- text: The text content
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- train: 10,000,000 examples

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Dataset size: ~460 GB (uncompressed)
Download size: ~182 GB (compressed)
Format: Parquet files (898 files total)

About KL3M

KL3M is the first Fairly Trained large language model family, designed for legal and ethical AI applications. All resources are released under permissive CC-BY licensing with transparent provenance information.

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